Prosecution Insights
Last updated: April 19, 2026
Application No. 18/439,492

SUBSTRATE SUPPORTER

Non-Final OA §102
Filed
Feb 12, 2024
Examiner
WILSON, LEE D
Art Unit
3723
Tech Center
3700 — Mechanical Engineering & Manufacturing
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
80%
Grant Probability
Favorable
1-2
OA Rounds
2y 11m
To Grant
98%
With Interview

Examiner Intelligence

Grants 80% — above average
80%
Career Allow Rate
1458 granted / 1824 resolved
+9.9% vs TC avg
Strong +19% interview lift
Without
With
+18.6%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
34 currently pending
Career history
1858
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
25.7%
-14.3% vs TC avg
§102
48.9%
+8.9% vs TC avg
§112
19.9%
-20.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1824 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-9 and 12-20 is/are rejected under 35 U.S.C. 102(a1) as being anticipated by Boyd jr. et al. 2019/0111541 A1. Boyd jr. et al discloses the claimed invention as recited in the claims as shown below: 1. A substrate supporter including an upper surface on which a substrate is loaded, comprising: a base 125; an outer dam 203 extending along an edge of the base; a contact band 213 & 215 connected with the outer dam, the contact band extending along a circumferential direction of the base, wherein the substrate is loaded onto the contact band; and a first contact pattern 217 disposed adjacent to the contact band and extending into an inside of the contact band, the first contact pattern extending along the circumferential direction of the base, wherein an area of the first contact pattern is larger than an area where the contact band overlaps with the substrate. 2. The substrate supporter of claim 1, wherein: the contact band includes an overlapping region 201 that overlaps the substrate, the overlapping region and the first contact pattern both have a ring shape, and a width of the first contact pattern along a radial direction of the base is greater than a width of the overlapping region along the radial direction of the base. 3. The substrate supporter of claim 1, wherein: the first contact pattern includes a plurality of first sub-contact patterns that are spaced apart along the circumferential direction of the base. See Fig.2B 4. The substrate supporter of claim 3, wherein: each first sub-contact pattern of the plurality of first sub-contact patterns has a circular shape on a plane. See Fig.2A shows circular shape looking down from the top view 5. The substrate supporter of claim 1, wherein: a height at which the contact band protrudes from an upper surface of the base is a same as a height at which the first contact pattern protrudes from the upper surface of the base. See Fig.2B shows all structure at the same height 6. The substrate supporter of claim 1, wherein: the base includes an inner region and an outer region surrounding the inner region, the contact band and the first contact pattern are disposed in the outer region, and a radius of the inner region is 4/5 to 14/15 of a radius of the base. This is a small region which is shown. PNG media_image1.png 910 844 media_image1.png Greyscale 7. The substrate supporter of claim 1, comprising: a second contact pattern 223 disposed adjacent to the first contact pattern and extending into an inside of the first contact pattern, the second contact pattern extending along the circumferential direction of the base, and an area of the second contact pattern is more than 30% and less than 100% of the area where the contact band overlaps with the substrate. PNG media_image2.png 856 842 media_image2.png Greyscale 8. The substrate supporter of claim 7, wherein: at least one contact pattern of the first contact pattern or the second contact pattern has a ring shape. See 2A and 2B 9. The substrate supporter of claim 7, wherein: the second contact pattern includes a plurality of second sub-contact patterns that are spaced apart along the circumferential direction of the base. 223 is spaced apart PNG media_image2.png 856 842 media_image2.png Greyscale 12. The substrate supporter of claim 1, wherein: the contact band and the first contact pattern include aluminum nitride. See par.0012 which discloses the use of Aluminum nitride AIN 13. A substrate supporter including an upper surface on which a substrate is loaded, comprising: a base 125 including an inner region and an outer region surrounding the inner region; an outer dam 203 extending along an edge of the base; a plurality of inner contact patterns 217 equally spaced apart in the inner region; a contact band 213 connected with the outer dam and extending along a circumferential direction of the base, the contact band disposed in the outer region, and the substrate being loaded onto the contact band; and a first contact pattern disposed adjacent to the contact band and extending into an inside of the contact band, the first contact pattern extending along the circumferential direction of the base, the first contact pattern disposed in the outer region, and an area of the first contact pattern is larger than an area where the contact band overlaps with the substrate. 14. The substrate supporter of claim 13, comprising: a second contact pattern disposed on an inner side of the first contact pattern, the second contact pattern disposed in the outer region and extending along the circumferential direction of the base. See Fig.2A 15. The substrate supporter of claim 14, wherein: an area of the second contact pattern is more than 30% and less than 100% of the area where the contact band overlaps with the substrate. PNG media_image2.png 856 842 media_image2.png Greyscale 16. The substrate supporter of claim 14, wherein: at least one contact pattern of the first contact pattern or the second contact pattern has a ring shape on a plane. See Fig.2A 17. The substrate supporter of claim 13, wherein: the substrate supporter includes a constant voltage electrode, the constant voltage electrode embedded in the base and configured to generate an electrostatic force between the substrate supporter and the substrate. See par.0003 18. A substrate supporter including an upper surface on which a substrate is loaded, comprising: a base 125; an outer dam 203 extending along an edge of the base; a contact band 213 connected with the outer dam , the contact band extending along a circumferential direction of the base, wherein the substrate is loaded onto the contact band; a first contact pattern disposed adjacent to an inside of the contact band and extending along the circumferential direction of the base; and a second contact pattern 221 disposed adjacent to an inside of the first contact pattern and extending along the circumferential direction of the base, wherein the first contact pattern is disposed between the outer dam and the second contact pattern, and a ratio of an area where the first contact pattern is in contact with the substrate to an entire area of the substrate is greater than a ratio of an area where the contact band is in contact with the substrate to the entire area of the substrate. 19. The substrate supporter of claim 18, wherein: an area where the second contact pattern is in contact with the substrate is more than 30% and less than 100% of an area where the contact band overlaps with the substrate. PNG media_image2.png 856 842 media_image2.png Greyscale 20. The substrate supporter of claim 19, wherein: at least one contact pattern of the first contact pattern or the second contact pattern has a ring shape on a plane. See Fig 2.A Allowable Subject Matter Claims 10-11 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: The Fig.7 shows a second pattern being rectangular 242 , larger circle 241P and smaller circles 220 all on the inner section. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. The 892 form discloses prior art being made of record. Any inquiry concerning this communication or earlier communications from the examiner should be directed to LEE D WILSON whose telephone number is (571)272-4499. The examiner can normally be reached M-TH 6;30-4;30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, BRIAN KELLER can be reached at 571-272-8548. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. LEE D. WILSON Examiner Art Unit 3723 Ldw /LEE D WILSON/Primary Examiner, Art Unit 3723 January 26, 2026
Read full office action

Prosecution Timeline

Feb 12, 2024
Application Filed
Jan 29, 2026
Non-Final Rejection — §102
Apr 07, 2026
Applicant Interview (Telephonic)
Apr 07, 2026
Examiner Interview Summary

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
80%
Grant Probability
98%
With Interview (+18.6%)
2y 11m
Median Time to Grant
Low
PTA Risk
Based on 1824 resolved cases by this examiner. Grant probability derived from career allow rate.

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