Prosecution Insights
Last updated: August 18, 2026
Application No. 18/475,673

METHOD FOR MANUFACTURING VIBRATOR

Non-Final OA §102§112
Filed
Sep 27, 2023
Priority
Sep 29, 2022 — JP 2022-155985
Examiner
NGUYEN, DONGHAI D
Art Unit
Tech Center
Assignee
Seiko Epson Corporation
OA Round
1 (Non-Final)
75%
Grant Probability
Favorable
1-2
OA Rounds
1m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 75% — above average
75%
Career Allowance Rate
672 granted / 892 resolved
+15.3% vs TC avg
Strong +29% interview lift
Without
With
+29.2%
Interview Lift
resolved cases with interview
Typical timeline
3y 0m
Avg Prosecution
15 currently pending
Career history
909
Total Applications
across all art units

Statute-Specific Performance

§101
0.6%
-39.4% vs TC avg
§103
49.6%
+9.6% vs TC avg
§102
30.0%
-10.0% vs TC avg
§112
18.3%
-21.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 892 resolved cases

Office Action

§102 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-6 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. “preparing a quartz substrate” (claim 1, lines 8-9) is vague and indefinite because it is unclear as to how to prepare a quartz crystal substrate (i.e. how or in what manner is it prepared). Claims 5-6 are confusing because the claim 1 is a method claim in which claims 5-6 are depended thereon; however, claims 5-6 fail to disclose any additional method step to further define the claimed invention but only recites the structure of the vibrator of claim 1 without any method steps to obtain such structures such as “an angular velocity detection element”, “pair of support arms”, etc., Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-6 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by U.S. Patent 8,156,621 to Iwai. Regarding claim 1, Iwai et al disclose a method for manufacturing a vibrator (see Fig. 1), the vibrator including a first vibration arm that has a first surface and a second surface which are in a front and back relationship (see Fig. 1a) and that has a bottomed first groove opened in the first surface, and a second vibration arm that has a bottomed second groove opened in the first surface, the method comprising: a preparation step of preparing a quartz crystal substrate (10) having the first surface and the second surface; a first film formation step of forming a first stacked body (32-36) by sequentially stacking a first underlying film, a second underlying film (see Step S112), and a first protective film (36) at the first surface (see Fig. 4b); a first patterning step of patterning the first stacked body in a manner in which the first underlying film, the second underlying film, and the first protective film remain in a region of an element formation region other than a first groove formation region and a second groove formation region, the first underlying film and the second underlying film remain in the first groove formation region, and the first underlying film remains in the second groove formation region, when a region of the quartz crystal substrate where the vibrator is formed is referred to as the element formation region, a region where the first groove is formed is referred to as the first groove formation region, and a region where the second groove is formed is referred to as the second groove formation region (see Fig. 5i); and a first dry etching step of dry etching the quartz crystal substrate from the first surface through the first stacked body (see Fig. 5j). Regarding claim 2, Iwai discloses the first stacked body in the second groove formation region and the first stacked body in the first groove formation region sequentially disappear in the first dry etching step, and the dry etching is started in order of a removal region other than the element formation region, the second groove formation region, and the first groove formation region (see Fig. 5k). Regarding claim 3, Iwai discloses at least one of the first underlying film and the second underlying film is a metal film (Cr/Au). Regarding claim 4, Iwai discloses the vibrator has a bottomed third groove opened in the second surface of the first vibration arm and a bottomed fourth groove opened in the second surface of the second vibration arm (see Fig. 1), and the method of forming the bottom third and four grooves are the same as disclosed in claim 1. Regarding claims 5-6, Iwai discloses all the limitations because claims 5-6 do not disclose any additional steps. Therefore, the manufacturing steps in claim 1 would result in forming the structures of claims 5-6. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. U.S. Patent 5,738,757 to Burns et al disclose method of etching the substrate using multiple layer mask. U.S. Patent 7,861,387 to Hokibara et al disclose a method of forming a PZ resonator. Any inquiry concerning this communication or earlier communications from the examiner should be directed to DONGHAI D NGUYEN whose telephone number is (571)272-4566. The examiner can normally be reached M-F 9:00-5:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Thomas J. Hong can be reached at 571-272-0993. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DN/ /DONGHAI D NGUYEN/July 25, 2026 Primary Examiner, Art Unit 3729
Read full office action

Prosecution Timeline

Sep 27, 2023
Application Filed
Jul 30, 2026
Non-Final Rejection mailed — §102, §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
75%
Grant Probability
99%
With Interview (+29.2%)
3y 0m (~1m remaining)
Median Time to Grant
Low
PTA Risk
Based on 892 resolved cases by this examiner. Grant probability derived from career allowance rate.

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