Prosecution Insights
Last updated: October 26, 2026
Application No. 18/570,093

HAFNIUM COMPOUND-CONTAINING SOL-GEL SOLUTION, METHOD FOR PRODUCING HAFNIUM COMPOUND-CONTAINING SOL-GEL SOLUTION, AND METHOD FOR PRODUCING HAFNIA-CONTAINING FILM

Non-Final OA §102
Filed
Dec 14, 2023
Priority
Sep 09, 2021 — JP 2021-146772 +2 more
Examiner
NILAND, PATRICK DENNIS
Art Unit
1762
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Mitsubishi Materials Corporation
OA Round
1 (Non-Final)
64%
Grant Probability
Moderate
1-2
OA Rounds
6m
Est. Remaining
58%
With Interview

Examiner Intelligence

Grants 64% of resolved cases
64%
Career Allowance Rate
844 granted / 1324 resolved
-1.3% vs TC avg
Minimal -5% lift
Without
With
+-5.2%
Interview Lift
resolved cases with interview
Typical timeline
3y 5m
Avg Prosecution
15 currently pending
Career history
1341
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
39.5%
-0.5% vs TC avg
§102
18.8%
-21.2% vs TC avg
§112
29.5%
-10.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1324 resolved cases

Office Action

§102
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Rejections Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 2, and 5 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Akashi et al., “Resistance to Active Oxidation of Sol-Gel HfO2 Coated SiC Polycrystal”, ECS Transactions, Vol. 44, No. 16, 2009, ISSN 1938-5862, pages 185-190. Akashi discloses a hafnium compound containing sol-gel solution containing Hf(OEt)4, ethanol, which is a lower alcohol having 5 or less carbon atoms that serves as a solvent, and diethanol amine, which is a polyol of the instant claims, to stabilize the solution and increase the viscosity. The diethanol amine is a stabilizer of the instant claim 2 therefore. The instant claim 2 does not require the stabilizer to be different from the polyalcohol. See Akashi, page 186, the second paragraph of the section titled “Experimental Procedure”. The method described in “Experimental Procedure” falls within the scope of the instant claim 5. Note that the hafnium ethoxylate solution of Akashi is a sol-gel according to Akashi, the title, the abstract, and page 189, “Conclusion”. 3. Claims 1-5 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Shimada et al., “Preparation and high temperature oxidation of SiC compositionally graded graphite coated with HfO2”, CARBON 40, April 27, 2002, pages 2469-2475. Shimada discloses a hafnium compound containing sol-gel solution containing HfCl4 dissolved in ethanol and refluxed with diethanolamine and HNO3. See the abstract. This composition falls within the scope of the instant claims 1 and 2. The diethanolamine necessarily stabilizes the composition and the instant claims do not require the stabilizer to be different from the polyalcohol. See page 2470, the right column, first 4 lines of text. The amount of HfCl4 of Shimada, page 2470, the right column, first 6 lines of text, is 9.5 wt% which falls within the scope of the instant claim 3. The amount of polyalcohol of Shimada falls within the scope of the instant claim 3. The method of producing the hafnium compound-containing sol-gel solutions of Shimada falls within the scope of the instant claim 4. See Shimada, page 2470, the right column, first 6 lines of text. The method of producing the hafnia-containing films of Shimada falls within the scope of the instant claim 5. See Shimada, page 2470, right column, Figure 1 and the paragraph bridging pages 2470-2471. Conclusion 4. Any inquiry concerning this communication or earlier communications from the examiner should be directed to PATRICK D NILAND whose telephone number is (571)272-1121. The examiner can normally be reached on Monday to Friday from 10 to 5. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Robert S Jones, can be reached at telephone number 571-270-7733. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from Patent Center. Status information for published applications may be obtained from Patent Center. Status information for unpublished applications is available through Patent Center to authorized users only. Should you have questions about access to the USPTO patent electronic filing system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). Examiner interviews are available via a variety of formats. See MPEP § 713.01. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) Form at https://www.uspto.gov/InterviewPractice. /PATRICK D NILAND/Primary Examiner, Art Unit 1762
Read full office action

Prosecution Timeline

Dec 14, 2023
Application Filed
Sep 30, 2026
Non-Final Rejection mailed — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
64%
Grant Probability
58%
With Interview (-5.2%)
3y 5m (~6m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1324 resolved cases by this examiner. Grant probability derived from career allowance rate.

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