Prosecution Insights
Last updated: August 18, 2026
Application No. 18/283,795

SINGLE-CRYSTAL DIAMOND AND DIAMOND COMPOSITE CONTAINING THE SAME

Final Rejection §102
Filed
Sep 23, 2023
Priority
Mar 31, 2021 — JP 2021-061210 +1 more
Examiner
LE, HOA T
Art Unit
1788
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Sumitomo Electric Industries Ltd.
OA Round
3 (Final)
73%
Grant Probability
Favorable
4-5
OA Rounds
0m
Est. Remaining
85%
With Interview

Examiner Intelligence

Grants 73% — above average
73%
Career Allowance Rate
791 granted / 1090 resolved
+7.6% vs TC avg
Moderate +12% lift
Without
With
+12.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
30 currently pending
Career history
1138
Total Applications
across all art units

Statute-Specific Performance

§101
0.7%
-39.3% vs TC avg
§103
42.5%
+2.5% vs TC avg
§102
27.2%
-12.8% vs TC avg
§112
24.1%
-15.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1090 resolved cases

Office Action

§102
DETAILED ACTION The text of those sections of Title 35, U.S. Code not included in this action can be found in a prior Office action. Claim Rejections - 35 USC § 102 Claims 1-4, 6-16 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by DODGE et al (WO-2008-107860).1 Claim 1: Dodge teaches a high pressure high temperature (HPHT) single-crystal diamond comprising a grown striation parallel to the main grown surface and the grown striation has an off-cut angle with respect to the crystal plane having index of 5 or lower (Dodge, page 4, lines 15-30; page 5, lines 24-30; page 8, line 5 to page 9, line 22; and page 35, lines 4-14 and Figure 3b for the off-cut angle). Further, it is noticed that the HPHT crystal diamond of Dodge is performed at 1200 to 1600oC and 5-6 GPa (page 17, lines 12-15) and using solvent catalysts of Fe-Ni alloy (page 17, lines 1-6) which is the same process conditions disclosed in the instant specification. Therefore, any properties that are not reported in Dodge are deemed met by inherence in view of the same process of making the HPHT single-crystal diamond. Claim 2: Dodge also teaches a HPHT single-crystal diamond comprising a linear defect extending toward a main grown surface and having an off-cut angle with respect to an average direction of the linear defect extending toward the main grown surface (Dodge, page 24, line 30 to page 26, line 14). Claims 3-4: Dodge teaches the HPHT single-crystal diamond having the off-cut angle ranges within 15 degrees (page 15, lines 4-14) which fall within the claimed ranges of 0.1-20 and 0.8-15 degrees. ). Further, it is noticed that the HPHT crystal diamond of Dodge is performed at 1200 to 1600oC and 5-6 GPa (page 17, lines 12-15) and using solvent catalysts of Fe-Ni alloy (page 17, lines 1-6) which is the same process conditions disclosed in the instant specification. Therefore, any properties that are not reported in Dodge are deemed met by inherence in view of the same process of making the HPHT single-crystal diamond. Claim 6-7: Dodge teaches the low index plane includes (hkl) plane of (100) and (111) and a side of <110> (page 15, lines 8-14; page 17, lines 6-10; paragraph bridging pages 19-20; and page 24, lines 14-20). Claim 8: Dodge teaches the HPHT single-crystal including the off-cut angle has a volume percentage of 0.8% by volume or more (See Figure 3c). Further, it is noticed that the HPHT crystal diamond of Dodge is performed at 1200 to 1600oC and 5-6 GPa (page 17, lines 12-15) and using solvent catalysts of Fe-Ni alloy (page 17, lines 1-6) which is the same process conditions disclosed in the instant specification. Therefore, any properties that are not reported in Dodge are deemed met by inherence in view of the same process of making the HPHT single-crystal diamond. Claim 9: The HPHT single-crystal diamond of Dodge having a sum of (a) the area of a main grown surface forming an off-cut angle between the grown striation and the low-index crystal plane having the (hkl) plane orientation or (2) and (b) the area of a just-grown surface on which the off-cut angle is eliminated, is a maximum compared with an area of a plane having an orientation other than that of the (hkl) plane orientation of the low-index crystal plane (Page 28, line 5 to page 29, line 16). Further, it is noticed that the HPHT crystal diamond of Dodge is performed at 1200 to 1600oC and 5-6 GPa (page 17, lines 12-15) and using solvent catalysts of Fe-Ni alloy (page 17, lines 1-6) which is the same process conditions disclosed in the instant specification. Therefore, any properties that are not reported in Dodge are deemed met by inherence in view of the same process of making the HPHT single-crystal diamond. Claim 10: The HPHT single-crystal diamond of Dodge having a sum of (a) the area of a main grown surface forming an off-cut angle between a linear defect and a crystal axis of the low-index crystal plane having the (hkl) plane orientation and (b) the area of a just-grown surface on which the off-cut angle is eliminated, is a maximum compared with an area of a plane having an orientation other than that of the (hkl) plane orientation of the low-index crystal plane (Page 28, line 5 to page 29, line 16). Further, it is noticed that the HPHT crystal diamond of Dodge is performed at 1200 to 1600oC and 5-6 GPa (page 17, lines 12-15) and using solvent catalysts of Fe-Ni alloy (page 17, lines 1-6) which is the same process conditions disclosed in the instant specification. Therefore, any properties that are not reported in Dodge are deemed met by inherence in view of the same process of making the HPHT single-crystal diamond. Claim 11: The HPHT single-crystal diamond of Dodge having the sum of (a) the area of the main grown surface and (b) the area of the just-grown surface is 1.5 times larger than areas of any other surfaces (Page 29, lines 18-27). Claim 12: The HPHT single-crystal diamond of Dodge has a size of 5 mm or more (page 30). Claim 13: The HPHT single-crystal diamond of Dodge comprises at least one grown sector having a single proportion of 50% or more based on an area of the main grown surface (page 31, 1st paragraph). Claim 14: The HPHT single-crystal diamond of Dodge comprises at least two grown sectors, wherein at least one sector boundary is a boundary between a low-index crystal plane grown sector and an off-cut angle plane grown sector (See Figure 3b). Claims 15 and 16: Dodge teaches a diamond composite comprising the HPHT single-crystal diamond as discussed above comprising a seed substrate having a main surface and a low-index crystal plane, wherein the main surface has an off-cut angle with respect to the low-index crystal plane of the seed substrate and wherein the seed substrate (i.e. seed pad) has a size of 2 mm or more (page 38, 1st paragraph). Response to Arguments Applicant’s arguments with respect to claims 1-16 have been considered but are moot in view of the new reference as discussed above. Conclusion Applicant's submission of an information disclosure statement under 37 CFR 1.97(c) with the timing fee set forth in 37 CFR 1.17(p) on April 2, 2026 prompted the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 609.04(b). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to HOA (Holly) LE whose telephone number is (571)272-1511. The examiner can normally be reached Monday to Friday, 10:00 am to 7:00 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Alicia Chevalier can be reached at 571-272-1490. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. HOA (Holly) LE Primary Examiner Art Unit 1788 /HOA (Holly) LE/Primary Examiner, Art Unit 1788 1 Provided by Applicant.
Read full office action

Prosecution Timeline

Show 4 earlier events
Oct 07, 2025
Applicant Interview (Telephonic)
Dec 02, 2025
Response Filed
Mar 11, 2026
Final Rejection mailed — §102
May 07, 2026
Applicant Interview (Telephonic)
May 16, 2026
Examiner Interview Summary
Jun 08, 2026
Response after Non-Final Action
Jun 25, 2026
Final Rejection mailed — §102
Aug 07, 2026
Interview Requested

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

4-5
Expected OA Rounds
73%
Grant Probability
85%
With Interview (+12.3%)
2y 11m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 1090 resolved cases by this examiner. Grant probability derived from career allowance rate.

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