Prosecution Insights
Last updated: April 19, 2026
Application No. 18/124,592

ACOUSTIC WAVE DEVICE

Non-Final OA §102§103
Filed
Mar 22, 2023
Examiner
ROSENAU, DEREK JOHN
Art Unit
2837
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Murata Manufacturing Co. Ltd.
OA Round
1 (Non-Final)
77%
Grant Probability
Favorable
1-2
OA Rounds
3y 1m
To Grant
86%
With Interview

Examiner Intelligence

Grants 77% — above average
77%
Career Allow Rate
951 granted / 1229 resolved
+9.4% vs TC avg
Moderate +8% lift
Without
With
+8.2%
Interview Lift
resolved cases with interview
Typical timeline
3y 1m
Avg Prosecution
34 currently pending
Career history
1263
Total Applications
across all art units

Statute-Specific Performance

§103
50.8%
+10.8% vs TC avg
§102
29.3%
-10.7% vs TC avg
§112
17.1%
-22.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1229 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim 1 is rejected under 35 U.S.C. 102(a)(1) as being anticipated by Inoue et al. (US 2018/0159495). With respect to claim 1, Inoue et al. discloses an acoustic wave device (Fig 12) comprising: a silicon substrate (item 12, paragraph 31); a polysilicon layer provided on the silicon substrate (Fig 12, paragraph 54); a silicon oxide layer (item 102, paragraph 53) directly or indirectly provided on the polysilicon layer (Paragraph 54); a piezoelectric layer (item 14) directly or indirectly provided on the silicon oxide layer (Fig 12); and an interdigital transducer electrode (item 16) provided on the piezoelectric layer (Fig 12); wherein a plane orientation of the silicon substrate is any one of (100), (110), and (111) (Paragraph 31); and where a wave length that is defined by an electrode finger pitch of the interdigital transducer electrode is λ, a thickness of the piezoelectric layer is less than or equal to about 1λ (Paragraph 37). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 2, 3, and 22 are rejected under 35 U.S.C. 103 as being unpatentable over Inoue et al. in view of Gaudin et al. (US 2019/0372552). With respect to claim 2, Inoue et al. discloses the acoustic wave device according to claim 1. Inoue et al. does not disclose a silicon nitride layer provided between the silicon oxide layer and the piezoelectric layer. Gaudin et al. teaches a piezoelectric acoustic wave device including a silicon nitride layer (item 50) provided between the silicon oxide layer (item 40) and the piezoelectric layer (Fig 3, item 10; paragraphs 67 and 70). Before the effective filing, it would have been obvious to one of ordinary skill in the art to combine the silicon nitride layer of Gaudin et al. with the acoustic wave device of Inoue et al. for the benefit of reducing undesired acoustic reflections (Paragraphs 67-=71 of Gaudin et al.). With respect to claim 3, Inoue et al. discloses the acoustic wave device according to claim 1. Inoue et al. does not disclose a silicon nitride layer provided between the polysilicon layer and the silicon oxide layer. Gaudin et al. teaches a piezoelectric acoustic wave device including a silicon nitride layer (item 40) provided between the polysilicon layer (item 30, paragraph 56) and the silicon oxide layer (Fig 3, item 50) Before the effective filing, it would have been obvious to one of ordinary skill in the art to combine the silicon nitride layer of Gaudin et al. with the acoustic wave device of Inoue et al. for the benefit of reducing undesired acoustic reflections (Paragraphs 67-=71 of Gaudin et al.). With respect to claim 22, Inoue et al. discloses the acoustic wave device according to claim 1. Inoue et al. does not disclose that the piezoelectric layer is a lithium niobate layer. Gaudin et al. teaches a piezoelectric acoustic wave device in which the piezoelectric layer is a lithium niobate layer (Paragraph 54). Before the effective filing, it would have been obvious to one of ordinary skill in the art to combine the lithium niobate of Gaudin et al. with the acoustic wave device of Inoue et al. as it has been held that the selection of a material based on an art-recognized suitability for an intended purpose is obvious (In re Leshin, 125 USPQ 416). As lithium niobate is among the most commonly-used piezoelectric materials in acoustic wave devices, including as an alternative to the lithium tantalate of Inoue et al. (Gaudin discloses that either lithium tantalate or lithium niobate, among other materials, may be used as the piezoelectric material), it would have been obvious to use lithium niobate as the piezoelectric material of Inoue et al. Claim 4 is rejected under 35 U.S.C. 103 as being unpatentable over Inoue et al. in view of Shibata et al. (US 2020/0161533). With respect to claim 4, Inoue et al. discloses the acoustic wave device according to Claim 1. Inoue et al. does not disclose a titanium oxide layer provided between the silicon oxide layer and the piezoelectric layer. Shibata et al. teaches a piezoelectric device including a titanium oxide layer (item 6, paragraph 20) provided between the silicon oxide layer (item 1b) and the piezoelectric layer (item 3). Before the effective filing, it would have been obvious to one of ordinary skill in the art to combine the titanium oxide film of Shibata et al. with the acoustic wave device of Inoue et al. for the benefit of improving adhesion (Paragraph 20 of Shibata et al.). Allowable Subject Matter Claims 5-21 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: the prior art does not disclose or suggest the subject matter of claims 5-21 in combination with their respective parent claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to Derek John Rosenau whose telephone number is (571)272-8932. The examiner can normally be reached Monday-Thursday 7 am to 5:30 pm Central Time. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Dedei Hammond can be reached at (571) 270-7938. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DEREK J ROSENAU/Primary Examiner, Art Unit 2837
Read full office action

Prosecution Timeline

Mar 22, 2023
Application Filed
Mar 06, 2026
Non-Final Rejection — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12603629
COMPOSITE STRUCTURE AND ASSOCIATED PRODUCTION METHOD
2y 5m to grant Granted Apr 14, 2026
Patent 12597906
DOPED CRYSTALLINE PIEZOELECTRIC RESONATOR FILMS AND METHODS OF FORMING DOPED SINGLE CRYSTALLINE PIEZOELECTRIC RESONATOR LAYERS ON SUBSTRATES VIA EPITAXY
2y 5m to grant Granted Apr 07, 2026
Patent 12593611
RESERVOIR ELEMENT AND NEUROMORPHIC DEVICE
2y 5m to grant Granted Mar 31, 2026
Patent 12592676
RESONATOR
2y 5m to grant Granted Mar 31, 2026
Patent 12587162
ACOUSTIC WAVE DEVICE
2y 5m to grant Granted Mar 24, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

1-2
Expected OA Rounds
77%
Grant Probability
86%
With Interview (+8.2%)
3y 1m
Median Time to Grant
Low
PTA Risk
Based on 1229 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month