Prosecution Insights
Last updated: April 19, 2026
Application No. 18/499,716

Method for Producing a Detachment Region in a Solid-state Body

Non-Final OA §112
Filed
Nov 01, 2023
Examiner
KERR, ELIZABETH M
Art Unit
3761
Tech Center
3700 — Mechanical Engineering & Manufacturing
Assignee
Siltectra GmbH
OA Round
1 (Non-Final)
64%
Grant Probability
Moderate
1-2
OA Rounds
3y 9m
To Grant
96%
With Interview

Examiner Intelligence

Grants 64% of resolved cases
64%
Career Allow Rate
175 granted / 274 resolved
-6.1% vs TC avg
Strong +32% interview lift
Without
With
+31.7%
Interview Lift
resolved cases with interview
Typical timeline
3y 9m
Avg Prosecution
32 currently pending
Career history
306
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
50.2%
+10.2% vs TC avg
§102
14.1%
-25.9% vs TC avg
§112
28.5%
-11.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 274 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statements (IDS) submitted on 11/1/223, 3/19/2025, 3/25/2025, 6/2/2025, 7/30/2025, and 10/7/2025 have been considered by the examiner. Specification The lengthy specification has not been checked to the extent necessary to determine the presence of all possible minor errors. Applicant’s cooperation is requested in correcting any errors of which applicant may become aware in the specification. Claim Interpretation Claim 1 recites, "providing a solid body that consists of a chemical compound, the chemical compound comprising a combination of elements from the 3rd, 4th and 5th main group and subgroup 12 of the Periodic Table of the Elements." The recited groups and subgroup are interpreted as follows: the 3rd main group is interpreted as consisting of the elements B, Al, Ga, In, Tl, and Nh; the 4th main group is interpreted as consisting of the elements C, Si, Ge, Sn, Pb, and Fl; the 5th main group is interpreted as consisting of the elements N, P, As, Sb, Bi, and Mc; and subgroup 12 is interpreted as consisting of the elements Zn, Cd, Hg, and Cn. Claim 1 recites, “wherein the crystal lattice, as a result of the modifications, fissures in a subcritical manner,” and also recites, “the subcritical fissures.” The term “subcritical” is interpreted as described in Applicant’s filed specification at paragraph [0015], which states, “[s]ubcritical means here that the fissure propagation comes to rest or stops before the fissure splits the solid into at least two parts.” Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1 – 10 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 1 recites, "providing a solid body that consists of a chemical compound, the chemical compound comprising a combination of elements from the 3rd, 4th and 5th main group and subgroup 12 of the Periodic Table of the Elements." It is unclear whether the combination of elements must include (A) an element from the 3rd main group, and an element from the 4th main group, and an element from the 5th main group, and an element from subgroup 12, or (B) an element from the 3rd main group or the 4th main group or the 5th main group, and an element from subgroup 12. Examiner is interpreting as described in (B). Claims 2 – 10 are rejected by virtue of their dependence on claim 1. Claims 7, 9, and 10 are rejected as being indefinite for the following reason: claim 1 recites, "providing a solid body that consists of a chemical compound ...." The phrase "consists of" is interpreted as excluding any element not specified in the claim. MPEP 2111.03-II. However, claims 7, 9, and 10 recite, "wherein the solid body comprises ...." The term "comprises" is interpreted as being open-ended and does not exclude additional, unrecited elements. MPEP 2111.03-I. Therefore, use of the term "comprises" in claims 7, 9, and 10, which indicates that the solid body can include additional elements beyond those recited in the respective claims, contradicts the interpretation that the solid body as recited in claim 1 excludes any not specified in the claim. Applicant may wish to instead recite the following in claims 7, 9, and 10, respectively, if these are the intended meanings: Claim 7: The method of claim 1, wherein the chemical compound is silicon carbide. Claim 9. The method of claim 8, wherein the conversion of matter comprises a breakdown of the chemical compound into several or all of its individual constituents and/or elements. Claim 10. The method of claim 9, wherein the wherein the chemical compound is silicon carbide, and wherein the conversion of matter results in Si (silicon) and DLC (diamond-like carbon) phases. Allowable Subject Matter Claims 1 – 10 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. The prior art of record does not teach, disclose, or suggest the method of claim 1, which requires: providing a solid body that consists of a chemical compound, the chemical compound comprising a combination of elements from the 3rd, 4th and 5th main group and subgroup 12 of the Periodic Table of the Elements; providing a laser light source; and exposing the solid body to laser beams from the laser light source, wherein the laser beams penetrate into the solid body via a main surface of the solid body, wherein the laser beams are applied in a defined manner on a predefined portion of the solid body within the solid body to form a detachment region, wherein the application of the laser beams successively creates multiple modifications in a crystal lattice of the solid body; wherein the crystal lattice, as a result of the modifications, fissures in a subcritical manner at least in a portion in each case in regions that surround the modifications, wherein the subcritical fissures propagate mainly in a plane which is parallel or in a defined alignment and essentially parallel with respect to the main surface, wherein the subcritical fissures in the region of the modifications define the detachment region or multiple partial detachment regions, wherein the subcritical fissures join to form a main fissure, and wherein the main fissure separates a solid layer from the solid body. Kunishi et al. (US 2013/0312460) is directed to a manufacturing method of a single crystal substrate and with an internal modified layer. Kunishi discloses applying laser energy (Fig. 3, laser beams B) to a single crystal substrate, (Fig. 1, single crystal member 11), such as SiC [0101], which is a chemical compound comprising a combination of elements from the 3rd, 4th and 5th main group and subgroup 12 of the Periodic Table of the Elements as interpreted above. The laser beam B creates multiple modifications, resulting in “modified layer 12” comprising subcritical fissures / “cracks 12c” [0040]. However, Kunishi does not disclose wherein the subcritical fissures propagate mainly in a plane which is parallel or in a defined alignment and essentially parallel with respect to the main surface, wherein the subcritical fissures join to form a main fissure, and wherein the main fissure separates a solid layer from the solid body. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ELIZABETH KERR whose telephone number is (571)272-3073. The examiner can normally be reached M - F, 8:30 AM - 4:30 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Crabb can be reached at 571-270-5095. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ELIZABETH M KERR/Primary Examiner, Art Unit 3761
Read full office action

Prosecution Timeline

Nov 01, 2023
Application Filed
Jan 23, 2026
Non-Final Rejection — §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
64%
Grant Probability
96%
With Interview (+31.7%)
3y 9m
Median Time to Grant
Low
PTA Risk
Based on 274 resolved cases by this examiner. Grant probability derived from career allow rate.

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