Prosecution Insights
Last updated: July 17, 2026
Application No. 17/211,028

METHOD TO CONNECT POWER TERMINAL TO SUBSTRATE WITHIN SEMICONDUCTOR PACKAGE

Non-Final OA §103
Filed
Mar 24, 2021
Examiner
NGUYEN, DONGHAI D
Art Unit
3729
Tech Center
3700 — Mechanical Engineering & Manufacturing
Assignee
Littelfuse Inc.
OA Round
9 (Non-Final)
75%
Grant Probability
Favorable
9-10
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 75% — above average
75%
Career Allowance Rate
671 granted / 890 resolved
+5.4% vs TC avg
Strong +29% interview lift
Without
With
+29.1%
Interview Lift
resolved cases with interview
Typical timeline
3y 0m
Avg Prosecution
17 currently pending
Career history
909
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
75.4%
+35.4% vs TC avg
§102
15.8%
-24.2% vs TC avg
§112
6.6%
-33.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 890 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on April 21, 2026 has been entered. Claim Rejections - 35 USC § 103 The text of those sections of Title 35, U.S. Code not included in this action can be found in a prior Office action. Claims 1-13 and 21-23are rejected under 35 U.S.C. 103 as being unpatentable over EP2571053 to Guillon et al in view of U.S. 11,292,085 to Kabetliz et al and vice versa. Regarding claim 1, Guillon et al disclose a laser bonding method, comprising: removing material from a first portion (36) of a power terminal (16) to form a first cutout (42) in the first portion (36); disposing the first portion (36) over a substrate (22) of a semiconductor device (10); activating a laser device (see Col. 9, lines 39-41) to transform an interface (36) between the first portion-cutout and the substrate by melting with consecutive rapid solidification the first portion cutout and the substrate; and connecting the first portion cutout (42) of the power terminal to the substrate at the interface to create a bond between the power terminal and the substrate, wherein the material is removed from the first portion at the first cutout only above the interface (see Fig. 3), wherein each of the first portion and an adjacent second portion of the power terminal has a surface in direct contact with the substrate (see Fig. 1), wherein the first portion-cutout has a first dimension measured in a direction perpendicular to a surface of the substrate and the adjacent second portion of the power terminal has a second dimension measured in the direction perpendicular to the surface of the substrate, wherein the first dimension is less than the second dimension (see Fig. 3), and wherein the bond spans an entirety of the first cutout portion (see Abstract) except for Guillon et al do not explicitly disclose the position of the laser device and the terminal. Kabelitz et al disclose the step of positioning the laser device (118) over the first portion (112, see Fig. 6) for forming a reliable mechanical and electrical connection (see Col. 10, lines 6-13). Therefore, it would have been obvious to one having ordinary skill in the art before the effective filing date of the claimed invention to modify the invention of Guillon et al by position the laser device over the cutout portion of the terminal as taught by Kabelitz et providing a reliable mechanical and electrical connection. In an alternative, Kabelitz et al disclose all the limitations of the claimed invention (see previous Office Action, dated 02/11/2026) except for the bond spans an entirety of the first cutout portion. Guillon et al teach the bond between the terminal (16) and the substrate (12) spans an entirely of the first cutout portion (see Figs. 2-3) for improving reliability and durability connection (see Abstract). Therefore, it would have been obvious to one having ordinary skill in the art before the effective filing date of the claimed invention to modify the invention Kabelitz et al by limiting the bond between the terminal and the substrate spans an entirely of the first cutout portion as taught by Gullion et al for improving reliability and durability connection. Regarding claims 2 and 4, Kabelitz et al disclose removing material from the first portion further comprising forming a rectangular-shaped and U-shaped cutout of the first portion (see Figs. 5-7). Regarding claims 5-7, Kabelitz et al disclose removing material from the first portion further comprising forming a stairstep-shaped cutout that form a lip of the first portion (see Fig. 4). Regarding claim 8, Kabelitz et al disclose reducing the first portion until the first dimension is between 0.2 mm and 0.8 mm (see Col. 8, lines 27-40). Regarding claims 9-10, Kabelitz et al disclose the substrate comprises two conducting materials (103) comprise copper, aluminum, or sintered copper paste (see Col. 7, lines 1-9) covering an insulating material. Regarding claims 21-22, Kabelitz et al disclose the removing the material from the first portion decreases a thickness of the first portion from the second dimension to the first dimension (see Fig. 6) to facilitate the laser device (118) transforming the interface between the first portion and the substrate when positioned over the first portion and when positioned over the adjacent second portion fails to transform an interface between the adjacent second portion and the substrate (no chances are shown in Fig. 7 after the laser is activated). Regarding claims 3, and 11-13 Kabelitz et al disclose a direct copper bonding to the substrate made of insulating having metallic layers (copper bonded material from the wiring layer) attached thereon (see Col. 6, lines 48-53), and U-shaped cutout on the terminal except for another configuration of the cutout portion and material for the substrate. It would have been an obvious matter of design choice to one having ordinary skill in the art before the effective filing date of the claim invention to choose any desired material such as aluminum that formed on the substrate; to choose any desired cutout shape on the terminal such as a V-shaped cutout of the first portion; and choose any desired material as the insulating material such as aluminum oxide, aluminum nitride, silicon nitride, or other ceramic, since it has been held that to be within the general skill of a worker in the art to select a Known material on the basis of its suitability for the intended use as a matter of desired choice (in re Lishin, 125 USPQ 416) and since Applicant has not disclosed the specific cutout on the terminal such as a V-shaped cut out, solves any stated problem or is for any particular purpose and it appears the invention would perform equally well with the cutouts disclosed by Kabelitz et al. Response to Arguments Applicant’s arguments with respect to claims 1-13 and 21-23 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to DONGHAI D NGUYEN whose telephone number is (571)272-4566. The examiner can normally be reached M-F 9:00-5:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Peter Vo can be reached at 571-272-4690. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DN/ /DONGHAI D NGUYEN/June 27, 2026 Primary Examiner, Art Unit 3729
Read full office action

Prosecution Timeline

Show 18 earlier events
Aug 25, 2025
Response after Non-Final Action
Oct 01, 2025
Non-Final Rejection mailed — §103
Oct 30, 2025
Response Filed
Feb 11, 2026
Final Rejection mailed — §103
Apr 06, 2026
Response after Non-Final Action
Apr 21, 2026
Request for Continued Examination
Apr 24, 2026
Response after Non-Final Action
Jul 01, 2026
Non-Final Rejection mailed — §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

9-10
Expected OA Rounds
75%
Grant Probability
99%
With Interview (+29.1%)
3y 0m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 890 resolved cases by this examiner. Grant probability derived from career allowance rate.

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