Prosecution Insights
Last updated: April 19, 2026
Application No. 18/572,341

DRIVE CIRCUIT, ARRAY CIRCUIT, AND NEUROMORPHIC DEVICE

Non-Final OA §103
Filed
Apr 22, 2024
Examiner
CHENG, DIANA
Art Unit
2849
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
TDK Corporation
OA Round
3 (Non-Final)
84%
Grant Probability
Favorable
3-4
OA Rounds
2y 4m
To Grant
92%
With Interview

Examiner Intelligence

Grants 84% — above average
84%
Career Allow Rate
770 granted / 919 resolved
+15.8% vs TC avg
Moderate +8% lift
Without
With
+8.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
8 currently pending
Career history
927
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
46.5%
+6.5% vs TC avg
§102
37.7%
-2.3% vs TC avg
§112
9.5%
-30.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 919 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Response to Amendment The finality of the office action mailed 02/05/2026 is withdrawn. Response to Arguments Applicant’s arguments, see Remarks, filed 01/14/2026, with respect to the rejection(s) of claim(s) 1-12 under Yoshizaki et al. have been fully considered and are persuasive. Therefore, the rejection has been withdrawn. However, upon further consideration, a new ground(s) of rejection is made in view of Yoshizaki et al., in view of Chuang et al. (US 11,469,369 B2). Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 1-12 is/are rejected under 35 U.S.C. 103 as being unpatentable over Yoshizaki et al. (US 7,493,098 B2), in view of Chuang et al. (US 11,469,369 B2). Regarding Claim 1, Yoshizaki et al. teaches in Figure 7 a drive circuit comprising: a load resistor (RL); a variable resistance element configured to have at least a first terminal and a second terminal (Q11, RE); and a constant current source configured to determine a magnitude of a current flowing through the load resistor based on an input voltage and a resistance value of the variable resistance element (Q21), wherein a voltage across the load resistor is output as an output voltage (Vout); but does not explicitly teach the variable resistance element configured to be capable of changing a resistance value based on a magnetoresistance effect. Chuang et al. teaches in Figure 1B the variable resistance element (104) configured to be capable of changing a resistance value based on a magnetoresistance effect (Col. 4, lines 34-54: wherein the resistive state of 104 is based on a magnetoresistance ratio). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to use the magnetoresistance value teachings of Chuang et al. with the variable resistance element of Yoshizaki et al. for the purpose of increasing “the MR ratio of the MTJ memory element 104 while reducing the set voltage, and reducing power consumption of the MTJ memory element 104.” Chuang et al.: Col. 4, lines 51-54. Regarding Claim 2, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches the drive circuit, wherein the resistance value of the load resistor is able to be selected (based on input into Q11). Regarding Claim 3, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches the drive circuit, wherein the variable resistance element has a third terminal in addition to the first terminal and the second terminal (where Q11 has a third terminal in addition to the first terminal connected to Q21 and a second terminal connected to ground). Regarding Claim 4, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches the drive circuit, wherein the variable resistance element is a magnetic domain wall motion type (Q11, RE). Regarding Claim 5, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches the drive circuit wherein the resistance value of the variable resistance element changes in a case in which a voltage is applied between the second terminal and the third terminal (based on Vin signal), and wherein the drive circuit further includes a resistance control circuit applying a voltage between the second terminal and the third terminal (circuit which generates Vin). Regarding Claim 6, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches the drive circuit, wherein a switching element is connected between at least one of the second terminal and the third terminal and the resistance control circuit (Q11). Regarding Claim 7, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches the drive circuit wherein one of two terminals included in the load resistor is connected to a constant voltage source (where RL connects to Q21), and wherein the constant current source is a bipolar transistor including a base terminal to which the input voltage is applied, a collector terminal connected to the other of the two terminals included in the load resistor, and an emitter terminal connected to the first terminal of the variable resistance element (where Q21 is connected to an input voltage, RL, and Q11,RE, respectively). Regarding Claim 8, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches the drive circuit, wherein the variable resistance element and the bipolar transistor are stacked as an integrated circuit (where Q21, and Q11,RE are stacked). Regarding Claim 9, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. teaches an array circuit comprising: a plurality of the drive circuits according to claim 1 (see claim 1), wherein the plurality of the drive circuits share the load resistor and are connected in parallel (see Claim 6, where there are two drive circuits connected in parallel). Regarding Claim 10, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches the array circuit wherein the load resistor shared in the plurality of the drive circuits and the constant current source of each of the plurality of the drive circuits are connected to each other through a current mirror (RL, which are connected to the same upper node and to each Q21 and Q24), and wherein a ground electric potential of the input voltage and a ground electric potential of the output voltage are configured to be common (where nodes of the input voltage and the ground electric potential of the output voltage are to ground). Regarding Claim 11, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches the array circuit wherein a current flow-in/out circuit that is able to perform at least one of causing a current to flow in the load resistor and causing a current to flow out from the load resistor is connected (using Vout). Regarding Claim 12, Yoshizaki et al. and Chuang et al., as a whole, teach all the limitations of the present invention, wherein Yoshizaki et al. further teaches a neuromorphic device comprising the array circuit according to claim 9 (see rejection of Claim 9). Contact Any inquiry concerning this communication or earlier communications from the examiner should be directed to Diana J Cheng whose telephone number is (571)270-1197. The examiner can normally be reached Monday - Friday 9 am - 5:30 pm ET. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Menatoallah Youssef can be reached at (571)270-3684. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DIANA J. CHENG/Primary Examiner, Art Unit 2849
Read full office action

Prosecution Timeline

Apr 22, 2024
Application Filed
Sep 10, 2025
Non-Final Rejection — §103
Dec 16, 2025
Examiner Interview Summary
Dec 16, 2025
Examiner Interview (Telephonic)
Jan 14, 2026
Response Filed
Feb 02, 2026
Final Rejection — §103
Feb 04, 2026
Non-Final Rejection — §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
84%
Grant Probability
92%
With Interview (+8.2%)
2y 4m
Median Time to Grant
High
PTA Risk
Based on 919 resolved cases by this examiner. Grant probability derived from career allow rate.

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