Prosecution Insights
Last updated: October 04, 2026
Application No. 18/581,984

METHOD FOR IMPROVING THE OHMIC CONTACT BETWEEN A FRONT CONTACT GRID AND A DOPED LAYER OF A WAFER SOLAR CELL

Non-Final OA §102§103§112
Filed
Feb 20, 2024
Priority
Feb 20, 2023 — DE 102023104164.9
Examiner
AYAD, TAMIR
Art Unit
1726
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Ce Cell Engineering GmbH
OA Round
3 (Non-Final)
42%
Grant Probability
Moderate
3-4
OA Rounds
9m
Est. Remaining
90%
With Interview

Examiner Intelligence

Grants 42% of resolved cases
42%
Career Allowance Rate
306 granted / 724 resolved
-22.7% vs TC avg
Strong +48% interview lift
Without
With
+47.9%
Interview Lift
resolved cases with interview
Typical timeline
3y 5m
Avg Prosecution
49 currently pending
Career history
792
Total Applications
across all art units

Statute-Specific Performance

§101
0.7%
-39.3% vs TC avg
§103
52.2%
+12.2% vs TC avg
§102
20.5%
-19.5% vs TC avg
§112
21.7%
-18.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 724 resolved cases

Office Action

§102 §103 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claim 16 is rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Specifically, claim 16 recites the limitation "the sun-facing front side of the wafer solar cell" in lines 1 and 2. There is insufficient antecedent basis for this limitation in the claim. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 8-10, 15, and 17 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Zhao (US 2020/0365746 A1). Regarding claim 1, Zhao discloses a method for improving the ohmic contact between a front contact grid and a doped layer of a wafer solar cell (abstract), the method comprising the following steps: providing the wafer solar cell having the doped layer ([0022]), the front contact grid, and a back contact grid ([0022]), electrically contacting the front contact grid with a contacting device electrically connected to a pole of a voltage source ([0023]), electrically contacting a further contacting device electrically connected to the other pole of the voltage source with the back contact grid ([0023]), applying a voltage to the front contact grid and the back contact grid using the voltage source ([0023]), wherein the applied voltage is smaller in magnitude than a breakdown voltage of the wafer solar cell, and the applied voltage is opposite to a forward-biased voltage direction of the wafer solar cell ([0023]), guiding a point light source over a sun-averted back side of the wafer solar cell while the voltage is applied ([0027] teaches that for bifacial solar cells, one-sided treatment is sufficient to optimize the contacts on both sides; it is noted that the disclosure satisfies the limitation “guiding a point light source over a sun-averted back side of the wafer solar cell while the voltage is applied”), wherein a section of a partial region of the sun-averted back side is illuminated such that a current flow is induced in the partial region and acts on the partial region ([0023] discloses a section of a subsection), wherein the voltage, which is in a range from 1 to 40 V ([0024] discloses 10 V), is applied by the voltage source to the front contact grid and the back contact grid in an opposite directed of the forward-biased voltage direction ([0023]), wherein a local illumination has a power density in a range from 200 W/cm2 to 500,000 W/cm2 ([0013]) and wherein a current from 0.1 to 10 A flows between front and back contacts while the voltage is applied and during illumination ([0024]). Regarding claim 8, Zhao discloses all the claim limitations as set forth above. Zhao further discloses the wafer solar cell is a bifacial solar cell ([0027]). Regarding claim 9, Zhao discloses all the claim limitations as set forth above. Zhao further discloses the point light source is guided directly next to back contact fingers of the back contact grid over the sun-averted back side of the wafer solar cell ([0017], [0027] discloses one-sided treatment). Regarding claim 10, Zhao discloses all the claim limitations as set forth above. Zhao further discloses the point light source is a laser ([0012]). Regarding claim 15, Zhao discloses all the claim limitations as set forth above. Zhao further discloses wherein guiding a point light source over a sun-averted back side of the wafer solar cell comprises guiding a point light source only over the sun-averted back side of the wafer solar cell ([0027]). Regarding claim 17, Zhao discloses all the claim limitations as set forth above. Zhao further discloses the point light source is guided directly next to back contact fingers of the back contact grid over the sun-averted back side of the wafer solar cell ([0017], [0027] discloses one-sided treatment). Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claims 1, 6, 8-10, and 15-17 are rejected under 35 U.S.C. 103 as being unpatentable over Sany Group Co. Ltd. (CN 115312629 A – see attached machine translation, hereinafter referred to as Sany Group) in view of Zhao (US 2020/0365746 A1). Regarding claim 1, Sany Group discloses a method for improving the ohmic contact between a front contact grid and a doped layer of a wafer solar cell ([n0046]), the method comprising the following steps: providing the wafer solar cell having the doped layer ([n0060]), the front contact grid, and a back contact grid ([n0064]). While Sany Group does disclose laser-enhanced contact optimization technology is used to process the metal paste on the front side of the wafer ([n0065]), and laser-enhanced contact optimization technology is used to process the metal paste of the back side of the wafer ([n0103]); Sany Group does not explicitly disclose electrically contacting the front contact grid with a contacting device electrically connected to a pole of a voltage source, electrically contacting a further contacting device electrically connected to the other pole of the voltage source with the back contact grid, applying a voltage to the front contact grid and the back contact grid using the voltage source, wherein the applied voltage is smaller in magnitude than a breakdown voltage of the wafer solar cell, and the applied voltage is opposite to a forward-biased voltage direction of the wafer solar cell, guiding a point light source over a sun-averted back side of the wafer solar cell while the voltage is applied, wherein a second of a partial region of the sun-averted back side is illuminated such that a current flow is induced in the partial region and acts on the partial region, wherein the voltage, which is in a range from 1 to 40 V, is applied by the voltage source to the front contact grid and the back contact grid in an opposite directed of the forward-biased voltage direction, wherein a local illumination has a power density in a range from 200 W/cm2 to 500,000 W/cm2, and wherein a current from 0.1 to 10 A flows between front and back contacts while the voltage is applied and during illumination. Zhao discloses a method for improving the ohmic-contact behavior between a contact grid and an emitter layer in a silicon solar cell ([0001]), and further discloses electrically contacting the front contact grid with a contacting device electrically connected to a pole of a voltage source ([0023]), electrically contacting a further contacting device electrically connected to the other pole of the voltage source with the back contact grid ([0023]), applying a voltage to the front contact grid and the back contact grid using the voltage source ([0023]), wherein the applied voltage is smaller in magnitude than a breakdown voltage of the wafer solar cell ([0023]), and the applied voltage is opposite to a forward-biased voltage direction of the wafer solar cell ([0023]), wherein the voltage, which is in a range from 1 to 40 V ([0024] discloses 10 V), is applied by the voltage source to the front contact grid and the back contact grid in an opposite directed of the forward-biased voltage direction ([0023]), wherein a local illumination has a power density in a range from 200 W/cm2 to 500,000 W/cm2 ([0013]) and wherein a current from 0.1 to 10 A flows between front and back contacts while the voltage is applied and during illumination ([0024]). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to use the LECO process parameters disclosed by Zhao for the LECO process used to process the metal paste of the back side of the wafer of Sany Group, because as evidenced by Zhao, the disclosed LECO process parameters are known in the art, and one skilled in the art would have a reasonable expectation of success when using the process parameters disclosed by Zhao for the LECO process used to process the metal paste of the back side of the wafer of Sany Group. Modified Sany Group discloses guiding a point light source (Zhao – [0023]) over a sun-averted back side of the wafer solar cell (Sany Group – [n0103]) while the voltage is applied (Sany Group – [0023]), wherein a second of a partial region (Zhao – [0023] discloses a section of a subsection) of the sun-averted back side is illuminated (Sany Group – [n0103]) such that a current flow is induced in the partial region and acts on the partial region (Zhao – [0023]). Regarding claim 6, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group further discloses a front side of the wafer solar cell has a greater surface roughness than a back side of the wafer solar cell (Sany Group – Figures 2 and 3). Regarding claim 8, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group further discloses the wafer solar cell is a bifacial solar cell (Sany Group – [n0003] discloses bifacial TOPCon cells). Regarding claim 9, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group further discloses the point light source is guided directly next to back contact fingers of the back contact grid over the sun-averted back side of the wafer solar cell (Zhao – [0017], [0027] discloses one-sided treatment). Regarding claim 10, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group further discloses the point light source is a laser (Zhao – [0012]). Regarding claim 15, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group further discloses wherein guiding a point light source over a sun-averted back side of the wafer solar cell comprises guiding a point light source only over the sun-averted back side of the wafer solar cell (Zhao - [0027]). Regarding claim 16, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group further discloses the sun-facing front side of the wafer solar cell has a greater surface roughness than the sun-averting back side of the wafer solar cell (Sany Group – Figures 2 and 3). Regarding claim 17, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group further discloses the point light source is guided directly next to back contact fingers of the back contact grid over the sun-averted back side of the wafer solar cell (Zhao - [0017], [0027] discloses one-sided treatment). Claims 2-5 are rejected under 35 U.S.C. 103 as being unpatentable over Sany Group Co. Ltd. (CN 115312629 A – see attached machine translation, hereinafter referred to as Sany Group) in view of Zhao (US 2020/0365746 A1) as applied to claim 1 above, and further in view of Chang et al. (US 2011/0303266). Regarding claim 2, modified Sany Group discloses all the claim limitations as set forth above. While modified Sany Group does disclose the front contact grid and the back contact grid respectively cover a front side and back side of the wafer solar cell with a degree of metallization, have electrical conductivity, and have an electrical layer resistance in material on the front side and back side (Sany Group – [n0045]; it is noted that the disclosed electrodes necessarily have an electrical layer resistance), modified Sany Group does not explicitly disclose the back contact grid has a greater degree of metallization than the front contact grid, has a higher electrical conductivity than the front contact grid, and/or has a lower electrical layer resistance in the material on the back side than the front contact grid on the front side. Chang discloses a back contact grid with a greater degree of metallization than the front contact grid (Fig. 3). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to form the back contact grid of modified Sany Group with a greater degree of metallization than the front contact grid, as disclosed by Chang, because as taught by Chang, among light beams incident on the first surface, some of the light beams are reflected by the second electrodes, further improving efficiency of the solar cell ([0011]). Regarding claim 3, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group does not explicitly disclose the front contact grid has a multiplicity of front contact fingers arranged parallel to one another and at least one front busbar arranged transversely to the multiplicity of front contact fingers, and/or the back contact grid has a multiplicity of back contact fingers arranged parallel to one another and at least one back busbar arranged transversely to the multiplicity of back contact fingers. Chang discloses a back contact grid with a multiplicity of back contact fingers arranged parallel to one another and at least one back busbar arranged transversely to the multiplicity of back contact fingers (180 in relation to 190 in Figures 2 and 3). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to form the back contact grid of modified Sany Group with a multiplicity of back contact fingers arranged parallel to one another and at least one back busbar arranged transversely to the multiplicity of back contact fingers, as disclosed by Chang, because as evidenced by Chang, the configuration amounts to the use of a known arrangement in the art for a back contact grid of a solar cell, and one of ordinary skill in the art would have a reasonable expectation of success when forming the back contact grid of modified Sany Group with a multiplicity of back contact fingers arranged parallel to one another and at least one back busbar arranged transversely to the multiplicity of back contact fingers based on the teaching of Chang. Regarding claim 4, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group does not explicitly disclose the front contact fingers are arranged at a distance from one another which is greater than a further distance at which the back contact fingers are arranged from one another. Chang discloses front contact fingers arranged at a distance from one another which is greater than a further distance at which the back contact fingers are arranged from one another (Fig. 3). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to form the front contact fingers of modified Sany Group such that the front contact fingers are arranged at a distance from one another which is greater than a further distance at which the back contact fingers are arranged from one another, as disclosed by Chang, because as taught by Chang, among light beams incident on the first surface, some of the light beams are reflected by the second electrodes, further improving efficiency of the solar cell ([0011]). Regarding claim 5, modified Sany Group discloses all the claim limitations as set forth above. Modified Sany Group further discloses a number of the back contact fingers is greater than a number of front contact fingers (Chang - Fig. 3; 140 in relation to 180). Claims 2-5 are rejected under 35 U.S.C. 103 as being unpatentable over Zhao (US 2020/0365746 A1) as applied to claim 1 above, in view of Chang et al. (US 2011/0303266). Regarding claim 2, Zhao discloses all the claim limitations as set forth above. While Zhao does disclose the front contact grid and the back contact grid respectively cover a front side and back side of the wafer solar cell with a degree of metallization, have electrical conductivity, and have an electrical layer resistance in material on the front side and back side ([0022]; it is noted that the disclosed contacts necessarily have an electrical layer resistance); Zhao does not explicitly disclose the back contact grid has a greater degree of metallization than the front contact grid, has a higher electrical conductivity than the front contact grid, and/or has a lower electrical layer resistance in the material on the back side than the front contact grid on the front side. Chang discloses a back contact grid with a greater degree of metallization than the front contact grid (Fig. 3). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to form the back contact grid of Zhao with a greater degree of metallization than the front contact grid, as disclosed by Chang, because as taught by Chang, among light beams incident on the first surface, some of the light beams are reflected by the second electrodes, further improving efficiency of the solar cell ([0011]). Regarding claim 3, Zhao discloses all the claim limitations as set forth above. Zhao does not explicitly disclose the front contact grid has a multiplicity of front contact fingers arranged parallel to one another and at least one front busbar arranged transversely to the multiplicity of front contact fingers, and/or the back contact grid has a multiplicity of back contact fingers arranged parallel to one another and at least one back busbar arranged transversely to the multiplicity of back contact fingers. Chang discloses a back contact grid with a multiplicity of back contact fingers arranged parallel to one another and at least one back busbar arranged transversely to the multiplicity of back contact fingers (180 in relation to 190 in Figures 2 and 3). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to form the back contact grid of Zhao with a multiplicity of back contact fingers arranged parallel to one another and at least one back busbar arranged transversely to the multiplicity of back contact fingers, as disclosed by Chang, because as evidenced by Chang, the configuration amounts to the use of a known arrangement in the art for a back contact grid of a solar cell, and one of ordinary skill in the art would have a reasonable expectation of success when forming the back contact grid of Zhao with a multiplicity of back contact fingers arranged parallel to one another and at least one back busbar arranged transversely to the multiplicity of back contact fingers based on the teaching of Chang. Regarding claim 4, modified Zhao discloses all the claim limitations as set forth above. Modified Zhao does not explicitly disclose the front contact fingers are arranged at a distance from one another which is greater than a further distance at which the back contact fingers are arranged from one another. Chang discloses front contact fingers arranged at a distance from one another which is greater than a further distance at which the back contact fingers are arranged from one another (Fig. 3). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to form the front contact fingers of modified Zhao such that the front contact fingers are arranged at a distance from one another which is greater than a further distance at which the back contact fingers are arranged from one another, as disclosed by Chang, because as taught by Chang, among light beams incident on the first surface, some of the light beams are reflected by the second electrodes, further improving efficiency of the solar cell ([0011]). Regarding claim 5, modified Zhao discloses all the claim limitations as set forth above. Modified Zhao further discloses a number of the back contact fingers is greater than a number of front contact fingers (Chang - Fig. 3; 140 in relation to 180). Claims 6 and 16 are rejected under 35 U.S.C. 103 as being unpatentable over Zhao (US 2020/0365746 A1) as applied to claims 1 and 15 above, in view of Holdermann (US 2015/0040983). Regarding claim 6, Zhao discloses all the claim limitations as set forth above. Zhao does not explicitly disclose a front side of the wafer solar cell has a greater surface roughness than a back side of the wafer solar cell. Holdermann discloses a PERC solar cell (abstract) and further discloses a front side of the wafer solar cell has a greater surface roughness than a back side of the wafer solar cell ([0001]). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to form the front side of the wafer solar cell of Zhao with a greater surface roughness than a back side of the wafer solar cell, as disclosed by Holdermann, because such modification would involve a mere change in configuration. It has been held that a change in configuration of shape of a device is obvious, absent persuasive evidence that a particular configuration is significant. In re Dailey, 357 F.2d 669, 149 USPQ 47 (CCPA 1966). Regarding claim 16, Zhao discloses all the claim limitations as set forth above. Zhao does not explicitly disclose the sun-facing front side of the wafer solar cell has a greater surface roughness than the sun-averting back side of the wafer solar cell. Holdermann discloses a PERC solar cell (abstract) and further discloses a front side of the wafer solar cell has a greater surface roughness than a back side of the wafer solar cell ([0001]). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to form the front side of the wafer solar cell of Zhao with a greater surface roughness than a back side of the wafer solar cell, as disclosed by Holdermann, because such modification would involve a mere change in configuration. It has been held that a change in configuration of shape of a device is obvious, absent persuasive evidence that a particular configuration is significant. In re Dailey, 357 F.2d 669, 149 USPQ 47 (CCPA 1966). Allowable Subject Matter Claims 11-13 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Response to Arguments Applicant’s arguments with respect to claims 1-6, 8-13, and 15-17 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to TAMIR AYAD whose telephone number is (313) 446-6651. The examiner can normally be reached Monday - Friday, 8:30am - 5pm EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jeffrey Barton can be reached at (571) 272-1307. The fax phone number for the organization where this application or proceeding is assigned is (571) 273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at (866) 217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call (800) 786-9199 (IN USA OR CANADA) or (571) 272-1000. /TAMIR AYAD/Primary Examiner, Art Unit 1726
Read full office action

Prosecution Timeline

Feb 20, 2024
Application Filed
Apr 22, 2025
Non-Final Rejection mailed — §102, §103, §112
Aug 19, 2025
Response Filed
Dec 01, 2025
Final Rejection mailed — §102, §103, §112
Jan 28, 2026
Response after Non-Final Action
Feb 27, 2026
Request for Continued Examination
Mar 05, 2026
Response after Non-Final Action
Aug 25, 2026
Non-Final Rejection mailed — §102, §103, §112 (current)

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Prosecution Projections

3-4
Expected OA Rounds
42%
Grant Probability
90%
With Interview (+47.9%)
3y 5m (~9m remaining)
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