Prosecution Insights
Last updated: October 27, 2026
Application No. 18/163,802

PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR DEVICE

Non-Final OA §102§103
Filed
Feb 02, 2023
Priority
Jun 01, 2022 — CN 202210619084.1 +1 more
Examiner
RAMOS-DIAZ, FERNANDO JOSE
Art Unit
2814
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Changxin Memory Technologies Inc.
OA Round
3 (Non-Final)
80%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
89%
With Interview

Examiner Intelligence

Grants 80% — above average
80%
Career Allowance Rate
16 granted / 20 resolved
+12.0% vs TC avg
Moderate +9% lift
Without
With
+8.8%
Interview Lift
resolved cases with interview
Typical timeline
3y 4m
Avg Prosecution
33 currently pending
Career history
66
Total Applications
across all art units

Statute-Specific Performance

§103
45.7%
+5.7% vs TC avg
§102
36.3%
-3.7% vs TC avg
§112
18.0%
-22.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 20 resolved cases

Office Action

§102 §103
DETAILED ACTION/EXAMINER’S COMMENT This Office action responds to the amendments filed on 07/25/2026. Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for a rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Amendment Status Applicant’s response filed on 07/25/2026 in reply to the final rejection mailed on 06/02/2026, has been entered. The present Office action is made with all previously suggested amendments being fully considered. Accordingly, pending in this Office action are claims 1-7. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 1-7 are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Park (US 20170011976) as evidenced Gangoso (US 20090045827). Park (see, e.g., para.0134) states the embodiment of fig. 9 is similar to the embodiment of figs. 7-8 with the exception of the arrangement and connections shown in the top view. Certain elements will be referenced from both the top view embodiment of fig. 9 and the cross-sectional view embodiment of figs. 7-8 and are interchangeable with one another. Regarding Claim 1, Park (see, fig. 7, fig. 8, fig. 9) shows a package structure, comprising: an isolation layer 250 (see, e.g., para.0122) having a plurality of via holes 252 (see, e.g., para.0122), wherein the isolation layer covers a surface of an interconnect layer 220 & 245a (see, e.g., para.0119), the via holes expose parts of the interconnect layer (see, e.g., fig. 8), and the interconnect layer is disposed on a surface of a semiconductor functional structure 210 (see, e.g., para.0115); N first pads 320b (interchangeable with 220, see, e.g., para.0120, para.0139), wherein each of the N first pads is formed by the interconnect layer exposed by one of the via holes (220 of the interconnect layer in holes 252, see, e.g., fig. 7), the N is a positive integer greater than 1; N redistribution layers 230 (interchangeable with 330, see, e.g., para.0122, para.0135), wherein each N redistribution layer covers the isolation layer and is electrically connected with a corresponding one of the N first pads (see, e.g., para.0128), some of the N first pads are arranged side by side along a first direction (y direction) near a first edge of the semiconductor functional structure (see, e.g., annotated figure 1), other of the N first pads are arranged side by side along the first direction near a second edge of the semiconductor functional structure (see, e.g., annotated figure 1), the first edge and the second edge are two opposite edges of the semiconductor functional structure; a first insulating layer 255 (see, e.g., para.0123) covering the N redistribution layers and exposing parts of each of the N redistribution layers; and second pads 260 (interchangeable with 360b) and third pads 270 (interchangeable with 370), wherein the exposed parts of each of the N redistribution layers form one of the second pads and one of the third pads (see, e.g., para.0124), a center point of each of the second pads 360b is offset from a center point of the corresponding each of the first pads 320b in a same direction (x direction) and by a same distance (see, e.g., fig. 9, annotated figure 2), a relative position between one of the second pads 360b and one of the third pads 370 for some of the N redistribution layers is different from a relative position between one of the second pads and one of the third pads for other N redistribution layers (see, fig. 9, e.g., annotated figure 2); the first pads and the second pads are used for a same set of probe cards testing (use for testing is known, see, e.g., para.0124) the semiconductor functional structure at different operating speeds, and the third pads are used for leading out bonding wires (pad for connection, see, e.g., para.0135) PNG media_image1.png 619 1047 media_image1.png Greyscale PNG media_image2.png 615 1043 media_image2.png Greyscale Regarding the limitation the first pads and second pads are used for a same set of probe cards testing the semiconductor functional structure at different operating speeds, Kim discloses pads used for testing a semiconductor functional structure is a known function. Further, as evidenced by Gangoso (see, e.g., fig. 1, fig. 6, para.0037-0038) testing the different operating speeds of a semiconductor function structure 20. The function for the pads is known in the art, and the parameters of testing do not change the structure of the first pads and the second pads. Therefore, Park, as evidenced by Gangoso, anticipates the claim. Regarding Claim 2, Park, as evidenced by Gangoso, shows the package structure of claim 1, wherein the second pad 360b and the third pad 370 comprised in each of the N redistribution layers are arranged side by side along a second direction (x direction, see, e.g., annotated figure 3), the second direction is perpendicular to the first direction (see, e.g., annotated figure 3). PNG media_image3.png 615 982 media_image3.png Greyscale Regarding Claim 3, Park, as evidenced by Gangoso, shows the package structure of claim 2, wherein an orthographic projection of a center point of the second pad 360b on a plane where the interconnect layer is located is offset by a first distance (see, e.g., annotated figure 4) along the second direction (x direction) with respect to the center point of the corresponding one of the N first pad 320b. PNG media_image4.png 615 950 media_image4.png Greyscale Regarding Claim 4, Park, as evidenced by Gangoso, shows the package structure of claim 3, wherein an orthographic projection of each of the N redistribution layers 330 (230) on the plane where the interconnect layer is located is of a strip shape (the geometrical shape of 330 is considered a strip since the limitation is broad, see, e.g., fig. 9). Regarding Claim 5, Park, as evidenced by Gangoso, shows the package structure of claim 4, wherein first ends of the some of the N first pads 220 (320b) near the first edge and second ends of the some of the N redistribution layers 230 (330) near the first edge are substantially flush along a third direction (z direction, see, e.g., annotated figure 5) perpendicular to both the first direction and the second direction; and wherein third ends of the other N first pads near the second edge and fourth ends of the other N redistribution layers near the second edge are substantially flush along the third direction. PNG media_image5.png 618 1518 media_image5.png Greyscale Regarding Claim 6, Park (see, e.g., annotated figure 6), as evidenced by Gangoso, shows the package structure of claim 5, wherein in the some of the N redistribution layers, the second pads 260 (360b) are located near the second ends (of 230/330) and the third pads 270 (370) are located away from the second ends (of 230/330); and wherein in the other N redistribution layers, the second pads 260 (360b) are located near the fourth ends (of 230/330) and the third pads 270 (370) are located away from the fourth ends (of 230/330). Regarding the limitation, “located away,” under broadest reasonable interpretation Examiner interprets located away as any location that isn’t the same location. Regarding the limitation, “located near,” under broadest reasonable interpretation Examiner interprets located near in proximity to the desired location. The current claim language is broad and the position of the second and third pads are interpreted as such. PNG media_image6.png 567 916 media_image6.png Greyscale Regarding Claim 7, Park (see, e.g., fig. 9), as evidenced by Gangoso, shows the package structure of claim 6, wherein the each N redistribution layer 230 (330) further comprises a first region 231 (directly above 220/320b) for conductively connecting with the corresponding one of the first pads (see, e.g., para.0121); and wherein in the some of the N redistribution layers, the second pads 360b (260) and the third pads 370 (270) are located at one side (right side) of first regions (see, e.g., fig. 9); and in the other N redistribution layers, the second pads and the third pads respectively located at two sides (left and right side) of the first regions (see, e.g., fig. 9). Response to Arguments Applicant’s arguments, see pages 7-8, filed 07/25/2026, with respect to the rejections of claims 1-7 under 35 U.S.C. 103 have been considered but they are not persuasive. Regarding Claim 1, the amended limitation “the first pads and the second pads are used for a same set of probe cards testing the semiconductor functional structure at different operating speeds” does not further claim subject matter for the package structure of Claim 1. Applicant argues using a same set of probe cards can reduce manufacturing costs, which is understood, but whether a same set of probe cards or different sets of probe cards are used, the structure of the package structure of Claim 1 remains the same. The testing parameters are different than the device itself. Gangoso, as evidence, showing the function of the first pads and the second pads for probe cards, testing speed, still anticipates the claim. The amended limitation does not overcome the rejection. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to FERNANDO JOSE RAMOS-DIAZ whose telephone number is (571) 270-5855. The examiner can normally be reached Mon-Fri 8am-5pm. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Loke can be reached on 571-272-1657. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /FERNANDO JOSE RAMOS-DIAZ/Examiner, Art Unit 2818 /STEVEN H LOKE/Supervisory Patent Examiner, Art Unit 2818
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Prosecution Timeline

Feb 02, 2023
Application Filed
Nov 26, 2025
Non-Final Rejection mailed — §102, §103
Feb 10, 2026
Response Filed
Jun 02, 2026
Final Rejection mailed — §102, §103
Jul 25, 2026
Response after Non-Final Action
Sep 01, 2026
Request for Continued Examination
Sep 05, 2026
Response after Non-Final Action
Oct 05, 2026
Non-Final Rejection mailed — §102, §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
80%
Grant Probability
89%
With Interview (+8.8%)
3y 4m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 20 resolved cases by this examiner. Grant probability derived from career allowance rate.

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