Response After Non-Final
This Office action is in response to the amendment filed on 6/3/2026.
Claims 1-4 and 7-22 are pending in the application.
Claims 1-4, 7-14, and 22 are rejected.
Claims 1-3, 11-13, and 22 are currently amended.
Claims 15-21 are withdrawn.
Claims 5-6 are canceled.
In the event the determination of the status of the application as subject to AIA 35
U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
Response to Arguments
The applicant's arguments filed June 3, 2026 have been fully considered
and are respectfully found persuasive in part and unpersuasive in part.
The applicant argues the following:
[1] Drawing and claim objections have been addressed and should be withdrawn.
[2] Prior art of record fails to teach “at least two adjacent transduction layers of the plurality of transduction layers are formed of a first ferroelectric material and a second ferroelectric material, respectively, wherein the first ferroelectric material differs from the second ferroelectric material, a polarization of the first ferroelectric material is variable in response to an electric field across the first ferroelectric material, and a polarization of the second ferroelectric material is variable in response to an electric field across the second ferroelectric material” in Claim 1.
[3] Prior matching fails to address newly admitted limitations in Claim 13.
Regarding [1], the examiner respectfully agrees and the drawing and claim objections raised in the most recent office action are hereby withdrawn.
Regarding [2], the examiner respectfully disagrees because the prior art of record discloses the claim language at issue. First, the prior art of record discloses two adjacent layers formed of two different ferroelectric materials. In Figure 1A, layer 158 is formed of a ferroelectric material (See Paragraph [0091] – “Alternatively or additionally the first polarizing layer (e.g., first polarizing layer 158, 458A through 458G, e.g., first polarizing seed layer 158, 458A through 458G) may comprise a ferroelectric…”). Second, in Figure 1A, layer 105 can be either Lithium Tantalate or Lithium Niobate (See Paragraph [0087]), both of which are ferroelectrics. Hence, whether 158 and 161 are adjacent, whether the layers serve as seed layers, and whether an arrangement contrary to the prior art of record is proposed are irrelevant and the remarks incorrectly allege that the prior art of record fails to teach two adjacent layers formed of distinct ferroelectric materials.
Regarding [3], the examiner respectfully agrees that the amendment has changed the claim language and scope and has amended the matching accordingly.
DETAILED ACTION
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of AIA 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
Claims 1-14 and 22 are rejected under AIA 35 U.S.C. 102(a)(2) as being
anticipated by Burak et al. (U.S. Publication No. 20230170876; hereinafter “Burak”).
Regarding claim 1, Burak discloses a Bulk Acoustic Wave (BAW) resonator (Fig. 1A, 100) with tunable electromechanical coupling (Figs. 4H-I), comprising: a bottom electrode (Fig. 1A, 121); a top electrode (Fig. 1A, 137); and a multilayer transduction structure (Fig. 1A, 111/109/107/105/158) sandwiched (Fig. 1A) between (Fig. 1A) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), wherein: the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) is composed (Fig. 1A) of a plurality of transduction layers (Fig. 1A, 111/109/107/105/158); at least two adjacent transconduction layers (Fig. 1A, 158 & 105; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “Alternatively or additionally the first polarizing layer (e.g., first polarizing layer 158, 458A through 458G, e.g., first polarizing seed layer 158, 458A through 458G) may comprise a ferroelectric…ScxAl1-xN…”) of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158; [0087]; [0091]) are formed (Fig. 1A) of a first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) and a second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”), respectively, wherein the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) differs (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “ScxAl1-xN”) from the second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”), a polarization (Fig. 1A) of the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) is variable (Fig. 1A) in response (Fig. 1A) to an electric field (Fig. 1A; [0156] – “The stress 173 is excited by the oscillating electric field applied via the top acoustic reflector 115 stack of the plurality of top metal electrode layers 137, 139, 141, 143, 145, 147, 149, 151, and the bottom acoustic reflector 113 stack of the plurality of bottom metal electrode layers 119, 121, 123, 125, 127, 129, 131, 133.”) across (Fig. 1A) the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”), and a polarization (Fig. 1A) of the second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”) is variable (Fig. 1A) in response (Fig. 1A) to an electric field (Fig. 1A; [0156] – “The stress 173 is excited by the oscillating electric field applied via the top acoustic reflector 115 stack of the plurality of top metal electrode layers 137, 139, 141, 143, 145, 147, 149, 151, and the bottom acoustic reflector 113 stack of the plurality of bottom metal electrode layers 119, 121, 123, 125, 127, 129, 131, 133.”) across the second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”); and upon adjusting a direct current (DC) bias voltage (Fig. 1A; [0132] – “…the first member of the first pair of top metal electrode layers 137,…, of the top acoustic reflector 115,…, may be different metals, and may have respective acoustic impedances that are different from one another so as to provide a reflective acoustic impedance mismatch at the resonant frequency (e.g., main resonant frequency).”; Examiner’s Note: In piezoelectric devices, a DC bias voltage alters the acoustic impedance.) across (Fig. 1A; [0132]) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), an overall polarization (Figs. 1D-E; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) and an overall electromechanical coupling coefficient (Figs. 4H-I; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) are capable (Figs. 1A/1D-E/4H-I; [0132]) of being changed (Figs. 1D-E; Figs. 4H-I; [0132]).
Regarding claim 2, Burak discloses the BAW resonator of claim 1 wherein once a change (Figs. 4H-I; [0132]) of the overall electromechanical coupling coefficient (Figs. 4H-I; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) is completed (Fig. 1A; Figs. 1D-E; Figs. 4H-I; [0132]; Examiner’s Note: The prior art discloses the overall electromechanical coupling coefficient change is completed by thickness and number of layer selection as well as tuning via DC bias voltage.), the overall electromechanical coupling coefficient (Figs. 4H-I) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) will remain unchanged (Fig. 1A; Examiner’s Note: The overall electromechanical coupling coefficient is changed by the change in layer thickness induced by the DC bias voltage. This change in thickness persists even after the DC bias voltage is removed because of residual, permanent deformation or remanent strain, that is, slow relaxation and induced polarization caused by the applied DC bias voltage.) after (Fig. 1A; [0132]) removing (Fig. 1A; [0132]) the DC bias voltage (Fig. 1A; [0132]).
Regarding claim 3, Burak discloses the BAW resonator of claim 1 wherein the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) the second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”) have different (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “ScxAl1-xN”) box-shaped polarization-electric field (P-E) curves (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”); [0091] – “ScxAl1-xN”; Examiner’s Note: The P-E curve for a ferroelectric is box-shaped. Different materials have different box-shaped polarization-electric field (P-E) curves).
Regarding claim 4, Burak discloses the BAW resonator of claim 3 wherein the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) is scandium aluminum nitride (ScxAl1-xN) (Fig. 1A; [0091] – “ScxAl1-xN”) and the P-E curve (Fig. 1A; [0091]) of ScxAl1-N (Fig. 1A; [0091] – “ScxAl1-xN”) is dependent (Fig. 1A; [0091]) on a scandium concentration x (Fig. 1A; [0091]).
Regarding claim 7, Burak discloses the BAW resonator of claim 1 wherein each of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) is formed (Fig. 1A) of a different ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “ScxAl1-xN”).
Regarding claim 8, Burak discloses the BAW resonator of claim 1 wherein at least one of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) is formed of a piezoelectric material (Fig. 1A, 111/109/107/105/158; [0087] – “ZnO”), whose polarization does not vary with an electric field (Fig. 1A; Examiner’s Note: The piezoelectric ZnO has a strong covalent bond preventing polarization switching.) across the piezoelectric material (Fig. 1A, 111/109/107/105/158; [0087] – “ZnO”).
Regarding claim 9, Burak discloses the BAW resonator of claim 1 wherein each of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) has a different thickness (Figs. 1A/1D-E/4H-I; [Abstract]; [0068]).
Regarding claim 10, Burak discloses the BAW resonator of claim 1 wherein each of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) has a same thickness (Fig. 1A; [0175] – “In bulk acoustic SHF or EHF wave resonator 2001A, respective layer thicknesses of the four piezoelectric layer stack may be substantially equal.”).
Regarding claim 11, Burak discloses the BAW resonator of claim 1 further comprising a bottom Bragg reflector (Fig. 1A, 113; [0121]) formed underneath (Fig. 1A) the bottom electrode (Fig. 1A, 121).
Regarding claim 12, Burak discloses the BAW resonator of claim 11 further comprising a top Bragg reflector (Fig. 1A, 115; [0132]) formed over (Fig. 1A) the top electrode (Fig. 1A, 137).
Regarding claim 13, Burak discloses a Bulk Acoustic Wave (BAW) resonator (Fig. 1A, 100) with tunable electromechanical coupling (Figs. 4H-I), comprising: a bottom electrode (Fig. 1A, 121); a top electrode (Fig. 1A, 137); and a multilayer transduction structure (Fig. 1A, 111/109/107/105/158) sandwiched (Fig. 1A) between (Fig. 1A) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), wherein: the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) is composed (Fig. 1A) of a plurality of transduction layers (Fig. 1A, 111/109/107/105/158) and a plurality of internal electrodes (Fig. 1A, 135 & 159), that are alternated (Fig. 1A) with the plurality of transduction layers (Fig. 1A, 111/109/107/105/158); the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) is formed of one or more ferroelectric materials (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “ScxAl1-xN”), whose polarization (Fig. 1A) will vary (Fig. 1A) with an electric field (Fig. 1A; [0156] – “The stress 173 is excited by the oscillating electric field applied via the top acoustic reflector 115 stack of the plurality of top metal electrode layers 137, 139, 141, 143, 145, 147, 149, 151, and the bottom acoustic reflector 113 stack of the plurality of bottom metal electrode layers 119, 121, 123, 125, 127, 129, 131, 133.”) across the one or more ferroelectric materials (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “ScxAl1-xN”); each of the plurality of internal electrodes (Fig. 1A, 135 & 159) comprises at least tungsten (Fig. 1A; [0094]; [0128]) or aluminum copper; and upon adjusting (Fig. 1A; [0132]) a direct current (DC) bias voltage (Fig. 1A; [0132] – “…the first member of the first pair of top metal electrode layers 137,…, of the top acoustic reflector 115,…, may be different metals, and may have respective acoustic impedances that are different from one another so as to provide a reflective acoustic impedance mismatch at the resonant frequency (e.g., main resonant frequency).”; Examiner’s Note: In piezoelectric devices, an DC bias voltage alters the acoustic impedance.) across (Fig. 1A; [0132]) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), an overall polarization (Figs. 1D-E; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) and an overall electromechanical coupling coefficient (Figs. 4H-I; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) are capable (Figs. 1A/1D-E/4H-I; [0132]) of being changed (Figs. 1D-E; Figs. 4H-I; [0132]).
Regarding claim 14, Burak discloses the BAW resonator of claim 13 wherein each of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158) is formed (Fig. 1A) of a different ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “ScxAl1-xN”).
Regarding claim 22, Burak discloses a system, comprising: a radio-frequency (RF) input circuitry (Figs. 1A/11; Fig. 11, 9515N input circuitry); a RF output circuitry (Figs. 1A/11A; Fig. 11A, 9515N output circuitry); and a filter circuitry (Figs. 1A/11A; Fig. 11, 9112J/9114J/9116J/9118J), which includes at least one Bulk Acoustic Wave (BAW) resonator (Figs. 1A/11; Fig. 1A, 100; Fig. 11, 9112J/9114J/9116J/9118J; [0433]), connected between (Fig. 11) the RF input circuitry (Figs. 1A/11; Fig. 11, 9515N input circuitry) and the RF output circuitry (Figs. 1A/11; Fig. 11, 9515N output circuitry), wherein the at least one BAW resonator (Figs. 1A/11; Fig. 1A, 100; Fig. 11, 9112J/9114J/9116J/9118J; [0433]) comprises: a bottom electrode (Fig. 1A, 121); a top electrode (Fig. 1A, 137); and a multilayer transduction structure (Fig. 1A, 111/109/107/105/158) sandwiched (Fig. 1A) between (Fig. 1A) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), wherein: the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) is composed (Fig. 1A) of a plurality of transduction layers (Fig. 1A, 111/109/107/105/158); at least two adjacent transconduction layers (Fig. 1A, 158 & 105; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “Alternatively or additionally the first polarizing layer (e.g., first polarizing layer 158, 458A through 458G, e.g., first polarizing seed layer 158, 458A through 458G) may comprise a ferroelectric…ScxAl1-xN…”) of the plurality of transduction layers (Fig. 1A, 111/109/107/105/158; [0087]; [0091]) are formed (Fig. 1A) of a first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) and a second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”), respectively, wherein the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) differs (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”; [0091] – “ScxAl1-xN”) from the second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”), a polarization (Fig. 1A) of the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”) is variable (Fig. 1A) in response (Fig. 1A) to an electric field (Fig. 1A; [0156] – “The stress 173 is excited by the oscillating electric field applied via the top acoustic reflector 115 stack of the plurality of top metal electrode layers 137, 139, 141, 143, 145, 147, 149, 151, and the bottom acoustic reflector 113 stack of the plurality of bottom metal electrode layers 119, 121, 123, 125, 127, 129, 131, 133.”) across (Fig. 1A) the first ferroelectric material (Fig. 1A; [0091] – “ScxAl1-xN”), and a polarization (Fig. 1A) of the second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”) is variable (Fig. 1A) in response (Fig. 1A) to an electric field (Fig. 1A; [0156] – “The stress 173 is excited by the oscillating electric field applied via the top acoustic reflector 115 stack of the plurality of top metal electrode layers 137, 139, 141, 143, 145, 147, 149, 151, and the bottom acoustic reflector 113 stack of the plurality of bottom metal electrode layers 119, 121, 123, 125, 127, 129, 131, 133.”) across the second ferroelectric material (Fig. 1A; [0087] – “Lithium Niobate…Lithium Tantalate”); and upon adjusting (Fig. 1A; [0132]) a direct current (DC) bias voltage (Fig. 1A; [0132] – “…the first member of the first pair of top metal electrode layers 137,…, of the top acoustic reflector 115,…, may be different metals, and may have respective acoustic impedances that are different from one another so as to provide a reflective acoustic impedance mismatch at the resonant frequency (e.g., main resonant frequency).”; Examiner’s Note: In piezoelectric devices, an DC bias voltage alters the acoustic impedance.) across (Fig. 1A; [0132]) the bottom electrode (Fig. 1A, 121) and the top electrode (Fig. 1A, 137), an overall polarization (Figs. 1D-E; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) and an overall electromechanical coupling coefficient (Figs. 4H-I; [0132]) of the multilayer transduction structure (Fig. 1A, 111/109/107/105/158) are capable (Figs. 1A/1D-E/4H-I; [0132]) of being changed (Figs. 1D-E; Figs. 4H-I; [0132]).
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in
this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any extension fee pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the date of this final action.
Any inquiry concerning this communication should be directed to MONICA MATA
whose telephone number is (571) 272-8782. The examiner can normally be reached on Monday thru Friday from 7:30 AM to 5:00 PM.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s
supervisor, Dedei Hammond, can be reached on (571) 270-7938. The fax phone number for the organization where this application or proceeding is assigned is (571) 273-8300.
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/MONICA MATA/
Patent Examiner, Art Unit 2837
5 August 2026
/EMILY P PHAM/Primary Examiner, Art Unit 2837
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