Prosecution Insights
Last updated: July 17, 2026
Application No. 18/400,049

NON-VOLATILE MEMORY DEVICE AND RECOVERY METHOD OF NON-VOLATILE MEMORY DEVICE

Non-Final OA §102
Filed
Dec 29, 2023
Priority
Jan 17, 2023 — RE 10-2023-0006955 +1 more
Examiner
TRAN, MICHAEL THANH
Art Unit
2827
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
3 (Non-Final)
96%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 96% — above average
96%
Career Allowance Rate
1445 granted / 1509 resolved
+27.8% vs TC avg
Minimal +0% lift
Without
With
+0.4%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 7m
Avg Prosecution
30 currently pending
Career history
1531
Total Applications
across all art units

Statute-Specific Performance

§101
2.0%
-38.0% vs TC avg
§103
19.7%
-20.3% vs TC avg
§102
48.2%
+8.2% vs TC avg
§112
1.6%
-38.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1509 resolved cases

Office Action

§102
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . DETAILED ACTION In response to the Communications dated April 2, 2026, claims 1-20 are active in this application. Specification If there are cross-reference to related applications, please include the respective patent numbers, if known. Claim Objections Claims 2-12 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Claim Rejections- 35 U.S.C. § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Yun [US. Patent Application # 20150318045]. With respect to claim 1, Yun discloses a non-volatile memory device [figs. 1-4 and 7] comprising: a memory block [any BLK1-BLKZ within 110] including a plurality of cell strings [CS11-CS31] including a plurality of string selection transistors [respective SST’s] and a plurality of memory cells [MC1-MC8], a first string selection line [SSL1] connected to a string selection transistor of a first cell string of the plurality of cell strings, and a second string selection line [SSL2] connected to a string selection transistor of a second cell string of the plurality of cell strings; and a control circuit [150] configured to control a recovery operation [RECOVERY period] to apply a recovery voltage with different drive strengths to the first string selection line [for SEL SSL linear decrease from plateau of Vssl to GND] and the second string selection line [GND] in a recovery period [RECOVERY period]. Allowable Subject Matter Claims 13-20 are allowable over the prior art of record. The following is an Examiner's statement of reasons for the indication of allowable subject matter: the prior art of records does not show (in addition to the other elements in the claim) the following: -with respect to claim 13, applying the string selection turn-on voltage to the first string selection line and the second string selection line; counting a period of a voltage of the first string selection line being less than or equal to a first reference voltage; and applying a recovery voltage with different drive strengths to the first string selection line and the second string selection line based on a time length of the period in a recovery period. -with respect to claim 18, a plurality of second selection gate electrodes on the conductive pattern; and a plurality of second channel structures that penetrate the plurality of second selection gate electrodes and extend in the first direction and thus widths of the plurality of second selection gate electrodes in a second direction that crosses the first direction are different from each other, wherein the plurality of second selection gate electrodes are applied with a same voltage with different drive strengths in a recovery period. Conclusion For applicant’s benefit portions of the cited reference(s) have been cited to aid in the review of the rejection(s). While every attempt has been made to be thorough and consistent within the rejection it is noted that the PRIOR ART MUST BE CONSIDERED IN ITS ENTIRETY, INCLUDING DISCLOSURES THAT TEACH AWAY FROM THE CLAIMS. See MPEP 2141.02 VI. When responding to the Office action, Applicants are advised to provide the Examiner with line and page numbers of the application and/or references cited to assist the Examiner in the prosecution of this case. Any inquiry concerning this communication or earlier communications from the Examiner should be directed to Michael T. Tran whose telephone number is (571) 272-1795. Interview agendas may be emailed to Michael.tran@uspto.gov. The Examiner can normally be reached on Monday-Thursday from 6:00AM-4:30 P.M. Any inquiry of a general nature or relating to the status of this application. should be directed to the Group receptionist whose telephone number is (571) 272-1650. /MICHAEL T TRAN/Primary Examiner, Art Unit 2827 May 17, 2026
Read full office action

Prosecution Timeline

Show 5 earlier events
Oct 23, 2025
Response Filed
Feb 02, 2026
Final Rejection mailed — §102
Feb 18, 2026
Interview Requested
Apr 02, 2026
Response after Non-Final Action
May 20, 2026
Non-Final Rejection mailed — §102
Jun 11, 2026
Interview Requested
Jun 18, 2026
Applicant Interview (Telephonic)
Jun 18, 2026
Examiner Interview Summary

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12682967
OPERATING METHOD OF MEMORY DEVICE
2y 1m to grant Granted Jul 14, 2026
Patent 12676171
SEMICONDUCTOR MEMORY DEVICE
1y 11m to grant Granted Jul 07, 2026
Patent 12666606
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
3y 6m to grant Granted Jun 23, 2026
Patent 12666623
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
2y 2m to grant Granted Jun 23, 2026
Patent 12665013
MEMORY DEVICES INCLUDING MECHANISM OF PROTECTING A VULNERABLE WORD LINE BASED ON THE PREVIOUS REFRESHED WORD LINES AND RELEVANT METHODS
1y 10m to grant Granted Jun 23, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
96%
Grant Probability
96%
With Interview (+0.4%)
1y 7m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 1509 resolved cases by this examiner. Grant probability derived from career allowance rate.

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