DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Election/Restrictions
Claims 2-8,21 withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected group, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 02/13/2026.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claim(s) 9-20 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Wojtczuk et al. (USPN 2016/00881552).
Regarding claim 9, a detector for measuring incident light emitted by a light source, the detector comprising: a first anti-reflective coating; a second anti-reflective coating; and a photodiode positioned between the first anti-reflective coating and second anti- reflective coating, wherein at least a portion of the photodiode is translucent. See figure 3, ([0039]-[0044])
Regarding claim 10, the photodiode is 1-15 nm thick. See figure 3, ([0039]-[0044])
Regarding claim 11, a detecting region configured to detect incident light. See figure 3, ([0039]-[0044])
Regarding claim 12, a translucent region configured to allow passage of incident light through the detector. See figure 3, ([0039]-[0044])
Regarding claim 13, the detecting region is different from the translucent region. See figure 3, ([0039]-[0044])
Regarding claim 14, the detecting region overlaps with the translucent region. See figure 3, ([0039]-[0044])
Regarding claim 15, a wafer positioned between the photodiode and the second anti-reflective coating. See figure 3, ([0039]-[0044])
Regarding claim 16, the wafer is 1-10 pm thick. See figure 3, ([0039]-[0044])
Regarding claim 17, the wafer is ana N-type Indium Phosphide (N-InP) wafer. See figure 3, ([0039]-[0044])
Regarding claim 18, an optical measurement device comprising a light source (figure 1, emitter 104) and the detector of claim 9 configured to detect incident light emitted from the light source, wherein the detector is positioned in a light path of the light source. See figures 1 and 3, ([0039]-[0044])
Regarding claim 19, the optical measurement device is configured to measure a physiological parameter, and the detector is configured to measure incident light emitted from the light source prior to reaching a measurement site of a patient. See figures 1 and 3, ([0039]-[0044])
Regarding claim 20, the optical measurement device comprises a second detector configured to detect attenuated light, the attenuated light having been attenuated by the measurement site. See figures 1 and 3, ([0039]-[0044])
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to MARJAN FARDANESH whose telephone number is (571)270-5508. The examiner can normally be reached Monday-Friday 9:00-17:00.
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/MARJAN FARDANESH/ Primary Examiner, Art Unit 3791