Prosecution Insights
Last updated: September 17, 2026
Application No. 18/251,775

PREPARATION METHOD OF HIGH RESISTANCE GALLIUM OXIDE BASED ON DEEP LEARNING AND HEAT EXCHANGE METHOD

Final Rejection §101
Filed
May 04, 2023
Priority
Dec 31, 2020 — CN 202011639082.6 +1 more
Examiner
HICKS, AUSTIN JAMES
Art Unit
2142
Tech Center
2100 — Computer Architecture & Software
Assignee
Hangzhou Fujia Gallium Technology Co. Ltd.
OA Round
2 (Final)
75%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 75% — above average
75%
Career Allowance Rate
314 granted / 419 resolved
+19.9% vs TC avg
Strong +26% interview lift
Without
With
+25.8%
Interview Lift
resolved cases with interview
Typical timeline
3y 2m
Avg Prosecution
53 currently pending
Career history
468
Total Applications
across all art units

Statute-Specific Performance

§101
13.4%
-26.6% vs TC avg
§103
53.8%
+13.8% vs TC avg
§102
15.9%
-24.1% vs TC avg
§112
14.5%
-25.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 419 resolved cases

Office Action

§101
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Response to Arguments The prior art rejection is overcome by the amendments filed 7/31/2026. With respect to the 101 rejection, Applicant's arguments filed 7/31/2026 have been fully considered but they are not persuasive. Applicant argues, the present invention is directed to a specific, hardware-parameter-driven deep learning method integrated into a heat exchange method (HEM) crystal growth apparatus to optimize semiconductor manufacturing. Unlike generic data processing networks, currently amended independent claim 11 explicitly recites obtaining preparation data directly "from a crystal growth apparatus," where the data comprises highly specific physical and structural hardware-state metrics: (1) a "deviation value of the full width at half maxima (FWHM) of seed crystal diffraction peak," which reflects spatial variance in the physical lattice quality of the seed crystal via X-ray diffraction, and (2) a "deviation value of the thermal resistance value of insulating layer," which characterizes real-time spatial non-uniformity and physical degradation of the furnace's thermodynamic boundary. These exclusive, unconventional measurement values reflect the specific internal physical state of the equipment unique to the preparation of high-resistance gallium oxide single crystals…. the claimed combination provides a concrete improvement to the technical field of semiconductor fabrication and crystal growth control under MPEP § 2106.05(a), thereby integrating any alleged exception into a practical application (see McRO, Inc. v. Bandai Namco Games America Inc., 837 F.3d 1299 (Fed. Cir. 2016)). Remarks 8. The MPEP 2106.05(g) states “Below are examples of activities that the courts have found to be insignificant extra-solution activity:… iii. Selecting information, based on types of information and availability of information in a power-grid environment, for collection, analysis and display…” The claims fit neatly in this bucket. The data is directed to specialized data, representing a real system, but collecting and analyzing special data is insignificant extra-solution activity that does not amount to significantly more than the abstract idea. Therefore, the claims are ineligible for patent protection. Applicant argues, “as independent system claim 20 recites a hardware architecture (a processor and a non-transitory memory) specifically configured to execute this unconventional sequence of physical-parameter-driven steps, the combination provides an inventive concept that is far from well-understood, routine, or conventional in the art.” Remarks 8. MPEP 2106.05(f) states “instruction to apply the abstract idea using a generic computer do not render an abstract idea eligible…” A processor and memory is a generic computer. Instruction to apply an abstract idea to a generic computer does not amount to significantly more than the abstract idea, and is patent ineligible subject matter. MPEP 2106.05(f) Claim Rejections - 35 USC § 101 35 U.S.C. 101 reads as follows: Whoever invents or discovers any new and useful process, machine, manufacture, or composition of matter, or any new and useful improvement thereof, may obtain a patent therefor, subject to the conditions and requirements of this title. Claims 11, 12, 14, 15 and 20 are rejected under 35 U.S.C. 101 because the claimed invention is directed to abstract idea of a mental concept without significantly more. The claims recite collecting data, preprocessing data and inputting the preprocessed data into a neural network to predict resistivity in a gallium oxide crystal. This judicial exception is not integrated into a practical application because the additional elements such as various types of data “simply an attempt to limit the use of the abstract idea to a particular technological environment”. MPEP 2106.05(h) example vi. The claims do not include additional elements that are sufficient to amount to significantly more than the judicial exception because additional elements such as a processor and storage media are generic computer parts. Conclusion THIS ACTION IS MADE FINAL. Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Austin Hicks whose telephone number is (571)270-3377. The examiner can normally be reached Monday - Thursday 8-4 PST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Mariela Reyes can be reached at (571) 270-1006. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /AUSTIN HICKS/Primary Examiner, Art Unit 2142
Read full office action

Prosecution Timeline

May 04, 2023
Application Filed
May 21, 2026
Non-Final Rejection mailed — §101
Jul 31, 2026
Response Filed
Aug 13, 2026
Final Rejection mailed — §101 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
75%
Grant Probability
99%
With Interview (+25.8%)
3y 2m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 419 resolved cases by this examiner. Grant probability derived from career allowance rate.

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