Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined
under the first inventor to file provisions of the AIA .
In the event the determination of the status of the application as subject to AIA 35
U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
Election/Restrictions
Applicant’s election without traverse of Group I (Claims 13-20) in the reply filed
on December 15, 2025 is acknowledged.
Claims 1-12 are withdrawn from further consideration pursuant to 37 CPR
1.142(b) as being drawn to nonelected inventions, there being no allowable generic or linking claim.
DETAILED ACTION
Foreign Priority
Receipt is acknowledged of certified copies of papers submitted under 35 U.S.C.
119 (a)-(d), which papers have been placed of record in the file.
Specification
The title is objected to for failure to be sufficiently descriptive.
The specification has not been checked to the extent necessary to determine the
presence of all possible minor errors. The applicant's cooperation is requested in correcting any errors of which the applicant may become aware in the specification.
Claim Objections
Claims 13-15, and 19-20 are objected to because of the following informalities:
Claim 13
lines 4-7 and 9, “the pillars” should be --the array of pillars--
Claim 14
lines 3-6 and 8-9, “the pillars” should be --the array of pillars--
Claim 15
lines 6-7, “the first and second electrodes” should be –the first electrode and the at least one second electrode--
Claims 19-20
line 1, “the pillars” should be --the array of pillars--
Appropriate correction is required.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of AIA 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention.
Claims 13-20 are rejected under AIA 35 U.S.C. 102(a)(1) as being anticipated
by Mahmud et al. (U.S. Publication No. 2011/0305048; hereinafter “Mahmud”).
Regarding claim 13, Mahmud discloses a use of a piezoelectric device (Fig. 1) for generating or detecting acoustic waves (Fig. 1; [0114] – sensing “compressive force”), the piezoelectric device (Fig. 1) comprising a first substrate (Fig. 1, Shim Substrate) with an array of pillars (Figs. 1-2, 1D ZnO nanostructures) comprising piezoelectric material (Figs. 1-2, ZnO), a first piezoelectric layer (Figs. 1-2, AZO) integrally connected (Fig. 1) with the pillars (Figs. 1-2, 1D ZnO nanostructures) on respective first ends (Figs. 1-2, first ends of 1D ZnO nanostructures) of the pillars (Figs. 1-2, 1D ZnO nanostructures) between (Fig. 1) the first substrate (Fig. 1, Shim Substrate) and the pillars (Figs. 1-2, 1D ZnO nanostructures), wherein the first piezoelectric layer (Figs. 1-2, AZO) forms a base structure (Figs. 1-2, AZO base structure) between (Fig. 1) the respective first ends (Figs. 1-2, first ends of 1D ZnO nanostructures) of the pillars (Figs. 1-2, 1D ZnO nanostructures), and a second piezoelectric layer (Figs. 1-2, PMMA) integrally connected (Fig. 1) with the pillars (Figs. 1-2, 1D ZnO nanostructures) on respective second ends (Figs. 1-2, second ends 1D ZnO nanostructures) of the pillars (Figs. 1-2, 1D ZnO nanostructures) opposite (Fig. 1) the first substrate (Fig. 1, Shim Substrate), wherein the second piezoelectric layer (Figs. 1-2, PMMA) forms (Fig. 1) a bridging structure (Figs. 1-2, PMMA bridging structure) acting (Fig. 1) as a platform (Figs. 1-2, PMMA bridging structure platform) of piezoelectric material (Figs. 1-2, PMMA) between (Fig. 1) the respective second ends (Figs. 1-2, second ends 1D ZnO nanostructures) of the pillars (Figs. 1-2, 1D ZnO nanostructures).
Regarding claim 14, Mahmud discloses a piezoelectric device comprising a first substrate with an array of pillars (Figs. 1-2, 1D ZnO nanostructures) comprising piezoelectric material (Figs. 1-2, ZnO), a first piezoelectric layer (Figs. 1-2, AZO) integrally connected (Fig. 1) with the pillars (Figs. 1-2, 1D ZnO nanostructures) on respective first ends (Figs. 1-2, first ends of 1D ZnO nanostructures) of the pillars (Figs. 1-2, 1D ZnO nanostructures) between (Fig. 1) the first substrate (Fig. 1, Shim Substrate) and the pillars (Figs. 1-2, 1D ZnO nanostructures), wherein the first piezoelectric layer (Figs. 1-2, AZO) forms a base structure (Figs. 1-2, AZO base structure) between (Fig. 1) the respective first ends (Figs. 1-2, first ends of 1D ZnO nanostructures) of the pillars (Figs. 1-2, 1D ZnO nanostructures), and a second piezoelectric layer (Figs. 1-2, PMMA) integrally connected (Fig. 1) with the pillars (Figs. 1-2, 1D ZnO nanostructures) on respective second ends (Figs. 1-2, second ends 1D ZnO nanostructures) of the pillars (Figs. 1-2, 1D ZnO nanostructures) opposite (Fig. 1) the first substrate (Fig. 1, Shim Substrate), wherein the second piezoelectric layer (Figs. 1-2, PMMA) forms (Fig. 1) a bridging structure (Figs. 1-2, PMMA bridging structure) acting (Fig. 1) as a platform (Figs. 1-2, PMMA bridging structure platform) of piezoelectric material (Figs. 1-2, PMMA) between (Fig. 1) the respective second ends (Figs. 1-2, second ends 1D ZnO nanostructures) of the pillars (Figs. 1-2, 1D ZnO nanostructures).
Regarding claim 15, Mahmud discloses the piezoelectric device according to claim 14, comprising: a first electrode (Figs. 1-2, Chromium) between (Fig. 1) the first piezoelectric layer (Figs. 1-2, AZO) and first substrate (Fig. 1, Shim Substrate), electrical contacts (Figs. 1-2, Aluminum electrical contacts) forming (Fig. 1) at least one second electrode (Figs. 1-2, Aluminum) on top (Fig. 1) of the platform (Figs. 1-2, PMMA bridging structure platform) formed (Fig. 1) by the second piezoelectric layer (Figs. 1-2, PMMA), and an electrical device (Figs. 1-2; [0316] – “To illustrate the potential of the present hybrid device to power a wireless micro-controller unit (MCU) unit that is used to acquire, process, and transmit data [38], the illustrated embodiment of the hybrid device was used to collect energy using a commercial piezoelectric energy harvesting power supplies unit (Linear Technology's LTC3588-1LTC).”) configured (Fig. 1) to transceive (Figs. 1-2; [0316]) electrical signals (Figs. 1-2; [0316] – signals the MCU is designed to “acquire” and “transmit”) of the first and second electrodes (Figs. 1-2, Chromium/Aluminum) for generating and/or measuring (Fig. 1; [0114] – sensing “compressive force”) of acoustic waves (Fig. 1; [0114] – sensing “compressive force”).
Regarding claim 16, Mahmud discloses the piezoelectric device according to claim 14, wherein the second piezoelectric layer (Figs. 1-2, PMMA) has a first thickness (Figs. 1-2, PMMA thickness) between (Fig. 1) one and thirty micrometers (Figs. 1-2, 0.25 to about 5 microns in height; [0233]; [0182]).
Regarding claim 17, Mahmud discloses the piezoelectric device according to claim 16, wherein the first piezoelectric layer (Figs. 1-2, AZO) has a second thickness (Figs. 1-2, AZO thickness) that is similar (Fig. 1) or the same (Fig. 1) as the first thickness (Figs. 1-2, PMMA thickness - 0.25 to about 5 microns in height; [0233]; [0182]) of the second piezoelectric layer (Figs. 1-2, PMMA) within a factor three difference (Figs. 1-2, AZO thickness – 400nm; [0246]; Examiner’s Note: 400nm is within a factor of 3 smaller than 1 micron.).
Regarding claim 18, Mahmud discloses the piezoelectric device according to claim 14, wherein the first substrate (Fig. 1, Shim Substrate) has a third thickness (Fig. 1, Shim Substrate thickness) of at least half a millimeter (Figs. 1-2, 1.2 cm; [0246]).
Regarding claim 19, Mahmud discloses the piezoelectric device according to claim 14, wherein the pillars (Figs. 1-2, 1D ZnO nanostructures) have a pillar height (Figs. 1-2, 0.25 to about 5 microns in height; [0233]-[0236]; [0255]; [0259]) between five micrometer and three hundred micrometer (Figs. 1-2, 0.25 to about 5 microns in height; [0233]-[0236]; [0255]; [0259]).
Regarding claim 20, Mahmud discloses the piezoelectric device according to claim 14, wherein the pillars (Figs. 1-2, 1D ZnO nanostructures) have a pillar height (Figs. 1-2, 0.25 to about 5 microns in height; [0233]-[0236]; [0255]; [0259]) and a pillar width (Figs. 1-2, 40 nm and about 300 nm in diameter; [0233]-[0236]; [0255]; [0259]), wherein the pillar height (Figs. 1-2, 0.25 to about 5 microns in height; [0233]-[0236]; [0255]; [0259]) is more than the pillar width (Figs. 1-2, 40 nm and about 300 nm in diameter; [0233]-[0236]; [0255]; [0259]) by at least a factor two (Figs. 1-2, 0.25 to about 5 microns in height/40 nm and about 300 nm in diameter; [0233]-[0236]; [0255]; [0259]).
Conclusion
Any inquiry concerning this communication should be directed to MONICA MATA
whose telephone number is (571) 272-8782. The examiner can normally be reached on Monday thru Friday from 7:30 AM to 5:00 PM.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s
supervisor, Dedei Hammond, can be reached on (571) 270-7938. The fax phone number for the organization where this application or proceeding is assigned is (571) 273-8300.
Information regarding the status of an application may be obtained from the Patent Application Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free).
/MONICA MATA/
Patent Examiner, Art Unit 2837
30 January 2026
/EMILY P PHAM/Primary Examiner, Art Unit 2837