Prosecution Insights
Last updated: April 19, 2026
Application No. 18/257,033

OPTOELECTRONIC DEVICE

Non-Final OA §102
Filed
Jun 12, 2023
Examiner
PARK, KINAM
Art Unit
2828
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
AMS-OSRAM AG
OA Round
1 (Non-Final)
82%
Grant Probability
Favorable
1-2
OA Rounds
2y 6m
To Grant
89%
With Interview

Examiner Intelligence

Grants 82% — above average
82%
Career Allow Rate
680 granted / 829 resolved
+14.0% vs TC avg
Moderate +7% lift
Without
With
+7.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
14 currently pending
Career history
843
Total Applications
across all art units

Statute-Specific Performance

§101
1.1%
-38.9% vs TC avg
§103
33.8%
-6.2% vs TC avg
§102
40.2%
+0.2% vs TC avg
§112
13.6%
-26.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 829 resolved cases

Office Action

§102
DETAILED ACTION 1. The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 2. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention. 3. Claims 1-15 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by LEE et al. (US 20180350871). Regarding claim 1, LEE et al. discloses in figure 3E and specification: 1. An optoelectronic device with at least two emission regions (see, 330R, 330G, fig. 3E, see also, paragraph [0079]) and with a radiation exit surface (see, arrow end of T1, T2, fir 3E) wherein - the emission regions each comprise an active region (see, 311a, 311b, fig. 3E, see also, paragraph [0064]) provided for generating radiation, - the active regions of the emission regions are arranged in a common emitter plane (see, upper surface of 309b, fig. E), - the emission regions are each assigned a partial region (see, 321R, 321G, fig. 3.E) of the radiation exit surface through which the radiation emitted by the respective emission region exits, - the radiation exit surface is formed at least in places by a radiation-transmissive body (see, 319, fig. 3E, see also, paragraph [0033]) arranged on at least one of the emission regions, and - the partial regions of the radiation exit surface are arranged at different distances (dl, d2) (see, T1, T2, fig. 3E, see also, paragraph [0079]) from each other with respect to the common emitter plane. PNG media_image1.png 250 362 media_image1.png Greyscale Regarding claim 2, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein the virtual focal points of the emission regions differ in their distance from the associated active regions (inherent due to 330R and 330G). Regarding claim 3, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein, during operation of the optoelectronic device, radiation cones of the emitted radiation emerging from the partial regions the radiation exit surface overlap (inherent due to distance between 330R and 330G). Regarding claim 4, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein, during operation of the optoelectronic device, the radiation emitted by an emission region emerges in each case from only exactly one partial region of the radiation exit surface (inherent due to distance between 330R and 330G). Regarding claim 5, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein the radiation-transmissive body has a front side which forms the partial region of the radiation exit surface, and a thickness of the radiation-transmissive body perpendicular to the front side is at most such that the radiation cone exiting from the associated emission region exits completely from the front side of the radiation- transmissive body (see, 319, fig. 3.E). Regarding claim 6, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein one of the emission regions (2) is free of the radiation-transmissive body (see, 319, fig. 3.E). Regarding claim 7, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein the radiation-transmissive body has a front side which forms the partial region of the radiation exit surface, and a thickness of the radiation-transmissive body perpendicular to the front side is at most such that the radiation cone exiting from the associated emission region exits completely from the front side of the radiation- transmissive body (see, 319, fig. 3.E). Regarding claim 8, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein one of the emission regions is free of the radiation-transmissive body (see, 319, fig. 3.E). Regarding claim 9, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein the radiation-transmissive body is a prefabricated element attached to the associated emission region (see, 319, fig. 3.E). Regarding claim 10, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 9, wherein the active region of at least one emission region is divided into a plurality of individual emitters (see, paragraph [0064]). Regarding claim 11, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 9, wherein the individual emitters of one emission region are integrated in a common semiconductor body (see, 317a, fig. 3E). Regarding claim 12, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein the individual emitters of one emission region are integrated in a common semiconductor body (see, 317a, fig. 3E). Regarding claim 13, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, herein the emission regions are each formed by surface emitters (see, arrow in 317a, fig. 3E). Regarding claim 14, LEE et al. discloses in figure 3E and specification the optoelectronic device according to claim 1, wherein the emission regions are each formed by a matrix of vertical cavity surface emitting semiconductor lasers (see, arrow in 317a, fig. 3E). Regarding claim 15, claim 15 is rejected for the same reasons applied to claims 1-14 since the limitations of claim 15 are implemented by the limitations of claims 1-14. Conclusion 4. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Kinam Park whose telephone number is (571) 270-1738. The examiner can normally be reached on from 9:00 AM-5:00 PM. If attempts to reach the examiner by telephone are unsuccessful, the examiner's supervisor, MINSUN HARVEY, can be reached on (571) 272-1835. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). /KINAM PARK/Primary Examiner, Art Unit 2828 .
Read full office action

Prosecution Timeline

Jun 12, 2023
Application Filed
Jan 24, 2026
Non-Final Rejection — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12603480
SEMICONDUCTOR LASER WITH METAL PULL-BACK DBR GRATING
2y 5m to grant Granted Apr 14, 2026
Patent 12603478
SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER DEVICE
2y 5m to grant Granted Apr 14, 2026
Patent 12603472
TIME-OF-FLIGHT SENSOR AND MANUFACTURING METHOD THEREOF
2y 5m to grant Granted Apr 14, 2026
Patent 12597751
LASER-INDUCED GRAPHENE DEVICE BUILT ON WOOD, AND FABRICATION METHOD THEREOF
2y 5m to grant Granted Apr 07, 2026
Patent 12592538
SOLID-STATE LASER SYSTEM, PHASE MATCHING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
2y 5m to grant Granted Mar 31, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

1-2
Expected OA Rounds
82%
Grant Probability
89%
With Interview (+7.3%)
2y 6m
Median Time to Grant
Low
PTA Risk
Based on 829 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month