Prosecution Insights
Last updated: July 17, 2026
Application No. 18/287,635

PIEZOELECTRIC STACK, METHOD OF MANUFACTURING PIEZOELECTRIC STACK, SPUTTERING TARGET MATERIAL, AND METHOD OF MANUFACTURING SPUTTERING TARGET MATERIAL

Non-Final OA §102
Filed
Oct 19, 2023
Priority
Apr 20, 2021 — JP 2021-071067 +1 more
Examiner
SAN MARTIN, JAYDI A
Art Unit
Tech Center
Assignee
SUMITOMO CHEMICAL Company, Limited
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
97%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allowance Rate
870 granted / 1027 resolved
+24.7% vs TC avg
Moderate +12% lift
Without
With
+12.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
28 currently pending
Career history
1047
Total Applications
across all art units

Statute-Specific Performance

§101
0.5%
-39.5% vs TC avg
§103
65.5%
+25.5% vs TC avg
§102
20.0%
-20.0% vs TC avg
§112
5.0%
-35.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1027 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Priority Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55. Specification The specification has not been checked to the extent necessary to determine the presence of all possible minor errors. Applicant's cooperation is requested in correcting any errors of which applicant may become aware in the specification. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-3 and 5 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Shibata et al. (US20110175488, hereinafter Shibata). Regarding claims 1 and 3, Shibata discloses a piezoelectric stack comprising (Figs. 1, 2): a substrate (1) having a main surface with a diameter of 3 inches or more (paragraph [0074] discloses using a substrate of 4-6inches); and a piezoelectric film (3) on the substrate, comprising a perovskite-type alkali niobium oxide (KNN) containing potassium, sodium, niobium, and oxygen, wherein a half-value width of an X-ray rocking curve of (001) is within a range of 0.50° or more and 2.50° or less over an entire area of an inside of a main surface of the piezoelectric film excluding its periphery when performing X-ray diffraction measurement on the piezoelectric film (paragraphs [0016] and [0073]). Regarding claim 2, the piezoelectric film contains additives such as lithium, tantalum, etc… (See paragraph [0053]) Regarding claim 3, Shibata discloses a method of manufacturing a piezoelectric stack, comprising: preparing a sputtering target material comprising a sintered ceramics of a perovskite-type alkali niobium oxide containing potassium, sodium, niobium, and oxygen; preparing a substrate having a main surface with a diameter of 3 inches or more; and depositing a piezoelectric film on the substrate using the sputtering target material, the piezoelectric film comprising the alkali niobium oxide, and having a half-value width of an X-ray rocking curve of (001) within a range of 0.5° or more and 2.50° or less over an entire area of an inside of a main surface of the piezoelectric film excluding its periphery when performing X-ray diffraction measurement on the piezoelectric film. (paragraphs [0065] and [0074]) Regarding claim 5, Shibata discloses a sputtering target material comprising a sintered ceramics of a perovskite-type alkali niobium oxide containing potassium, sodium, niobium, and oxygen, wherein a piezoelectric film is obtained, having a half-value width of an X-ray rocking curve of (001) within a range of 0.50° or more and 2.50° or less over an entire area of an inside of a main surface of the piezoelectric film excluding its periphery when performing X-ray diffraction measurement on the piezoelectric film, by being deposited a piezoelectric film on a substrate with a diameter of 3 inches or more, using the sputtering target material as a target material that is used when performing a deposition treatment by a sputtering method. Please refer to paragraphs [0065] and [0074]. Allowable Subject Matter Claims 4 and 6-8 are allowed. The following is a statement of reasons for the indication of allowable subject matter: The references of the Prior Art fail to teach or disclose, alone or in obvious combination, the claimed invention as described in independent claims 4 and 6. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. See PTO-892. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Jaydi San Martin whose telephone number is (571)272-2018. The examiner can normally be reached on M-Th 7:45-6:00pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Dedei Hammond can be reached on 571-270-7938. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /J. San Martin/ Primary Examiner, Art Unit 2837
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Prosecution Timeline

Oct 19, 2023
Application Filed
Jun 23, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
97%
With Interview (+12.2%)
2y 6m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1027 resolved cases by this examiner. Grant probability derived from career allowance rate.

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