Prosecution Insights
Last updated: October 02, 2026
Application No. 18/346,098

FIDUCIALS WITH UNDERLYING DUMMY METALLIZATION FOR INTEGRATED CIRCUIT DEVICE ALIGNMENT

Non-Final OA §102
Filed
Jun 30, 2023
Examiner
ANYA, IGWE U
Art Unit
Tech Center
Assignee
Intel Corporation
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
81%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allowance Rate
817 granted / 961 resolved
+25.0% vs TC avg
Minimal -4% lift
Without
With
+-3.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
26 currently pending
Career history
970
Total Applications
across all art units

Statute-Specific Performance

§101
1.4%
-38.6% vs TC avg
§103
51.1%
+11.1% vs TC avg
§102
36.6%
-3.4% vs TC avg
§112
6.9%
-33.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 961 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 2 and 8 – 11 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Kumagai et al. (US 2015/0108611). PNG media_image1.png 463 701 media_image1.png Greyscale ( Claim 1) Kumagai et al. teach an apparatus comprising: an integrated circuit device, the integrated circuit device comprising: a first layer (M4/M5) with an area comprising metallization (shaded) and metal-free slits (non-shaded between shaded); and a fiducial (3, alignment marker, paragraph 107) in a second layer (La) above the first layer (M5), the fiducial (3) formed over the area comprising the metallization and metal-free slits. (Claim 2) Kumagai et al. teach wherein the metal-free slits are parallel to each other (fig. 3). (Claim 8) Kumagai et al. teach wherein the fiducial (fig. 5 #3) has an annular shape. (Claim 9) Kumagai et al. teach wherein a width of the fiducial (fig. 5 #3) is greater than a width of a strip (fig. 5 #5) of the metallization. (Claim 10) Kumagai et al. teach wherein the first layer is a bonding layer of the integrated circuit device (#27, paragraph 119). (Claim 11) Kumagai et al. teach wherein the second layer is a metal interconnect layer of the integrated circuit device (#La, paragraph 112). Claims 1, 3, 12 – 14 and 18 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Niazi et al. (US 2024/0063136). PNG media_image2.png 320 447 media_image2.png Greyscale ( Claim 1) Niazi et al. teach an apparatus (figs. 1, 2) comprising: an integrated circuit device, the integrated circuit device comprising: a first layer (fig.2 #212) with an area comprising metallization and metal-free slits (112); and a fiducial (108) in a second layer above the first layer, the fiducial (fig. 1 #108) formed over the area comprising the metallization (104) and metal-free slits (112). (Claim 3) Niazi et al. teach wherein the metal-free slits have a common pitch between adjacent metal-free slits (paragraph 53). (Claim 12) Niazi et al. teach the apparatus, further comprising a printed circuit board (fig. 16 #1604, paragraph 37) attached to the first integrated circuit device (1602). (Claim 13) Niazi et al. teach the apparatus, further comprising a second integrated circuit device (1603) coupled to the printed circuit board (1604). (Claim 14) Niazi et al. teach a system (fig. 15) comprising: a printed circuit board (1504, paragraph 37); and a package (1902) coupled to the printed circuit board, the package comprising a first integrated circuit device comprising: dummy metallization (1924 paragraph 155, analogous to fig. 1 #104) on a first layer and metal-free slits (fig. 1 #112) between segments of the dummy metallization; and a fiducial (1514, 1512, figs. 1, 2 #108) on a second layer (fig. 2 #212), wherein the fiducial is within a footprint of the metal- free slits (figs. 1, 2, #112). (Claim 18) Niazi et al. teach an apparatus comprising: a plurality of metal lines (fig. 1 #104) defining a plurality of metal-free slits (112) on a layer of an integrated circuit device; and a fiducial (figs. 1, 2 #108) formed within a footprint of the plurality of metal-free slits (112) on a second layer (fig. 2 #212) of the integrated circuit device. Allowable Subject Matter Claims 4 – 7, 15 – 17 and 19 – 20 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. (Claim 4) a second fiducial formed in a fourth layer different from the third layer, the second fiducial formed within a footprint of the second metallization and second metal-free slits. (Claim 15) a second fiducial on a fourth layer, wherein the second fiducial is within a footprint of the second metal-free slits. (Claim 19) a second fiducial formed within a footprint of the second plurality of metal-free slits on a fourth layer of the second integrated circuit device, wherein the second plurality of metal-free slits are orthogonal to the plurality of metal-free slits. Conclusion Prior art made of record and not relied upon, considered pertinent to applicant's disclosure are listed in PTO – 892 Form. Contact Information Any inquiry concerning this communication or earlier communications from the examiner should be directed to IGWE U ANYA whose telephone number is (571)272-1887. The examiner can normally be reached 8:00 AM - 6:00 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Matthew Landau can be reached at (571) 272- 1731. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /IGWE U ANYA/Primary Examiner, Art Unit 2891 August 8, 2026
Read full office action

Prosecution Timeline

Jun 30, 2023
Application Filed
Nov 15, 2023
Response after Non-Final Action
Aug 12, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12745411
SEMICONDUCTOR DEVICE
3y 0m to grant Granted Sep 22, 2026
Patent 12740076
INTEGRATED CIRCUIT DEVICE
3y 0m to grant Granted Sep 15, 2026
Patent 12740391
CONTACT STRUCTURE, SEMICONDUCTOR DEVICE WITH THE SAME, AND METHOD FOR FABRICATING THE SAME
2y 5m to grant Granted Sep 15, 2026
Patent 12733206
VERTICAL SHIELDED GATE ACCUMULATION FIELD EFFECT TRANSISTOR
3y 6m to grant Granted Sep 08, 2026
Patent 12733417
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
2y 7m to grant Granted Sep 08, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
81%
With Interview (-3.7%)
2y 6m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 961 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month