Prosecution Insights
Last updated: April 19, 2026
Application No. 18/548,214

POWER AMPLIFIER AND RADIO FREQUENCY MODULE

Non-Final OA §102
Filed
Aug 28, 2023
Examiner
CHOE, HENRY
Art Unit
2843
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Mitsubishi Electric Corporation
OA Round
1 (Non-Final)
92%
Grant Probability
Favorable
1-2
OA Rounds
2y 1m
To Grant
65%
With Interview

Examiner Intelligence

Grants 92% — above average
92%
Career Allow Rate
1238 granted / 1339 resolved
+24.5% vs TC avg
Minimal -27% lift
Without
With
+-27.4%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 1m
Avg Prosecution
29 currently pending
Career history
1368
Total Applications
across all art units

Statute-Specific Performance

§101
0.5%
-39.5% vs TC avg
§103
37.4%
-2.6% vs TC avg
§102
47.1%
+7.1% vs TC avg
§112
3.8%
-36.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1339 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-5, 16 and 17 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by [Ono et al (Fig. 5); 6,876,270]. Regarding claim 1, Ono et al discloses an amplifier circuit comprising an input terminal (81) which receives a high frequency signal (RF IN) from an outside, an MMIC (1, C51, 17, Tr1) which receives the high frequency signal (RF IN) via the input terminal (81) and amplifies the high frequency signal (RF IN), input matching circuit (2, C54, 18), a transistor (Tr2) which receives via the input matching circuit (2, C54, 18) and wherein the high frequency signal (RF IN) amplified by the MMIC (1, C51, 17, Tr1) and amplifies the high frequency signal (RF IN), output matching circuit (19, C57, 20), an output terminal (86) which receives a drain voltage (the voltage applying to the upper terminal of the element 96) of the transistor (Tr2) from the outside receives via the output matching circuit (19, C57, 20) and the high frequency signal (RF IN) amplified by the transistor (Tr2) and outputs the high frequency signal (RF IN) to the outside, and a drain bias circuit board (Vd1, 84, C53, 93, Vd2, 85, C56, 95) which connects a drain (drain of Tr2) of the transistor (Tr2) and a drain (drain of Tr1) of the MMIC (1, C51, 17, Tr1). It should be noted that the limitation of “the transistor and the MMIC are conjugately matched at impedance smaller than 50 ohm” is intended use of the invention. Regarding claim 2, wherein a gate voltage (Vg1) of the MMIC (1, C51, 17, Tr1) is input to the input terminal (82) from the outside. Regarding claim 3, wherein the power amplifier (Fig. 5) includes only the input terminal (81) and the output terminal (86) as terminals. Regarding claim 4, wherein the drain bias circuit board (Vd1, 84, C53, 93, Vd2, 85, C56, 95) and a chock inductor (inductor in 93, inductor in 95) is provided on a line connecting the drain (drain terminal of 95) of the transistor (Tr2) and the drain (drain terminal of 93) of the MMIC (1, C51, 17, Tr1). Regarding claim 5, wherein a path connecting the drain (drain terminal of Tr2) of the transistor (Tr2) and the drain (drain terminal of Tr1) of the MMIC (1, C51, 17, Tr1) via the drain bias circuit board (Vd1, 84, C53, 93, Vd2, 85, C56, 95) is connected to a terminal for grounding by a first capacitor (C53, C56). Regarding claim 16, the limitation recited in claim 16 is intended use of the invention. Regarding claim 17, Ono et al further comprising a drain bias supply point (85) for supplying the drain voltage (Vd2) to the output terminal (86) wherein a path connecting the drain (drain terminal of Tr2) of the transistor (Tr2) and the drain (drain terminal of Tr1) of the MMIC (1, C51, 17, Tr1) via the drain bias circuit board (Vd1, 84, C53, 93, Vd2, 85, C56, 95) is connected to a terminal for ground by a first capacitor (C53), and a path connecting the drain bias supply point (85) and the output terminal (86) is connected to the terminal for grounding by a second capacitor (C56). Allowable Subject Matter Claims 6-15 and 18 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to Henry Choe whose telephone number is (571)272-1760. The examiner can normally be reached Mon-Fri 6:00 AM- 6:00 PM EST. Examiner interviews are available via telephone, in person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interview practice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Andrea J Lindgren Baltzell can be reached on (571)272-5918. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. /HENRY CHOE/ Primary Examiner, Art Unit 2843 #2942
Read full office action

Prosecution Timeline

Aug 28, 2023
Application Filed
Jan 20, 2026
Non-Final Rejection — §102
Mar 17, 2026
Interview Requested

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12603612
POWER SUPPLY CONTROL SYSTEM
2y 5m to grant Granted Apr 14, 2026
Patent 12603625
STACKED DIGITAL CURRENT STEERING AUTOMATIC GAIN CONTROL ATTENUATOR
2y 5m to grant Granted Apr 14, 2026
Patent 12597890
OVER TEMPERATURE PROTECTION OF LDO CONTROLLING THE RF POWER AMPLIFIER COLLECTOR VOLTAGE
2y 5m to grant Granted Apr 07, 2026
Patent 12597893
SEMICONDUCTOR INTEGRATED CIRCUIT AND RADIO-FREQUENCY MODULE
2y 5m to grant Granted Apr 07, 2026
Patent 12597888
ADAPTIVE STABILIZATION AND/OR PERFORMANCE OPTIMIZATION OF POWER AMPLIFIERS
2y 5m to grant Granted Apr 07, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

1-2
Expected OA Rounds
92%
Grant Probability
65%
With Interview (-27.4%)
2y 1m
Median Time to Grant
Low
PTA Risk
Based on 1339 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month