Prosecution Insights
Last updated: April 19, 2026
Application No. 17/657,247

ASSEMBLIES USED FOR EMBEDDING INTEGRATED CIRCUIT ASSEMBLIES, AND THEIR USES AND METHOD OF FABRICATION THEREOF

Final Rejection §103
Filed
Mar 30, 2022
Examiner
VERDES, RICKY
Art Unit
2898
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Terecircuits Corporation
OA Round
2 (Final)
78%
Grant Probability
Favorable
3-4
OA Rounds
3y 10m
To Grant
99%
With Interview

Examiner Intelligence

Grants 78% — above average
78%
Career Allow Rate
18 granted / 23 resolved
+10.3% vs TC avg
Strong +31% interview lift
Without
With
+31.3%
Interview Lift
resolved cases with interview
Typical timeline
3y 10m
Avg Prosecution
16 currently pending
Career history
39
Total Applications
across all art units

Statute-Specific Performance

§103
49.2%
+9.2% vs TC avg
§102
32.3%
-7.7% vs TC avg
§112
16.9%
-23.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 23 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-3, 13-14, 16, 18, 21 and 25 are rejected under 35 U.S.C. 103 as being unpatentable over Wang et al., hereinafter Wang (US 2018/0130760 A1) and in further view of Vanfleteren et al, hereinafter Vanfleteren (US 7,759,167 B2). Re claim 1: Wang teaches (1A-1D). An assembly used for integrated circuit manufacturing, comprising: a substrate (CP); a release layer (DB) disposed over the substrate (CP); a plurality of components (110) disposed over the release layer (DB), wherein the plurality of components (110) each comprise an active face (SA) in contact with the release layer (DB); and an embedding material layer (120/130 hereinafter EML) encapsulating (as shown in fig. 1D) the plurality of components (110). Wang is silent to teach wherein the release layer comprises a light activated digital release material and a thickness of at most about 5 um; and wherein a spacing between adjacent components of the plurality of components is at most about 20 um; Vanfleteren teaches (fig.1 and 7-8) wherein the release layer (PI) comprises a light activated digital release material (photodefinable polyimide, col.11 lines 58-64) and a thickness of at most about 5 um (col.7 lines 37-38); and wherein a spacing (5) between adjacent components (4) of the plurality of components (4) is at most about 20 um (fig.7 shows the top PI layer being 20 um therefore the spacing 5 between components 4 is much smaller than 20 um); It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to apply the release layer material and spacing between components as taught by Vanfleteren in the release layer and device of Wang in order to have the predictable result of improving flatness of the package for better stacking capabilities in chip packages (col 11 line 62 – col 12 line 22 of Vanfleteren). Re claim 2: Wang teaches the assembly of Claim 1, wherein each of the active faces (SA) of the components (110) do not substantially contact (as shown in 1D) the embedding material (EML). Re claim 3: Wang teaches the assembly of Claim 1, wherein the embedding material layer (EML) comprises a plurality of embedding material sublayers (EML consists of 130 and 120) wherein the plurality of embedding material sublayers comprise a first embedding material sublayer (120) and a second embedding material sublayer (130). Re claim 13: Wang teaches the assembly of Claim 1, wherein the substrate (CP) comprises pores (the substrate can be composed of ceramic which is commonly known to be porous, p.17). Re claim 14: Wang teaches (fig. 1A-1D and p.17-23) A process of fabricating (p.17-23) the assembly of Claim 1, comprising: depositing (p.17) the plurality of components (110) onto the release layer (DB), wherein the release layer (DB) is disposed over the substrate (CP); and encasing (p.19) the plurality of components (110) with the embedding material layer (EML). Re claim 16: Wang in view of Vanfleteren teaches a process (fig 1D-1F, p.25-26 of Wang) of integrating an assembly into an integrated circuit, comprising: separating (peeling process mentioned in p.25 of Wang) the release layer (DB of Wang would be the same material as PI of Vanfleteren as as mentioned in claim 1) from the plurality of components (110 of Wang) encapsulated (as shown in fig,1D of Wang) by the embedding material layer (120 and 130 hereinafter EML of Wang) of the assembly of Claim 1 to form a laminate (120/130/110 as shown in 1E of Wang); wherein separating (col.10, lines 43-56 of Vanfleteren) comprises irradiating and heating the release layer (DB of Wang) ; and depositing an interconnect material (140 of Wang) over each of the exposed surfaces (SA of Wang) of the plurality of components (110 of Wang) to form a wired laminate (110,120,130 and 140 together hereinafter WL of Wang). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to apply the removal method of the release layer as taught by Vanfleteren in the device of Wang in order to have the predictable result of improving the spacing/hole quality and reducing debris caused during removal of the release layer. (col.10 lines 43-56 of Vanfleteren) Re claim 18: Wang teaches (1F) A laminate (110/120/130) for integrating into a circuit device, comprising: a plurality of components (110) each comprising a plurality of encapsulated surfaces (SB and SC, hereinafter ES, is encapsulated by 120 and 130) and an exposed surface (SA); and an embedding material (120 and 130, hereinafter EML) encapsulating the plurality of encapsulated surfaces (ES) of the plurality of components (110) wherein each of the exposed surfaces (SA) comprises a pad (although not mentioned, interconnect layer 140 is placed on SA and there seems to be pads which are commonly known to be used to connect an interconnect layer as shown in figure below). ; wherein each of the exposed surfaces (SA) are substantially coplanar with each other (as shown in fig.1D) Wang is silent to explicitly teach wherein each of the exposed surfaces (SA) are substantially coplanar with each other (as shown in fig.1D) and comprise a discontinuity of at most about 1 um (fig.7 shows the entire PI layer is 20 um so it can be inferred the exposed surface (tops of 4) are around 1 um). Vanfleteren teaches (fig.1 and 7-8) wherein each of the exposed surfaces (top of 4) are substantially coplanar with each other (as shown in fig.1) and comprise a discontinuity (as shown in fig.1) of at most about 1 um (. Re claim 21: Wang teaches the laminate of Claim 18, further comprising interconnect materials (140) disposed over each of the exposed surfaces (SA). PNG media_image1.png 218 928 media_image1.png Greyscale Re claim 25: Wang teaches the assembly of Claim 3, wherein the first embedding material sublayer (120 of EML) comprises a thermal conductivity comparable to silicon (120 can be Silicone par.19), and wherein the second embedding material sublayer comprises a CTE comparable to silicon (130 can be polysiloxane, par.22). Claim 26 is rejected under 35 U.S.C. 103 as being unpatentable over Wang et al., hereinafter Wang (US 2018/0130760 A1) in view of Vanfleteren et al, hereinafter Vanfleteren (US 7,759,167 B2) and in further view of Hohlfeld et al, hereinafter Hohlfeld (US 2014/0197551 A1). Re claim 26: Wang teaches the assembly of Claim 1, Wang and Vanfleteren are silent to teach wherein the embedding material layer does not comprise a polymer material. Hohlfeld teaches the embedding material layer (12) does not comprise a polymer material (can be ceramic or glass, par.14) It would have been obvious to one of ordinary skill in the art to have the embedding material layer of Wang comprise of ceramic or glass as taught by Hohlfeld instead of polymers since ceramic and glass is commonly known to be used as an encapsulant to provide better thermal stability, electrical insulation and mechanical resistance compared to polymers and ultimately improve the performance of the semiconductor device. Claims 11-12 are rejected under 35 U.S.C. 103 as being unpatentable over Wang and Vanfleteren as applied to claim 1 above, and further in view of Meitl (US 2018/0323178 A1). Re claim 11: Wang in view of Vanfleteren is silent as to explicitly teaching the assembly of Claim 1, wherein the release layer comprises an undercut region positioned between the release layer and at least one component of the plurality of components. Wang in view of Meitl teaches (fig.2H of Meitl) the assembly of Claim 1, wherein the release layer (DB of Wang) comprises an undercut region (gaps 32 of Meitl would be under DB of Wang) positioned between the release layer (DB of Wang) and at least one component of the plurality of components (110 of Wang). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to etch the release layer of Wang to form a gap as taught by Meitl in order to have the predictable result of better control during the transfer process of the component and reflect or absorb any shock wave during manufacturing and ultimately mitigate any damage to the device (p.150-152 of Meitl). Re claim 12: Wang in view of Vanfleteren in view of Meitl teaches the assembly of Claim 11, wherein the undercut region (32 of Meitl) comprises a deposited material (60 can be dielectric material such as SiO, p.144 of Meitl, and would be within undercut area 32 of Meitl in device of Wang). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to include the deposited material 60 of Meitl in the device of Wang in order to have the predictable result of protecting the plurality of components and mitigate damage to a completed device (p.150 of Meitl). Claim 15 is rejected under 35 U.S.C. 103 as being unpatentable over Wang in view of Vanfleteren as applied to claim 14 above, and further in view of Sheats (US 2007/0040258 A1). Re claim 15: Wang in view of Vanfleteren is silent as to explicitly teaching the process of Claim 14, wherein encasing the plurality of components with the embedding material layer is performed by a spray process. Wang and Vanfleteren in view of Sheats teaches the process of Claim 14, wherein encasing the plurality of components (110 of Wang) with the embedding material layer (EML of Wang) is performed by a spray process (p.31 of Sheats). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to apply the embedding material layer of Wang by spray coating as mentioned in Sheats since it is a well-known technique to ensure proper adhesion and coverage to the release layer and ultimately improve contact reliability against thermal recycling in the device (p.31-33 of Sheats) Claim 17 is rejected under 35 U.S.C. 103 as being unpatentable over Wang in view of Vanfleteren as applied in claim 16 above. Re claim 17: Wang in view of Vanfleteren is silent to teach the process of Claim 16, further comprising placing the wired laminate (WL) into a device and electrically connecting the wired laminate (WL) to the device. However, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to recognize the wired laminate would be put into a device and electrically connected since it is part of a chip package and chip packages are known to be in most common devices such as mobile devices. Response to Arguments Applicant’s arguments with respect to claims 1 and 18 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to RICKY VERDES whose telephone number is (703)756-1401. The examiner can normally be reached Monday - Friday 07:30 - 03:30 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jessica Manno can be reached on (571) 272-2339. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /RICKY VERDES/ Examiner, Art Unit 2898 /JESSICA S MANNO/SPE, Art Unit 2898
Read full office action

Prosecution Timeline

Mar 30, 2022
Application Filed
Feb 09, 2025
Non-Final Rejection — §103
Aug 13, 2025
Response Filed
Nov 05, 2025
Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604741
DEEP TRENCH CAPACITOR (DTC) REGION IN SEMICONDUCTOR PACKAGE
2y 5m to grant Granted Apr 14, 2026
Patent 12593524
SEMICONDUCTOR PACKAGE
2y 5m to grant Granted Mar 31, 2026
Patent 12588539
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRIC POWER CONVERTER
2y 5m to grant Granted Mar 24, 2026
Patent 12557441
DISPLAY DEVICE USING MICRO-LEDS AND METHOD FOR MANUFACTURING SAME
2y 5m to grant Granted Feb 17, 2026
Patent 12550492
FLIP LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR
2y 5m to grant Granted Feb 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

3-4
Expected OA Rounds
78%
Grant Probability
99%
With Interview (+31.3%)
3y 10m
Median Time to Grant
Moderate
PTA Risk
Based on 23 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month