Prosecution Insights
Last updated: April 19, 2026
Application No. 18/616,065

Nanostructured Copper for Electromagnetic Interference Shielding and Method for same

Non-Final OA §102§103§112
Filed
Mar 25, 2024
Examiner
NGUYEN, DONGHAI D
Art Unit
3729
Tech Center
3700 — Mechanical Engineering & Manufacturing
Assignee
The Research Foundation for the State University of New York
OA Round
1 (Non-Final)
75%
Grant Probability
Favorable
1-2
OA Rounds
3y 2m
To Grant
99%
With Interview

Examiner Intelligence

Grants 75% — above average
75%
Career Allow Rate
661 granted / 878 resolved
+5.3% vs TC avg
Strong +29% interview lift
Without
With
+29.4%
Interview Lift
resolved cases with interview
Typical timeline
3y 2m
Avg Prosecution
21 currently pending
Career history
899
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
46.6%
+6.6% vs TC avg
§102
33.0%
-7.0% vs TC avg
§112
17.0%
-23.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 878 resolved cases

Office Action

§102 §103 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Group I (claims 1-13) in the reply filed on December 11, 2025 is acknowledged. Specification A new title is required that is clearly indicative of the ELECTED invention to which the claims are directed. The following title is suggested: METHOD OF APPLYING COPPER NANOPLATES TO A SUBSTRATE--. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Regarding claim 13, the phrase "for example" (line 2) renders the claim indefinite because it is unclear whether the limitation(s) following the phrase are part of the claimed invention. See MPEP § 2173.05(d). Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 6-9 and 12-13 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by U.S. Patent 11,246,247 to Choi et al. Regarding claim 1, Choi et al disclose a method of applying an electromagnetic interference (EMI) shield to a substrate (10, see Fig. 1), comprising: depositing a layer of ink (100) onto the substrate (10), the ink comprising copper (Cu) nanoplates (20) and a solvent (see Col. 2, lines 14-16); evaporating the solvent from the deposited layer (see Col. 2, lines 55-58); and sintering the deposited layer to form an EMI shield (see Col. 2, lines 23-27). Regarding claim 6, Choi et al disclose depositing the layer comprises: extruding the ink through a nozzle; and spreading the ink on the substrate (see Col. 6, lines 55-58). Regarding claims 6 and 13, Choi et al disclose the deposited layer has a thickness of at least 50 µm and the EMI shield has a thickness of at least 2 µm, for example, between 2 µm and 10 µm, inclusive (see Col. 2, lines 33-35). Regarding claim 8, Choi et al disclose the substrate is flexible (see Col. 7, line 23-30). Regarding claim 9, Choi et al disclose the sintering uses a forming gas (see Col. 16, lines 36-41). Regarding claim 12, Choi et al disclose the ink composition is such that the resulting EMI shield has a conductivity of at least 1 MS/m (inherent because Choice disclosed all the processing steps and material as claimed). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 2-5 and 10-11 are rejected under 35 U.S.C. 103 as being unpatentable over Choi et al. Choi et al disclose the solvent (see Col. 6, lines 30-33), ink having nickel (see Col. 5, line 49) and using copper nanoparticles, copper nanowires (see Col. 11, lines 40-42) except for the solvent is water (claim 2), hydroxypropyl methylcellulose (HPMC, claim 3), a nickel formate solution (claim 4), ethylenediamine (EDA) and water (claim 5) and having copper nanoparticles, copper nanowires, or both (claim 10) and the copper nanoplates make up between 1 and 30 wt %, inclusive. It would have been obvious matter of desire choice to one having ordinary skill in the art before the effective filing date of the claimed invention to modify the ink of the invention by choosing any desire material as a solvent such as is water, hydroxypropyl methylcellulose, a nickel formate solution or ethylenediamine (EDA) and to include copper nanoparticles, copper nanowires, since Applicant have not disclose the specific material, solve any stated problem or is for any particular purposes and it appears the invention would perform equally well with the ink of Choi et al. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Prior art references cited for their general teachings of forming an electromagnetic shield on a substrate. Any inquiry concerning this communication or earlier communications from the examiner should be directed to DONGHAI D NGUYEN whose telephone number is (571)272-4566. The examiner can normally be reached M-F 9:00-5:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Thomas J. Hong can be reached at 571-272-0993. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DN/ /DONGHAI D NGUYEN/February 21, 2026 Primary Examiner, Art Unit 3729
Read full office action

Prosecution Timeline

Mar 25, 2024
Application Filed
Feb 21, 2026
Non-Final Rejection — §102, §103, §112 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
75%
Grant Probability
99%
With Interview (+29.4%)
3y 2m
Median Time to Grant
Low
PTA Risk
Based on 878 resolved cases by this examiner. Grant probability derived from career allow rate.

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