DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application is being examined under the pre-AIA first to invent provisions.
Response to Arguments
Applicant’s arguments with respect to claim(s) 1-4, 6-9, 11, 14, and 23-27 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument.
Drawings
The drawings are objected to under 37 CFR 1.83(a). The drawings must show every feature of the invention specified in the claims. Therefore, the Applicant maps claim 1 to the configuration shown in figure 11 but figure 11 does not show a lead frame as claimed.
Applicant maps claim 6 to the configuration shown in figure 12 but figure 12 does not show a magnetic field sensing element (324) is disposed in the second surface (328b), one or more solder balls (334) attached to the first surface (328a), and the lead frame as claimed.
Applicant maps claim 23 to the configuration shown in figure 13 but figure 13 does not show a magnetic field sensing element (348) is disposed in the second surface (344b), and the lead frame as claimed.
The limitations mentioned above must be shown or the features canceled from the claims. No new matter should be entered.
Corrected drawing sheets in compliance with 37 CFR 1.121(d) are required in reply to the Office action to avoid abandonment of the application. Any amended replacement drawing sheet should include all of the figures appearing on the immediate prior version of the sheet, even if only one figure is being amended. The figure or figure number of an amended drawing should not be labeled as “amended.” If a drawing figure is to be canceled, the appropriate figure must be removed from the replacement sheet, and where necessary, the remaining figures must be renumbered and appropriate changes made to the brief description of the several views of the drawings for consistency. Additional replacement sheets may be necessary to show the renumbering of the remaining figures. Each drawing sheet submitted after the filing date of an application must be labeled in the top margin as either “Replacement Sheet” or “New Sheet” pursuant to 37 CFR 1.121(d). If the changes are not accepted by the examiner, the applicant will be notified and informed of any required corrective action in the next Office action. The objection to the drawings will not be held in abeyance.
Claim Rejections - 35 USC § 103
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102 of this title, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
Claims 1-4, 6-9, 11, 14, and 23-27 are rejected under 35 U.S.C. 103 as being unpatentable over Taylor et al. (US2008/0297138) In view of Theuss et al. (US 20100276769 A1).
As to claims 1 Taylor discloses a magnetic field sensor comprising:
a semiconductor die (Fig. 6 Item 166 discloses a current sensor 150 also includes a substrate 166 Paragraph [0067]) having a first surface and a second opposing surface (Fig. 6 Item 166 discloses a substrate 166 a first surface and a second opposing surface 166a & 166b Paragraph [0067]) wherein a magnetic field sensing element (Fig. 6 Item 158 discloses sensing element 158 Paragraph [0067]) is disposed in the first surface (Fig. 6 Item 166 a) and wherein the semiconductor die (Fig. 6 Item 166) is configured for attachment to a lead frame (Fig. 6 Item 152);
a layer of ferromagnetic material (Fig. 6 Item 184 discloses a 184 can each be
comprised of a variety of materials, including Permalloy, and iron in Paragraph [0074]) formed over the second surface of the semiconductor die (Fig. 6 Item 166), the layer of ferromagnetic material (Fig. 6 Item 184 discloses a 184 can each be
comprised of a variety of materials, including Permalloy, and iron in Paragraph [0074]) are aligned (Fig. 6 Item 158 discloses sensing element 158 substantially aligned with a maximum response axis of the Hall effect element 158 Paragraph [0067-0068]) with each other in the layer (Fig. 6 Item 184 discloses a flux concentrating layer 184 Paragraph [0075]); and
one or more solder balls (Fig. 6 Item 160 a-160 c discloses a solder balls 160 a-
160 c couple directly to the leads 152 e-152 Paragraph [0067]) attached to the first surface of the semiconductor die and configured to contact the lead frame (see e.g. figs. 6;6A; para 0040;0067; note that the substrate is a semiconductor material).
However Taylor does not explicitly teach the layer of ferromagnetic material
including a polymer with hard magnetic particles;
However, Theuss teaches the layer of ferromagnetic material
including a polymer with hard magnetic particles; (Fig. 2 Item 46 & 48 discloses, hard magnetic particles may be magnetized before or after curing of the polymer matrix material. Suitable hard magnetic particles include NdFeB, SmCo, AlNiCo, ferrites or similar magnetic particles. The particles (whether soft or hard magnetic particles) are distributed in polymer 46 and have a mean particle diameter of between approximately 20-150 micrometers Paragraph [0030])
It would have been obvious to one skilled in the art before the effective filing date of the invention to modify an integrated circuit current sensor includes a lead frame having at least two leads coupled to provide a current conductor portion is unfoldedin Taylor to include the layer of ferromagnetic material including a polymer with hard magnetic particles as taught by Theuss in order to provide a polymer bonded permanent magnetic material that is magnetized during or after deposition over chip in Paragraph [0030]).
As to claims 2 Taylor discloses the magnetic field sensor of claim 1 wherein the magnetic field sensing element (Fig. 6 Item 158 discloses sensing element 158 Paragraph [0067]) is coupled to the lead frame (Fig. 6 Item 152) from the first surface of the semiconductor die (Fig. 6 Item 166).
As to claims 3 Taylor discloses the magnetic field sensor of claim 2 wherein the one or more solder balls (Fig. 6 Item 160 a-160 c discloses a solder
balls 160 a-160 c couple directly to the leads 152 e-152 Paragraph [0067]) configured to contact the lead frame (Fig. 6 Item 152) in a flip-chip arrangement.
As to claims 4 Taylor discloses the magnetic field sensor of claim 1 wherein the magnetic field sensing element (Fig. 6 Item 158) is to lead frame (Fig. 6 Item 152) from the second surface of the semiconductor die (Fig. 6 Item 166).
As to claims 6 Taylor discloses a magnetic field sensor comprising:
a semiconductor die (Fig. 6 Item 166 discloses a current sensor 150 also includes a substrate 166 Paragraph [0067]) having a first surface and a second opposing surface (Fig. 6 Item 166 discloses a substrate 166 a first surface and a second opposing surface 166a & 166b Paragraph [0067]), wherein a magnetic field sensing element (Fig. 6 Item 158 discloses sensing element 158 Paragraph [0067]) is disposed in the second surface (Fig. 6 Item 166 b) and wherein the semiconductor die (Fig. 6 Item 166) is configured for attachment to a lead frame (Fig. 6 Item 152);
a layer of ferromagnetic material (Fig. 6 Item 184 discloses a 184 can each be
comprised of a variety of materials, including Permalloy, and iron in Paragraph
[0074]) formed over the first surface (Fig. 6 Item 166 a) of the semiconductor die
(Fig. 6 Item 166), the layer of ferromagnetic material (Fig. 6 Item 184 discloses a
184 can each be comprised of a variety of materials, including Permalloy, and iron in Paragraph [0074]) are aligned (Fig. 6 Item 158 discloses sensing element 158 substantially aligned with a maximum response axis of the Hall effect element 158 Paragraph [0068]) with each other in the layer; and
one or more solder balls (Fig. 6 Item 160 a-160 c discloses a solder balls 160 a-
160 c couple directly to the leads 152 e-152 Paragraph [0067]) attached to the first of the semiconductor die and configured to contact the lead frame (see e.g. figs. 6;6A; para 0040;0067; note that the substrate is a semiconductor material).
However Taylor does not explicitly teach the layer of ferromagnetic material
including a polymer with hard magnetic particles;
However, Theuss teaches the layer of ferromagnetic material
including a polymer with hard magnetic particles; (Fig. 2 Item 46 &48 discloses, hard magnetic particles may be magnetized before or after curing of the polymer matrix material. Suitable hard magnetic particles include NdFeB, SmCo,AlNiCo, ferrites or similar magnetic particles. The particles (whether soft or hard magnetic particles) are distributed in polymer 46 and have a mean particle diameter of between approximately 20-150 micrometers Paragraph [0030]).
It would have been obvious to one skilled in the art before the effective filing date of the invention to modify an integrated circuit current sensor includes a lead frame having at least two leads coupled to provide a current conductor portion is unfoldedin Taylor to include the layer of ferromagnetic material including a polymer with hard magnetic particles as taught by Theuss in order to provide a polymer bonded permanent magnetic material that is magnetized during or after deposition over chip in Paragraph [0030]).
As to claims 7 Taylor discloses the magnetic field sensor of claim 6 further comprising one or more through silicon vias (Fig. discloses a substrate can be comprised of a semiconductor material, e.g., silicon Paragraph [0040]) coupled between the first surface of the semiconductor die and the second surface of the semiconductor die (Fig. 6 Item 166 discloses a substrate 166 a first surface and a second opposing surface 166a & 166b Paragraph [0067]),
As to claims 8 Taylor discloses the magnetic field sensor of claim 7
wherein the layer of ferromagnetic material (Fig. 6 Item 184 discloses a 184 can each be comprised of a variety of materials, including Permalloy, and iron in Paragraph [0074]) formed is formed over the second surface of the semiconductor die (Fig. 6 Item 166).
As to claims 9 Taylor discloses the magnetic field sensor of claim 8 wherein the
As to claims 9 Taylor discloses the magnetic field sensor of claim 8 wherein the
As to claims 11 Taylor discloses the magnetic field sensor of claim 6, wherein the layer of ferromagnetic material (Fig. 6 Item 184) is formed over the second surface of the semiconductor die (Fig. 6 Item 166) further comprising a protective layer (Fig. 6 Item 164) disposed between the second surface of the semiconductor die (Fig. 6 Item 166) and the layer of ferromagnetic material (Fig. 6 Item 184).
As to claims 14 Taylor discloses the magnetic field sensor of claim 1 wherein the layer of ferromagnetic material comprises a molded polymer (Fig. Item 250 discloses a frame 250 is molded into a plastic Paragraph [0092]).
As to claims 23 Taylor discloses a magnetic field sensor comprising:
a semiconductor die (Fig. 6 Item 166 discloses a current sensor 150 also includes a substrate 166 Paragraph [0067]) having a first surface and a second opposing surface (Fig. 6 Item 166 discloses a substrate 166 a first surface and a second opposing surface 166a & 166b Paragraph [0067]), wherein a magnetic field sensing element (Fig. 6 Item 158 discloses sensing element 158 Paragraph [0067]) is disposed in the second surface and wherein the semiconductor die (Fig. 6 Item 166) is configured for attachment to a lead frame (Fig. 6 Item 152),
a layer of dielectric material (Fig. 6 Item 184 discloses a flux concentrating
layer 184 Paragraph [0075]) that is formed over the second surface (Fig. 6 Item 166 b) of the semiconductor die (Fig. 6 Item 166) and the magnetic field sensing element (Fig. 6 Item 158 discloses sensing element 158 substantially aligned with a maximum response axis of the Hall effect element 158 Paragraph [0068]);
a layer of ferromagnetic material (Fig. 6 Item 184 discloses a 184 can each be
comprised of a variety of materials, including Permalloy, and iron in Paragraph [0074]) that is formed over the layer of dielectric material (Fig. 6 discloses current sensors include a Hall effect element mounted on a dielectric material Paragraph [0006]), the layer of ferromagnetic are aligned (Fig. 6 Item 158 discloses sensing element 158 substantially aligned with a maximum response axis of the Hall effect element 158 Paragraph [0068]) with each other in the layer; and
one or more solder balls (Fig. 6 Item 160 a-160 c discloses a solder balls 160 a-
160 c couple directly to the leads 152 e-152 Paragraph [0067]) attached to the first surface of the semiconductor die and configured to contact the lead frame (see e.g. figs. 6;6A; para 0040;0067; note that the substrate is a semiconductor material).
wherein the layer of dielectric material is arranged to provide an isolation barrier between the magnetic field sensing element and the magnetic particles.
However Taylor does not explicitly teach the layer of ferromagnetic material
including a polymer with hard magnetic particles;
a layer of ferromagnetic material that is formed over the layer of dielectric material,
However, Theuss teaches the layer of ferromagnetic material including a polymer
with hard magnetic particles; (Fig. 2 Item 46 & 48 discloses, hard magnetic particles may be magnetized before or after curing of the polymer matrix material. Suitable hard magnetic particles include NdFeB, SmCo, AlNiCo, ferrites or similar magnetic particles. The particles (whether soft or hard magnetic particles) are distributed in polymer 46 and have a mean particle diameter of between approximately 20-150 micrometers Paragraph [0030]),
a layer of ferromagnetic material (Fig. 1-2 Item magnet 32) that is formed over the layer of dielectric material (Fig. 1-2 Item dielectric 34),
It would have been obvious to one skilled in the art before the effective filing date of the invention to modify an integrated circuit current sensor includes a lead frame having at least two leads coupled to provide a current conductor portion is unfoldedin Taylor to include the layer of ferromagnetic material including a polymer with hard magnetic particles as taught by Theuss in order to provide a polymer bonded permanent magnetic material that is magnetized during or after deposition over chip in Paragraph [0030]).
As to claims 24 Taylor discloses the magnetic field sensor of claim 23, wherein the layer of dielectric material includes a polyimide layer or a tape layer (Fig. 6 discloses current sensors include a Hall effect element mounted on a dielectric material Paragraph [0006]).
As to claims 25 Taylor discloses the magnetic field sensor of claim 1, wherein the magnetic field sensing element (Fig. 6 Item 158 discloses sensing element 158 Paragraph [0067]) is disposed on the first surface (Fig. 6 Item 166).
As to claims 26 Taylor discloses the magnetic field sensor of claim 25, wherein the solder balls (Fig. 6 Item 160) are embedded into the layer of ferromagnetic material (Fig. 6 Item 184).
As to claims 27 Taylor discloses the magnetic field sensor of claim 23, wherein the one or more solder balls (Fig. 6 Item 160) are attached to the first surface of the semiconductor die (Fig. 6 Item 166).
Conclusion
THIS ACTION IS MADE FINAL. Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to BRENT J ANDREWS whose telephone number is (571)272-6101. The examiner can normally be reached 10am-5pm.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Judy Nguyen can be reached at (571)272-2258. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/BRENT J ANDREWS/Examiner, Art Unit 2858
/JUDY NGUYEN/Supervisory Patent Examiner, Art Unit 2858
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