Prosecution Insights
Last updated: May 29, 2026
Application No. 18/284,003

DISTORTION RESISTANCE FILM, PRESSURE SENSOR, AND LAYERED BODY

Non-Final OA §102
Filed
Sep 25, 2023
Priority
Mar 26, 2021 — JP 2021-053111 +1 more
Examiner
LEE, KYUNG S
Art Unit
2831
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
TDK Corporation
OA Round
1 (Non-Final)
87%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
95%
With Interview

Examiner Intelligence

Grants 87% — above average
87%
Career Allowance Rate
994 granted / 1139 resolved
+19.3% vs TC avg
Moderate +8% lift
Without
With
+7.9%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 0m
Avg Prosecution
17 currently pending
Career history
1166
Total Applications
across all art units

Statute-Specific Performance

§101
0.8%
-39.2% vs TC avg
§103
60.5%
+20.5% vs TC avg
§102
24.1%
-15.9% vs TC avg
§112
3.1%
-36.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1139 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Objections Claims 2 and 3 are objected to because of the following informalities: replace “ally” with --alloy--. Appropriate correction is required. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-8 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Niwa et al. (JPH10270201; also published as JP3642449 translation attached). Regarding claim 1, Niwa teaches a distortion resistance film (“pressure transducer” and “strain sensor”; see at least paragraphs 0008 and 0011, 0018-0020 and 0033-0038) comprising an alloy material containing Cr, Al, N, and Si (Table 5, Sample Number 53, where Al is 1.2, N is 4.0, Si is 1.6 and remainder is Cr). Regarding claims 2 and 3, Niwa teaches the distortion resistance film according to claim 1, wherein the alloy material being represented by a formula Cr100-x-y-zAlxNySiz, wherein composition regions of x, y, and z satisfy 5 ≤ x ≤ 50, 1 ≤ 9 ≤ 20, and 0 < z, and wherein the alloy material being represented by a formula wherein composition regions of x, y, and z respectively satisfies 5 ≤ x ≤ 50, 1 ≤ y ≤ 20, and 0.3 ≤ z ≤ 10 (see Table 5, Sample number 57, where Al is 10.0, N is 4.0, Si is 4.0, Ni is 1.0 and the remainder is Cr). Regarding claim 4, Niwa teaches the method of forming the strain resistance film in a nitrogen atmosphere (atmospheric gas) and further annealing the film for 2 hours in a vacuum at 450 °C (see paragraphs 0030-0031). The current specification (see at least paragraphs 0040-0041) indicates that trace amounts of oxygen remain as “an inevitable impurity” in the reaction chamber as part of forming the resistance film. Therefor, Niwa’s resistance film contains oxygen in an amount of 10 at% or less with respect to a total amount of Cr, Al, N and O. Regarding claims 5 and 6, Niwa teaches the distortion resistance film (“pressure transducer” and “strain sensor”; see at least paragraphs 0008 and 0011, 0018-0020 and 0033-0038) comprising an alloy material containing Cr, Al, N, and Si (Table 5, Sample Number 53, where Al is 1.2, N is 4.0, Si is 1.6 and remainder is Cr). Niwa teaches the Cr-Al-N-Si strain resistance film having a small TCR over a wide temperature range, and the gauge factor of 2 or more (gauge factor for Sample 53 is 7.9 in paragraph 0033 compared to Table 1 of the current invention where the gauge factor ranges between 3-8) and a TCR of -4 to 4 x 10-4/°C (in paragraph 0038 compared to 2000 ppm/°C or less, as claimed). Since, the strain resistance film of Niwa is created using the same material and by the same formation method as in the present invention (vapor deposition in gas atmosphere; see claim 4 above), they having the same temperature coefficient of sensitivity and the same temperature coefficient of resistance. Regarding claim 7, Niwa teaches a pressure sensor (“pressure transducer” and “strain sensor”; see at least paragraphs 0008 and 0011, 0018-0020 and 0033-0038) comprising: the distortion resistance film according to claim 1; and an electrode portion electrically connected to the distortion resistance film (electrode is attached to the resistance film; see paragraph 0017). Regarding claim 8, Niwa teaches a layered body (“pressure transducer” and “strain sensor”; see at least paragraphs 0008 and 0011, 0018-0020 and 0033-0038) comprising: the distortion resistance film according to claim 1; and a base insulating layer that is in contact with the distortion resistance film and contains Si (the resistance film is formed on the glass substrate; see paragraph 0024). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to KYUNG S LEE whose telephone number is (571)272-1994. The examiner can normally be reached 7AM-3PM M-F. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Renee Luebke can be reached at 571-272-2009. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /KYUNG S LEE/Primary Examiner, Art Unit 2833
Read full office action

Prosecution Timeline

Sep 25, 2023
Application Filed
Feb 20, 2026
Non-Final Rejection mailed — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
87%
Grant Probability
95%
With Interview (+7.9%)
2y 0m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1139 resolved cases by this examiner. Grant probability derived from career allowance rate.

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