Prosecution Insights
Last updated: July 17, 2026
Application No. 18/683,994

ZINC CARBOXYLATE SALT FOR PRODUCTION OF SEMICONDUCTOR NANOPARTICLE

Non-Final OA §103§112
Filed
Feb 15, 2024
Priority
Aug 18, 2021 — JP 2021-133632 +1 more
Examiner
PARSA, JAFAR F
Art Unit
Tech Center
Assignee
NOF Corporation
OA Round
1 (Non-Final)
87%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 87% — above average
87%
Career Allowance Rate
1082 granted / 1241 resolved
+27.2% vs TC avg
Moderate +9% lift
Without
With
+8.9%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 11m
Avg Prosecution
19 currently pending
Career history
1258
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
63.5%
+23.5% vs TC avg
§102
6.7%
-33.3% vs TC avg
§112
1.8%
-38.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1241 resolved cases

Office Action

§103 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 Claim 4 is rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Regarding claim 4, the phrase "parenthetical expression" renders the claim indefinite because it is unclear whether the limitations following the phrase are part of the claimed invention. See MPEP § 2173.05(d). Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. Claims 1-4 are rejected under 35 U.S.C. 103 as being unpatentable over Xiong et al (Thin sold films 518 (2010) 4019-4023) in view of Hart et al (Journal Phys. Chem. B 2007, 111, 7073-7077). Applicants’ claimed invention is directed to a zinc carboxylate salt used for production of a semiconductor nanoparticle, wherein a ratio of carboxylic acids having 8 to 10 carbon atoms in whole of carboxylic acids that form the zinc carboxylate salt is 80.0% by mass or more, and an average branching degree of the whole of the carboxylic acids that form the zinc carboxylate salt is in a range of 1.1 to 2.9. Xiong teaches a non-aqueous solution method to synthesize zinc-based semiconductor thin films and nanoparticles. The reference instructs the practitioner to prepare a precursor solution by mixing 1 part by volume of 99.0% pure zinc neodecanoate ([CH3(CH2)5C(CH3)2COOH]2Zn) with 20 parts of 99.9% toluene. This compound possesses an inherently chemical topology with 2-3 methyl groups branching off the main alkyl chain. See experimental details and discussions. Xiong satisfies the structural foundation of the independent claim by deploying 99.0% pure source of zinc neodecanoate. Because neodecanoic acid is C10 carboxylic acid, a 99.0% pure salt inherently means that the ratio of C8-C10 carboxylic acids is 99.0% by mass, satisfying and exceeding the claimed ≥80% by mass requirement. However, Xiong is silent on explicitly calculating the term average branching degree (claims 1-3) and the dynamic fluid performance limit requiring the rate change in viscosity of 95% to 100% (claim 4). A person having ordinary skill in the art, prior to the effective filing date of the claimed invention seeking to replicate Xiong’s semiconductor deposition faces a routine engineering priority: maintaining strict control over precursor fluid dynamics to ensure film coating uniformity. Because fluid uniformity is a known result-effective variable dictated entirely by a compound’s underlying molecular architecture, a PHOSITA would look directly to established physical chemistry literature, such as Hart to map how batch-to-batch composition variations and branching configuration govern liquid zinc carboxylate flow integrity. See experimental details and discussions. Hart completely cures these analytical and rheological gaps by detailing the exact physical rules connecting zinc carboxylate molecular structures to their flow performance. Hart establishes that a liquid zinc carboxylate possessing 2-3 branching methyl groups on a C10 backbone-as explicitly taught by Xiong-mathematically yields an average branching degree sitting squarely within the claimed 1.1 to 2.9 threshold. Furthermore, the claimed parameter in claim 4 requiring a rate change in viscosity in the range of 95% to 100% translate mathematically to a strict stability constraint where the fluid’s viscosity must not deviate or change by more than 5% from its core baseline value during processing. See results and discussion. Hart explicitly verifies this exact performance constraint by testing 13 distinct liquid zinc carboxylate batches (samples A-M) synthesized under nearly identical conditions. Hart demonstrates that despite introducing ±2% to simulate raw material variables, the overall viscosity remains robustly flat, varying by a small margin of only about 6.0 Pa.s across the entire sample set. Because this 6.0 Pa.s total fluctuation sits entirely inside a ≤5% absolute change window relative to the baseline viscosity of these liquid systems, Hart’s experimental data proves that this tight, stable viscosity profile is an inherent physical hallmark of the highly branched liquid zinc carboxylate taught by Xiong. See results and discussion. The claimed invention represents nothing more than the optimization of a known result effective variable and the capture of an inherent property of existing prior art materials, rendering claims 1-4 unpatentable under 35 U.S.C. 103. Any inquiry concerning this communication or earlier communications from the examiner should be directed to JAFAR F PARSA whose telephone number is (571)272-0643. The examiner can normally be reached M-F 10:00 AM-6:30PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Scarlett Goon can be reached at 571-270-5241. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /JAFAR F PARSA/Primary Examiner, Art Unit 1692
Read full office action

Prosecution Timeline

Feb 15, 2024
Application Filed
Jul 09, 2026
Non-Final Rejection mailed — §103, §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
87%
Grant Probability
96%
With Interview (+8.9%)
1y 11m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1241 resolved cases by this examiner. Grant probability derived from career allowance rate.

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