DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Priority
Acknowledgment is made of applicant's claim for foreign priority based on an application filed in China on 10/27/2022. It is noted, however, that applicant has not filed a certified copy of the 202211323483.X application as required by 37 CFR 1.55.
Information Disclosure Statement
The information disclosure statement (IDS) submitted on 08/08/2023 is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner.
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 1-10 rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Claim 1 recited “(A) growing epitaxially a single crystal material layer on a substrate, wherein for a N-type metal oxide semiconductor (NMOS) device, a lattice constant of a heavily-doped active region material is greater than that of a lightly-doped channel layer; and for a P-type metal oxide semiconductor (PMOS) device, a lattice constant of a heavily-doped active region material is less than that of a lightly-doped channel layer; forming a laminate consisting of a bottom source-drain material and a channel material; and generating a vertical uniaxial stress in the lightly-doped channel layer through lattice mismatch” and the examiner is confused if a lightly-doped channel layer of NMOS is same as a lightly-doped channel layer of PMOS or two different lightly-doped channel layers. If a lightly-doped channel layer is two different channel layer than the examiner is confused which lightly-doped channel layer has a vertical uniaxial stress through lattice mismatch.
Claim 9 recited “(I3) filling the source contact hole, the drain contact hole, and the gate contact hole with metal 0; and (I4) performing CMP on the metal 0 to separate conductive layers of devices, so as to realize device isolation” and the examiner is confused what is “0” oxygen or oxide or number zero? Therefore, claim 9 is indefinite.
Claim 2-10 depends on independent claim 1, so they are rejected for the same reason.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant’s disclosure:
Li et al. (US Patent Appl. Pub. No. 2020/0105875 A1).
Any inquiry concerning this communication or earlier communications from the examiner should be directed to KYOUNG LEE whose telephone number is (571)272-1982. The examiner can normally be reached M to F, 10am to 6pm.
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/KYOUNG LEE/Primary Examiner, Art Unit 2817