DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Allowable Subject Matter
Claims 1-14 are allowed.
The following is an examiner’s statement of reasons for allowance: Prior art does not teach or render obvious “a contact provided on the first well, spaced apart from the heavily doped region by 0.2 um to 2.5 um, and having the first conductivity type” in combination with the rest of the claim.
Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.”
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claim(s) 15 and claims bellow are rejected under 35 U.S.C. 102(a)(1) as being anticipates by Bose “Parametric Study of p-n Junctions and Structures for CMOS-Integrated Single-Photon Avalanche Diodes”, IEEE SENSORS JOURNAL, VOL. 18, NO. 13, JULY 1, 2018.
Regarding claim 15 Bose teaches
15. (New) A single photon detector comprising:
a first well(fig. 1a dnw) having a first conductivity type(n conductivity);
a second well(nw) provided on the first well(dnw);
a heavily doped( p+) region provided on the second well(nw) and having a second conductivity type(p conductivity) different from the first conductivity type(n conductivity);
a guard ring(nw ring ) in contact with a side surface of the heavily doped region(p+ ) and extending along a side surface of the second well(nw contact through STI and pwell);
a contact provided(small contact p+) on an opposite side of the heavily doped region with respect to the guard ring(nw), spaced apart from the guard ring;(fig. 1A) and
a relief region(substrate) provided on the first well(dnw) and surrounding a bottom surface and one side surface of the contact; (fig. 1a)
wherein the guard ring(nw part of the guard ring ) has the same conductivity type as the second well(nw). (fig. 1a)
17. (New) The single photon detector of claim 15, further comprising an isolation region(STI) provided on an opposite side of the guard ring with respect to the contact and in contact with one side surface of the contact. (fig. 1A or 1B)
18. (New) The single photon detector of claim 15, wherein the heavily doped region protrudes from a side surface of the second well. (fig. 1a)
20. (New) The single photon detector of claim 18, further comprising an isolation(second STI between NW and pwell) region provided on an opposite side of the guard ring with respect to the contact.(fig. 1a)
Claim Rejections – 35 USC § 103
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
Claim(s) 16, 19, 20 is/are rejected under 35 U.S.C. 103 as being unpatentable over Boss.
Although Boss does not explicitly teach
16. (New) The single photon detector of claim 15, wherein one side surface of the contact is in contact with the first well, and a bottom surface of the contact is in contact with the relief region.
19. (New) The single photon detector of claim 18, wherein one side surface of the contact is in contact with the first well, and a bottom surface of the contact is in contact with the relief region.
It is just a matter of design choice as it does not give any advantages and can contact it with isolation layer for example for easy construction purpose in some cases.
Conclusion
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/HOVHANNES BAGHDASARYAN/Examiner, Art Unit 3645