DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Drawings
The drawings are objected to under 37 CFR 1.83(a). The drawings must show every feature of the invention specified in the claims. Therefore, method steps of claim 1 reciting a method for patterning a quantum dot layer including a hole transport layer as a front film layer must be shown or the feature(s) canceled from the claim(s). No new matter should be entered.
Corrected drawing sheets in compliance with 37 CFR 1.121(d) are required in reply to the Office action to avoid abandonment of the application. Any amended replacement drawing sheet should include all of the figures appearing on the immediate prior version of the sheet, even if only one figure is being amended. The figure or figure number of an amended drawing should not be labeled as “amended.” If a drawing figure is to be canceled, the appropriate figure must be removed from the replacement sheet, and where necessary, the remaining figures must be renumbered and appropriate changes made to the brief description of the several views of the drawings for consistency. Additional replacement sheets may be necessary to show the renumbering of the remaining figures. Each drawing sheet submitted after the filing date of an application must be labeled in the top margin as either “Replacement Sheet” or “New Sheet” pursuant to 37 CFR 1.121(d). If the changes are not accepted by the examiner, the applicant will be notified and informed of any required corrective action in the next Office action. The objection to the drawings will not be held in abeyance.
Claim Rejections - 35 USC § 112
The following is a quotation of the first paragraph of 35 U.S.C. 112(a):
(a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention.
The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112:
The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor of carrying out his invention.
Claims 1-3 and 6-15 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the enablement requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to enable one skilled in the art to which it pertains, or with which it is most nearly connected, to make and/or use the invention.
Regarding Claim 1, the subject matter recited in claim 1 fails to comply with the enablement requirement for the following reason: The Specification of the instant application describes a method for patterning a quantum dot layer recited in claim 1 using an electron transport layer as a front film layer (See Figs. 1-3K and paragraphs 55-68). While the Specification further describes that “a specific quantum dot layer patterning process is similar to the aforementioned manufacturing method for the device of the inverted structure, which is not repeated here” (paragraph 106), the Specification does not explicitly describe an enabling disclosure 1) how a hole transport layer and a sacrificial layer with their material choices are selected for hydrophilic and hydrophobic properties during sequential formation step and 2) how the method steps of claim 1 including etching conditions of the sacrificial layer, removing conditions of the remaining sacrificial layer, and mask layer formation conditions are changed due to the hole transport layer functioning as the front film layer. As such, the Specification does not support any enabling disclosure for the claimed subject with the hole transport layer functioning as the front film layer as discussed above. Then, undue experimentation would be required for determining such material choices for the hole transport layer and the sacrificial layer and processing conditions for completing the method for patterning the quantum dot layer as recited in claim 1. Accordingly, after considering all of the evidence of record related to the pertinent Wands factors and reasons discussed above, one of ordinary skill in the art at the time of the invention would not have been able to make and/or use the full scope of the claimed invention without undue experimentation. Claims 2-3 and 6-15, which depend from claim 1, are also rejected at least by virtue of their dependencies.
Claim Rejections - 35 USC § 103
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
Claims 1-3 and 11-15 are rejected under 35 U.S.C. 103 as being unpatentable over Mei (US 2022/0251446 A1).
Regarding claim 1, Mei teaches a method for patterning an emission layer, comprising: sequentially forming a front film layer (190) and a sacrificial layer (171), which are stacked, on a substrate (150); wherein the front film layer is an electron transport layer or a hole transport layer (190 is an electron transport layer), one of the sacrificial layer and the front film layer is hydrophilic (190, which has 171 is formed thereon, is considered hydrophilic), and the other of the sacrificial layer and the front film layer is hydrophobic (171 formed of an alcohol-soluble polymer, for example, polyvinylpyrrolidone having hydrophobic property) (Fig. 4A and paragraphs 86-88 and 116); forming a mask layer (163) having a through hole (1630) on the sacrificial layer, wherein the through hole corresponds to a target region (1630 is a target region), and etching the sacrificial layer in the target region under the shielding of the mask layer (Figs. 4B-4C and paragraphs 89-92); laying a quantum dot material (120) (Fig. 4D and paragraph 93); and forming a patterned emission layer (122) in the target region by removing a remaining sacrificial layer (Fig. 4E and paragraph 94).
Mei does not explicitly teach curing quantum dots in the target region. However, with Mei teaching the step of coating the quantum dot solution and forming the quantum dot light-emitting material layer (Figs. 4D-4E and paragraphs 93-94), it would have been obvious to one of ordinary skill in the art to recognize that a subsequent curing step is followed after coating the quantum dot solution in order to solidify the quantum dot solution for forming the quantum dot light-emitting layer.
Regarding claim 2, Mei teaches wherein the forming the mask layer having the through hole on the sacrificial layer specifically comprises: forming a photoresist on the sacrificial layer, patterning the photoresist, and removing the photoresist in the target region to form the mask layer having the through hole (Fig. 4B and paragraphs 89-90).
Regarding claim 3, Mei teaches wherein the sequentially forming the front film layer and the sacrificial layer, which are stacked, on the substrate specifically comprises: forming the electron transport layer on the substrate; wherein the electron transport layer is the front film layer, and the electron transport layer is hydrophilic; and forming the sacrificial layer on a side, facing away from the substrate, of the electron transport layer; wherein the sacrificial layer is hydrophobic (Fig. 4A and paragraphs 86-88 and 116 and see the rejection of claim 1 above).
Regarding claim 11, Mei teaches wherein the removing the remaining sacrificial layer specifically comprises: removing the remaining sacrificial layer by solvent soaking or solvent rinsing (paragraphs 94-97, a lift-off processing).
Regarding claim 12, Mei teaches wherein the patterning the photoresist, and removing the photoresist in the target region specifically comprises: removing the photoresist in the target region with a solvent (paragraphs 64-6 and 90). Furthermore, while Mei does not explicitly teach a mask for the photolithography processing using the negative photoresist material, it would have been obvious to one of ordinary skill in the art to utilize the mask in order to pattern the photoresist during the photolithography processing.
Regarding claim 13, Mei teaches wherein the etching the sacrificial layer in the target region under the shielding of the mask layer specifically comprises: etching away the sacrificial layer in the target region as discussed above. While Mei does not explicitly teach oxygen plasma for removing the sacrificial layer, it would have been obvious to one of ordinary skill in the art to recognize that the oxygen plasma etch process is a well-known plasma etch method in the semiconductor manufacturing technology to remove the desired layer.
Regarding claim 14, Mei teaches wherein the laying the quantum dot material, and curing quantum dots in the target region specifically comprises: laying a quantum dot material with a photosensitive material; and irradiating the quantum dot material in the target region with light of a preset wavelength; wherein under irradiation with the light of the preset wavelength, the photosensitive material or a product of the photosensitive material after the light irradiation reacts with ligands on the surfaces of the quantum dots, so that the ligands are detached from the surfaces of the quantum dots to change a solubility of the quantum dots in the target region, so that the quantum dots in the target region is subjected to coagulation to cure the quantum dots in the target region; or, the laying the quantum dot material, and curing the quantum dots in the target region specifically comprises: laying a quantum dot material with crosslinkable ligands on a surface of the quantum dot material; and irradiating the quantum dot material in the target region with light of a preset wavelength, so that quantum dots in the target region are crosslinked so as to cure (Fig. 1 and paragraph 45).
Regarding claim 15, Mei teaches a material of the electron transport layer comprises ZnO, ZnMgO or ZnAlOx (paragraph 106).
Claims 1-3, 11-13, and 15 are rejected under 35 U.S.C. 103 as being unpatentable over Zhang et al. (US 2023/0021056 A1; hereinafter “Zhang”).
Regarding claim 1, Zhang teaches a method for patterning an emission layer, comprising: sequentially forming a front film layer (305) and a sacrificial layer (303), which are stacked, on a substrate (301); wherein the front film layer is an electron transport layer or a hole transport layer (305 is an electron transport layer), one of the sacrificial layer and the front film layer is hydrophilic (305, which has 303 is formed thereon, is considered hydrophilic), and the other of the sacrificial layer and the front film layer is hydrophobic (303 formed of fluorene-based material having hydrophobic property) (Fig. 3 and paragraphs 61-62 and 83-90); forming a mask layer (306) having a through hole (3031a) on the sacrificial layer, wherein the through hole corresponds to a target region (3031a is a target region), and etching the sacrificial layer in the target region under the shielding of the mask layer (Fig. 3 and paragraphs 90-92); laying a quantum dot material (304) (Fig. 3 and paragraphs 73-75 and 93); and forming a patterned emission layer (304) in the target region by removing a remaining sacrificial layer (Fig. 3 and paragraph 94-95).
Zhang does not explicitly teach curing quantum dots in the target region. However, with Zhang teaching the step of coating the quantum dot layer (paragraph 73), it would have been obvious to one of ordinary skill in the art to recognize that a subsequent curing step is followed after coating the quantum dot layer in order to solidify the quantum dot layer for.
Regarding claim 2, Zhang teaches wherein the forming the mask layer having the through hole on the sacrificial layer specifically comprises: forming a photoresist on the sacrificial layer, patterning the photoresist, and removing the photoresist in the target region to form the mask layer having the through hole (Fig. 3 and paragraphs 63-66 and 89-90).
Regarding claim 3, Zhang teaches wherein the sequentially forming the front film layer and the sacrificial layer, which are stacked, on the substrate specifically comprises: forming the electron transport layer on the substrate; wherein the electron transport layer is the front film layer, and the electron transport layer is hydrophilic; and forming the sacrificial layer on a side, facing away from the substrate, of the electron transport layer; wherein the sacrificial layer is hydrophobic (Fig. 3 and see the rejection of claim 1 above).
Regarding claim 11, Zhang teaches wherein the removing the remaining sacrificial layer specifically comprises: removing the remaining sacrificial layer by solvent soaking or solvent rinsing (paragraphs 78-79 and 94, a lift-off processing).
Regarding claim 12, Zhang teaches wherein the patterning the photoresist, and removing the photoresist in the target region specifically comprises: shielding the photoresist with a mask, wherein the mask comprises a light-transmissive region and a light shielding region, wherein the light-transmissive region corresponds to a retained region to be irradiated by light in the photoresist, and the light shielding region corresponds to the target region; and removing the photoresist in the target region with a solvent (Fig. 3 and paragraphs 63-66 and 89-90).
Regarding claim 13, Zhang teaches wherein the etching the sacrificial layer in the target region under the shielding of the mask layer specifically comprises: etching away the sacrificial layer in the target region by using oxygen plasma (paragraph 92).
Regarding claim 15, Zhang teaches a material of the electron transport layer comprises ZnO, ZnMgO or ZnAlOx (paragraph 72).
Claims 1-3 and 15 are rejected under 35 U.S.C. 103 as being unpatentable over Mei et al. (US 2022/0310983 A1; hereinafter “Mei 983”).
Regarding claim 1, Mei 983 teaches a method for patterning an emission layer, comprising: sequentially forming a front film layer (103) and a sacrificial layer (104), which are stacked, on a substrate (101); wherein the front film layer is an electron transport layer or a hole transport layer (103 is an electron transport layer), one of the sacrificial layer and the front film layer is hydrophilic (190 formed of ZnO, which is the same material to that of the invention as recited in claim 15, is considered hydrophilic), and the other of the sacrificial layer and the front film layer is hydrophobic (171 formed of an alcohol-soluble polymer having hydrophobic property) (Figs. 2A-2D and paragraphs 55-72); forming a mask layer (1051) having a through hole (openings in 1051) on the sacrificial layer, wherein the through hole corresponds to a target region (openings in 1051 is a target region) (Figs. 2D-2E and paragraphs 72-76), and etching the sacrificial layer in the target region under the shielding of the mask layer (Figs. 2F and paragraphs 77-80); laying a quantum dot material (106), and curing quantum dots in the target region (Fig. 2G and paragraphs 81-88); and forming a patterned emission layer (106’) in the target region by removing a remaining sacrificial layer (Fig. 2H and paragraphs 89-101).
Mei 983 does not explicitly teach curing quantum dots in the target region. However, with Mei 983 teaching the step of coating the quantum dot solution and forming the quantum dot light-emitting material layer (Fig. 2G and paragraphs 81-88), it would have been obvious to one of ordinary skill in the art to recognize that a subsequent curing step is followed after coating the quantum dot solution in order to solidify the quantum dot solution for forming the quantum dot light-emitting layer.
Regarding claim 2, Mei 983 teaches wherein the forming the mask layer having the through hole on the sacrificial layer specifically comprises: forming a photoresist on the sacrificial layer, patterning the photoresist, and removing the photoresist in the target region to form the mask layer having the through hole (Figs. 2D-2E and paragraphs 72-76).
Regarding claim 3, Mei 983 teaches wherein the sequentially forming the front film layer and the sacrificial layer, which are stacked, on the substrate specifically comprises: forming the electron transport layer on the substrate; wherein the electron transport layer is the front film layer, and the electron transport layer is hydrophilic; and forming the sacrificial layer on a side, facing away from the substrate, of the electron transport layer; wherein the sacrificial layer is hydrophobic (Figs. 2A-2H and see the rejection of claim 1 above).
Regarding claim 15, Mei 983 teaches a material of the electron transport layer comprises ZnO, ZnMgO or ZnAlOx (paragraphs 60-62).
Claims 6-8 are rejected under 35 U.S.C. 103 as being unpatentable over Mei as applied to claim 3 above, and further in view of Lee et al. (KR 10-2011-0020703; hereinafter “Lee”).
Regarding claims 6-8, the teaching of Mei has been discussed above except the sacrificial layer comprises at least one of: polymethylsilsesquioxane, methacrylamidepolysilsesquioxane, polyphenylsilsesquioxane, polydimethylsiloxane, polyfluorosiloxane or polychlorosiloxane. Lee teaches a method for patterning a quantum dot layer, comprising: forming a sacrificial layer (15) on a substrate (11) (Fig. 1a and paragraphs 65-80), wherein the sacrificial layer is hydrophobic and comprises at least one of: polymethylsilsesquioxane, methacrylamidepolysilsesquioxane, polyphenylsilsesquioxane, polydimethylsiloxane, polyfluorosiloxane or polychlorosiloxane (15 formed of polydimethylsiloxane PDMS, which the identical material choice to that of claim 8 would include identical properties to that of claims 6-7) (Figs. 1a-1d and pages 25-27). Therefore, it would have been obvious to one of ordinary skill in the art to combine the teaching of Mei with that of Lee in order to form the sacrificial layer with readily available sacrificial material choice known in the art.
Regarding claim 9, Lee teaches wherein a backbone or a branched chain of the material of the sacrificial layer has a fluorine hydrophobic group of -F or -CF3 (pages 25-27, polystyrene PS).
Regarding claim 10, Lee and Lee teaches wherein the material of the sacrificial layer comprises at least one of: fluoropolystyrene or fluoropolyacrylate (pages 25-27, polystyrene PS).
Response to Arguments
Applicant’s arguments with respect to amended claims have been considered but are moot in view of new ground of rejection as set forth above in this Office Action.
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to DANIEL B WHALEN whose telephone number is (571)270-3418. The examiner can normally be reached on M-F: 8AM-5PM.
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Sue Purvis can be reached on (571)272-1236. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
/DANIEL WHALEN/Primary Examiner, Art Unit 2893