Prosecution Insights
Last updated: April 19, 2026
Application No. 18/180,204

WAFER PLACEMENT TABLE

Non-Final OA §103
Filed
Mar 08, 2023
Examiner
BACHNER, ROBERT G
Art Unit
2898
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
NGK Insulators Ltd.
OA Round
1 (Non-Final)
88%
Grant Probability
Favorable
1-2
OA Rounds
2y 6m
To Grant
94%
With Interview

Examiner Intelligence

Grants 88% — above average
88%
Career Allow Rate
737 granted / 838 resolved
+19.9% vs TC avg
Moderate +6% lift
Without
With
+6.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
32 currently pending
Career history
870
Total Applications
across all art units

Statute-Specific Performance

§101
4.7%
-35.3% vs TC avg
§103
53.3%
+13.3% vs TC avg
§102
18.7%
-21.3% vs TC avg
§112
14.9%
-25.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 838 resolved cases

Office Action

§103
18/180,204 DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-5 are rejected under 35 U.S.C. 103 as being unpatentable over Takebayashi (U.S. Patent Application Publication No. 2017/0280509). Regarding claim 1. Takebayashi discloses Figs. 1 and 2: A wafer placement table comprising: a ceramic base (26)having a wafer placement surface(W); resistance heating elements(34) buried in the ceramic base(34 in 26); jumper layers(36) having a planar shape and provided in a different layer from the resistance heating elements(36 having planar shape and different layer from 34); an inner via(35) connecting the jumper layer and an end of the resistance heating element; ([0029] disclosing that jumper provides power to electrodes 34 through vias 35)and a feed via(41) connected to the jumper layer, wherein each of the resistance heating elements is provided for each of zones of a surface parallel to the wafer placement surface(resistance heating elements shown in fig. 2, as 34 being provided for each radial zone Z1.), each of the jumper layers is provided for each of the resistance heating elements(36 is provided for each 34 as shown in fig. 2), and Takebayashi does not discloses: a center-to-center distance between the inner via and the feed via in each of the jumper layers is greater than or equal to 50 mm. However, the recited feature is a mere change in size of the working parts. Here the claimed size would not perform differently from the device of Takebayashi, as such, the features would have been obvious to one having ordinary skill In the art prior to the effective filing date of this application. See MPEP 2144.04(IV)(A). Regarding claim 2. Takebayashi discloses The wafer placement table according to claim 1, further comprising a high-resistance section in each of the jumper layers at a position between the inner via and the feed via to block a shortest route between the inner via and the feed via. ([0038] and [0050], jumper layer 36 having conductor 36 and therebetween insulator. The insulator being the high resistance that blocks shorts between areas of conductor 36.[0029], second electrode area has conductor and surrounding conductor is higher resistance) Regarding claim 3. Takebayashi discloses The wafer placement table according to claim 2, wherein the high-resistance section is a slit in each of the jumper layers. ([0038] and [0050], jumper layer 36 having conductor 36 and therebetween insulator. The insulator being the high resistance that blocks shorts.[0029], second electrode area has conductor and surrounding conductor is higher resistance. 36 cut in slits as shown in fig. 2) Further, the recited features is a mere change in shape of the working parts of Takebayashi. Here there is no persuasive evidence that the particular configuration of the claimed shape is significant especially in view of the large space between vias claimed. It would have been obvious to one having ordinary skill in the prior to the effective filing date of this application for the obvious benefit of providing a stage to heat a wafer having a desired shape, by providing the vias and jumper wires in the recited locations and configurations, and to provide insulation between vias. As such, the features of claim 3 would have been obvious to one having ordinary skill in the art. See MPEP 2144.04(A)(B) Regarding claim 4. Takebayashi discloses all of the features of claim 2 Takebayashi does not disclose: The wafer placement table according to claim 2, wherein the high-resistance section intersects two tangent lines that are tangent to each of an outline of the inner via and an outline of the feed via However, the recited features is a mere change in shape of the working parts of Takebayashi. Here there is no persuasive evidence that the particular configuration of the claimed shape is significant. IT would have been obvious to one having ordinary skill in the prior to the effective filing date of this application for the obvious benefit of providing a stage to heat a wafer having a desired shape. As such, the features of claim 4 would have been obvious to one having ordinary skill in the art. See MPEP 2144.04(A)(B) Regarding claim 5. Takebayashi discloses . ([0038] and [0050], jumper layer 36 having conductor 36 and therebetween insulator. The insulator being the high resistance that blocks shorts.[0029], second electrode area has conductor and surrounding conductor is higher resistance.) Takebayashi does not disclose: The wafer placement table according to claim 2, wherein the high-resistance section is an arc-shaped section centered at one of the inner via and the feed via. However, the recited features is a mere change in shape of the working parts of Takebayashi. Here there is no persuasive evidence that the particular configuration of the claimed shape is significant. It would have been obvious to one having ordinary skill in the prior to the effective filing date of this application for the obvious benefit of providing a state to heat a wafer having a desired shape, by providing the vias and jumper wires in the recited locations and configurations. As such, the features of claim 4 would have been obvious to one having ordinary skill in the art. See MPEP 2144.04(A)(B) Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ROBERT G BACHNER whose telephone number is (571)270-3888. The examiner can normally be reached on Monday-Friday, 10-6 EST. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Ajay Ojha can be reached at (571)273-8936. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ROBERT G BACHNER/Primary Examiner, Art Unit 2898
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Prosecution Timeline

Mar 08, 2023
Application Filed
Dec 05, 2025
Non-Final Rejection — §103
Apr 08, 2026
Applicant Interview (Telephonic)
Apr 08, 2026
Examiner Interview Summary

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Prosecution Projections

1-2
Expected OA Rounds
88%
Grant Probability
94%
With Interview (+6.5%)
2y 6m
Median Time to Grant
Low
PTA Risk
Based on 838 resolved cases by this examiner. Grant probability derived from career allow rate.

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