Prosecution Insights
Last updated: October 02, 2026
Application No. 18/653,339

SEMICONDUCTOR DEVICE

Non-Final OA §112
Filed
May 02, 2024
Priority
Dec 08, 2021 — JP 2021-199503 +2 more
Examiner
NGUYEN, SOPHIA T
Art Unit
Tech Center
Assignee
Rohm Co., Ltd.
OA Round
1 (Non-Final)
45%
Grant Probability
Moderate
1-2
OA Rounds
4m
Est. Remaining
59%
With Interview

Examiner Intelligence

Grants 45% of resolved cases
45%
Career Allowance Rate
236 granted / 528 resolved
-15.3% vs TC avg
Moderate +14% lift
Without
With
+14.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 9m
Avg Prosecution
71 currently pending
Career history
617
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
53.6%
+13.6% vs TC avg
§102
14.6%
-25.4% vs TC avg
§112
26.5%
-13.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 528 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Priority Acknowledgment is made of applicant’s claim for foreign priority under 35 U.S.C. 119 (a)-(d) to foreign application JP2021199503 filed on 12/08/2021 and foreign application JP2021199504 filed on 12/08/2021. The foreign applications are not in English. The certified copy of the foreign priority application JP2021199503 and the certified copy of the foreign application JP2021199504 have been received. Filing Dates for the Claims — All Claims Not Entitled to Priority Date To be entitled to the filing date of the foreign priority application JP2021199503 that is not in English, an English translation of the non-English language foreign application JP2021199503 and a statement that the translation is accurate in accordance with 37 CFR 1.55 is required to perfect the claim for priority under 35 U.S.C. 119 (a)-(d). To be entitled to the filing date of the foreign priority application JP2021199504 that is not in English, an English translation of the non-English language foreign application JP2021199504 and a statement that the translation is accurate in accordance with 37 CFR 1.55 is required to perfect the claim for priority under 35 U.S.C. 119 (a)-(d). The foreign application must adequately support the claimed subject matter, meaning satisfy the written description and enablement requirements of 35 U.S.C. 112(a). See MPEP §§ 215 and 216. 37 C.F.R. 1.55(g)(3)(ii)-(iii). To demonstrate compliance with 35 U.S.C. 112(a), applicant should point to support for their claimed subject matter in their translations. Election/Restrictions Applicant’s election of species 4, Fig. 25, claims 1-4, 9, 18-20 in the reply filed on 07/20/2026 is acknowledged. Because applicant did not distinctly and specifically point out the supposed errors in the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.01(a)). Regarding claim 8, claim 8 reads on elected species 4, Fig. 25. Thus, claim 8 will be examined. Regarding claim 9, claim 9 does not read on species 4, Fig. 25 because claim 9 requires “a second pitch which is larger than the first pitch” which shown in non-elected species 7 of Fig. 31. Therefore, claim 9 is withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected species. Accordingly, claims 5-7, 9-17 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected species, there being no allowable generic or linking claim. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-4, 8, 18-20 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Regarding claim 1, claim 1 recites “the opposite side”, “the first principal surface of the diode region”, “the mutually adjacent first trenches”, “the first trench”, “the bottom walls of the mutually adjacent first trenches”. There is insufficient antecedent basis for these limitations in the claim. Regarding claim 2, claim 2 recites “the plurality of diode cell regions”, “the bottom walls of the plurality of first trenches”, “the second principal surface side”, “the first portions of the plurality of diode cell regions.” There is insufficient antecedent basis for these limitations in the claim. Regarding claim 3, claim 3 recites “the first principal surface side”. There is insufficient antecedent basis for this limitation in the claim. Regarding claim 8, claim 8 recites “the first principal surface of the IGBT region.” There is insufficient antecedent basis for this limitation in the claim. Regarding claim 20, claim 8 recites “the plurality of IGBT regions”, “the plurality of diode regions”. There is insufficient antecedent basis for these limitations in the claim. Claims depending from the rejected claims noted above are rejected at least on the same basis as the claim(s) from which the dependent claims depend. Appropriate correction is required. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Hosoya et al. (US Pub. 20210050344) discloses a device including a IGBT region, diode region, plurality of trenches in the diode region. Impurity regions formed at a surface layer portion in the diode region that extend deeper than a bottom wall of the trenches in the diode region. Any inquiry concerning this communication or earlier communications from the examiner should be directed to SOPHIA T NGUYEN whose telephone number is (571)272-1686. The examiner can normally be reached 9:00am -5:00 pm, Monday-Friday. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, BRITT D HANLEY can be reached at (571)270-3042. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SOPHIA T NGUYEN/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

May 02, 2024
Application Filed
Sep 09, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12745422
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
4y 2m to grant Granted Sep 22, 2026
Patent 12720862
DISPLAY DEVICE
5y 0m to grant Granted Aug 25, 2026
Patent 12696633
DISPLAY DEVICE
4y 6m to grant Granted Jul 28, 2026
Patent 12677509
DISPLAY DEVICE INCLUDING INSULATING LAYER ON LIGHT-EMITTING ELEMENTS
4y 6m to grant Granted Jul 07, 2026
Patent 12676615
DIGITAL LOGIC COMPATIBLE INPUTS IN COMPOUND SEMICONDUCTOR CIRCUITS
4y 5m to grant Granted Jul 07, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
45%
Grant Probability
59%
With Interview (+14.4%)
2y 9m (~4m remaining)
Median Time to Grant
Low
PTA Risk
Based on 528 resolved cases by this examiner. Grant probability derived from career allowance rate.

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