Prosecution Insights
Last updated: April 19, 2026
Application No. 17/800,774

SEMICONDUCTOR LASER DEVICE

Final Rejection §103
Filed
Aug 18, 2022
Examiner
NELSON, HUNTER JARED
Art Unit
2828
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Panasonic Holdings Corporation
OA Round
2 (Final)
17%
Grant Probability
At Risk
3-4
OA Rounds
2y 6m
To Grant
29%
With Interview

Examiner Intelligence

Grants only 17% of cases
17%
Career Allow Rate
2 granted / 12 resolved
-51.3% vs TC avg
Moderate +12% lift
Without
With
+12.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
51 currently pending
Career history
63
Total Applications
across all art units

Statute-Specific Performance

§103
51.5%
+11.5% vs TC avg
§102
14.4%
-25.6% vs TC avg
§112
33.7%
-6.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 12 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Response to Amendment Examiner acknowledges the amendments made to claims 1,3,5 and 6. Claim 2 has been cancelled. New claims 12-20 have been added. Claims 4-10 stand as withdrawn. Response to Arguments Applicant’s arguments with respect to claim(s) 1,3 and 11-20 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. Claims 1-3 and 11-20 are rejected under 35 U.S.C. 103 as being unpatentable over by HE et al. (hereinafter HE) (CN 104901149 A) in view of Konno et al. (hereinafter Konno) (JP 2014120621 A) and Dejima et al. (hereinafter Dejima) (US 20190305517 A1) (Examiner notes attached machine translations will be used for the claim mapping of HE and Konno. See PTO-892 form.) Regarding claim 1, HE discloses in Fig. 2, A laser device [Fig. 2] comprising: a plurality of seed sources [201] (Para. [5]) which emit laser beams with wavelengths [λ1,λn] that are different from each other (Para. [5]); a plurality of lens portions [203] (Para. [5]) which collimate the laser beams (Para. [5]); a wavelength dispersion element [205] (Para. [5]) on which the laser beams are incident at angles that are different from each other (Para. [5]), the wavelength dispersion element [205] changing traveling directions of the laser beams according to the wavelengths to generate a combined beam of the laser beams (Para. [5]); a plurality of first reflective surfaces [bottom pair of mirrors 204] (See Examiners markup below) which cause the laser beams to be incident on the wavelength dispersion element [205] at the angles corresponding to the laser beams (Para. [5]); and a plurality of second reflective surfaces [top pair of mirrors 204] (See Examiners markup) each of which guide a corresponding one of the laser beams to a corresponding one of the plurality of first reflective surfaces [bottom pair of mirrors 204] (Para. [5]), wherein the plurality of seed sources [201] (Para. [5]) are arranged in a line [HE Fig. 2], the plurality of first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2] are spaced apart from the plurality of seed sources [HE 201 Fig. 2] in a first direction in which the plurality of seed sources [HE 201 Fig. 2] are arranged [HE vertically Fig. 2]; among the plurality of the first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2], a first reflective surface [HE bottom pair of mirrors 204 Fig. 2] that is positioned farther from the plurality of seed sources [HE 201 Fig. 2] in the first direction [up and down Fig. 2] is positioned farther from the plurality of seed sources [HE 201 Fig. 2] in a second direction [left and right Fig. 2] orthogonal to the first direction [up and down Fig. 2] HE fails to disclose, the plurality of seed sources being semiconductor laser elements and, among the plurality of second reflective surfaces, a second reflective surface positioned closer to a corresponding one of the plurality of first reflective surfaces is positioned farther from the plurality of semiconductor laser elements. Konno discloses in Fig. 1, A plurality of first reflective surfaces [7b,7c,7d] (Para. [0014]) positioned closer to one another than the spacing of a plurality of semiconductor laser elements [1b,1c,1d] (Para. [0015]) incident on a wavelength dispersion element [21 Fig. 3] (Para. [0042]) in a direction away from the semiconductor laser elements [1a-1d] (Para. [0042]) It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to implement the positional relationships of the first reflective surfaces of Konno with the first reflective surfaces of HE and the position of the wavelength dispersion element of HE away from the seed sources as shown in Konno for the purpose of decreasing the distance between each adjacent light beam and generating light beams with high efficiency and high wavelength selectivity. (Konno Paras. [0015-0018,0044]) Examiner notes when the positional relationship of the first reflective surface of Konno is implemented with the first reflective surfaces of HE, the limitation of “a second reflective surface positioned closer to a corresponding one of a plurality of first reflective surfaces is positioned farther from a plurality of semiconductor laser elements.” Is met as the first reflective surfaces are closer to one another, and therefore the second reflective surface farthest from the seed sources is closer to its respective first reflective surface. HE in view of Konno fails to disclose, the plurality of seed sources being semiconductor laser elements and, Dejima discloses in Fig. 4, a plurality of semiconductor laser sources [102] (Para. [0022]) It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to implement the laser sources of Dejima in place of the laser sources of HE for the purpose of having a laser diode configured to emit light in a wavelength range of 350nm to 550nm. (Dejima Para. [0022]) PNG media_image1.png 588 887 media_image1.png Greyscale Regarding claim 3, HE in view of Konno and Dejima as applied to claim 1 above further discloses, wherein two sets [HE set of 202,203,204 and 205 of λ1 and λn Fig. 2] each including at least one of the plurality of semiconductor laser elements [Dejima 102 Fig. 4], at least one of the plurality of lens portions [HE 203 Fig. 2] (HE Para. [5]), at least one of the plurality of first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2] (HE Para. [5]), and at least one of the plurality of second reflective surfaces [HE top pair of mirrors 204 Fig. 2] (HE Para. [5]) are arranged in the first direction, the at least one of the plurality of first reflective surfaces [HE first bottom mirror 204 Fig. 2] (HE Para. [5]) in a first one [HE set of elements for λ1 Fig. 2] of the two sets [HE λ1 and λn Fig. 2] being adjacent to the at least one of the plurality of first reflective surfaces [HE second bottom mirror 204 Fig. 2] (HE Para. [5]) in a second one [HE set of elements for λn Fig. 2] of the two sets [HE set of 202,203,204 and 205 of λ1 and λn Fig. 2] (See Examiners markup below). Regarding claim 11, HE in view of Konno and Dejima as applied to claim 1 above further discloses in Fig. 2 of HE, wherein the wavelength dispersion element [205] is a diffraction grating (HE Para. [5]). Regarding claim 12, HE in view of Konno and Dejima as applied to claim 1 above further discloses, wherein the plurality of semiconductor laser elements [HE 201 Fig. 2] (Para. [5]) (Dejima Para. [102]) do not face the wavelength dispersion element [HE 205 Fig. 2], and the plurality of first reflective surfaces face the wavelength dispersion element [See Konno Figs. 1 and 3]. Regarding claim 13, He in view of Konno and Dejima as applied to claim 1 above further discloses wherein the wavelength dispersion element [HE 205 Fig. 2] (Para. [5]) is disposed farther from the plurality of semiconductor laser elements [HE 201 Fig. 2] (HE Para. [5]) (Dejima Para. [102]) than the plurality of first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2] in the second direction [See Konno 7b-7d and 21 Figs. 1 and 3]. Regarding claim 14, He in view of Konno and Dejima as applied to claim 1 above further discloses wherein the laser beams emitted from the plurality of semiconductor laser elements [HE 201 Fig. 2] (HE Para. [5]) (Dejima Para. [102]) are first incident on the plurality of second reflective surfaces [HE top pair of mirrors 204 Fig. 2] (HE Para. [5]) and then incident on the plurality of first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2], respectively. Regarding claim 15, He in view of Konno and Dejima as applied to claim 1 above further discloses wherein the wavelength dispersion element [HE 205 Fig. 2] (position of Konno 21 Fig. 3) (Konno Para. [0044]) is disposed farther from the plurality of semiconductor laser elements [HE 201 Fig. 2] (HE Para. [5]) (Dejima Para. [102]) than the plurality of second reflective surfaces [HE top pair of mirrors 204 Fig. 2] (HE Para. [5]) [See Konno 21 Fig. 3] in the second direction. Regarding claim 16, He in view of Konno and Dejima as applied to claim 1 above further discloses wherein, in a second direction, the plurality of first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2] (position of Konno 7b-7d Fig. 1), the plurality of second reflective surfaces [HE top pair of mirrors 204 Fig. 2] (HE Para. [5]), and the wavelength dispersion element [HE 205 Fig. 2] (position of Konno 21 Fig. 3) (Konno Para. [0044]) are disposed in order of increasing distance from the plurality of semiconductor laser elements [HE 201 Fig. 2] (HE Para. [5]) (Dejima Para. [102]). Regarding claim 17, HE discloses in Fig. 2, A laser device [Fig. 2] comprising: a plurality of seed sources [201] (Para. [5]) which emit laser beams with wavelengths [λ1,λn] that are different from each other (Para. [5]); a plurality of lens portions [203] (Para. [5]) which collimate the laser beams (Para. [5]); a wavelength dispersion element [205] (Para. [5]) on which the laser beams are incident at angles that are different from each other (Para. [5]), the wavelength dispersion element [205] changing traveling directions of the laser beams according to the wavelengths to generate a combined beam of the laser beams (Para. [5]); a plurality of first reflective surfaces [bottom pair of mirrors 204] (See Examiners markup below) which cause the laser beams to be incident on the wavelength dispersion element [205] at the angles corresponding to the laser beams (Para. [5]); and a plurality of second reflective surfaces [top pair of mirrors 204] (See Examiners markup) each of which guide a corresponding one of the laser beams to a corresponding one of the plurality of first reflective surfaces [bottom pair of mirrors 204] (Para. [5]), wherein the plurality of seed sources [201] (Para. [5]) are arranged in a line [HE Fig. 2], the plurality of first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2] are spaced apart from the plurality of seed sources [HE 201 Fig. 2] in a first direction in which the plurality of seed sources [HE 201 Fig. 2] are arranged [HE vertically Fig. 2]; among the plurality of the first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2], a first reflective surface [HE bottom pair of mirrors 204 Fig. 2] that is positioned farther from the plurality of seed sources [HE 201 Fig. 2] in the first direction [up and down Fig. 2] is positioned farther from the plurality of seed sources [HE 201 Fig. 2] in a second direction [left and right Fig. 2] orthogonal to the first direction [up and down Fig. 2] among the plurality of the first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2], a first reflective surface [HE bottom pair of mirrors 204 Fig. 2] that is positioned farther from the plurality of seed sources [HE 201 Fig. 2] in the first direction [up and down Fig. 2] is (1) positioned farther from the plurality of seed sources [HE 201 Fig. 2] in a second direction [left and right Fig. 2] orthogonal to the first direction HE fails to disclose, the plurality of seed sources being semiconductor laser elements and, among the plurality of second reflective surfaces, a second reflective surface positioned closer to a corresponding one of the plurality of first reflective surfaces is positioned farther from the plurality of semiconductor laser elements and among the plurality of the first reflective surfaces, a first reflective surface that is positioned farther from the plurality of seed sources in the first direction is (1) positioned farther from the plurality of seed sources in a second direction orthogonal to the first direction and (2) positioned closer to the wavelength dispersion element. Konno discloses in Fig. 1, A plurality of first reflective surfaces [7b,7c,7d] (Para. [0014]) positioned closer to one another than the spacing of a plurality of semiconductor laser elements [1b,1c,1d] (Para. [0015]) incident on a wavelength dispersion element [21 Fig. 3] (Para. [0042]) in a direction away from the semiconductor laser elements [1a-1d] (Para. [0042]) It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to implement the positional relationships of the first reflective surfaces of Konno with the first reflective surfaces of HE and the position of the wavelength dispersion element of HE away from the seed sources as shown in Konno for the purpose of decreasing the distance between each adjacent light beam and generating light beams with high efficiency and high wavelength selectivity. (Konno Paras. [0015-0018,0044]) Examiner notes when the positional relationship of the first reflective surface of Konno is implemented with the first reflective surfaces of HE, the limitation of “a second reflective surface positioned closer to a corresponding one of a plurality of first reflective surfaces is positioned farther from a plurality of semiconductor laser elements.” Is met as the first reflective surfaces are closer to one another, and therefore the second reflective surface farthest from the seed sources is closer to its respective first reflective surface. Further, when the wavelength dispersion element of HE takes the same position shown in Konno, a first reflective surface that is positioned farther from the plurality of seed sources in the first direction is (1) positioned farther from the plurality of seed sources in a second direction orthogonal to the first direction and (2) positioned closer to the wavelength dispersion element. HE in view of Konno fails to disclose, the plurality of seed sources being semiconductor laser elements and, Dejima discloses in Fig. 4, a plurality of semiconductor laser sources [102] (Para. [0022]) It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to implement the laser sources of Dejima in place of the laser sources of HE for the purpose of having a laser diode configured to emit light in a wavelength range of 350nm to 550nm. (Dejima Para. [0022]) Regarding claim 18, He in view of Konno and Dejima as applied to claim 17 above further discloses wherein the plurality of semiconductor laser elements [HE 201 Fig. 2] (Para. [5]) (Dejima Para. [102]) do not face the wavelength dispersion element [HE 205 Fig. 2], and the plurality of first reflective surfaces face the wavelength dispersion element [See Konno Figs. 1 and 3]. Regarding claim 19, He in view of Konno and Dejima as applied to claim 17 above further discloses wherein the wavelength dispersion element [HE 205 Fig. 2] (position of Konno 21 Fig. 3) (Konno Para. [0044]) is disposed farther from the plurality of semiconductor laser elements [HE 201 Fig. 2] (HE Para. [5]) (Dejima Para. [102]) than the plurality of second reflective surfaces [HE top pair of mirrors 204 Fig. 2] (HE Para. [5]) [See Konno 21 Fig. 3] in the second direction. Regarding claim 20, He in view of Konno and Dejima as applied to claim 17 above further discloses wherein the laser beams emitted from the plurality of semiconductor laser elements [HE 201 Fig. 2] (Para. [5]) (Dejima Para. [102]) are first incident on the plurality of second reflective surfaces [HE top pair of mirrors 204 Fig. 2] (HE Para. [5]) and then incident on the plurality of first reflective surfaces [HE bottom pair of mirrors 204 Fig. 2], respectively. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to HUNTER J NELSON whose telephone number is (571)270-5318. The examiner can normally be reached Mon-Fri. 8:30am-5:00 ET. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, MinSun Harvey can be reached at (571) 272-1835. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /H.J.N./Examiner, Art Unit 2828 /MINSUN O HARVEY/Supervisory Patent Examiner, Art Unit 2828
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Prosecution Timeline

Aug 18, 2022
Application Filed
Jun 18, 2025
Non-Final Rejection — §103
Sep 18, 2025
Response Filed
Dec 29, 2025
Final Rejection — §103 (current)

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Prosecution Projections

3-4
Expected OA Rounds
17%
Grant Probability
29%
With Interview (+12.5%)
2y 6m
Median Time to Grant
Moderate
PTA Risk
Based on 12 resolved cases by this examiner. Grant probability derived from career allow rate.

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