Prosecution Insights
Last updated: July 17, 2026
Application No. 18/604,433

SEMICONDUCTOR DEVICE

Non-Final OA §103
Filed
Mar 13, 2024
Priority
Mar 15, 2023 — JP 2023-040559
Examiner
NGUYEN, HIEU P
Art Unit
Tech Center
Assignee
LAPIS Technology Co., Ltd.
OA Round
1 (Non-Final)
92%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
97%
With Interview

Examiner Intelligence

Grants 92% — above average
92%
Career Allowance Rate
1134 granted / 1232 resolved
+32.0% vs TC avg
Moderate +5% lift
Without
With
+5.2%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 10m
Avg Prosecution
16 currently pending
Career history
1250
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
75.9%
+35.9% vs TC avg
§102
20.6%
-19.4% vs TC avg
§112
2.9%
-37.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1232 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement filed on 03/13/2024 has been considered and placed in the application file. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1 and 9-10 are rejected under 35 U.S.C. 103 as being unpatentable over OGURA (U.S. 2018/0224876) Regarding claim 1, OGURA (hereinafter, Ref~876) discloses (please see Fig. 9 and related text for details) a semiconductor device (device from Fig. 9), comprising: an output terminal (OUT of Fig. 9) that outputs an output voltage (Vout of Fig. 9); a bipolar transistor (please note that FET are being used instead of the claimed BJT. However, it would have been obvious to one skilled in the art to choose/replace BJTs over FETs in order to handle larger current and/or to obtain higher gain at least) that outputs a collector current according to an amount of a base current and supplies the collector current to an output node to which the output terminal is connected; a bias current generation part (Pm/18/SW1/14 of Fig. 9 can be read as the claimed part) that comprises a first node (see common node of 12/14/N1/N2 of Fig. 9), a first constant current source (12 of Fig. 9) connected to the first node, and a first transistor (please note that SW1 of Fig. 9 would likely be N type transistor as shown in various embodiments, for instance, see N3 of Fig. 7) connected in parallel with the first constant current source with respect to the first node, and generates (via drain of transistor SW1 of Fig. 9) a bias current; a differential input part (centered by N1/N2/P1/P2 of Fig. 9) that comprises a differential pair (N1/N2 of Fig. 9) and a second node (node V2 of Fig. 2 ), wherein a current corresponding to the bias current generated by the bias current generation part flows through the differential pair, and a reference voltage (VREF of Fig. 9) and a voltage (VFB of Fig. 9) corresponding to the output voltage are input to the differential pair, and the differential pair generates at the second node a control voltage (V2 of Fig. 9) according to a difference between the reference voltage and the voltage corresponding to the output voltage; and a drive part (P3/34 of Fig. 9) that comprises a current supply circuit (34 of Fig. 9), a third node (V3 of Fig. 9) to which a base of the bipolar transistor is connected, and a second transistor (P3 of Fig. 9) controlling a potential of the third node according to the control voltage, wherein the first transistor controls the bias current generated by the bias current generation part according to the control voltage of the differential input part as seen, meeting claim 1. Regarding claim 9, Ref~876 discloses the semiconductor device according to claim 1, wherein the current supply circuit of the drive part is a constant current source or a resistor as seen, meeting claim 9. Regarding claim 10, Ref~876 supports the claimed “wherein the differential input part decreases a current flowing through the first transistor to decrease the bias current of the bias current generation part in response to a load (LOAD 2 of Fig. 9) connected to the output terminal changing to a light load, and increases the current flowing through the first transistor to increase the bias current of the bias current generation part in response to the load connected to the output terminal changing to a high load”, since it is configured in the same manner compared to the claimed one, meeting claim 10. Allowable Subject Matter Claims 2-8 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to HIEU P NGUYEN whose telephone number is 571-272-8577. The examiner can normally be reached on Monday-Friday 8:30AM-6:00PM. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, YOUNGHUIE HAN (Jessica) can be reached on 571-272-2078. The fax phone number for the organization where this application or proceeding is assigned is 703-872-9306. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). /HIEU P NGUYEN/Primary Examiner, Art Unit 2843
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Prosecution Timeline

Mar 13, 2024
Application Filed
Jun 03, 2026
Non-Final Rejection mailed — §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
92%
Grant Probability
97%
With Interview (+5.2%)
1y 10m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1232 resolved cases by this examiner. Grant probability derived from career allowance rate.

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