DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Response to Arguments
Applicant’s arguments with respect to claims 1, 4 and 5 have been considered but are moot because the examiner has cited Globisch et al. (US PG Pub 2021/0336346) to teach the amended limitations of claims 1, 4 and 5
Claim Rejections - 35 USC § 103
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or nonobviousness.
Claims 1, 4 and 5 are rejected under 35 U.S.C. 103 as being unpatentable over Kajiki (US PG Pub 2010/0310976) in view of Thomas et al. (US PG Pub 2006/0192115) and Globisch et al. (US PG Pub 2021/0336346).
Regarding claim 1, Kajiki discloses: a method for manufacturing a terahertz (THz) device, comprising: forming a light-absorbing structure (1) (InGaAs in the 1.5 µm wavelength band), absorbing a radiation having a wavelength ranging from 500 nm to 1600 nm, on a substrate (7) (Fig. 1B, [0036], [0037]) wherein: the substrate comprises a semiconductor substrate comprising GaAs, InP, GaN, SiC or Si, a quartz substrate, or a combination thereof (SI-GaAs) (Fig. 1B, [0036], [0037]); and the light-absorbing structure comprises a semiconductor structure comprising a semiconductor material comprising a III-V compound (InGaAs in the 1.5 µm wavelength band), a IV element, a IV compound, or a combination thereof, a low-dimensional material, a magnetic material, a topological material, or a combination thereof (Fig. 1B, [0036], [0037]), in the case where the semiconductor substrate is made of Si, the semiconductor structure comprises a first semiconductor layer comprising Ge and a second semiconductor layer comprising GeSn, the first semiconductor layer is deposited on the semiconductor substrate using a first CVD process with a gas source comprising H2 and GeHg, and the second semiconductor layer is deposited on the first semiconductor layer using a second CVD process with a gas source comprising Ge2H6 and SnCl4, and wherein the first CVD process is performed at a temperature of about 375°C to about 400°C, and the second CVD process is performed at a temperature of about 320°C (substrate is made of GaAs).
Kajiki does not disclose: by using a chemical vapor deposition (CVD) process performed at a pressure ranging from about 10 torr to about 100 torr; performing a doping process on the semiconductor structure of the light-absorbing structure, so that a dopant comprising Be, C, Au, Er, or Fe is doped into the semiconductor structure.
Thomas et al. disclose: growing semiconductor material in a metal organic chemical vapor deposition reactor (MOCVD) at 60 torr ({0044]). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Kajiki by growing the substrate and light absorbing structure using chemical vapor deposition because one of ordinary skill in the art would have been capable of applying this known technique to a known device (method, or product) that was ready for improvement and the results would have been predictable to one of ordinary skill in the art. In the instant case, the predictable result is a terahertz device comprising InGaAs formed over a GaAs substrate.
Kajiki as modified do not disclose: performing a doping process on the semiconductor structure of the light-absorbing structure, so that a dopant comprising Be, C, Au, Er, or Fe is doped into the semiconductor structure.
Globisch et al. disclose: photoconductive material comprises e.g. a plurality of epitaxial layers, e.g. consisting of InGaAs, InGaAsP and/or InAlAs (e.g. doped with Be or Fe or another transition element) ([0029]). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Kajiki as modified by forming the semiconductor structure so that InGaAs is doped with Be or Fe because one of ordinary skill in the art would have been capable of applying this known technique to a known device (method, or product) that was ready for improvement and the results would have been predictable to one of ordinary skill in the art. In the instant case, the predictable result is a terahertz device comprising Be or Fe doped InGaAs formed over a GaAs substrate.
Regarding claim 4, Kajiki discloses: a method for manufacturing a terahertz (THz) device, comprising forming a light-absorbing structure (1) on a substrate (7) wherein: the substrate comprises a semiconductor substrate, which is made of GaAs (SI-GaAs) (Fig. 1B, [0036], [0037]); and the light-absorbing structure comprises a semiconductor structure formed by a single-layer semiconductor comprising InGaAs (InGaAs in the 1.5 µm wavelength band) (Fig. 1B, [0036], [0037]).
Kajiki does not disclose: by using a chemical vapor deposition (CVD) process performed at a pressure ranging from about 10 torr to about 100 torr and performing a doping process on the semiconductor structure of the light-absorbing structure, so that a dopant comprising Be, C, Au, Er, or Fe is doped into the semiconductor structure..
Thomas et al. disclose: growing semiconductor material in a metal organic chemical vapor deposition reactor (MOCVD) at 60 torr ({0044]). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Kajiki by growing the substrate and light absorbing structure using chemical vapor deposition because one of ordinary skill in the art would have been capable of applying this known technique to a known device (method, or product) that was ready for improvement and the results would have been predictable to one of ordinary skill in the art. In the instant case, the predictable result is a terahertz device comprising InGaAs formed over a GaAs substrate.
Kajiki as modified do not disclose: performing a doping process on the semiconductor structure of the light-absorbing structure, so that a dopant comprising Be, C, Au, Er, or Fe is doped into the semiconductor structure.
Globisch et al. disclose: photoconductive material comprises e.g. a plurality of epitaxial layers, e.g. consisting of InGaAs, InGaAsP and/or InAlAs (e.g. doped with Be or Fe or another transition element) ([0029]). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Kajiki as modified by forming the semiconductor structure so that InGaAs is doped with Be or Fe because one of ordinary skill in the art would have been capable of applying this known technique to a known device (method, or product) that was ready for improvement and the results would have been predictable to one of ordinary skill in the art. In the instant case, the predictable result is a terahertz device comprising Be or Fe doped InGaAs formed over a GaAs substrate.
Regarding claim 5, Kajiki as modified do not explicitly disclose: wherein a gas source used to form the single-layer semiconductor in the CVD process comprises AsH3, trimethyl gallium (TMGa), and trimethyl indium (TMIn).
The examiner takes official notice that the CVD process comprises AsH3 (arsine), trimethyl gallium (TMGa), and trimethyl indium (TMIn) was well known in the art before the time of filing. For example, see Liu (US PG Pub 2004/0091011) (0453]). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Kajiki as modified by using AsH3, trimethyl gallium (TMGa), and trimethyl indium (TMIn) as the gas sources in the CVD process because these gases are commonly used to grow semiconductor materials.
Allowable Subject Matter
Claims 6 and 7 are allowed.
Claim 6 is allowable as the prior art fails to anticipate or render obvious the claimed limitations including “…a semiconductor substrate, which is made of InP…the at least one first semiconductor layer comprises InAlAs, and the at least one second semiconductor layer comprises InGaAs.”
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to XINNING(TOM) NIU whose telephone number is (571)270-1437. The examiner can normally be reached M-F: 9:30am-6:00pm.
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/XINNING(Tom) NIU/Primary Examiner, Art Unit 2828
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