Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined
under the first inventor to file provisions of the AIA .
In the event the determination of the status of the application as subject to AIA 35
U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
Election/Restrictions
Applicant’s election without traverse of Group I (Claims 1-14 and 22) in the reply
filed on January 30, 2026 is acknowledged.
Claims 15-21 is withdrawn from further consideration pursuant to 37 CPR
1.142(b) as being drawn to nonelected inventions, there being no allowable generic or linking claim.
DETAILED ACTION
Drawings
The drawings are objected to under 37 CFR 1.83(a). The drawings must show
every feature of the invention specified in the claims. Therefore, the "the multilayer transduction structure further comprises a plurality of internal electrodes, which are alternated with the plurality of transduction layers” in Claim 13 must be shown or the feature(s) canceled from the claim(s). No new matter should be entered.
Corrected drawing sheets in compliance with 37 CFR 1.121(d) are required in reply to the Office action to avoid abandonment of the application. Any amended replacement drawing sheet should include all of the figures appearing on the immediate prior version of the sheet, even if only one figure is being amended. The figure or figure number of an amended drawing should not be labeled as “amended.” If a drawing figure is to be canceled, the appropriate figure must be removed from the replacement sheet, and where necessary, the remaining figures must be renumbered and appropriate changes made to the brief description of the several views of the drawings for consistency. Additional replacement sheets may be necessary to show the renumbering of the remaining figures. Each drawing sheet submitted after the filing date of an application must be labeled in the top margin as either “Replacement Sheet” or “New Sheet” pursuant to 37 CFR 1.121(d). If the changes are not accepted by the examiner, the applicant will be notified and informed of any required corrective action in the next Office action. The objection to the drawings will not be held in abeyance.
Specification
The specification has not been checked to the extent necessary to determine the
presence of all possible minor errors. The applicant's cooperation is requested in correcting any errors of which the applicant may become aware in the specification.
Claim Objections
Claims 1-2, 4, 11-12, and 22 are objected to because of the following
informalities:
Claim 1
lines 10-11, “the ferroelectric material” should be --the first ferroelectric material--
Claim 2
line 1, “the change” should be --a change--
Claim 4
line 2, “P-E curve” should be --polarization-electric field (P-E) curve--
Claims 11-12
line 1, “Brag” should be --Bragg--
Claim 22
line 15, “the ferroelectric material” should be --the first ferroelectric material--
Appropriate correction is required.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of AIA 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
Claims 1-14 and 22 are rejected under AIA 35 U.S.C. 102(a)(2) as being
anticipated by Burak et al. (U.S. Publication No. 20230170876; hereinafter “Burak”).
Regarding claim 1, Burak discloses a Bulk Acoustic Wave (BAW) resonator (Fig. 1A, 100) with tunable electromechanical coupling (Figs. 4H-I), comprising: a bottom electrode (Fig. 1A, 121); a top electrode (Fig. 1A, 137); and a multilayer transduction structure (Fig. 1A, 111/109/107/105/158) sandwiched (Fig. 1A) between (Fig. 1A) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), wherein: the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) is composed (Fig. 1A) of a plurality of transduction layers (Fig. 1A, 111/109/107/105/158); at least one of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158; [0087]; [0091]) is formed (Fig. 1A) of a first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”), whose polarization (Fig. 1A) will vary (Fig. 1A) with an electric field (Fig. 1A; [0156] – “The stress 173 is excited by the oscillating electric field applied via the top acoustic reflector 115 stack of the plurality of top metal electrode layers 137, 139, 141, 143, 145, 147, 149, 151, and the bottom acoustic reflector 113 stack of the plurality of bottom metal electrode layers 119, 121, 123, 125, 127, 129, 131, 133.”) across (Fig. 1A) the ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”); and upon adjusting a direct current (DC) bias voltage (Fig. 1A; [0132] – “…the first member of the first pair of top metal electrode layers 137,…, of the top acoustic reflector 115,…, may be different metals, and may have respective acoustic impedances that are different from one another so as to provide a reflective acoustic impedance mismatch at the resonant frequency (e.g., main resonant frequency).”; Examiner’s Note: In piezoelectric devices, a DC bias voltage alters the acoustic impedance.) across (Fig. 1A; [0132]) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), an overall polarization (Figs. 1D-E; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) and an overall electromechanical coupling coefficient (Figs. 4H-I; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) are capable (Figs. 1A/1D-E/4H-I; [0132]) of being changed (Figs. 1D-E; Figs. 4H-I; [0132]).
Regarding claim 2, Burak discloses the BAW resonator of claim 1 wherein once the change (Figs. 4H-I; [0132]) of the overall electromechanical coupling coefficient (Figs. 4H-I; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) is completed (Fig. 1A; Figs. 1D-E; Figs. 4H-I; [0132]; Examiner’s Note: The prior art discloses the overall electromechanical coupling coefficient change is completed by thickness and number of layer selection as well as tuning via DC bias voltage.), the overall electromechanical coupling coefficient (Figs. 4H-I) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) will remain unchanged (Fig. 1A; Examiner’s Note: The overall electromechanical coupling coefficient is changed by the change in layer thickness induced by the DC bias voltage. This change in thickness persists even after the DC bias voltage is removed because of residual, permanent deformation or remanent strain, that is, slow relaxation and induced polarization caused by the applied DC bias voltage.) after (Fig. 1A; [0132]) removing (Fig. 1A; [0132]) the DC bias voltage (Fig. 1A; [0132]).
Regarding claim 3, Burak discloses the BAW resonator of claim 1 wherein the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) used (Fig. 1A) to form (Fig. 1A) the at least one of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158; [0091] – “ScxAl1-xN”) has a box-shaped polarization-electric field (P-E) curve (Fig. 1A; [0091] – “ScxAl1-xN”; Examiner’s Note: The P-E curve for a ferroelectric is box-shaped.).
Regarding claim 4, Burak discloses the BAW resonator of claim 3 wherein the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) is scandium aluminum nitride (ScxAl1-xN) (Fig. 1A; [0091] – “ScxAl1-xN”) and the P-E curve (Fig. 1A; [0091]) of ScxAl1-N (Fig. 1A; [0091] – “ScxAl1-xN”) is dependent (Fig. 1A; [0091]) on a scandium concentration x (Fig. 1A; [0091]).
Regarding claim 5, Burak discloses the BAW resonator of claim 4 wherein at least one of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158; [0087]; [0091]) is formed (Fig. 1A) of a second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate), which has a different P-E curve (Fig. 1A; [0087] – “Lithium Niobate”; Examiner’s Note: The P-E curve for SCALN is different from the P-E curve of Lithium Niobate.) compared to (Fig. 1A; [0087]; [0091]) the first ferroelectric material (Fig. 1A; [0087]; [0091] – “ScxAl1-xN”).
Regarding claim 6, Burak discloses the BAW resonator of claim 5 wherein at least one of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) is formed (Fig. 1A) of a piezoelectric material (Fig. 1A, 111/109/107/105/158; [0087] – “ZnO”), whose polarization does not vary with an electric field (Fig. 1A; Examiner’s Note: The piezoelectric ZnO has a strong covalent bond preventing polarization switching.) across the piezoelectric material (Fig. 1A, 111/109/107/105/158; [0087] – “ZnO”).
Regarding claim 7, Burak discloses the BAW resonator of claim 1 wherein each of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) is formed (Fig. 1A) of a different ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “ScxAl1-xN”).
Regarding claim 8, Burak discloses the BAW resonator of claim 1 wherein at least one of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) is formed of a piezoelectric material (Fig. 1A, 111/109/107/105/158; [0087] – “ZnO”), whose polarization does not vary with an electric field (Fig. 1A; Examiner’s Note: The piezoelectric ZnO has a strong covalent bond preventing polarization switching.) across the piezoelectric material (Fig. 1A, 111/109/107/105/158; [0087] – “ZnO”).
Regarding claim 9, Burak discloses the BAW resonator of claim 1 wherein each of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) has a different thickness (Figs. 1A/1D-E/4H-I; [Abstract]; [0068]).
Regarding claim 10, Burak discloses the BAW resonator of claim 1 wherein each of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) has a same thickness (Fig. 1A; [0175] – “In bulk acoustic SHF or EHF wave resonator 2001A, respective layer thicknesses of the four piezoelectric layer stack may be substantially equal.”).
Regarding claim 11, Burak discloses the BAW resonator of claim 1 further comprising a bottom Brag reflector (Fig. 1A, 113; [0121]) formed underneath (Fig. 1A) the bottom electrode (Fig. 1A, 121).
Regarding claim 12, Burak discloses the BAW resonator of claim 11 further comprising a top Brag reflector (Fig. 1A, 115; [0132]) formed over (Fig. 1A) the top electrode (Fig. 1A, 137).
Regarding claim 13, Burak discloses the BAW resonator of claim 1 wherein the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) further comprises (Fig. 1A) a plurality of internal electrodes (Fig. 1A, 163/161/159), which are alternated (Fig. 1A) with the plurality of transduction layers (Fig. 1A, 111/109/107/105/158).
Regarding claim 14, Burak discloses the BAW resonator of claim 13 wherein each of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) is formed (Fig. 1A) of a different ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “ScxAl1-xN”).
Regarding claim 22, Burak discloses a system, comprising: a radio-frequency (RF) input circuitry (Figs. 1A/11; Fig. 11, 9515N input circuitry); a RF output circuitry (Figs. 1A/11A; Fig. 11A, 9515N output circuitry); and a filter circuitry (Figs. 1A/11A; Fig. 11, 9112J/9114J/9116J/9118J), which includes at least one Bulk Acoustic Wave (BAW) resonator (Figs. 1A/11; Fig. 1A, 100; Fig. 11, 9112J/9114J/9116J/9118J; [0433]), connected between (Fig. 11) the RF input circuitry (Figs. 1A/11; Fig. 11, 9515N input circuitry) and the RF output circuitry (Figs. 1A/11; Fig. 11, 9515N output circuitry), wherein the at least one BAW resonator (Figs. 1A/11; Fig. 1A, 100; Fig. 11, 9112J/9114J/9116J/9118J; [0433]) comprises: a bottom electrode (Fig. 1A, 121); a top electrode (Fig. 1A, 137); and a multilayer transduction structure (Fig. 1A, 111/109/107/105/158) sandwiched (Fig. 1A) between (Fig. 1A) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), wherein: the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) is composed (Fig. 1A) of a plurality of transduction layers (Fig. 1A, 111/109/107/105/158); at least one of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) is formed (Fig. 1A) of a first ferroelectric material (Fig. 1A; [0087]; [0091]), whose polarization (Fig. 1A) will vary (Fig. 1A) with an electric field (Fig. 1A; [0156] – “The stress 173 is excited by the oscillating electric field applied via the top acoustic reflector 115 stack of the plurality of top metal electrode layers 137, 139, 141, 143, 145, 147, 149, 151, and the bottom acoustic reflector 113 stack of the plurality of bottom metal electrode layers 119, 121, 123, 125, 127, 129, 131, 133.”) across (Fig. 1A) the ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”); and upon adjusting (Fig. 1A; [0132]) a direct current (DC) bias voltage (Fig. 1A; [0132] – “…the first member of the first pair of top metal electrode layers 137,…, of the top acoustic reflector 115,…, may be different metals, and may have respective acoustic impedances that are different from one another so as to provide a reflective acoustic impedance mismatch at the resonant frequency (e.g., main resonant frequency).”; Examiner’s Note: In piezoelectric devices, an DC bias voltage alters the acoustic impedance.) across (Fig. 1A; [0132]) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), an overall polarization (Figs. 1D-E; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) and an overall electromechanical coupling coefficient (Figs. 4H-I; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) are capable (Figs. 1A/1D-E/4H-I; [0132]) of being changed (Figs. 1D-E; Figs. 4H-I; [0132]).
Conclusion
Any inquiry concerning this communication should be directed to MONICA MATA
whose telephone number is (571) 272-8782. The examiner can normally be reached on Monday thru Friday from 7:30 AM to 5:00 PM.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s
supervisor, Dedei Hammond, can be reached on (571) 270-7938. The fax phone number for the organization where this application or proceeding is assigned is (571) 273-8300.
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/MONICA MATA/
Patent Examiner, Art Unit 2837
27 February 2026
/EMILY P PHAM/Primary Examiner, Art Unit 2837