Prosecution Insights
Last updated: April 19, 2026
Application No. 17/241,753

COMPACT, HIGH PERFORMANCE FULL ADDERS

Non-Final OA §102
Filed
Apr 27, 2021
Examiner
DUONG, HUY
Art Unit
2182
Tech Center
2100 — Computer Architecture & Software
Assignee
Texas Instruments Incorporated
OA Round
7 (Non-Final)
68%
Grant Probability
Favorable
7-8
OA Rounds
3y 0m
To Grant
91%
With Interview

Examiner Intelligence

Grants 68% — above average
68%
Career Allow Rate
100 granted / 148 resolved
+12.6% vs TC avg
Strong +23% interview lift
Without
With
+23.0%
Interview Lift
resolved cases with interview
Typical timeline
3y 0m
Avg Prosecution
37 currently pending
Career history
185
Total Applications
across all art units

Statute-Specific Performance

§101
34.2%
-5.8% vs TC avg
§103
23.5%
-16.5% vs TC avg
§102
12.3%
-27.7% vs TC avg
§112
26.9%
-13.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 148 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 01/14/2026 has been entered. Response to Amendment This Office action is responsive to amendment filed on 01/14/2026. Claims 16-17, and 47-56, and 58-61 are pending. The amendment have overcome the claims objection as set forth in previous office action. Response to Arguments In response to Applicant’s argument regarding rejection under 35 U.S.C. 102 on page 8-9, “the cited portions Mittal fail to disclose all the subject matter of amended claim 1, such as the both the first NMOS and the third PMOS that are coupled to the second NMOS.” Applicant further compare figure 1 of the application to figure 3 of Mittal and asserted that “Consider below FIG. 1 of the application as an example. The recited first PMOS may be considered directed to PMOS 136, the first NMOS directed to NMOS 138, the second NMOS directed to 140, the second PMOS directed to PMOS 134, and the third PMOS directed to PMOS 144. Therefore, comparing to Mittal's FIG. 3, Mittal only discloses one NMOS "BN," not an additional PMOS, that is coupled to NMOS "AN." While Examiner agrees that there is a different between figure 1 of the application and figure 3 of Mittal. However, applicant's argument that the reference fail to show certain features of the invention, it is noted that the features upon which applicant relies (i.e., the particular configuration of PMOS 136, NMOS 138, NMOS 140, PMOS 145, and PMOS 144 as illustrated in figure 1 of the application) are not recited in the rejected claim(s). Although the claims are interpreted in light of the specification, limitations from the specification are not read into the claims. See In re Van Geuns, 988 F.2d 1181, 26 USPQ2d 1057 (Fed. Cir. 1993). In other words, figure 1 illustrates PMOS 136, NMOS 138, NMOS 140, PMOS 145, and PMOS 144, which are directly coupled to each other, but the claim merely recite “coupled to”, and as explained in the Claim Interpretation section, “coupled to” is not necessarily be interpreted as directly coupled, but can be interpreted as indirectly coupled through intervene components. Accordingly, Mittal teaches all the subject matter of amended claim 1, including both the first NMOS and the third PMOS that are coupled to the second NMOS, see rejection below for details. Claim Interpretation Examiner interprets the phrase “coupled to” as recited in the claims as connected directly or indirectly through intervene components. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 47-56 and 59-61 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Mittal et al - US 20200144245 (hereinafter Mittal). Regarding claim 47, Mittal teaches a circuit (figure 3 illustrates a circuit 300) comprising: a first inverter having an input and an output (figure 3 circuit 300 comprises circuit 302 having an inverter for A to AN [i.e., a first inverter having an input and an output]); a first pass gate having a first input, a second input, a third input and an output (figure 3 circuit 304 comprises a transmission gate [i.e., a first pass gate] having AN input [i.e., a first input], B input, BN input and an output) wherein the output of the first inverter is coupled to the first input of the first pass gate (figure 3 circuit 304 AN [i.e., the output of the first inverter] coupled to the first input AN of the transmission gate); a first P-type Metal Oxide Semiconductor (PMOS) transistor having a gate, source and drain (figure 3 circuit 304 includes PMOS and NMOS stack having 4 transistors connected in series, wherein the top PMOS [i.e., a first PMOS transistor] having gate, source and drain, wherein AN is input as gate, hereinafter as AN PMOS) wherein the drain of the first PMOS transistor is coupled to the output of the first pass gate (figure 3 circuit 304 AN PMOS having drain coupled to the output of the transmission gate) and the gate of the first PMOS transistor is coupled to the output of the first inverter (figure 3 circuit 304 AN PMOS having gate coupled to AN [i.e., the output of the first inverter]); a first N-type Metal Oxide Semiconductor (NMOS) transistor having a gate, source and drain (figure 3 circuit 304 illustrates the bottom NMOS [i.e., first NMOS transistor] of PMOS and NMOS stack, wherein AN input as gate, hereinafter AN NMOS) wherein the drain of the first NMOS transistor is coupled to the drain of the first PMOS transistor and to the output of the first pass gate (figure 3 circuit 304 illustrates drain of AN NMOS and drain of AN PMOS are coupled via B PMOS and BN NMOS transistors as illustrated in the PMOS and NMOS stack and also coupled to the output of the transmission gate), and the gate of the first NMOS transistor is coupled to the output of the first inverter (figure 3 circuit 304 the gate of AN NMOS is coupled to AN [i.e., the output of the first inverter]); a second inverter having an input and an output (figure 3 circuit 304 inverter that generate AXNORB [i.e., a second inverter] having an input and an output) wherein the input of the second inverter is coupled to the drain of the first PMOS transistor, to the drain of the first NMOS transistor and to the output of the first pass gate (figure 3 circuit 304 input of the AXNORB inverter is coupled to the drain of AN PMOS [i.e., drain of the first PMOS], drain of AN NMOS [i.e., drain of the first NMOS] and output of the transmission gate [i.e., output of the first pass gate]); a second NMOS transistor having a gate, drain and source (figure circuit 304 illustrates BN NMOS [i.e., a second NMOS transistor] of the PMOS and NMOS stack) wherein the drain of the second NMOS transistor is coupled to the source of the first NMOS transistor (figure 3 circuit 304 drain of BN NMOS is coupled to the source of AN NMOS of the PMOS and NMOS stack [i.e., drain of the first NMOS]); a second PMOS transistor having a gate, source and drain (figure circuit 304 illustrates B PMOS [i.e., a second PMOS transistor] of the PMOS and NMOS stack) wherein the drain of the second PMOS transistor is coupled to the source of the first PMOS transistor (figure 3 circuit 304 drain of B PMOS is coupled to source of AN PMOS [i.e., the first PMOS]); and a third PMOS transistor having a gate, source and drain (figure 3 circuit 304 the top PMOS of the transmission gate, wherein the top PMOS receives BN for gate input, such top PMOS corresponds to a third PMOS) wherein the drain of the third PMOS transistor is coupled to the drain of the second NMOS transistor and to the source of the first NMOS transistor (figure 3 circuit 304 the drain of top PMOS of the transmission gate coupled to drain of BN NMOS [i.e., the second NMOS] and the source of AN NMOS [i.e., the first NMOS]). Regarding claim 48, Mittal teaches the circuit of claim 47 further comprising; a second pass gate having a first input, a second input, a third input and an output (figure 3 circuit 308 top transmission gate [i.e., a second pass gate] having AXORB, AXNORB, and BN as first, second, and third inputs, respectively, and an output) wherein the first input of the second pass gate is coupled to the input of the second inverter, to the drain of the first PMOS transistor and to the drain of the first NMOS transistor (figure 3 circuit 308 the AXORB input of the top transmission gate is coupled to AXORB [i.e., input of the second inverter], to the drain of AN PMOS and to the drain of AN NMOS of the PMOS and NMOS stack as illustrated in circuit 304); a third pass gate having a first input, a second input, a third input and an output (figure 3 circuit 308 bottom transmission gate [i.e., a third pass gate] having AXNORB, AXORB, and CIN as input respectively, and an output) wherein the first input of the third pass gate is coupled to the output of the second inverter (figure 3 circuit 308 AXNORB input of the bottom transmission is coupled to AXNORB [i.e., the output of the second inverter]); and a third inverter having an input and an output wherein the input of the third inverter is coupled to the output of the second pass gate and to the output of the third pass gate (figure 3 circuit 308, inverter that generates CO [i.e., a third inverter] having input coupled to the top and bottom transmission gates). Regarding claim 49, Mittal teaches the circuit of claim 48 further comprising; a fourth inverter having an input and an output (figure 3 circuit 302 illustrates a ci inverter that converts to CIN [i.e., a fourth inverter having an input and an output]); a fourth pass gate having a first input, a second input, a third input and an output (figure 3 circuit 306 illustrates a transmission gate having CIN, AXORB, AXNORB as 3 inputs and an output) wherein the first input of the fourth pass gate is coupled to the output of the fourth inverter (figure 3 circuit 306 CIN input of the transmission gate [i.e., the first input of the fourth pass gate] is coupled to CIN [i.e., output of the fourth inverter]), the second input of the fourth pass gate is coupled to the drain of the first PMOS transistor (figure 3 circuit 306 AXORB input of the transmission gate [i.e., the second input of the fourth pass gate] is coupled to drain of AN PMOS of the PMOS and NMOS stack in circuit 304 [i.e., the first PMOS transistor] via the AXORB signal), the third input of the fourth pass gate is coupled to the output of the second inverter (figure 3 circuit 306 AXNORB input of the transmission gate [i.e., the third input of the fourth pass gate] is coupled to AXNORB, wherein AXNORB as illustrated in circuit 304 is output of the inverter [i.e., output of the second inverter]); a fifth pass gate having a first input, a second input, a third input and an output (figure 3 circuit 306 illustrates PMOS and NMOS stack in series having at least 3 inputs and an output, wherein transistor acts like a switch that allows signal to pass depends on the input of the gate. Thus, such PMOS AND NMOS stack in series corresponds to a fifth pass gate) wherein the first input of the fifth pass gate is coupled to the output of the first inverter (figure 3 circuit 306 the PMOS and NMOS stack includes an NMOS having an AXORB input [i.e., the first input of the fifth pass gate] coupled to AXORB, which is also coupled to AN [i.e., the output of the first inverter] as illustrated in figure 3 circuit 304), second input of the fifth pass gate is coupled to the output of the second inverter (figure 3 circuit 306 the PMOS and NMOS stack includes a PMOS having an AXNORB input [i.e., the second input of the fifth pass gate] is coupled to AXNORB [i.e., output of the second inverter]) and the third input of the fifth pass gate is coupled to the drain of the first PMOS transistor (figure 3 circuit 306 the PMOS and NMOS stack includes an NMOS having CIN input [i.e., the third input of the fifth pass gate] is coupled to the AXORB, which is coupled to the drain of the AN PMOS [i.e., the first PMOS transistor] as illustrated in circuit 304); and a fifth inverter having an input and an output wherein the input of the fifth inverter is coupled to the output of the fourth pass gate and to the output of the fifth pass gate (figure 3 circuit 306 the inverter that generate SUM [i.e., a fifth inverter having an input and an output], wherein the input of SUM inverter is coupled to output of transmission gate [i.e., output of fourth pass gate] and the output of PMOS and NMOS stack [i.e., output of the fifth pass gate]). Claim 50 recites an apparatus having similar limitation as the apparatus of claims 47-49. Thus, it is rejected for the same reasons. Furthermore, Mittal also teaches an adder (figure 3 [0021] describes a full adder circuit) Regarding claim 51, Mittal teaches the adder of claim 50, wherein the first inverter comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the gates of the NMOS and PMOS transistors are coupled the input of the first inverter, and drains of the NMOS and PMOS transistors are coupled the output of the first inverter (figure 3 circuit 302 illustrates AN inverter that invert A to AN having PMOS AND NMOS, wherein the gates of NMOS AND PMOS transistors are coupled to the input and drains are coupled to the output of the AN inverter). Regarding claim 52, Mittal teaches the adder of claim 50, wherein the second inverter comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the gates of the NMOS and PMOS transistors are coupled the input of the second inverter, and drains of the NMOS and PMOS transistors are coupled the output of the second inverter (figure 3 circuit 304 illustrates inverter that generates AXNORB having PMOS AND NMOS, wherein the gates of NMOS AND PMOS transistors are coupled to the input and drains are coupled to the output of the AXNORB inverter). Regarding claim 53, Mittal teaches the adder of claim 50, wherein the third inverter comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the gates of the NMOS and PMOS transistors are coupled the input of the third inverter, and drains of the NMOS and PMOS transistors are coupled the output of the third inverter (figure 3 circuit 308 illustrates inverter that generates CO having PMOS AND NMOS, wherein the gates of NMOS AND PMOS transistors are coupled to the input and drains are coupled to the output of the CO inverter). Regarding claim 54, Mittal teaches the adder of claim 50, wherein the fourth inverter comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the gates of the NMOS and PMOS transistors are coupled the input of the fourth inverter, and drains of the NMOS and PMOS transistors are coupled the output of the fourth inverter (figure 3 circuit 302 illustrates inverter that generates CIN having PMOS AND NMOS, wherein the gates of NMOS AND PMOS transistors are coupled to the input and drains are coupled to the output of the CIN inverter). Regarding claim 55, Mittal teaches the adder of claim 50, wherein the fifth inverter comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the gates of the NMOS and PMOS transistors are coupled the input of the fifth inverter, and drains of the NMOS and PMOS transistors are coupled the output of the fifth inverter (figure 3 circuit 306 illustrates inverter that generates SUM having PMOS AND NMOS, wherein the gates of NMOS AND PMOS transistors are coupled to the input and drains are coupled to the output of the SUM inverter). Regarding claim 56, Mittal teaches the adder of claim 50, wherein the first pass gate comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the drains of the NMOS and PMOS transistors are coupled to each other, and sources of the NMOS and PMOS transistors are coupled to each other (figure 3 circuit 304 illustrates transmission gate having input AN, B, and BN [i.e., the first pass gate] having a PMOS transistor and a NMOS transistor, wherein the drains are coupled to each other and the sources are coupled to each other). Regarding claim 58, Mittal teaches the adder of claim 50, wherein the second pass gate comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the drains of the NMOS and PMOS transistors are coupled to each other, and sources of the NMOS and PMOS transistors are coupled to each other (figure 3 circuit 308 illustrates top transmission gate having input BN, AXORB, AXNORB [i.e., the second pass gate] having a PMOS transistor and a NMOS transistor, wherein the drains are coupled to each other and the sources are coupled to each other). Regarding claim 59, Mittal teaches the adder of claim 50, wherein the third pass gate comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the drains of the NMOS and PMOS transistors are coupled to each other, and sources of the NMOS and PMOS transistors are coupled to each other (figure 3 circuit 308 illustrates bottom transmission gate having input CIN, AXORB, AXNORB [i.e., the third pass gate] having a PMOS transistor and a NMOS transistor, wherein the drains are coupled to each other and the sources are coupled to each other). Regarding claim 60, Mittal teaches the adder of claim 50, wherein the fourth pass gate comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the drains of the NMOS and PMOS transistors are coupled to each other, and sources of the NMOS and PMOS transistors are coupled to each other (figure 3 circuit 306 illustrates a transmission gate having input CIN, AXORB, AXNORB [i.e., the fourth pass gate] having a PMOS transistor and a NMOS transistor, wherein the drains are coupled to each other and the sources are coupled to each other. Regarding claim 61, Mittal teaches the adder of claim 50, wherein the fifth pass gate comprises a PMOS transistor having a gate, drain and a source, and an NMOS transistor having a gate, drain and a source, wherein the drains of the NMOS and PMOS transistors are coupled to each other, and sources of the NMOS and PMOS transistors are coupled to each other (figure 3 circuit 308 illustrates a PMOS and NMOS stack [i.e., the fifth pass gate] having an AXNORB PMOS and an AXORB NMOS transistor, wherein the drains of the PMOS and NMOS coupled to each other and the sources of the PMOS and NMOS are coupled to each other). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to HUY DUONG whose telephone number is (571)272-2764. The examiner can normally be reached Mon-Friday 7:30-5:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Andrew Caldwell can be reached on (571) 272-3702. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /HUY DUONG/Examiner, Art Unit 2183 (571)272-2764 /ANDREW CALDWELL/Supervisory Patent Examiner, Art Unit 2182
Read full office action

Prosecution Timeline

Apr 27, 2021
Application Filed
Jun 15, 2023
Non-Final Rejection — §102
Nov 22, 2023
Response Filed
Mar 06, 2024
Final Rejection — §102
Jun 12, 2024
Request for Continued Examination
Jun 20, 2024
Response after Non-Final Action
Sep 10, 2024
Non-Final Rejection — §102
Dec 11, 2024
Response Filed
Jan 03, 2025
Final Rejection — §102
Apr 09, 2025
Request for Continued Examination
Apr 14, 2025
Response after Non-Final Action
Apr 22, 2025
Non-Final Rejection — §102
Jul 25, 2025
Response Filed
Aug 12, 2025
Final Rejection — §102
Jan 14, 2026
Request for Continued Examination
Jan 25, 2026
Response after Non-Final Action
Jan 28, 2026
Non-Final Rejection — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

7-8
Expected OA Rounds
68%
Grant Probability
91%
With Interview (+23.0%)
3y 0m
Median Time to Grant
High
PTA Risk
Based on 148 resolved cases by this examiner. Grant probability derived from career allow rate.

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