Prosecution Insights
Last updated: April 19, 2026
Application No. 18/517,562

IMAGE SENSORS HAVING HIGH DENSITY SUBPIXELS THEREIN WITH ENHANCED PIXEL SEPARATION STRUCTURES

Non-Final OA §102§103
Filed
Nov 22, 2023
Examiner
WHALEN, DANIEL B
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
80%
Grant Probability
Favorable
1-2
OA Rounds
2y 6m
To Grant
96%
With Interview

Examiner Intelligence

Grants 80% — above average
80%
Career Allow Rate
793 granted / 993 resolved
+11.9% vs TC avg
Strong +16% interview lift
Without
With
+16.0%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
53 currently pending
Career history
1046
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
43.4%
+3.4% vs TC avg
§102
32.3%
-7.7% vs TC avg
§112
17.3%
-22.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 993 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 1-7, 9, 11-13, and 15-20 are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Kim et al. (US 2024/0055458 A1; hereinafter “Kim”). Regarding claim 1, Kim teaches an image sensor, comprising: a substrate (102) having a first surface (102A) and a second surface (102B) opposing the first surface (Fig. 3B and paragraphs 35-37); a first color unit pixel (a color unit pixel CP1 such as a first green color unit pixel) including a first subpixel (Ga1), a second subpixel (Ga3) directly adjacent to the first subpixel in a first direction (a y-direction), a third subpixel (Ga4) directly adjacent to the second subpixel in a second direction (a x-direction) perpendicular to the first direction, and a fourth subpixel (Ga2) directly adjacent to the first subpixel in the second direction and the third subpixel in the first direction (Figs. 2-3A and paragraphs 32-35); a second color unit pixel (another color unit pixel CP1 such as a red color unit pixel) including four subpixels (R1-R4) arranged in a 2×2 matrix (Figs. 2-3A and paragraphs 32-35); a first pixel isolation trench (112) configured to separate the first color unit pixel and the second color unit pixel (Figs. 2-3A and paragraphs 40-41); a second pixel isolation trench (one section of 114 separating Ga1 and Ga3) configured to separate the first subpixel and the second subpixel of the first color unit pixel (Figs. 2-3A and 3C and paragraphs 40-41); and a third pixel isolation trench (118) on a point of intersection of the first to fourth subpixels of the first color unit pixel (Figs. 3A-3B and paragraphs 40-41), wherein the first color unit pixel is configured to detect first color light corresponding to a first wavelength (green light corresponding to a green light wavelength) (Fig. 2 and paragraphs 32-33), wherein the second color unit pixel is configured to detect second color light corresponding to a second wavelength different from the first wavelength (red light corresponding to a red light wavelength) (Fig. 2 and paragraphs 32-33), wherein the image sensor is configured to receive the first color light on the second surface (Fig. 3B and paragraphs 53-58), wherein the second pixel isolation trench extends from the first surface to the second surface (Fig. 3C), and wherein the third pixel isolation trench extends from the second surface to the first surface (Fig. 3B). Regarding claim 2, Kim teaches wherein the second pixel isolation trench penetrates the first surface and the second surface (Fig. 3C), and wherein the third pixel isolation trench is spaced apart from the first surface (Fig. 3B). Regarding claim 3, Kim teaches wherein the first pixel isolation trench penetrates the first surface and the second surface (Fig. 3C), and wherein the first pixel isolation trench connects to the second pixel isolation trench (Figs. 3A and 3D). Regarding claim 4, Kim teaches wherein the third pixel isolation trench is spaced apart from the second pixel isolation trench (Figs. 3A-3D). Regarding claim 5, Kim teaches wherein the second pixel isolation trench has a first length in the second direction (a length of 114 in the x-direction), and wherein the third pixel isolation trench has a second length in the second direction (a length of 118 in the x-direction) shorter than the first length (Figs. 3A-3C). Regarding claim 6, Kim teaches further comprises a fourth pixel isolation trench (one section of 114 separating Ga3 and Ga4) separating the second subpixel and the third subpixel of the first color unit pixel, and wherein the fourth pixel isolation trench is connected to the first pixel isolation trench (Figs. 2-3A and 3C and paragraphs 40-41). Regarding claim 7, Kim teaches further comprises a floating diffusion region (FD) on the first surface, and wherein the floating diffusion region vertically overlaps with the third pixel isolation trench (Figs. 3A-3B and paragraphs 38-39). Regarding claim 9, Kim teaches wherein the first pixel isolation trench includes silicon oxide and metal oxide (paragraph 48). Regarding claim 11, Kim teaches an image sensor, comprising: a substrate (102) having a first surface (102A) and a second surface (102B) opposing the first surface (Fig. 3B and paragraphs 35-37); a first color unit pixel (a color unit pixel CP1 such as a first green color unit pixel) including a plurality of subpixels arranged in a 2×2 matrix in the substrate (Figs. 2-3A and paragraphs 32-35); a second color unit pixel (another color unit pixel CP1 such as a red color unit pixel) including a plurality of subpixels arranged in a 2×2 matrix in the substrate, wherein the second color unit pixel is disposed directly adjacent to the first color unit pixel (Figs. 2-3A and paragraphs 32-35); and a first pixel isolation trench (110) comprising: a first separation structure (112) around the first color unit pixel; a left separation structure (a left-side section of 114 in Fig. 3A) extending from a left boundary of the first color unit pixel to the center of the first color unit pixel; a right separation structure (a right-side section of 114 in Fig. 3A) extending from a right boundary opposing the left boundary of the first color unit pixel to the center of the first color unit pixel; a top separation structure (a top-side section of 114 in Fig. 3A) extending from a top boundary of the first color unit pixel to the center of the first color unit pixel; and a bottom separation structure (a bottom-side section of 114 in Fig. 3A) extending from a bottom boundary opposing the top boundary of the first color unit pixel to the center of the first color unit pixel (Fig. 3A and paragraphs 40-41), wherein the first color unit pixel is configured to detect first color light corresponding to a first wavelength (green light corresponding to a green light wavelength) (Fig. 2 and paragraphs 32-33), wherein the second color unit pixel is configured to detect second color light corresponding to a second wavelength different from the first wavelength (red light corresponding to a red light wavelength) (Fig. 2 and paragraphs 32-33), wherein the left, right, top, and bottom separation structures are connected to the first separation structure (Figs. 3A and 3D), wherein the first, left, right, top, and bottom separation structures are configured to penetrate the substrate (Figs. 3C-3D), wherein the left separation structure is spaced apart from the right separation structure (Fig. 3D), and wherein the top separation structure is spaced apart from the bottom separation structure (Fig. 3D). Regarding claim 12, Kim teaches wherein the first color unit pixel has a horizontal unit pixel length in a first direction, and wherein a length from the center of the first color unit pixel to an end of the left separation structure is shorter than ¼ of the horizontal unit pixel length (Fig. 3A and 3D). Regarding claim 13, Kim teaches wherein the first color unit pixel has a vertical unit pixel length in a second direction perpendicular to the first direction, and wherein a length from the center of the first color unit pixel to an end of the top separation structure is shorter than ¼ of the vertical unit pixel length (Fig. 3A and 3D). Regarding claim 15, Kim teaches further comprises a second pixel isolation trench (118) within the first color unit pixel, wherein the second pixel isolation trench is spaced apart from the first pixel isolation trench, and wherein the second pixel isolation trench does not penetrate the substrate (118 is a doped isolation pillar) (Fig. 3B and paragraphs 40-47). Regarding claim 16, Kim teaches wherein the second pixel isolation trench is on the center of the 4 subpixels arranged in a 2×2 matrix (Figs. 3A-3B and paragraphs 40-47). Regarding claim 17, Kim teaches wherein the second pixel isolation trench extends from the second surface to the first surface (Fig. 3B). Regarding claim 18, Kim teaches wherein the first pixel isolation trench extends from the first surface to the second surface (Fig. 3B). Regarding claim 19, Kim teaches further comprises a floating diffusion region (FD) on the first surface, and wherein the floating diffusion region vertically overlaps with the second pixel isolation trench (Figs. 3A-3B and paragraphs 38-39). Regarding claim 20, Kim teaches an image sensor, comprising: a substrate (102) having a first surface (102A) and a second surface (102B) opposing the first surface (Fig. 3B and paragraphs 35-37); a plurality of interlayer insulating films (182A-182D) and a plurality of wiring layers (184) disposed on the first surface of the substrate (Fig. 3B and paragraphs 51-52); a color filter (CF) and a micro lens (ML) disposed on the second surface of the substrate (Fig. 3B and paragraph 53-55); a first color unit pixel (a color unit pixel CP1 such as a first green color unit pixel) including a first subpixel (Ga1), a second subpixel (Ga3) directly adjacent to the first subpixel in a first direction (a y-direction), a third subpixel (Ga4) directly adjacent to the second subpixel in a second direction (a x-direction) perpendicular to the first direction, and a fourth subpixel (Ga2) directly adjacent to the first subpixel in the second direction and the third subpixel in the first direction (Figs. 2-3A and paragraphs 32-35); a second color unit pixel (another color unit pixel such as a red color unit pixel) including four subpixels (R1-R4) arranged in a 2×2 matrix (Figs. 2-3A and paragraphs 32-35); a first pixel isolation trench (112) configured to separate the first color unit pixel and the second color unit pixel (Figs. 2-3A and paragraphs 40-41); a second pixel isolation trench (one section of 114 separating Ga1 and Ga3) configured to separate the first subpixel and the second subpixel of the first color unit pixel (Figs. 2-3A and 3C and paragraphs 40-41); and a third pixel isolation trench (118) on a point of intersection of the first to fourth subpixels of the first color unit pixel (Figs. 3A-3B and paragraphs 40-41), wherein the first color unit pixel is configured to detect first color light corresponding to a first wavelength (green light corresponding to a green light wavelength) (Fig. 2 and paragraphs 32-33), wherein the second color unit pixel is configured to detect second color light corresponding to a second wavelength different from the first wavelength (red light corresponding to a red light wavelength) (Fig. 2 and paragraphs 32-33), wherein the image sensor is configured to receive the first color light on the second surface (Fig. 3B and paragraphs 53-58), wherein the second pixel isolation trench extends from the first surface to the second surface (Fig. 3C), and wherein the third pixel isolation trench extends from the second surface to the first surface (Fig. 3B). Claim 1 is rejected under 35 U.S.C. 102(a)(2) as being anticipated by Huh et al. (US 2024/0153976 A1; hereinafter “Huh”). Regarding claim 1, Huh teaches an image sensor, comprising: a substrate (102) having a first surface (102A) and a second surface (102B) opposing the first surface (Fig. 3B and paragraphs 26-28); a first color unit pixel (a color unit pixel CP1 such as a first green color unit pixel) including a first subpixel (Ga1), a second subpixel (Ga3) directly adjacent to the first subpixel in a first direction (a y-direction), a third subpixel (Ga4) directly adjacent to the second subpixel in a second direction (a x-direction) perpendicular to the first direction, and a fourth subpixel (Ga2) directly adjacent to the first subpixel in the second direction and the third subpixel in the first direction (Figs. 2-3A and paragraphs 24-27); a second color unit pixel (another color unit pixel CP1 such as a red color unit pixel) including four subpixels (R1-R4) arranged in a 2×2 matrix (Figs. 2-3A and paragraphs 24-27); a first pixel isolation trench (112) configured to separate the first color unit pixel and the second color unit pixel (Figs. 2-3A and paragraphs 31-32); a second pixel isolation trench (one section of 113/114 separating Ga1 and Ga3) configured to separate the first subpixel and the second subpixel of the first color unit pixel (Figs. 2-3A and paragraphs 31-32); and a third pixel isolation trench (118A) on a point of intersection of the first to fourth subpixels of the first color unit pixel (Figs. 3A-3B and paragraphs 37-38), wherein the first color unit pixel is configured to detect first color light corresponding to a first wavelength (green light corresponding to a green light wavelength) (Fig. 2 and paragraphs 32-33), wherein the second color unit pixel is configured to detect second color light corresponding to a second wavelength different from the first wavelength (red light corresponding to a red light wavelength) (Fig. 2 and paragraphs 24-25), wherein the image sensor is configured to receive the first color light on the second surface (Fig. 3B and paragraphs 55-58), wherein the second pixel isolation trench extends from the first surface to the second surface (Fig. 3C), and wherein the third pixel isolation trench extends from the second surface to the first surface (Fig. 3B). Claims 11-13 are rejected under 35 U.S.C. 102(a)(1) and/or 102(a)(2) as being anticipated by Lee et al. (US 2022/0199660 A1; hereinafter “Lee”). Regarding claim 11, Lee teaches an image sensor, comprising: a substrate (100) having a first surface (100a) and a second surface (100b) opposing the first surface (Figs. 15-16 and paragraphs 41 and 109-113); a first color unit pixel (PXG such as PXG11) including a plurality of subpixels (PX11, PX12, PX21, and PX22) arranged in a 2×2 matrix in the substrate (Figs. 1, 15-16, and 21A and paragraphs 39-40 and 130-133); a second color unit pixel (PXG such as PXG12) including a plurality of subpixels (PX11, PX12, PX21, and PX22) arranged in a 2×2 matrix in the substrate (Figs. 1, 15-16, and 21A and paragraphs 39-40 and 130-133), wherein the second color unit pixel is disposed directly adjacent to the first color unit pixel (Fig. 21A); and a first pixel isolation trench (400 and 500) comprising: a first separation structure (400) around the first color unit pixel; a left separation structure (a left-side one of 500x) extending from a left boundary of the first color unit pixel to the center of the first color unit pixel; a right separation structure (a right-side one of 500x) extending from a right boundary opposing the left boundary of the first color unit pixel to the center of the first color unit pixel; a top separation structure (a top-side one of 500y) extending from a top boundary of the first color unit pixel to the center of the first color unit pixel; and a bottom separation structure (a bottom-side one of 500y) extending from a bottom boundary opposing the top boundary of the first color unit pixel to the center of the first color unit pixel (Fig. 1 and paragraphs 41-43), wherein the first color unit pixel is configured to detect first color light corresponding to a first wavelength (PXG11 for red light corresponding to a red light wavelength) (Fig. 21A and paragraphs 130-133), wherein the second color unit pixel is configured to detect second color light corresponding to a second wavelength different from the first wavelength (PXG12 for green light corresponding to a green light wavelength) (Fig. 21A and paragraphs 130-133), wherein the left, right, top, and bottom separation structures are connected to the first separation structure (Fig. 1), wherein the first, left, right, top, and bottom separation structures are configured to penetrate the substrate (Fig. 16), wherein the left separation structure is spaced apart from the right separation structure (Fig. 1), and wherein the top separation structure is spaced apart from the bottom separation structure (Fig. 1). Regarding claim 12, Lee teaches wherein the first color unit pixel has a horizontal unit pixel length in a first direction (a horizontal length of PXG in DR1 as shown in Fig. 1), and wherein a length from the center of the first color unit pixel to an end of the left separation structure is shorter than ¼ of the horizontal unit pixel length (a horizontal length from CP to an end of the left-side one of 500x is shorter than ¼ of the horizontal length of PXG as shown in Fig. 1). Regarding claim 13, Lee teaches wherein the first color unit pixel has a vertical unit pixel length in a second direction perpendicular to the first direction (a vertical length of PXG in DR2 as shown in Fig. 1), and wherein a length from the center of the first color unit pixel to an end of the top separation structure is shorter than ¼ of the vertical unit pixel length (a vertical length from CP to an end of the top-side one of 500y is shorter than ¼ of the vertical length of PXG as shown in Fig. 1). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim 14 is rejected under 35 U.S.C. 103 as being unpatentable over Lee. Regarding claim 14, Lee teaches wherein the first color unit pixel has a horizontal unit pixel length in a first direction (a horizontal length of PXG in DR1 as shown in Fig. 1), and wherein the length from the center of the first color unit pixel to an end of the left separation structure is shorter than ¼ of the horizontal unit pixel length (a horizontal length from CP to an end of the left-side one of 500x is shorter than ¼ of the horizontal length of PXG as shown in Fig. 1). While Lee does not explicitly teach that the length from the center of the first color unit pixel to the end of the left separation structure is shorter than ⅙ of the horizontal unit pixel length, it would have been obvious to adjust the length from the center of the first color unit pixel to the end of the left separation structure and/or the horizontal unit pixel length of the first color unit pixel by a routine experimentation to obtain the optimal ratio, including the claimed ratio of ¼, for obtaining the enhanced image quality of the image sensor. Allowable Subject Matter Claims 8 and 10 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to DANIEL B WHALEN whose telephone number is (571)270-3418. The examiner can normally be reached on M-F: 8AM-5PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Sue Purvis can be reached on (571)272-1236. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DANIEL WHALEN/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Nov 22, 2023
Application Filed
Jan 21, 2026
Non-Final Rejection — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604720
THROUGH MOLD INTERCONNECT DRILL FEATURE
2y 5m to grant Granted Apr 14, 2026
Patent 12593440
SEMICONDUCTOR DEVICE INCLUDING SINGLE CRYSTAL SEMICONDUCTOR PATTERN WITH COMPLEMENTARY STRUCTURE
2y 5m to grant Granted Mar 31, 2026
Patent 12588396
ARRAY SUBSTRATE AND DISPLAY PANEL COMPRISING LIGHT ADJUSTING LAYER BETWEEN TRANSPARENT LAYERS
2y 5m to grant Granted Mar 24, 2026
Patent 12581790
ELETROLUMINESCENT DEVICE INCLUDING POLYCARBOXYLIC ACID COMPOUND AND HALOGEN AT INTERFACE BETWEEN ELECTRON TRANSPORT LAYER AND LIGHT EMITTING LAYER, AND PRODUCTION METHOD THEREOF
2y 5m to grant Granted Mar 17, 2026
Patent 12581722
SEMICONDUCTOR DEVICE INCLUDING IMPURITY REGIONS AND ELEMENT ISOLATION PORTION AND METHOD OF MANUFACTURING THE SAME
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

1-2
Expected OA Rounds
80%
Grant Probability
96%
With Interview (+16.0%)
2y 6m
Median Time to Grant
Low
PTA Risk
Based on 993 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month