DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Objections
Claims 1-25 are objected to because of the following informalities:
(Proposed Amendments) A sensor apparatus comprising:
a semiconductor structure comprising:
a semiconductor substrate,
a bulk region of a first conductivity type formed in the semiconductor substrate,
a source region and a drain region formed in the bulk region, wherein the source region and the drain region are of a second conductivity type opposite to the first conductivity type,
a channel region formed between the source region and the drain region,
a dielectric formed on the channel region for storing a charge due to an irradiation, and
a gate electrode formed on the dielectric;
means for biasing the semiconductor structure to readout a stored charge in the dielectric by exhibiting a current-voltage characteristic, which is proportional to the stored charge in the dielectric,
wherein the means for biasing the semiconductor structure configures the semiconductor structure such that:
the gate electrode and the source region are electrically connected to form a sensor terminal, and the bulk region is biased with a fixed voltage such that the bulk region is reverse biased with respect to the sensor terminal and the drain region, and the drain region is biased with a fixed voltage such that the drain region sinks a channel current sourced from the sensor terminal, and
wherein the channel region is configured to provide a channel current from the sensor terminal to the drain region, which is larger in a magnitude than a reverse biased bulk-sensor current and a reverse-biased bulk-drain diode current; and
means for determining a change in a current-voltage characteristic of the sensor terminal due to an irradiation to provide a measurement of- an irradiation dose to which the semiconductor structure was exposed.
Appropriate correction is required.
Claims 7-11 are objected to because of the following informalities:
7. (Proposed Amendments) The sensor apparatus of Claim 1, wherein the means for determining [[a]] the change in the current-voltage characteristic of the sensor terminal due to the irradiation comprises means for determining for a given constant sensor terminal to drain current applied to the semiconductor structure a change in a sensor terminal to bulk voltage due to an irradiation of the semiconductor structure.
Appropriate correction is required.
Claim 8 is objected to because of the following informalities:
8. (Proposed Amendments) The sensor apparatus of Claim 7, further comprising a current source for applying the constant sensor terminal to drain current, and wherein the means for determining for [[a]] the given constant sensor terminal to drain current applied to the semiconductor structure the change in the sensor terminal to bulk voltage comprises a voltmeter provided between the sensor terminal and the bulk region (previously recited limitations in claim 1).
Appropriate correction is required.
Claim 11 is objected to because of the following informalities:
11. (Proposed Amendments) The sensor apparatus of Claim 9, wherein the length of the channel region, L, is less than the width of the bulk depletion layer, tb, at a maximum sensor terminal to bulk voltage. (Previous status identifier was Previously Presented)
Appropriate correction is required.
Claim 15 is objected to because of the following informalities:
15. (Proposed Amendments) The sensor apparatus of Claim 14, further comprising a current source for applying [[the]] a constant sensor terminal to drain current, wherein the current source is configured to select a sensor terminal to drain current applied so as to minimize a thermal drift of [[the]] a sensor terminal to bulk voltage (a lack of an antecedent basis).
Appropriate correction is required.
Claims 16-18 are objected to because of the following informalities:
16. (Proposed Amendments) The sensor apparatus of Claim 14, further comprising a means for monitoring a temperature of the semiconductor structure and a means for compensating for a thermal drift of [[the]] a sensor terminal to bulk voltage (a lack of an antecedent basis).
Appropriate correction is required.
Claims 23 and 25 are objected to because of the following informalities:
23. (Proposed Amendments) The sensor apparatus of Claim 1,further comprising a wearable patch and an electronic reader, wherein the semiconductor structure is incorporated into the wearable patch, and wherein the means for biasing the semiconductor structure and the means for determining a change [[in]] in a current-voltage characteristic of the sensor terminal due to an irradiation are incorporated into the electronic reader, and wherein the electronic reader is connectable to the wearable patch, wherein the electronic reader is connected to the wearable patch during a readout.
Appropriate correction is required.
Claims 24 and 25 are objected to because of the following informalities:
24. (Proposed Amendments) The sensor apparatus of Claim 1, further comprising a wearable patch and an electronic reader, wherein the semiconductor structure and the means for biasing the semiconductor structure are incorporated into the wearable patch, and wherein the means for determining a change [[in]] in a current-voltage characteristic of the sensor terminal due to an irradiation is incorporated into the electronic reader, and wherein the wearable patch further comprises means for transmission of a sensor terminal current and voltage data to the electronic reader to measure an irradiation dose.
Appropriate correction is required.
Claim 25 is objected to because of the following informalities:
25. (Proposed Amendments) The sensor apparatus of Claim 23 or Claim 24, wherein the wearable patch further comprises an electronic memory and/or an identification means.
Appropriate correction is required.
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION. —The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of pre-AIA 35 U.S.C. 112, second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 8 and 21 are rejected under 35 U.S.C. 112(b) or pre-AIA 35 U.S.C. 112, second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Claim 8 recites a limitation “the sensor and bulk” in line 5, which renders the claim indefinite. There is insufficient antecedent basis for the limitation in the claim.
Claim 21 recites a limitation “the sensor terminal circuit” in line 11, which renders the claim indefinite. There is insufficient antecedent basis for the limitation in the claim.
Allowable Subject Matter
The following is a statement of reasons for the indication of allowable subject matter:
With respect to claims 1-7 and 9-25, Titus et al. (U. S. Patent No. 9,595,519 B2) disclosed a sensor apparatus comprising:
a semiconductor structure comprising:
a semiconductor substrate,
a bulk region (267) of a first conductivity type (N-Type) formed in the semiconductor substrate,
a source region (247) and a drain region (245) formed in the bulk region, wherein the source region and the drain region are of a second conductivity type (P-Type) opposite to the first conductivity type, and
a channel region formed between the source region and the drain region (FIG. 11).
However, the prior art failed to disclose or fairly suggested that the sensor apparatus further comprising:
the semiconductor structure further comprising:
a dielectric formed on the channel region for storing a charge due to an irradiation, and
a gate electrode formed on the dielectric;
means for biasing the semiconductor structure to readout a stored charge in the dielectric by exhibiting a current-voltage characteristic, which is proportional to the stored charge in the dielectric,
wherein the means for biasing the semiconductor structure configures the semiconductor structure such that:
the gate electrode and the source region are electrically connected to form a sensor terminal, and the bulk region is biased with a fixed voltage such that the bulk region is reverse biased with respect to the sensor terminal and the drain region, and the drain region is biased with a fixed voltage such that the drain region sinks a channel current sourced from the sensor terminal, and
wherein the channel region is configured to provide a channel current from the sensor terminal to the drain region, which is larger in a magnitude than a reverse biased bulk-sensor current and a reverse-biased bulk-drain diode current; and
means for determining a change in a current-voltage characteristic of the sensor terminal due to an irradiation to provide a measurement of- an irradiation dose to which the semiconductor structure was exposed.
Response to Amendment
Applicant’s amendments filed 06 November 2025 with respect to the drawings have been fully considered. The objections of the drawings have been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 1-25 have been fully considered. The objections of claims 1-25 have been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 2 and 3 have been fully considered. The objection of claims 2 and 3 has been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 7-11 have been fully considered. The objection of claims 7-11 has been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claim 8 have been fully considered. The objection of claim 8 has been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 9-11 have been fully considered. The objection of claims 9-11 has been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 13-18 have been fully considered. The objections of claims 13-18 have been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 14-18 have been fully considered. The objections of claims 14-18 have been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claim 15 have been fully considered. The objections of claim 15 have been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 16-18 have been fully considered. The objection of claims 16-18 has been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 1-25 have been fully considered. The rejection of claims 1-25 under 35 U.S.C. 112(a) or pre-AIA 35 U.S.C. 112, first paragraph, has been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 1-7 and 9-25 have been fully considered. The rejection of claims 1-7 and 9-25 under 35 U.S.C. 112(b) or pre-AIA 35 U.S.C. 112, second paragraph, has been withdrawn.
Applicant’s amendments filed 06 November 2025 with respect to claims 5, 15, and 23-25 have been fully considered. The rejection of claims 5, 15, and 23-25 under 35 U.S.C. 112(d) or pre-AIA 35 U.S.C. 112, fourth paragraph, has been withdrawn.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.
Titus et al. (U. S. Patent No. 9,595,519 B2) disclosed a combination metal-oxide-semiconductor field-effect transistor (MOSFET) and a junction field-effect transistor (JFET).
Marko Andjelkovic et al., A Design Concept for Radiation Hardened RADFET Readout System for Space Applications, Microprocessors and Microsystems Volume 90, April 2022, 104486.
Applicant's amendment necessitated the new ground of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to Allen C. Ho, whose telephone number is (571) 272-2491. The examiner can normally be reached Monday - Friday 10AM - 6PM.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, David J. Makiya, can be reached at (571) 272-2273. The fax phone number for the organization where this application or proceeding is assigned is (571) 273-8300.
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Allen C. Ho, Ph.D.
Primary Examiner
Art Unit 2884
/Allen C. Ho/Primary Examiner, Art Unit 2884 Allen.Ho@uspto.gov