DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application is being examined under the pre-AIA first to invent provisions.
Double Patenting
The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969).
A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b).
The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13.
The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer.
Claims 2-11, 18, and 20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-8, 10, 12, and 13 of U.S. Patent No. 12,297,153. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact comprising a polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, wherein the plurality of diamond grains exhibit an average grain size of about 5 microns to about 50 microns, wherein the polycrystalline diamond table includes an unleached portion including: a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst present in the unleached portion in an amount of about 3 wt% to about 7.5 wt%; a portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a coercivity of about 115 Oe to about 250 Oe; and the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific magnetic saturation of about 5 to about 15 Gauss.cm3/grams.
Additionally, claim 12 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, wherein the plurality of diamond grains exhibit an average grain size of about 5 µm to about 30 µm; wherein the polycrystalline diamond table is formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 Gpa wherein the polycrystalline diamond table includes an unleached volume exhibiting a Gratio of at least about 4.0×106; wherein the polycrystalline diamond table includes an unleached portion including: a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst present in the unleached portion in an amount of about 3 weight % to about 7.5 weight %; a portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a coercivity of about 115 Oersteds (“Oe”) to 250 Oe; the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific magnetic saturation of about 5 Gauss.cm3/grams (“G.cm3/g”) to 15 G.cm3/g; and a substrate bonded to the polycrystalline diamond table.
In addition, Claim 13 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, wherein the plurality of diamond grains exhibit an average grain size of about 5 µm to about 20 µm; and a substrate bonded to the polycrystalline diamond table wherein the polycrystalline diamond table includes an unleached volume, the unleached volume exhibiting a Gratio of at least about 8.0×106; wherein the polycrystalline diamond table includes an unleached portion includes: a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst present in the unleached portion in an amount of about 3 weight % to about 7.5 weight %; a portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a coercivity of about 115 Oersteds (“Oe”) to 250 Oe; the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific magnetic saturation of about 10 Gauss.cm3/grams (“G.cm3/g”) to 15 G.cm3/g; and the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific permeability of about 0.060 G.cm3/g.Oe to about 0.090 G.cm3/g.Oe.
The cumulative limitations of the claims of the cited patent reads on and/or render obvious the claims of the present Application under examination as well.
Claims 2-11, 18, and 20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 3-10, 12-19 and 21-26 of U.S. Patent No. 10,703,681. Although the claims at issue are not identical, they are not patentably distinct from each other because the claims of the cited patent a polycrystalline diamond compact, comprising: a polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, wherein at least some of the plurality of diamond grains exhibit an average grain size of about 10 µm to about 18 µm; wherein the polycrystalline diamond table is formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa wherein the polycrystalline diamond table includes an unleached volume exhibiting a Gratio of at least about 15.0x10⁶; wherein the polycrystalline diamond table includes an unleached portion including: a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions in an amount of about 3 weight % to 7.5 weight %; a portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a coercivity of about 115 Oersteds ("Oe") to 250 Oe; the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific magnetic saturation of about 5 Gauss.cm³/grams ("G.cm³/g") to 15 G.cm³/g; and a substrate bonded to the polycrystalline diamond table.
Additionally, claim 10 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, wherein at least some of the plurality of diamond grains exhibit an average grain size of about 20 µm or less; and a substrate bonded to the polycrystalline diamond table wherein the polycrystalline diamond table includes an unleached volume, the unleached volume exhibiting a Gratio of at least about 15.0x10⁶; wherein the polycrystalline diamond table includes an unleached portion includes: a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, in an amount of about 3 weight % to 7.5 weight %; a portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a coercivity of about 115 Oersteds ("Oe") to 250 Oe; the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific magnetic saturation of about 10 Gauss.cm³/grams ("G.cm³/g") to 15 G.cm³/g; the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific permeability of about 0.1 G.cm³/g.Oe or less.
Moreover, claim 19 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate; and a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, wherein at least some of the plurality of diamond grains exhibit an average grain size of about 30 µm or less; wherein the polycrystalline diamond table includes an unleached volume, at least the unleached volume exhibiting a Gratio of at least about 15.0×106; wherein the polycrystalline diamond table includes an unleached portion including: a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, in an amount of about 3 weight % to 7.5 weight %; a portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a coercivity of about 155 Oersteds (“Oe”) to 250 Oe; the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific magnetic saturation of about 10 Gauss.cm3/grams (“G.cm3/g”) to 15 G.cm3/g; the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific permeability of about 0.1 G.cm3/g.Oe or less.
Furthermore, the cumulative limitations of the claims of the cited patent read on and/or render obvious claims of the present Application under examination.
Claims 2-11, 18 and 20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 3-9, 12, 14-20, 23, 25-28, 30-31, 34-35, 39-41, 44-46, and 48 of U.S. Patent No. 9,932,274. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 10 µm to about 18 µm; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of about 3 weight % to 7.5 weight %; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds ("Oe") to 175 Oe; wherein the polycrystalline diamond table exhibits a Gratio, of at least about 10⁶; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 10 Gauss.cm³/grams ("G.cm³/g") to 15 G.cm³/g; and a substrate bonded to the interfacial surface of the polycrystalline diamond table.
Furthermore, the cumulative limitations of the claims of the cited patent read on and/or render obvious the claims of the present Application under examination.
Claims 2-11, 18, and 20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 4-12, 14-15, 19-21, 23, 26, 28-38, 40-42, 44, 47-57, and 59-60 of U.S. Patent No. 9,459,236. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface, the polycrystalline diamond table exhibiting one or more characteristics of being formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa, at least a portion of the polycrystalline diamond table including: a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 30 µm or less; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of about 7.5 weight % or less; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Ocrsteads ("Oe") or more; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 15 Gauss-cm³/grams ("G·cm³/g") or less; wherein the polycrystalline diamond table exhibits a Gratio of at least about 4.0x10⁶; and a substrate bonded to the interfacial surface of the polycrystalline diamond table; wherein the polycrystalline diamond table is formed from only a single layer of polycrystalline diamond extending from the upper exterior surface to the substrate. Claim 20 of the cited patent claims a Gratio of at least about 30x106.
In addition, claim 26 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate including a metal-solvent catalyst therein; and a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface that is bonded to the substrate, the polycrystalline diamond table being formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa, the polycrystalline diamond table being formed from only a single layer of polycrystalline diamond extending from the upper exterior surface to the substrate, at least a portion of the polycrystalline diamond table including: a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 20 µm or less; a portion of the metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst present in the at least a portion of the polycrystalline diamond table in an amount of about 1 weight % to about 6 weight %; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 15 Gauss.cm3/grams (“G.cm3/g”) or less; wherein the plurality of diamond grains and the metal-solvent catalyst collectively define a volume of at least about 0.050 cm3; and wherein the polycrystalline diamond table exhibits a Gratio of at least about 4.0×106. Claim 30 of the cited patent claim coercivity of about 155 Oe to about 175 Oe. Claim 30 of the cited patent claims a coercivity of about 155-175 Oe.
Moreover, claim 47 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate including a metal-solvent catalyst therein; and a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface that is bonded to the substrate, the polycrystalline diamond table being formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa, the polycrystalline diamond table being formed from only a single layer of polycrystalline diamond extending from the upper exterior surface to the substrate, at least a portion of the polycrystalline diamond table including: a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 30 µm or less; a portion of the metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of about 7.5 weight % or less; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteads (“Oe”) or more; wherein the plurality of diamond grains and the metal-solvent catalyst collectively define a volume of at least about 0.050 cm3, and wherein the polycrystalline diamond table exhibits a Gratio of at least about 4.0×106. Claim 51 of the cited patent claims wherein the at least a portion of the polycrystalline diamond table exhibits a specific magnetic saturation of about 15 Gauss.cm3/grams (“G.cm3/g”) or less.
Furthermore, the cumulative limitations of the claims of the cited patent read on and/or render obvious the claims of the present Application under examination.
Claims 2-11 and 17-21 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 4-11, 13-14, 18-20, 22-23, 25-32, 34-35, 37-39, 41, and 44-46 of U.S. Patent No.7,866,418. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a rotary drill bit, comprising: a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and a plurality cutting elements mounted to the bit body, at least one of the cutting elements including a polycrystalline diamond table bonded to a substrate, at least a portion of the polycrystalline diamond table including: a plurality of diamond grains defining a plurality of interstitial regions; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst present in an amount of about 1 weight % to about 6 weight %; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds ("Oe") or more; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 15 Gauss-cm³/grams ("G-cm³/g") or less; and wherein the plurality of diamond grains and the metal-solvent catalyst of the at least a portion of the polycrystalline diamond table collectively exhibit a specific permeability of about 0.060 G-cm³/g·Oe to about 0.090 G-cm³/g·Oe. The claimed rotary drill bit comprises cutting elements including polycrystalline diamond table bonded to a substrate, which reads on a polycrystalline diamond compact. Claim 18 of the cited patent claim a Gratio of at least about 4.0x106.
Additionally, claim 23 of the cited patent claims a rotary drill bit, comprising: a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and a plurality cutting elements mounted to the bit body, at least one of the cutting elements including a polycrystalline diamond table bonded to a substrate, at least an un-leached portion of the polycrystalline diamond table including: a plurality of diamond grains defining a plurality of interstitial regions; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst present in an amount of about 1 weight % to about 6 weight %; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 15 Gauss-cm³/grams ("G-cm³/g") or less; wherein the plurality of diamond grains and the metal-solvent catalyst collectively define a volume of at least about 0.050 cm³; and wherein the plurality of diamond grains and the metal-solvent catalyst of the at least an un-leached portion of the polycrystalline diamond table collectively exhibit a specific permeability of about 0.060 G.cm³/g. Oersteds to about 0.090 G.cm³/g. Oersteds. Claim 37 of the cited patent claim a Gratio of at least about 4.0x106.
The cumulative limitations of the claims of the cited patent read on and/or render obvious the limitation of the claims of the present Application under examination.
Claims 2-11, 14-15, and 17-21 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 3-13, and 16-20 of U.S. Patent No. 12,044,075. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claim a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions; a catalyst occupying at least a portion of the plurality of interstitial regions; a specific magnetic saturation of 10 G-cm³/g to 15 G-cm³/g; and a specific permeability of less than 0.10 G-cm³/g Oe. Claim 12 of the cited patent claims a Gratio of at least 4.0x106. Claim 9 in the cited patent claims the presence of a substrate.
Additionally, claim 19 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate; a polycrystalline diamond table bonded to the substrate, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions; a catalyst occupying at least a portion of the plurality of interstitial regions, wherein at least the unleached portion of the polycrystalline diamond table includes a catalyst content of the catalyst of 3 weight % to 7.5 weight %; a coercivity greater than 115 Oe to 250 Oe; a specific magnetic saturation of 10 G-cm³/g to 15 G-cm³/g; a specific permeability of 0.06 G.cm³/g. Oe to 0.09 G.cm³/g Oe; a Gratio of at least 4.0x10⁶; a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of 1300 m to 3950 m.
Furthermore, the cumulative limitations of the claims of the cited patent read on and/or render obvious the claims of the present Application under examination.
Claims 2-11 and 17-21 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-4 and 6-24 of U.S. Patent No. 10,961,785. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 10 µm to about 50 µm; a catalyst occupying at least a portion of the plurality of interstitial regions; and a coercivity greater than about 115 Oe to about 250 Oe. Claim 6 of the cited patent claims a specific magnetic saturation of greater than 0 to about 15 G.cm3/g.
Furthermore, claim 15 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 10 µm to about 30 µm; a catalyst including cobalt, the catalyst occupying at least a portion of the interstitial regions; a coercivity of about 115 Oe to about 250 Oe; and a specific magnetic saturation of about 5 G.cm3/g to about 15 G.cm3/g or less; and a substrate bonded to the polycrystalline diamond table along an interfacial surface.
The cumulative limitations of the claims of the cited patent read on and/or render obvious the claims of the present Application under examination.
Claims 2-12, 14-15, and 17-21 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 6-7, 10-11, 13-17, 20-21, and 23-26 of U.S. Patent No. 10,508,502. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 50 µm or less; and a catalyst including cobalt, the catalyst occupying at least a portion of the interstitial regions; wherein the unleached portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe to about 250 Oe; wherein the unleached portion of the polycrystalline diamond table exhibits a specific permeability less than about 0.10 G.cm³/g. Oe; and a substrate bonded to the polycrystalline diamond table along an interfacial surface, the interfacial surface exhibiting a substantially planar topography; wherein a lateral dimension of the polycrystalline diamond table is about 0.8 cm to about 1.9 cm. Claim 3 of the cited patent claims a specific magnetic saturation of about 10-15 G.cm3/g.
Furthermore, claim 18 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains bonded together via diamond-to-diamond bonding to define defining interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 50 µm or less; and a catalyst including cobalt, the catalyst occupying at least a portion of the interstitial regions; wherein the unleached portion of the polycrystalline diamond table exhibits: a coercivity of about 115 Oe to about 250 Oe; a specific magnetic saturation of about 10 G.cm³/g to about 15 G.cm³/g; and a thermal stability, as determined by a distance cut, prior to failure in a vertical lathe test, of about 1300 m to about 3950 m; wherein a lateral dimension of the polycrystalline diamond table is about 0.8 cm or more.
Moreover, claim 24 in the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 10 µm to about 18 µm; and
a catalyst including cobalt, the catalyst occupying at least a portion of the interstitial
regions; wherein the unleached portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe to about 250 Oe; wherein the unleached portion of the polycrystalline diamond table exhibits a specific permeability of about 0.060 G.cm³/g. Oe to about 0.090 G.cm³/g.Oe; and a substrate bonded to the polycrystalline diamond table along an interfacial surface, the interfacial surface exhibiting a substantially planar topography; wherein a lateral dimension of the polycrystalline diamond table is about 1.3 cm to about 1.9 cm. Claim 25 of the cited patent claims a specific magnetic saturation of about 10-15 G.cm3/g.
The cumulative limitations of the claims of the cited patent read on and/or render obvious the independent and dependent claims of the present Application under examination.
Claims 2-13, 15, and 17-21 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-2, 8-18, 20-21, 26-31, 37-44, 46-47, 49-50, 52-53, and 55-58 of U.S. Patent No. 8,297,382. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claim a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an un-leached portion of the polycrystalline diamond table including, a plurality of diamond grains defining a plurality of interstitial regions; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst present in an amount of about 1 weight % to about 6 weight %; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds ("Oe") or more and a specific magnetic saturation of about 15 Gauss.cm3/grams ("G.cm3/g") or less; wherein the polycrystalline diamond table exhibits a Gratio of at least about 4.0x106; and a substrate including an interfacial surface that is bonded to the polycrystalline diamond table, the interfacial surface exhibiting a substantially planar topography.
Moreover, claim 30 of the cited patent claims a rotary drill bit, comprising: a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and a plurality cutting elements mounted to the blades, at least one of the cutting elements including, a polycrystalline diamond table, at least an un-leached portion of the polycrystalline diamond table including, a plurality of diamond grains defining a plurality of interstitial regions; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst present in an amount of about 1 weight % to about 6 weight %; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds ("Oe") or more and a specific magnetic saturation of about 15 Gausscm.sup.3/grams ("G.cm3/g") or less; wherein the polycrystalline diamond table exhibits a Gratio of at least about 4.0x106; and a substrate including an interfacial surface that is bonded to the polycrystalline diamond table, the interfacial surface exhibiting a substantially planar topography. The rotary drill bit of claim 30 includes recitations to cutting elements including polycrystalline diamond table and substrate, which would read on a polycrystalline diamond compact.
The cumulative limitations of the claims of the cited patent read on and/or render obvious the independent and dependent claims of the present Application under examination.
Claims 2-11 and 17-21 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-3, 7-13, and 15-23 of U.S. Patent No. 12,350,792. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains directly bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 10 µm to about 50 µm; a catalyst occupying at least a portion of the plurality of interstitial regions; a portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oe to about 250 Oe; the portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a specific magnetic saturation of about 5 G.cm3/g to about 15 G.cm3/g; wherein the unleached portion of the polycrystalline diamond table exhibits an average electrical conductivity of about 25 S/m to about 1200 S/m; wherein the polycrystalline diamond table exhibits at least one of a Gratio of at least about 4.0×106 or a thermal stability, as determined by distance cut, prior to failure in a vertical lathe test, of at least about 1300 m; and a substrate bonded to the polycrystalline diamond table. Claim 15 of the cited patent claims a specific permeability of less than about 0.1 G.cm3/g.Oe.
Also, the claim 17 of the cited patent claim a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains directly bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 30 µm or less; a catalyst occupying at least a portion of the plurality of interstitial regions; an average electrical conductivity of about 25 S/m to about 1200 S/m; a coercivity of about 115 Oe to about 250 Oe; a specific magnetic saturation of about 5 G.cm3/g to about 15 G.cm3/g; and a substrate bonded to the polycrystalline diamond table; and a Gratio of at least about 4.0×106.
Moreover, claim 19 of the cited patent claim a polycrystalline diamond compact, comprising: a polycrystalline diamond table sintered exhibiting one or more characteristics of being sintered at a cell pressure of at least about 7.5 GPa, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains bonded together via diamond-to-diamond bonding to define a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 10 µm to about 18 µm; and a catalyst including cobalt, the catalyst occupying at least a portion of the plurality of interstitial regions; an average electrical conductivity of about 25 S/m to about 1200 S/m; a coercivity of about 115 Oe to about 175 Oe; a specific magnetic saturation of about 10 G.cm3/g to about 15 G.cm3/g or less; a specific permeability less than about 0.10 G.cm3/g.Oe; and a thermal stability, as determined by distance cut, prior to failure in a vertical lathe test, of at least about 1300 m; and a substrate bonded to the polycrystalline diamond table along an interfacial surface. Claim 22 claims a catalyst content of about 1-7.5 wt%.
The cumulative limitations of the claims of the cited patent read on and/or render obvious the independent and dependent claims of the present Application under examination.
Claims 2-10 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-5, 8, and 10-14 of U.S. Patent No. 10,507,565. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains directly bonded together via diamond-to-diamond bonding to define interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 50 µm or less; a catalyst occupying at least a portion of the interstitial regions; wherein the unleached portion of the polycrystalline diamond table exhibits a coercivity of about 115 Oe or more; wherein the unleached portion of the polycrystalline diamond table exhibits an average electrical conductivity of less than about 1200 S/m; and wherein the unleached portion of the polycrystalline diamond table exhibits a Gratio of at least about 4.0×106; and a substrate bonded to the polycrystalline diamond table. Claim 4 of the cited patent claim a specific magnetic saturation of about 15 G.cm3/g or less.
The cumulative limitations of the claims of the cited patent read on and/or render obvious the independent and dependent claims of the present Application under examination.
Claims 2-6 and 9-10 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-5, 8-9, 12, 15-16, 18-20 of U.S. Patent No. 9,315,881. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table exhibiting one or more characteristics of being formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa, at least a portion of the polycrystalline diamond table including: a plurality of diamond grains defining a plurality of interstitial regions, the plurality of diamond grains exhibiting an average grain size of about 30 µm or less; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount greater than 0 weight % to about 7.5 weight %; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit an average electrical conductivity of less than about 1200 S/m; wherein the polycrystalline diamond table exhibits a Gratio of at least about 4.0×106; and a substrate bonded to the polycrystalline diamond table. Claim 2 of the cited patent claims a coercivity of about 115-250 Oe, and claim 4 of the cited patent claims a specific magnetic saturation of about 5-15 G.cm3/g.
The cumulative limitations of the claims of the cited patent read on and/or render obvious the independent and dependent claims of the present Application under examination.
Claims 2-4, 7-9 and 16 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 3-4 and 12-16 of U.S. Patent No. 8,727,046. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: at least one polycrystalline diamond layer, at least a portion of the at least one polycrystalline diamond layer including: a plurality of diamond grains exhibiting an average diamond grain size of 30 µm or less and defining a plurality of interstitial regions; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds ("Oe") or more; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 15 Gauss.cm3/grams ("G.cm3/g") or less; a cemented carbide substrate; and at least one transition layer disposed between and bonded to the cemented carbide substrate and the at least one polycrystalline diamond layer, the at least one transition layer exhibiting a coefficient of thermal expansion ("CTE") that is less than a CTE of the cemented carbide substrate and greater than a CTE of the at least one polycrystalline diamond layer. Independent claim 1 of the cited patent claims at least one transition layer disposed between and bonded to the cemented carbide substrate, and dependent claim 3 of the cited patent claims the presence of at least one additive in said layer, wherein according to dependent claim 4 of the cited patent, the additive can be tungsten carbide. Thus, the transition layer as claimed in independent claim 1 of the cited patent reads on the claimed first polycrystalline diamond layer, which according to claim 16 of the present Application under examination, contains a tungsten-containing material.
The cumulative limitations of the claims of the cited patent read on and/or render obvious the independent and dependent claims of the present Application under examination.
Claims 2-4 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 8, 15, and 22 of U.S. Patent No. 8,596,387. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate; and a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table defining a substantially planar upper surface, at least one peripheral surface, and a chamfer extending between the substantially planar upper surface and the at least one peripheral surface, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including: a first region adjacent to the substrate that includes metal-solvent catalyst disposed interstitially between the bonded diamond grains thereof; and a leached second region extending inwardly from the substantially planar upper surface and the at least one peripheral surface that is depleted of the metal-solvent catalyst, the leached second region exhibiting a leach depth profile in a non-peripheral region and in a peripheral region, the leach depth profile in the non-peripheral region having a maximum leach depth that is at least about 300 µm as measured from the substantially planar upper surface, a leach depth of the leach depth profile of the non-peripheral region decreasing with lateral distance from a central axis of the polycrystalline diamond table and toward the at least one peripheral surface. Claim 8 of the cited patent claim a coercivity of about 115-250 Oe and a specific magnetic saturation of greater than 0 to about 15 G.cm3/g.
Additionally, claim 15 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate; and a pre-sintered polycrystalline diamond table integrally formed with and bonded to the substrate, the pre-sintered polycrystalline diamond table defining a substantially planar upper surface, at least one peripheral surface, and a chamfer extending between the substantially planar upper surface and the at least one peripheral surface, the pre-sintered polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the pre-sintered polycrystalline diamond table further including: a first region adjacent to the substrate that includes metal-solvent catalyst disposed interstitially between the bonded diamond grains thereof; and a leached second region extending inwardly from the upper surface, from the chamfer, and from the at least one peripheral surface, the leached second region being depleted of the metal-solvent catalyst, the leached second region exhibiting a leach depth profile having a maximum leach depth that is at least about 250 µm as measured from the substantially planar upper surface, a leach depth of the leach depth profile decreasing with lateral distance from a central axis of the pre-sintered polycrystalline diamond table and toward the at least one peripheral surface. Claim 22 of the cited patent claims a coercivity of about 115-250 Oe and a specific magnetic saturation of greater than 0 to about 15 G.cm3/g.
Claims 2-4 are rejected on the ground of nonstatutory double patenting as being unpatentable over claim 18 of U.S. Patent No. 8,790,430. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 18 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate; and a polycrystalline diamond table including an interfacial surface bonded to the substrate and a generally opposing upper surface, the polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the polycrystalline diamond table further including: a first region extending inwardly from the upper surface and including a copper-tin alloy disposed in at least a first portion of the plurality of interstitial regions; and a second region extending inwardly from the interfacial surface and including a nickel-containing material disposed in at least a second portion of the plurality of interstitial regions; wherein the plurality of diamond grains and the nickel-containing material of the second region collectively exhibit a coercivity of 115 Oesrsteds or more and a specific magnetic saturation of about 15 Gauss.cm3/grams ("G.cm3/g") or less.
Claims 2-4 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 5, 15-16, 21, 23-24 and 26 of U.S. Patent No. 9,027,675. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 1 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate; and a polycrystalline diamond table including an upper surface spaced from a back surface that is bonded to the substrate, the polycrystalline diamond table including a plurality of bonded-together diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including: a thermally-stable first region extending inwardly from the upper surface and spaced from the substrate by a standoff, the thermally-stable first region including aluminum carbide disposed in at least a portion of the plurality of interstitial regions thereof, the aluminum carbide occupying substantially all of the plurality of interstitial regions of the thermally-stable first region; and a second region extending inwardly from the back surface and about which the thermally-stable first region extends, the second region including a metallic constituent disposed in at least a portion of the plurality of interstitial regions thereof, the second region exhibiting a coercivity of about 115 Oe to about 250 Oe and a specific magnetic saturation of greater than 0 G.cm3/ g to about 15 G.cm3/g.
Moreover, claim 21 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate; and a polycrystalline diamond table including an upper surface spaced from a back surface that is bonded to the substrate, the polycrystalline diamond table including a plurality of bonded-together diamond grains defining a plurality of interstitial regions and exhibiting diamond-to-diamond bonding therebetween, the polycrystalline diamond table further including: a thermally-stable first region extending inwardly from the upper surface and spaced from the substrate by a standoff, the thermally-stable first region including aluminum carbide disposed in at least a portion of the plurality of interstitial regions thereof, the aluminum carbide occupying substantially all of the plurality of interstitial regions of the thermally-stable first region, the thermally-stable first region further including a residual amount of metallic catalyst present in an amount of about 0.8 weight % to about 1.5 weight %; and a second region extending inwardly from the back surface and about which the thermally-stable first region extends, the second region including a metallic constituent disposed in at least a portion of the plurality of interstitial regions thereof, the second region exhibiting a coercivity of about 115 Oe to about 250 Oe and a specific magnetic saturation of greater than 0 G.cm3/g to about 15 G.cm3/g.
Additionally, claim 26 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate; and a polycrystalline diamond table including an upper surface spaced from a back surface that is bonded to the substrate, the polycrystalline diamond table including a plurality of bonded-together diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including: a thermally-stable first region extending inwardly from the upper surface and spaced from the substrate by a standoff, the thermally-stable first region exhibiting a generally annular geometry, the thermally-stable first region including aluminum carbide disposed in at least a portion of the plurality of interstitial regions thereof; and a second region extending inwardly from the back surface and about which the thermally-stable first region extends, the second region including a metallic constituent disposed in at least a portion of the plurality of interstitial regions thereof, the second region exhibiting a coercivity of about 115 Oe to about 250 Oe and a specific magnetic saturation of greater than 0 G.cm3/g to about 15 G.cm3/g.
The cumulative limitations of the claims of the cited patent read on and/or render obvious the independent and dependent claims of the present Application under examination.
Claims 2-4 and 9-10 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 19 and 28-31 of U.S. Patent No. 9,765,572. Although the claims at issue are not identical, they are not patentably distinct from each other because claim 19 of the cited patent claims a polycrystalline diamond compact, comprising: a substrate; and a polycrystalline diamond table including an upper surface spaced from an interfacial surface that is bonded to the substrate, the polycrystalline diamond table including a plurality of diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including an alloy comprising at least one Group VIII metal and at least one Group V element, the alloy being disposed in at least a portion of the plurality of interstitial regions, the at least one Group V element exhibiting a concentration gradient between the upper surface and the interfacial surface that generally decreases with distance from the upper surface, the plurality of diamond grains and the alloy of at least a portion of the polycrystalline diamond table collectively exhibiting a coercivity of about 115 Oersteds or more. Claim 28 claims a coercivity of about 115-250 Oe, and claim 29 of the cited patent claims a specific magnetic saturation of about 15 G.cm3/g or less. The alloy claimed in claim 19 reads on the claimed catalyst of claim 1 of the present Application under examination.
Claims 2-4, 7-8, 11-14, 18, and 20 are provisionally rejected on the ground of nonstatutory double patenting as being unpatentable over claims 2, 4-9, 11-21 of copending Application No. 19/177,946 (reference application). Although the claims at issue are not identical, they are not patentably distinct from each other because .
This is a provisional nonstatutory double patenting rejection because the patentably indistinct claims have not in fact been patented.
Claim 2 of the copending Application claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, wherein at least some of the plurality of diamond grains exhibit an average grain size of about 5 µm to about 50 µm; wherein the polycrystalline diamond table includes an unleached portion including: a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions; a portion of the plurality of diamond grains and the metal-solvent catalyst collectively exhibiting a coercivity of about 115 Oersteds ("Oe") to 250 Oe; a specific permeability of about 0.10 Gauss:cm³/grams:Oe ("G-cm³/g-Oe") or less; and a substrate bonded to the polycrystalline diamond table wherein a lateral dimension of the polycrystalline diamond table is about 0.8 cm to about 3 cm. Dependent claim 7 of the copending Application claims a specific magnetic saturation of about 15 Gauss.cm3/grams or less.
Claim 9 of the copending Application claims a polycrystalline diamond compact, comprising: a substrate; and a polycrystalline diamond table including an interfacial surface bonded to the substrate and an upper exterior surface spaced from the interfacial surface; the polycrystalline diamond table including a plurality of diamond grains exhibiting an average diamond grains size of about 5 µm to about 50 µm, at least an unleached portion of the polycrystalline diamond table including: a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst present in the unleached portion of the polycrystalline diamond table in an amount of about 3 weight % to about 7.5 weight %; a coercivity of about 115 Oersteds ("Oe") to 250 Oe; a specific magnetic saturation of about 5 Gauss-cm³/grams ("G-cm³/g") to about 15 G-cm³/g; and a Gratio of at least about 4.0x10⁶.
Claim 15 of the copending Application claims a polycrystalline diamond compact, comprising: a polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface; the polycrystalline diamond table formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa and a temperature of at least 1000 °C, the polycrystalline diamond table exhibiting a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 5 µm to about 50 µm; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of 3 weight % to about 7.5 weight %; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds ("Oe") to 250 Oe; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 5 Gauss-cm³/grams ("G-cm³/g") to 15 G-cm³/g; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific permeability of about 0.1 G.cm³/g·Oe or less; and a substrate bonded to the interfacial surface of the polycrystalline diamond table.
The remaining claims of the copending Application recites limitations reading on or rendering the limitation of the dependent claims of the present Application under examination.
Conclusion
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/PEGAH PARVINI/Primary Examiner, Art Unit 1731