Prosecution Insights
Last updated: August 06, 2026
Application No. 18/731,226

MANUFACTURING PROCESS FOR THIN SILICON OXIDE LAYER

Non-Final OA §103
Filed
May 31, 2024
Priority
Feb 02, 2024 — CN 202410151393.X
Examiner
FLETCHER III, WILLIAM P
Art Unit
Tech Center
Assignee
Singapore Ebang Pte. Ltd.
OA Round
1 (Non-Final)
76%
Grant Probability
Favorable
1-2
OA Rounds
9m
Est. Remaining
92%
With Interview

Examiner Intelligence

Grants 76% — above average
76%
Career Allowance Rate
856 granted / 1125 resolved
+16.1% vs TC avg
Strong +16% interview lift
Without
With
+16.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
37 currently pending
Career history
1146
Total Applications
across all art units

Statute-Specific Performance

§101
0.7%
-39.3% vs TC avg
§103
43.3%
+3.3% vs TC avg
§102
15.3%
-24.7% vs TC avg
§112
33.1%
-6.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1125 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Specification The disclosure is objected to because of the following informalities: In the first line of the Abstract, “photovoltaic” should read - - photovoltaics - -. Appropriate correction is required. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. Claim(s) 1 and 2 is/are rejected under 35 U.S.C. 103 as being unpatentable over Dasgupta et al., Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation, IEEE Journal of Photovoltaics, Vol. 12, No. 6, Nov. 2022, 1282-1288; in view of CN 101771102 A. Dasgupta teaches a process for patterning a poly-Si layer on a TOPCon solar cell to form an estimated 1-4 nm thick stoichiometric SiO-2 layer by patterning the poly-Si layer using a nanosecond UV (355 nm) laser with a power ≥ 3 W at a 400 mm/s scan speed [abstract]. Dasgupta does not explicitly state that the TOPCon solar cell is placed on a workbench prior to laser patterning. CN 102 teaches a process for laser etching (i.e., patterning) of an Si layer on a photovoltaic panel substrate in which the substrate is placed on a worktable (i.e., a workbench) in order to adjust the flatness (i.e., levelness) thereof [0009, 0011]. It would have been obvious to one of ordinary skill in the art, before the effective filing date of the claimed invention, to modify the process of Dasgupta so as to place the TOPCon solar cell substrate on any known substrate holder prior to laser patterning thereof. One of ordinary skill in the art would have been motivated to do so by the desire and expectation of advantageously holding the TOPCon solar cell in a flat, level configuration for the laser patterning. See MPEP §§ 2143(I)(A) and 2144(II). Allowable Subject Matter Claims 3-10 objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: US 2003/0226834 A1, for example, teaches an apparatus for laser processing a flat, thin film substrate (150), on workbench (152) is horizontally disposed on rack (156) [Fig. 1]. Laser emission unit (162) is mounted on the rack (156) and located above the workbench (152) [id.]. The laser emission contains a plurality of laser emitters (166). Neither US 834 in particular, nor the prior art in general, teaches or suggests the claimed process wherein the laser emission unit comprises: a mounting plate; two longitudinally disposed mounting bars mounted on a lower surface of the mounting plate; a feed mechanism for driving the mounting plate to move horizontally; and a driving mechanism for driving the two mounting bars to reciprocate longitudinally. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. CN 1715931 A1 teaches an apparatus for UV laser-treating a substrate that is mounted on a worktable. CN 931 teaches driving the workbench using stepping motors. The following references are representative of the state of the prior art: Shukla et al., Investigations on effect of laser-induced self-assembled patterning on optical properties of flexible polyimide substrates for solar cell applications, J. Phys. D: Appl. Phys, 51 (2018) 045502-045514. Wilkes et al., Laser Crystallization and Dopant Activation for a-Si:H Film in Carrier-Selective Contacts for Silicon Solar cells, Proc. IEEE 46th Photovolt. Specialists Conf., 2019, 2709-2712. Wilkes et al., Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells, IEEE Journal of Photovoltaics, Vol. 10, No. 5, Sep. 2020, 1283-1289. Any inquiry concerning this communication or earlier communications from the examiner should be directed to WILLIAM P FLETCHER III whose telephone number is (571)272-1419. The examiner can normally be reached Monday-Friday, 9 AM - 5 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Curtis Mayes can be reached at (571) 272-1234. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. WILLIAM PHILLIP FLETCHER III Primary Examiner Art Unit 1759 /WILLIAM P FLETCHER III/Primary Examiner, Art Unit 1759 23 July 2026
Read full office action

Prosecution Timeline

May 31, 2024
Application Filed
Jul 24, 2026
Non-Final Rejection mailed — §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
76%
Grant Probability
92%
With Interview (+16.4%)
2y 11m (~9m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1125 resolved cases by this examiner. Grant probability derived from career allowance rate.

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