Prosecution Insights
Last updated: July 17, 2026
Application No. 18/650,121

POWER SEMICONDUCTOR DEVICE

Non-Final OA §112
Filed
Apr 30, 2024
Priority
Oct 30, 2020 — CN 202011190506.5 +1 more
Examiner
RAHMAN, KHATIB A
Art Unit
2818
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Invinci Semiconductor Corporation
OA Round
1 (Non-Final)
91%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 91% — above average
91%
Career Allowance Rate
426 granted / 468 resolved
+23.0% vs TC avg
Moderate +5% lift
Without
With
+5.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
17 currently pending
Career history
489
Total Applications
across all art units

Statute-Specific Performance

§103
72.2%
+32.2% vs TC avg
§102
11.6%
-28.4% vs TC avg
§112
13.8%
-26.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 468 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-8, 12-20 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 1 in line 28 recites “wherein the contact metal layer (118, FIG. 2B) continuously covers the second doped region (116) and plurality of termination electrodes (107a-d & 112a-d) from the device electrode (111a/111b). Referring to FIG. 2B, it is unclear how [118] continuously covers [116] and [107a-d & 112a-d] from the device electrode (111a-b). Also it is not clear if “plurality of termination electrodes” referring to “a plurality of termination electrodes” in claim 1 in line 12 or different termination electrodes. FIG. 2B shows , [118] continuously covers [116], [107a-d & 112a-d] and [111a-b]. For examination purpose, examiner is interpreting the limitation as “wherein the contact metal layer continuously covers the second doped region [[and]], the plurality of termination electrodes [[from]] and the device electrode(111a/111b). Claims 2-8 are rejected being dependent on claim 1. Claim 12 recites “a first end termination electrode” in line 2-3 and “a second end termination electrode” in line 3. It is not clear if each of them is part of “a plurality of termination electrodes” as recited in claim 9 in line 14 or different termination electrode. For examination purpose examiner is interpreting the limitation as “a first end termination electrode of the plurality of termination electrodes” and “a second end termination electrode of the plurality of termination electrodes” respectively and accordingly interpreting the entire limitation as “wherein each of the plurality of separated electrodes, the second doped region, and a lower electrode of a first end termination electrode of the plurality of termination electrodes, a lower electrode of a second end termination electrode of the plurality of termination electrodes, and an upper electrode of a first middle termination electrode of the plurality of termination electrodes are electrically connected to the contact metal layer through a contact plug, and an isolating liner is located on sidewall of the contact plug. Claims 13-17 are rejected being dependent on claim 12. Claim 17 further recites “the first end termination electrode” in line 3 and “the second end termination electrode” in line 5. It is not clear if each of them is part of “a plurality of termination electrodes” as recited in claim 9 in line 14 or different termination electrode. For examination purpose examiner is interpreting the limitation as “the first end termination electrode of the plurality of termination electrodes” and “the second end termination electrode of the plurality of termination electrodes” respectively and accordingly interpreting the entire limitation as “wherein the boundary doped region is in contact with a top sidewall of one of the plurality of second dielectric layers on a sidewall of the first end termination electrode of the plurality of termination electrodes; and the annular doped region is in contact with a top sidewall of another one of the plurality of second dielectric layers on a sidewall of the second end termination electrode of the plurality of termination electrodes”. Claim 18 in line 15 recites “a first end termination electrode” and “a second end termination electrode”. It is not clear if each of them recites is part of “a plurality of termination electrodes” as recited in claim 18 in line 10 or different termination electrode. For examination purpose examiner is interpreting the limitation as “a first end termination electrode of the plurality of termination electrodes” and “a second end termination electrode of the plurality of termination electrodes” respectively and accordingly interpreting the entire limitation as “wherein a first end termination electrode of the plurality of termination electrodes , a second end termination electrode of the plurality of termination electrodes, and a first middle termination electrode of the plurality of termination electrodes are electrically connected to the contact metal layer”. Claims 19-20 are rejected being dependent on claim 18. Claim 19 further recites “the first end termination electrode”, “the second end termination electrode” and “the first middle termination electrode” in lines 1-3. It is not clear if each of them is part of “a plurality of termination electrodes” as recited in claim 18 in line 10 or different termination electrode. For examination purpose examiner is interpreting the limitations as “a first end termination electrode of the plurality of termination electrodes”, “a second end termination electrode of the plurality of termination electrodes” and “the first middle termination electrode of the plurality of termination electrodes” respectively and accordingly reading the entire limitation as “wherein each of a lower electrode of the first end termination electrode of the plurality of termination electrodes , a lower electrode of the second end termination electrode of the plurality of termination electrodes, and an upper electrode of the first middle termination electrode of the plurality of termination electrodes are electrically connected to the contact metal layer through a contact plug, and an isolating liner is located on sidewall of the contact plug” Claim 20 is further rejected being dependent on claim 19. Claim 20 in lines 2-3 further recites “wherein the second middle termination electrode is located between the first middle termination electrode”. It is not clear what is meant by “between the first middle termination electrode” since the term “between” requires two elements to interpret. For examination purpose, examiner is interpreting the limitation “wherein a second middle termination electrode (112c & 107c, FIG. 2B) of the plurality of termination electrodes are not electrically connected to the contact metal layer (118), wherein the second middle termination electrode is located between the first middle termination electrode (112b/107b, FIG. 2B) and the second end termination electrode (112d & 107d)” Allowable Subject Matter Claim 1 is objected to but would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action With respect to claims 1, the prior art of record does not appear to teach, suggest, or provide motivation for combination to following limitation: “wherein the contact metal layer is not in contact with the first doped region;……….a first contact plug, passing through and electrically isolated from a first upper electrode to electrically contact a first lower electrode of a first termination electrode of the plurality of termination electrodes; a second contact plug, passing through and electrically isolated from a second upper electrode to electrically contact a second lower electrode of a second termination electrode of the plurality of termination electrodes; and a third contact plug, electrically contacting a third upper electrode and isolating from a third lower electrode of a third termination electrode of the plurality of termination electrodes, wherein the third termination electrode is located between the first termination electrode and the second termination electrode, wherein the first contact plug, the second contact plug and the third contact plug are electrically connected to the contact metal layer, wherein the contact metal layer continuously covers the second doped region and plurality of termination electrodes from the device electrode” Regarding claim 1, Lui ( US 2019/0393218 A1) teaches, PNG media_image1.png 411 959 media_image1.png Greyscale A power semiconductor device (Fig. 5X as annotated above) comprising: an epitaxial layer of a first conductivity type (N type 310 as marked, para [0049], Fig. 5A) on a substrate (314, FIG. 5A, para [0049]), comprising an active region (as marked) and a termination region (as marked); a first doped region of a second conductivity type (322 of P type, para [0026]), located in the epitaxial layer in the active region; a second doped region of the first conductivity type (N type 312, para [0027]), located in the first doped region; a contact metal layer(source metal layer comprising 302/302”/302’/302””, para [0029]), located on the epitaxial layer and being in electrically connected to the second doped region (302 may be electrically connected to 312 via metal contact 342, see para [0029], Fig. 5X above), …….…a device electrode (332 as marked, para [0028], Fig. 5M), located in a device trench (318 as marked, para [0049], Fig. 5L) in the epitaxial layer in the active region and electrically isolated from the epitaxial layer and the contact metal layer (by liner layer 544 at bottoms and sidewalls of trench 318, para [0050], FIG. 5F and by top insulator 548 as marked, para [0054]); a plurality of termination electrodes (comprising 332’ & 334 as marked above, para [0028], Fig. 5M), respectively located in a plurality of termination trenches (as marked) in the epitaxial layer in the termination region and electrically isolated from the epitaxial layer (by linear layer 544 at bottom and side wall of the termination trench), wherein each of the plurality of termination electrodes comprises a lower electrode (334, see as marked above) and an upper electrode (332’, see as marked above), and the upper electrode is disposed over and isolated from the lower electrode (see FIG. 5M); But Lui fails to teach, wherein the contact metal layer is not in contact with the first doped region; a first contact plug, passing through and electrically isolated from a first upper electrode to electrically contact a first lower electrode of a first termination electrode of the plurality of termination electrodes; a second contact plug, passing through and electrically isolated from a second upper electrode to electrically contact a second lower electrode of a second termination electrode of the plurality of termination electrodes; and a third contact plug, electrically contacting a third upper electrode and isolating from a third lower electrode of a third termination electrode of the plurality of termination electrodes, wherein the third termination electrode is located between the first termination electrode and the second termination electrode, wherein the first contact plug, the second contact plug and the third contact plug are electrically connected to the contact metal layer, wherein the contact metal layer continuously covers the second doped region and plurality of termination electrodes from the device electrode. The other cited arts, either alone or in combination, does not apear to cure deficiencies of Lui. Claims 2-8 are objected to being dependent on claim 1. Claims 9-11 are allowed. With respect to claim 9 , the prior art made of record does not teach or suggest either alone or in combination “a contact metal layer, located over the epitaxial layer and isolated from plurality of device electrodes…..,wherein the contact metal layer continuously covers the active region and the termination region” in further combination with the additionally claimed limitations, as they are claimed by the Applicant. Regarding claim 9, Lui ( US 2019/0393218 A1) teaches, A power semiconductor device (Fig. 5X as annotated above) comprising: an epitaxial layer of a first conductivity type (N type 310 as marked, para [0049], Fig. 5A) on a substrate of the first conductivity type, comprising an active region (as marked) and a termination region (as marked) ; a plurality of device electrodes (332 as marked, para [0028], Fig. 5M), respectively located in a plurality of device trenches (318 as marked, para [0049], Fig. 5L) in the epitaxial layer in the active region and electrically isolated from the epitaxial layer (by liner layer 544 at bottoms and sidewalls of trench 318, para [0050]); a plurality of separated electrodes (334 as marked in FIG. 5M above), respectively located below the plurality of device electrodes in the plurality of device trenches, wherein the plurality of separated electrodes are electrically isolated from the plurality of device electrodes (by inter-gate insulating material 546 in between 332 & 334, Fig. 5N, para [0051]) and the epitaxial layer (by liner layer 544 at bottom and sidewall of the device trench) and ; a first doped region of a second conductivity type (322 of P type, para [0026]), located between the plurality of device electrodes and in the epitaxial layer in the active region; a second doped region of the first conductivity type (N type 312, para [0027]), located in the first doped region; a contact metal layer (source metal layer 302/302”/302’/302””, para [0029]), located over the epitaxial layer and isolated from plurality of device electrodes (by top insulator 548 as marked); and a plurality of termination electrodes (comprising 332’ & 334 as marked above, para [0028], Fig. 5M), respectively located in a plurality of termination trenches (as marked) in the epitaxial layer in the termination region and electrically isolated from the epitaxial layer (by linear layer 544 at bottom and side wall of the termination trench), wherein each of the plurality of termination electrodes comprises a lower electrode (334) and an upper electrode (332’), and the upper electrode is disposed over and isolated from the lower electrode (as seen in FIG. 5M), But Lui fails to teach, …...wherein the contact metal layer continuously covers the active region and the termination region. The other cited arts, either alone or in combination, fails to cure deficiencies of Lui. Claims 10-11 are allowed being dependent on claim 9. Claims 12-17 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims. With respect to claim 12, the prior art of record does not appear to teach, suggest, or provide motivation for combination to following limitation: wherein each of the plurality of separated electrodes, the second doped region, and a lower electrode of a first end termination electrode, a lower electrode of a second end termination electrode, and an upper electrode of a first middle termination electrode of the plurality of termination electrodes are electrically connected to the contact metal layer through a contact plug, and an isolating liner is located on sidewall of the contact plug(claim 12). Claim 13-17 are objected to being dependent on claim 12. Claim 18 is objected to but would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action With respect to claims 18, the prior art of record does not appear to teach, suggest, or provide motivation for combination to following limitation: “a contact metal layer, located on the insulating layer and continuously covering the active region and the termination region…..and wherein a first end termination electrode, a second end termination electrode, and a first middle termination electrode of the plurality of termination electrodes are electrically connected to the contact metal layer”. Regarding claim 18, Lui ( US 2019/0393218 A1) teaches, A power semiconductor device (Fig. 5X as annotated above) comprising: an epitaxial layer of a first conductivity type (N type 310 as marked, para [0049], comprising an active region (as marked) and a termination region (as marked); a plurality of trench devices (device associated with device electrode 332 as marked), respectively located in a plurality of device trenches (318 as marked above, para [0049], Fig. 5L) in the epitaxial layer in the active region; an insulating layer (top insulator 548 as marked) , located on the epitaxial layer in the active region and the termination region; a contact metal layer (source metal layer 302/302”/302’/302””, para [0029]), located on the insulating layer………….and.; a plurality of termination electrodes(comprising 332’ & 334 as marked above, para [0028], Fig. 5M), respectively located in a plurality of termination trenches (as marked above) in the epitaxial layer in the termination region and electrically isolated from the epitaxial layer( by linear layer 544 at bottom and side wall of the termination trench), wherein each of the plurality of termination electrodes comprises a lower electrode (334, FIG. 5M) and an upper electrode(332’), and the upper electrode is disposed over and isolated from the lower electrode (FIG. 5M); and wherein a first end termination electrode (comprising the upper and lower electrode as marked above) , …………of the plurality of termination electrodes are electrically connected to the contact metal layer (upper electrode is connected to 302’ as seen). But Lui fails to teach or suggest, ……a second end termination electrode, and a first middle termination electrode of the plurality of termination electrodes are electrically connected to the contact metal layer; the contact metal layer continuously covering the active region and the termination region The other cited arts, either alone or in combination, does not appear to cure deficiencies of Lui. Claims 19-20 are objected to being dependent on claim 18. Claims 19-20 are further objected to but would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims. With respect to claims 19 the prior art of record does not appear to teach, suggest, or provide motivation for combination to following limitation: wherein each of a lower electrode of the first end termination electrode, a lower electrode of the second end termination electrode, and an upper electrode of the first middle termination electrode are electrically connected to the contact metal layer through a contact plug, and an isolating liner is located on sidewall of the contact plug (claim 19). wherein a second middle termination electrode of the plurality of termination electrodes are not electrically connected to the contact metal layer, wherein the second middle termination electrode is located between the first middle termination electrode (claim 20) Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to KHATIB A RAHMAN whose telephone number is (571)270-0494. The examiner can normally be reached on MON-FRI 8:00 am- 5:00 pm (Arizona). Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor Steven Loke, can be reached on (571) 272-1657. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /K.A.R/Examiner, Art Unit 2818 /CUONG B NGUYEN/Primary Examiner, Art Unit 2818
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Prosecution Timeline

Apr 30, 2024
Application Filed
Jun 23, 2026
Non-Final Rejection mailed — §112 (current)

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Prosecution Projections

1-2
Expected OA Rounds
91%
Grant Probability
96%
With Interview (+5.1%)
2y 2m (~0m remaining)
Median Time to Grant
Low
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