DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Priority
Acknowledgment is made of applicant’s claim for domestic benefit under 35 U.S.C. 365(c) with PCT/EP2021/084996 which in turn claims foreign priority under 35 U.S.C. 119 (a)-(d) with DE102020133177.0. The certified copy of foreign priority has been filed with the Office on June 5, 2023.
Information Disclosure Statement
The information disclosure statement (IDS) submitted on June 5, 2023 was filed in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement has been considered by the examiner.
Claim Rejections - 35 USC § 103
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or nonobviousness.
Claims 21-33, 36-37 are rejected as being unpatentable over 35 U.S.C. 103 over Kawakami et al. US 20190221999 in view of Lauer et al. US 20120250717.
Regarding Claim 21, Kawakami teaches A light-emitting semiconductor chip (Fig. 1A & 1B) comprising:
a semiconductor body (Fig. 1A & 1B, 303 Paragraph 0050 “a semiconductor laser device 303”) comprising a emitter unit. (Paragraph 0050 “a semiconductor laser device 303”)
wherein each emitter unit comprises an active region (Fig. 1A & 1B, 3 Paragraph 0051 “The active layer 3 has a quantum well layer.”) which is arranged in a resonator having an outcoupling side and a rear side (Paragraph 0067-69 “Further, it can also be said that a first mirror (the one end face 6) and a second mirror (the reflecting surface) are arranged substantially in parallel with each other at both ends of the optical waveguide structure. The first mirror described above is substantially flat over an area from an upper surface of the laminated body structure to a second surface of the substrate 1. The second mirror described above is formed on one surface of the recessed portion 7 starting from the upper surface of the laminated body structure and reaching at least the first clad layer 2 through the second clad layer 4. The recessed portion 7 has a side face (opposite surface) opposite to the second mirror, and the opposite surface is arranged at a position away from the end face of the second end of the semiconductor laser device 303. The side face of the recessed portion 7 on a first mirror side is covered by the dielectric film 8, and the dielectric film 8 is covered by the metal film 9. In this way, the second mirror is formed by laminating the dielectric film 8 and the metal film 9 in this order from the active layer 3. The reflection ratio of the laser light of the first mirror is lower than that of the second mirror.”) and which is configured to emit light at the outcoupling side along a radiation emission direction,
wherein, in each emitter unit, the active region is completely penetrated by at least one recess (Fig. 1A & 1B, 7) in the semiconductor body (Fig. 1B shows the active region is completely penetrated by the one recess),
wherein, in each emitter unit, in a region of the active region the recess has a recess width measured along the radiation emission direction (See annotated Fig. 1B below), and
Kawakami does not teach a plurality of emitter units, and wherein recess widths of the emitter units are at least partially different.
However,
Lauer teaches a semiconductor body comprising a plurality of emitter units. (Fig. 4 Paragraph 0073 “In the case of the example illustrated schematically in a plan view in FIG. 4, the edge emitting semiconductor laser is a laser bar comprising a plurality of contact strips 8 at the top side 5 of the semiconductor body 10.”) and wherein recess widths of the emitter units are at least partially different. (Fig. 4 shows the recess widths, the widths of 6, that are partially different by not being a straight line.)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor chip as taught by Kawakami by adding a plurality of emitter units as disclosed by Laurer. One of ordinary skill in the art would have been motivated to make this modification in order to have multiple emission locations. (Laurer Paragraph 0074)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor chip as taught by Kawakami by having the recess widths be partial different as disclosed by Laurer. One of ordinary skill in the art would have been motivated to select lateral modes of light (Lauer Paragraph 0007 “a phase structure for selection of lateral modes of the laser radiation emitted by the active layer is formed in the semiconductor body, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body” Paragraph 0054 “The calculation of the three-dimensional structure of the phase structures 6 such that a desired influencing of the lateral mode spectrum is achieved is known per se from WO 01/97349 A1, the subject matter of which is incorporated herein by reference.”)
Regarding Claim 22, Kawakami in view of Lauer does not teach the recess widths of the emitter units differ by an amount that is greater than or equal to 1 nm and less than or equal to 2 µm.
However,
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the recess widths as taught by Kawakami because changing the recess widths would optimize the lateral mode spectrum (Lauer Paragraph 0054 “The calculation of the three-dimensional structure of the phase structures 6 such that a desired influencing of the lateral mode spectrum is achieved is known per se from WO 01/97349 A1, the subject matter of which is incorporated herein by reference.”) (MPEP 2144.05 II).
Regarding Claim 23, Kawakami in view of Lauer teaches at least three emitter units are present (Fig. 4 of Lauer shows at least three emitter units)
Kawakami in view of Lauer does not teach the recess widths of the emitter units differ equidistantly from each other.
However,
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the recess widths as taught by Kawakami because changing the recess widths to be equidistantly from each other would optimize the lateral mode spectrum (Lauer Paragraph 0054 “The calculation of the three-dimensional structure of the phase structures 6 such that a desired influencing of the lateral mode spectrum is achieved is known per se from WO 01/97349 A1, the subject matter of which is incorporated herein by reference.”) (MPEP 2144.05 II).
Regarding Claim 24, Kawakami in view of Lauer teaches each emitter unit has at least one recess that is separate from the recesses of other emitter units. (Fig. 1A of Kawakami shows the recess 7 is does not extend to the left and right sides of the laser. When this light emitting semiconductor chip is modified to have a plurality of emitter units none of the unit will have touching recesses even if the emitter units are touching each other. As such the combination of Kawakami in view of Lauer has each emitter unit with at least one recess that is separate from the recesses of other emitter units.)
Regarding Claim 25, Kawakami in view of Lauer does not teach the at least one recess extends through active regions of two or more emitter units.
However,
Lauer teaches a recess that extends though two or more emitter units. (Fig. 4, 7. By modifying the recess in the modified device to be connected to all other recesses the modified device now has one recess extending though active regions of two or more emitter units.)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the recess as taught by Kawakami by having it go through two or more emitter units as disclosed by Lauer. One of ordinary skill in the art would have been motivated to make this modification in order to produce a small beam divergence. (Paragraph 0076 “For such an application in which the radiation from the semiconductor laser is coupled into an optical fiber 18, the semiconductor body 10 provided with the phase structures 6 is particularly well suited because a small beam divergence both in the vertical and in the horizontal beam direction can be obtained by the phase structures 6.”)
Regarding Claim 26, Kawakami in view of Lauer does not teach the recess width of the at least one recess increases continuously or stepwise from emitter unit to emitter unit.
However,
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the recess width as taught by Kawakami because changing the recess widths to be increasing continuously or stepwise from emitter unit to emitter unit would optimize the lateral mode spectrum (Lauer Paragraph 0054 “The calculation of the three-dimensional structure of the phase structures 6 such that a desired influencing of the lateral mode spectrum is achieved is known per se from WO 01/97349 A1, the subject matter of which is incorporated herein by reference.”) (MPEP 2144.05 II).
Regarding Claim 27, Kawakami in view of Lauer teaches at least one recess has a rectangular base surface or an at least partially wedge-shaped and/or at least partially rounded base. (Fig. 1B of Kawakami shows the recess has a rectangular base surface Paragraph 0057 “The shape of the recessed portion 7 in plan view is a rectangle.”)
Regarding Claim 28, Kawakami in view of Lauer teaches for each emitter unit, the semiconductor body comprises a ridge waveguide structure, (Fig. 1A shows the semiconductor body comprises a ridge waveguide structure Paragraph 0054 “A range of the optical waveguide in a short direction of the semiconductor laser device 303 is a width of a high refractive index region formed in the second clad layer 4 and the range is the same as a width of a ridge portion in the embodiment.”) and wherein the ridge waveguide structure comprises, in the region of the at least one recess, a thickening (Fig. 1B, 5) along a main extension direction of the at least one recess (Fig. 1B shows the thickening extends in the horizontal direction which is the main extensions direction of the recess).
Regarding Claim 29, Kawakami teaches or each emitter unit, at least one recess is arranged in a region of the rear side (Fig. 1B shows that the recess is arranged in a region of the rear side which is the far side of the laser device.)
Regarding Claim 30, Kawakami does not teach for each emitter unit, at least one recess is arranged in a region of the outcoupling side.
However,
Lauer teaches for each emitter unit, at least one recess is arranged in a region of the outcoupling side. (Fig. 4 shows that there is one recess on both the outcoupling side and the rear of the emitter units)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor chip as taught by Kawakami by adding the recess arranged in the outcoupling side as disclosed by Lauer. One of ordinary skill in the art would have been motivated to make this modification in order to dampen higher laser modes. (Lauer Paragraph 0020 “The phase structure is preferably embodied such that the lateral fundamental mode of the laser radiation experiences lower losses than the radiation of higher laser modes. On account of the phase structure, the laser radiation that propagates in the waveguide region experiences circulation losses, wherein the structured region is embodied such that higher laser modes are damped to a greater extent than the lateral fundamental mode. What can be achieved in this way, in particular, is that only one or a few preferred laser modes, preferably only the lateral fundamental mode, commence oscillation during operation of the semiconductor laser.”)
Regarding Claim 31, The modified device does not teach for each emitter unit, the active region is completely penetrated by at least two recesses, and wherein one of the recesses is arranged in the region of the rear side and another of the recesses is arranged in the region of the outcoupling side.
However,
Lauer teaches two recesses wherein one of the recesses is arranged in the region of the rear side and another of the recesses is arranged in the region of the outcoupling side. (Fig. 4 shows that there is one recess on both the outcoupling side and the rear of the emitter units)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor chip as taught by Kawakami by adding the recess arranged in the outcoupling side as disclosed by Lauer. One of ordinary skill in the art would have been motivated to make this modification in order to dampen higher laser modes. (Lauer Paragraph 0020 “The phase structure is preferably embodied such that the lateral fundamental mode of the laser radiation experiences lower losses than the radiation of higher laser modes. On account of the phase structure, the laser radiation that propagates in the waveguide region experiences circulation losses, wherein the structured region is embodied such that higher laser modes are damped to a greater extent than the lateral fundamental mode. What can be achieved in this way, in particular, is that only one or a few preferred laser modes, preferably only the lateral fundamental mode, commence oscillation during operation of the semiconductor laser.”)
Regarding Claim 32, Kawakami in view of Lauer teaches for each emitter unit, the at least one recess has at least one coating specifying a reflectivity of the recess for the light generated in the active region, (Kawakami Fig. 1B, 10, 9, 8 Paragraph 0064 “For example, the end face coat film 11 is formed so that the reflection ratio of the generated laser light at the emitting surface is lower than that at the reflecting surface.”)
Kawakami in view of Lauer does not teach the reflectivity being less than or equal to 99.9% and greater than or equal to 80%.
However,
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the reflectivity of the recess as taught by Kawakami because changing the reflectivity would optimize the performance of the semiconductor chip (Kawakami Paragraph 0064 “The reflection ratios of the laser light at the emitting surface and the reflecting surface can be appropriately determined according to, for example, a desired performance of the semiconductor laser device.”) (why there is optimization) (MPEP 2144.05 II).
Regarding Claim 33, Kawakami in view of Lauer teaches for each emitter unit,
the at least one recess has, in the radiation emission direction, a first side surface and a second side surface opposite the first side surface (See annotated Fig. 1B below), and
the first side surface has a first coating which provides a reflectivity for the light generated in the active region and which is formed as a first layer sequence with a plurality of individual layers (Fig. 1B, 11, 9, 8), and/or
the second side surface has a second coating which provides a reflectivity for the light generated in the active region and which is formed as a second layer sequence with a plurality of individual layers (Fig. 1B, 10, 9, 8).
Regarding Claim 36, Kawakami in view of Lauer teaches a filling in the recess. (Kawakami Fig. 1B shows a partial filling of the recess)
Regarding Claim 37, Kawakami in view of Lauer teaches each emitter unit comprises a first segment and a second segment (See annotated Fig. 1B), the first segment being electrically and/or optically isolated from the second segment by the at least one recess. (Layer 8 is a dielectric which would electrically separate the first segment and the second segment. In addition the layers in recess 7 is part of the rear mirror as such the light is reflected away from the second segment. This means that the first and second segments are also optically isolated from each other.)
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Regarding Claim 38, Kawakami in view of Lauer does not teach for each emitter unit, the first segment comprises a light generating part and the second segment comprises a modulating element configured to modulate an intensity of the light of the active region. (Kawakami Paragraph 0066 “The semiconductor laser device 303 further includes window regions 5. The window regions 5 are regions which are located at both end portions of the optical waveguide and which absorb the laser light less than a central portion of the optical waveguide.” The light’s intensity will be modulated by the absorption of the second segment.)
Regarding Claim 39, Kawakami does not teach wherein at least one of the emitter units comprises a segment comprising one or more of a photodiode, a passive waveguide, an active waveguide, a beam splitter, a beam combiner, a lens, a wavelength selective element, phase shift elements, a frequency doubler, a taper, an amplifier, a converter or a transistor.
However,
Lauer teaches wherein at least one of the emitter units comprises a segment comprising one or more of a photodiode, a passive waveguide, an active waveguide, a beam splitter, a beam combiner, a lens, a wavelength selective element, phase shift elements, a frequency doubler, a taper, an amplifier, a converter or a transistor. (Fig. 4, 19 Paragraph 0075 “By way of example, the first optical element 19 can be a microlens array,”)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor chip as taught by Kawakami by adding the microlens array as disclosed by Lauer. One of ordinary skill in the art would have been motivated to make this modification in order to shape the laser beam of the semiconductor chip. (Lauer Paragraph 0075 “wherein each emission region is assigned a microlens which brings about beam shaping of the respective laser beam 17.”)
Regarding Claim 40, Kawakami in view of Lauer teaches the method comprising:
producing the semiconductor body; (Kawakami Paragraph 0075 “The manufacturing method includes a step (optical waveguide forming step) of forming a portion to be the optical waveguide extending from the first end to the second end of the substrate 1 in the second clad layer 4 of an device material having the first clad layer 2, the active layer 3, and the second clad layer 4 in this order on the substrate 1. This step can be performed by, for example, a first step described below. FIG. 2A is a perspective view schematically showing a product of the first step in a manufacturing process of the semiconductor laser device 303. FIG. 2B is a diagram schematically showing a structure of a section of the product taken along line IIB-IIB in FIG. 2A.”) and
producing the at least one recess in the semiconductor body. (Kawakami Paragraph 0079 “For example, the forming the recessed portion is forming the recessed portion 7 having a depth of traversing the active layer 3 in a thickness direction of the substrate 1, for example, the recessed portion 7 reaching from the second clad layer 4 to the substrate 1.”)
Claims 34-35 are rejected as being unpatentable over 35 U.S.C. 103 over Kawakami and Lauer in view of König et al. US 20190348568.
Regarding Claim 34, Kawakami in view of Lauer does not teach the first coating and the second coating are embodied differently from each other.
However,
König teaches the first coating and the second coating are embodied differently from each other. (Paragraph 0075 “Each of the recesses 40 is provided with a passivation layer 60 and a mirror layer 70.” Fig. 10 shows the layers are embodied differently from each other.)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the first and second coatings as taught by Kawakami by having the first and second coatings be embodied differently from each other as disclosed by König. One of ordinary skill in the art would have been motivated to make this modification in order to use less material.
Regarding Claim 35, Kawakami in view of Lauer and König teaches a thickness of the first coating in the region of the first side surface to a thickness of the second coating in the region of the second side surface has a ratio between 1:1 and 1:20, inclusive. (Kawakami Fig. 1B shows the thickness of the first and second coatings have the same thickness which is a ratio of 1:1)
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Behfar et al. US 20100316076 teaches some features found in Claim 21.
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/STEPHEN SUTTON KOTTER/Examiner, Art Unit 2828
/MINSUN O HARVEY/Supervisory Patent Examiner, Art Unit 2828