Prosecution Insights
Last updated: July 17, 2026
Application No. 18/282,804

SEMICONDUCTOR LASER DIODE ARRAY AND THE METHOD FOR MANUFACTURING A TWO-DIMENSIONAL SEMICONDUCTOR LASER DIODE ARRAY

Non-Final OA §112
Filed
Sep 19, 2023
Priority
Mar 19, 2021 — PL P.437357 +1 more
Examiner
EHRLICH, ALEXANDER JOSEPH
Art Unit
2828
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Instytut Wysokich Cisnien Polskiej Akademii Nauk
OA Round
1 (Non-Final)
67%
Grant Probability
Favorable
1-2
OA Rounds
8m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 67% — above average
67%
Career Allowance Rate
30 granted / 45 resolved
-1.3% vs TC avg
Strong +50% interview lift
Without
With
+50.0%
Interview Lift
resolved cases with interview
Typical timeline
3y 6m
Avg Prosecution
18 currently pending
Career history
74
Total Applications
across all art units

Statute-Specific Performance

§103
89.5%
+49.5% vs TC avg
§112
10.0%
-30.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 45 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Priority Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55. Information Disclosure Statement The information disclosure statement (IDS), submitted on 09/17/2024, is in compliance with the provisions of 37 CFR 1.97. Accordingly, the IDS is being considered by the examiner. Ref. 4 not presented by Applicant but located and considered independently by Examiner. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-2, 6-14, 16 (and 3-5, 15 via dependency) rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 1 recites the limitations "the laser waveguides", “the resonant cavity”, “the surface of the GaN substrate” in line 11, line 12, line 19, respectively. There is insufficient antecedent basis for this limitation in the claim. Claim 2 recites the limitations "the vertical mirror", “the top plane” of the subcontact layer, “the quantum well plane”, “the bottom edge” of the oblique deflector plane in line 5, line 6, line 7, line 8, respectively. There is insufficient antecedent basis for this limitation in the claim. The term “high” in claim 6-7, 12-13 is a relative term which renders the claim indefinite. The term “high” is not defined by the claim, the specification does not provide a standard for ascertaining the requisite degree, and one of ordinary skill in the art would not be reasonably apprised of the scope of the invention. “Reflection coefficient” is rendered indefinite. Examiner interprets “high” to mean “greater than 0”. Claim 7, 13 recites the limitation "the layer with a high reflection coefficient" in line 2, lines 2-3, respectively. There is insufficient antecedent basis for this limitation in the claim. Claim 8’s dependence on claim 1 results in multiple duplicate claim elements/limitations, listed below with claim 8 citations: “a two-dimensional laser diode array” line 1 “a structured gallium nitride bulk substrate” line 3 “a lower cladding layer with n-type electrical conductivity” lines 3-4 “a lower light guide layer with n-type electrical conductivity” lines 4-5 “a light emitting layer” line 5 “an electron blocking layer with p-type electrical conductivity” lines 5-6 “an upper light guide layer” line 6 “an upper cladding layer with p-type electrical conductivity” lines 6-7 “a subcontact layer with p-type electrical conductivity” line 7 “waveguides of the laser diodes” line 8 “etched mirrors forming the resonant cavity” lines 8-9 “a thickness” line 10 “light beam deflectors” line 12 “a parallel deflector plane” line 15 “an oblique deflector plane” line 16 It is unclear if these are additional elements or if they are references to the existing elements previously introduced in claim 1. Examiner interprets them to be references to the existing elements. Claim 8 recites the limitation "the light generating active region" in line 14. There is insufficient antecedent basis for this limitation in the claim. Claim 9 recites the limitations "the vertical mirror", “the top plane” of the subcontact layer, “the quantum well plane”, “the bottom edge” of the oblique deflector plane in line 4, line 5, line 6, line 7, respectively. There is insufficient antecedent basis for this limitation in the claim. Claim 10, 11, 12 recites the limitation "the oblique deflector planes" in line 2, line 2, line 3, respectively. There is insufficient antecedent basis for more than one oblique deflector plane in the claim. Only one oblique deflector plane introduced at a point in the claims prior to this recitation. Claim 12 recites the limitation "the parallel deflector planes" in line 2. There is insufficient antecedent basis for more than one parallel deflector plane in the claim. Only one parallel deflector plane introduced at a point in the claims prior to this recitation. Claim 14 recites the limitation "the plane intersecting the deflector in the middle of its height" in lines 3-4. There is insufficient antecedent basis for this limitation in the claim. Claim 16 recites the limitation "the vertical mirror", “the waveguide axis” in lines 2-3, lines 3-4, respectively. There is insufficient antecedent basis for this limitation in the claim. Allowable Subject Matter Claim 1 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. Claim 2-16 would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims. Claim 2-16 objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: Claim 1: The high degree of specificity within claim 1 requires an unreasonable and nonobvious level of modification to any single prior art reference of record to read on the entirety of the claim. Best prior art of record is Akasaka (JP-2002368332-A). See PTO-892. Akasaka still fails to disclose at least: GaN substrate Substrate at least 200 um Beam deflectors formed in substrate Oblique deflector plane tilted at 40-50 degrees Parallel deflector plane higher than subcontact layer by at least 0.5 um (no value provided) Claims 2-16: Depend from claim 1 Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to Alex Ehrlich whose telephone number is (703)756-5716. The examiner can normally be reached M-F 8-5. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, MinSun Harvey can be reached at (571) 272-1835. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /A.E./Examiner, Art Unit 2828 /MINSUN O HARVEY/Supervisory Patent Examiner, Art Unit 2828
Read full office action

Prosecution Timeline

Sep 19, 2023
Application Filed
Jun 16, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12683353
MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE
3y 7m to grant Granted Jul 14, 2026
Patent 12684969
DISPLAY DEVICE
3y 5m to grant Granted Jul 14, 2026
Patent 12676450
HIGH-BRIGHTNESS HIGH-POWER SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
3y 8m to grant Granted Jul 07, 2026
Patent 12665388
LAYERED PULSE GENERATION FOR LASER DRIVER APPLICATION IN 3D SENSING
4y 5m to grant Granted Jun 23, 2026
Patent 12666758
ULTRAVIOLET LED AND MANUFACTURING METHOD THEREOF
3y 10m to grant Granted Jun 23, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
67%
Grant Probability
99%
With Interview (+50.0%)
3y 6m (~8m remaining)
Median Time to Grant
Low
PTA Risk
Based on 45 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month