Non-Final Rejection
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . This application was filed with claims 1-20, which are pending.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claims 1, 19, and 20 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by JP H09-116223 (“JP ‘223”).
Regarding claim 1, JP ‘223 discloses in Fig. 4, discussion starting at [0038], a surface emitting laser element comprising: a first structure (at bottom of Fig.) including a first multilayer film reflector 50; a second structure (at top of Fig.) including a second multilayer film reflector 51; and a resonator disposed between the first and second structures, wherein the resonator includes an active layer 53 in which at least a light emitting region is disposed between the first and second multilayer film reflectors, and the second structure is provided with a field effect transistor 42-47 ([0047]-[0049) that controls injection of a current into the light emitting region.
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Regarding claim 19, an ion implantation region 52 is formed in the first mirror and the resonator. [0040]. A person skilled in the art would understand this is a carrier confinement portion. See [0026].
Regarding claim 20, there are separate power supplies for driving the laser and for driving the FET. For example, JP ‘223 applies different voltages set for the drain and the gate so that the FET can modulate the laser. [0050].
Claims 1, 19, and 20 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by US 5,283,447 (“Olbright”).
Regarding claim 1, Olbright discloses in Figs. 10-12, discussion starting at col. 7 lines 28, a surface emitting laser element comprising: a first structure (at bottom of Fig. 11) including a first multilayer film reflector 345; a second structure (at top of Fig. 11) including a second multilayer film reflector 341; and a resonator disposed between the first and second structures, wherein the resonator includes an active layer 343 in which at least a light emitting region is disposed between the first and second multilayer film reflectors, and the second structure is provided with a field effect transistor 316 that controls injection of a current into the light emitting region.
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Regarding claim 19, a confinement region 343’ is formed in the resonator. A person skilled in the art would understand this is a carrier confinement portion.
Regarding claim 20, there are separate power supplies for driving the laser and for driving the FET. For example, Olbright applies different voltages set for the drain and the gate. See Fig. 12 and discussion col. 8 lines 13-28.
Allowable Subject Matter
Claims 2-18 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. There is not taught or disclosed in the prior art a surface emitting laser as claimed where a structure including a multilayer film reflector is provided with a field effect transistor that controls current injection, and wherein the field effect transistor includes: a drain region provided at a position of the second structure corresponding to the light emitting region; and a source region of the second structure provided around the drain region.
Conclusion
A number of references showing VCSELs integrated with transistors are cited.
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/JAMES A MENEFEE/ Primary Examiner, Art Unit 2828
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