Prosecution Insights
Last updated: April 19, 2026
Application No. 18/711,929

METHOD FOR PRODUCING BANDPASS FILTER, AND BANDPASS FILTER

Non-Final OA §102§103§112
Filed
May 21, 2024
Examiner
GLENN, KIMBERLY E
Art Unit
2843
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Hamamatsu Photonics K K
OA Round
1 (Non-Final)
90%
Grant Probability
Favorable
1-2
OA Rounds
2y 6m
To Grant
96%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allow Rate
949 granted / 1057 resolved
+21.8% vs TC avg
Moderate +6% lift
Without
With
+6.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
38 currently pending
Career history
1095
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
24.6%
-15.4% vs TC avg
§102
38.0%
-2.0% vs TC avg
§112
30.9%
-9.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1057 resolved cases

Office Action

§102 §103 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Priority Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55. Information Disclosure Statement The information disclosure statement (IDS) submitted on8/15/2025 was filed. The submission is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 4, 7-8 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. With regards to claim 7, applicant discloses that the thickness of the cavity layer is D, D=l/2 x m. Examiner is unclear what applicant is referring to with regards to “m” in the equation. In light of the above 112 rejection the claim are rejected as best understood my examiner . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of pre-AIA 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless –(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 7 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Nishida et al JPH0836109A (of record) . Nishida aet al discloses an bandpass filter comprising: a cavity 4a made of TiO2; and a laminated portion formed by alternately laminating a first dielectric film TiO2 4 made of a high refractive index material and a second dielectric film SiO2 made of a low refractive index material, wherein when a center wavelength of a transmission band is λ and a film thickness of the cavity layer is D, D=λ/2×m (m is an integer of 3 or more), (The film thickness d3 is set to λ1 / 2n 1 . The TiO 2 cavity layer 4a is a layer that satisfies the resonance condition for obtaining high transmittance.) and a transmittance in the transmission band is 80% or more. (As shown in FIG. 5, the transmittance at a wavelength of 830 nm is 0.957. 1 / maximum transmittance The full width at half maximum of the transmission band having the transmittance of 2 is about 5 nm, and the resolution is high. The transmission characteristics when the angle (incident angle) formed by the normal A of the incident surface of the dielectric multilayer film bandpass filter 1 and the optical axis B of the incident light is 30 ° are also shown by a broken line. The maximum transmittance at an incident angle of 30 ° is 0.864 at a wavelength of 799 nm.) (paragraph [0032]) Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 1 and 4-6 is/are rejected under 35 U.S.C. 103 as being unpatentable over Nishida et al JPH0836109A in view of Yasuhide et al JP2002286937 A ( both of record). Nishida et al discloses a bandpass filter comprising: a cavity 4a made of TiO2; and a laminated portion formed by alternately laminating a first dielectric film TiO2 4 made of a high refractive index material and a second dielectric film SiO2 made of a low refractive index material. ( Figure 4 is a sectional view showing the structure of the dielectric multilayer film bandpass filter 1. The dielectric multilayer film band pass filter 1 is formed by alternately stacking high refractive index material layers and low refractive index material layers. In the example of FIG. 4, the TiO 2 film 4 is used as the high refractive index material layer, the SiO 2 film 5 is used as the low refractive index material layer, and the TiO 2 film 4 and the SiO 2 film 5 are provided on the translucent glass substrate 6.paragraph [0029]) The method steps to the above apparatus are inherent. With regards to claim 4, a center wavelength of a transmission band is λ and a film thickness of the cavity layer is D, D=λ/2×m (m is an integer of 3 or more), (The film thickness d3 is set to λ1 / 2n 1 . The TiO 2 cavity layer 4a is a layer that satisfies the resonance condition for obtaining high transmittance. Paragraph [0030]) With regards to claim 5, the λ is 400 nm or more and 1000 nm or less. (Therefore, for example, the central wavelength λ1 of the transmission band is 830 nm. Paragraph [0031]) Thus, Nishida et al is shown to teach all the limitation of the claim with the exception of during the film formation of bandpass filter , a film formation stop period to lower a temperature of a film formation substrate by temporarily stopping film formation during the film formation is set. Yasuhide et al disclose a method and apparatus for forming dielectric film on end dace of optical fiber. Yasuhide et al states, in alternately forming the high-refractive material film and the low-refractive material film, these films are formed not intermittently but intermittently. The case where the temperature change in the vacuum chamber is suppressed within a certain range is also included in the method of forming a dielectric film on the end face of the optical fiber of the present invention. For example, when forming a dielectric film in which four layers of high-refractive material films and low-refractive material films are alternately laminated on the end face of a fiber, the first layer and the first layer are preheated to 70 ° C. or 75 ° C. in the vacuum chamber. A second layer is formed. afterwards, After the film formation is temporarily stopped and the temperature in the raised vacuum chamber (per claim 6) is lowered to 70 ° C. or 75 ° C., the film formation of the third and fourth layers is started. The reflectivity of the dielectric film thus formed is 0.003% against the design value of 0.001%. (paragraph [0022]) It would have been obvious to one of ordinary skill in the art to have a film formation stop period to lower a temperature of a film formation substrate by temporarily stopping film formation during the film formation is set. The motivation for this modification would have been to provide a method for forming a dielectric film, in which a change in the ambient temperature is reduced as much as possible, and a dielectric film having desired optical characteristics can be formed. (paragraphs [0006 -0007] Allowable Subject Matter Claims 2 and 3 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Any inquiry concerning this communication or earlier communications from the examiner should be directed to KIMBERLY E GLENN whose telephone number is (571)272-1761. The examiner can normally be reached M-F 8:00 AM-5:00 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Andrea Lindgren Baltzell can be reached at 571-272-5918. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. September 27, 2025 /K.E.G/Examiner, Art Unit 2843 /ANDREA LINDGREN BALTZELL/Supervisory Patent Examiner, Art Unit 2843
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Prosecution Timeline

May 21, 2024
Application Filed
Sep 27, 2025
Non-Final Rejection — §102, §103, §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
90%
Grant Probability
96%
With Interview (+6.4%)
2y 6m
Median Time to Grant
Low
PTA Risk
Based on 1057 resolved cases by this examiner. Grant probability derived from career allow rate.

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