Prosecution Insights
Last updated: April 19, 2026
Application No. 18/358,239

RESISTIVE-NETWORK CELL REGION, BUILT-IN SELF-TESTER INCLUDING SAME, SEMICONDUCTOR DEVICE INCLUDING SAME, METHOD OF OPERATING SAME AND METHOD OF MANUFACTURING SAME

Non-Final OA §102
Filed
Jul 25, 2023
Examiner
MAHONEY, CHRISTOPHER E
Art Unit
2852
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Tsmc China Company Limited
OA Round
1 (Non-Final)
83%
Grant Probability
Favorable
1-2
OA Rounds
2y 1m
To Grant
95%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allow Rate
888 granted / 1071 resolved
+14.9% vs TC avg
Moderate +12% lift
Without
With
+11.8%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 1m
Avg Prosecution
14 currently pending
Career history
1085
Total Applications
across all art units

Statute-Specific Performance

§101
1.5%
-38.5% vs TC avg
§103
40.7%
+0.7% vs TC avg
§102
35.0%
-5.0% vs TC avg
§112
14.1%
-25.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1071 resolved cases

Office Action

§102
DETAILED ACTION Priority Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55. Election/Restrictions Applicant’s election without traverse of Group I, claims 1-10 in the reply filed on October 14, 2025 is acknowledged. Claim Objections Claim 28 is objected to because of the following informalities: In claim 28, the examiner believes “and resistor” is supposed to be “and the resistor”. Appropriate correction is required. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1 and 6 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Schat (U.S. Patent No. 10823781). Schat teaches a built-in self-tester (BIST) of a semiconductor device comprising: an input/output (I/O) circuit (440) including an output buffer (444) and an input buffer (446), an output of the output buffer being coupled at a I/O terminal to an input of the input buffer (see fig. 4A), the I/O terminal being configured to receive or provide an external I/O signal (inherent to I/O line, fig. 4A has I/O line);one or more resistive-network cell regions (448-450) arranged to affect a reference current received at the I/O terminal; and a switching arrangement (455/456) configured to selectively couple the one or more resistive-network cell regions alternatively to a first reference voltage (pull up voltage for 448 or pull down voltage for 450) during a first phase or a second reference voltage (0V output when pull up/down resistor is activated., see col. 11, lines 64 through col. 12, line 7.) during a second phase, the switching arrangement being further configured to determine electrostatic discharge (ESD) damage (col. 5, lines 24-25 and col. 14, lines 15-17 teach damage is due to ESD) included in the semiconductor device based on (1) phase (second phase) and (2) an output signal of the input buffer (ZI, see tables 1, 2 and 4). The claim language to metal-oxide-semiconductor (MOS) transistors is considered an intended use and is not being given patentable weight. Regarding claim 6, Schat teaches operating a built-in self-tester (BIST) of a semiconductor device,the BIST including an input/output (I/O) circuit 441 and one or more resistive-network cell regions 448/450, the I/O circuit including an output buffer 444 and an input buffer 446, an output of the output buffer being coupled at a I/O terminal to an input of the input buffer (fig. 4A), the I/O terminal being configured to receive or provide an external I/O signal (inherent to I/O line, fig. 4A has I/O line), and the one or more resistive-network cell regions being arranged to affect a reference current received at the I/O terminal, and the method comprising: selectively coupling the one or more resistive-network cell regions alternatively to a first reference voltage during a first phase or a second reference voltage during a first second phase (col. 11, lines 65-67 “first charging the (parasitic) I/O capacitance by setting the driver 444 to 0, then charging it by activating the pull-up resistor 448”); and determining electrostatic discharge (ESD) damage (col. 5, lines 24-25 and col. 14, lines 15-17 teach damage is due to ESD) included in the semiconductor device based on (1) phase and (2) an output signal generated by the input buffer (ZI, see tables 1, 2 and 4). The claim language to metal-oxide-semiconductor (MOS) transistors is considered an intended use and is not being given patentable weight. Allowable Subject Matter Claims 2-5, 7-10, 21-27 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Claims 28-30 are allowed. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Motika (U.S. Publication No. 2021/0156911) teaches a built in self test which controls/observes logic network resistance to pseudo-random fault detection. Any inquiry concerning this communication or earlier communications from the examiner should be directed to CHRISTOPHER E MAHONEY whose telephone number is (571)272-2122. The examiner can normally be reached 9-5:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Stephanie Bloss can be reached at 571-272-3555. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /CHRISTOPHER E MAHONEY/Primary Examiner, Art Unit 2852
Read full office action

Prosecution Timeline

Jul 25, 2023
Application Filed
Jan 26, 2024
Response after Non-Final Action
Apr 25, 2024
Response after Non-Final Action
Feb 15, 2026
Non-Final Rejection — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
83%
Grant Probability
95%
With Interview (+11.8%)
2y 1m
Median Time to Grant
Low
PTA Risk
Based on 1071 resolved cases by this examiner. Grant probability derived from career allow rate.

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