Prosecution Insights
Last updated: September 17, 2026
Application No. 17/927,608

DIAMOND COMPOSITE AND METHOD OF MANUFACTURING THE SAME

Final Rejection §102
Filed
Nov 23, 2022
Priority
May 29, 2020 — JP 2020-094917 +2 more
Examiner
ARANT, HARRY E
Art Unit
3763
Tech Center
3700 — Mechanical Engineering & Manufacturing
Assignee
National Institute Of Advanced Industrial Scince And Technology
OA Round
2 (Final)
50%
Grant Probability
Moderate
3-4
OA Rounds
0m
Est. Remaining
71%
With Interview

Examiner Intelligence

Grants 50% of resolved cases
50%
Career Allowance Rate
292 granted / 589 resolved
-20.4% vs TC avg
Strong +21% interview lift
Without
With
+21.3%
Interview Lift
resolved cases with interview
Typical timeline
3y 6m
Avg Prosecution
40 currently pending
Career history
640
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
58.2%
+18.2% vs TC avg
§102
22.7%
-17.3% vs TC avg
§112
18.2%
-21.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 589 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Status of the Claims The status of the claims as filed in the reply dated 4/28/2026 are as follows: Claims 1 and 6 are amended, Claims 10-16 are withdrawn from consideration, Claims 1-16 are currently pending. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-9 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Miyazaki et al. “Band-alignment analysis of Diamon-Al2O3 Interface”, Extended Abstracts of the 79th Japan Society of Applied Physics Autumn Meeting, The Japan Society of Applied Physics, 21P-232-6, 2018, previously cited). Regarding claim 1, Miyazaki discloses a diamond composite, comprising: a first base substrate (Al2O3, see page 1 of translation) which has an oxide layer MOx of element M (Al) on the surface thereof and contains the element M in the composition; and a second base substrate (diamond, see page 1 of translation) which is bonded to the oxide layer and is composed of diamond, wherein the M is one or more selected Al, elements from Sc with atomic number 21 to Ga with atomic number 31, elements from Y with atomic number 39 to Sn with atomic number 50, elements from La with atomic number 57 to Ir with atomic number 77, Ti, Pb, Si, Ge, As, Se, Sb, Te, and Bi, and the second base substrate is bonded to the surface of the oxide layer of the first base substrate by M-O—C bonding of at least some C atoms on the surface of the diamond constituting the second base substrate (as there would be inevitably Carbon atoms on the surface of diamond). The limitation of “the surfaces are treated to introduce OH groups before bonding, and the surfaces containing OH groups are brought into contact with each other and dehydrated to form an M-O-C bond” is considered a product-by-process limitation. The patentability of a product does not depend on its method of production. If the product in the product-by-process claim is the same as or obvious from a product of the prior art, the claim is unpatentable even though the prior product was made by a different process." In re Thorpe, 777 F.2d 695, 698, 227 USPQ 964, 966 (Fed. Cir. 1985) Regarding claim 2, Miyazaki further discloses wherein the M is Al (see page 1 of translation. Regarding claim 3, Miyazaki further discloses wherein the first base substrate (of Al2O3) is a heat sink or a heat spreader (as Miyazaki teaches attaching the substrate to a semiconductor, see pate 1 of translation). Regarding claim 4, Miyazaki further discloses wherein the surface of the diamond constituting the second base substrate is bonded to the oxide layer of the first base substrate (of Al2O3), and an electronic element is formed on the other surface of the second base substrate, which is not bonded to first base substrate (as Miyazaki teaches providing the diamond- Al2O3 as an interface of a metal–oxide–semiconductor field-effect transistor metal–oxide–semiconductor field-effect transistor, see page 1 of translation). Regarding claim 5, Miyazaki further discloses electronic device (as Miyazaki teaches providing the diamond- Al2O3 as an interface of a metal–oxide–semiconductor field-effect transistor metal–oxide–semiconductor field-effect transistor, see page 1 of translation) comprising the diamond composite according to claim 1, wherein the oxide layer of the first base substrate (of Al2O3) is bonded to the surface of the diamond constituting the second base substrate, and an electronic element is formed on the other surface of the first base substrate, which is not bonded to second base substrate (see page of translation). Regarding claim 6, Miyazaki discloses a diamond composite, comprising: a first base substrate (Al2O3, see page 1 of translation) which has an oxide layer MOx of element M (Al) on the surface thereof and contains the element M in the composition; and a second base substrate (diamond) which is bonded to the oxide layer and is composed of polycrystalline diamond(as OH-terminated diamond is a polycrystalline diamond), wherein the M is one or more selected Al, elements from Sc with atomic number 21 to Ga with atomic number 31, elements from Y with atomic number 39 to Sn with atomic number 50, elements from La with atomic number 57 to Ir with atomic number 77, Ti, Pb, Si, Ge, As, Se, Sb, Te, and Bi, and the second base substrate is bonded to the oxide layer of the first base substrate by M-O—C bonding of at least some C atoms on the surface of the polycrystalline diamond constituting the second base substrate (as there would be inevitably Carbon atoms on the surface of diamond). The limitation of “the surfaces are treated to introduce OH groups before bonding, and the surfaces containing OH groups are brought into contact with each other and dehydrated to form an M-O-C bond” is considered a product-by-process limitation. The patentability of a product does not depend on its method of production. If the product in the product-by-process claim is the same as or obvious from a product of the prior art, the claim is unpatentable even though the prior product was made by a different process." In re Thorpe, 777 F.2d 695, 698, 227 USPQ 964, 966 (Fed. Cir. 1985) Regarding claim 7, Miyazaki further discloses wherein the M is Al (see page 1 of translation). Regarding claim 8, Miyazaki further discloses wherein the first base substrate (of Al2O3) is a heat sink or a heat spreader (as Miyazaki teaches attaching the substrate to a semiconductor, see pate 1 of translation). Regarding claim 9, Miyazaki further discloses wherein the surface of the diamond constituting the second base substrate is bonded to the oxide layer of the first base substrate (of Al2O3), and an electronic element is formed on the other surface of the second base substrate, which is not bonded to first base substrate (as Miyazaki teaches providing the diamond- Al2O3 as an interface of a metal–oxide–semiconductor field-effect transistor metal–oxide–semiconductor field-effect transistor, see page 1 of translation). Response to Arguments Applicant's arguments filed 4/28/2026 have been fully considered but they are not persuasive. Applicant argues (pages 8-11) that Miyazaki does not teach that the surfaces are treated to introduce OH groups before bonding, and the surfaces containing OH groups are brought into contact with each other and dehydrated to form an M-O-C bond. However, as laid out above in the rejection this is considered a product-by-process limitation. The patentability of a product does not depend on its method of production. If the product in the product-by-process claim is the same as or obvious from a product of the prior art, the claim is unpatentable even though the prior product was made by a different process." In re Thorpe, 777 F.2d 695, 698, 227 USPQ 964, 966 (Fed. Cir. 1985) Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to HARRY E ARANT whose telephone number is (571)272-1105. The examiner can normally be reached Monday-Friday 10-6 ET. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jianying Atkisson can be reached at (571)270-7740. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /HARRY E ARANT/Primary Examiner, Art Unit 3763
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Prosecution Timeline

Nov 23, 2022
Application Filed
Dec 29, 2025
Non-Final Rejection mailed — §102
Mar 16, 2026
Applicant Interview (Telephonic)
Mar 19, 2026
Examiner Interview Summary
Apr 28, 2026
Response Filed
Jul 21, 2026
Final Rejection mailed — §102 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
50%
Grant Probability
71%
With Interview (+21.3%)
3y 6m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 589 resolved cases by this examiner. Grant probability derived from career allowance rate.

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