DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Priority
Acknowledgment is made of applicant’s claim for domestic benefit from provisional application 63/055483 and application 17384135.
Information Disclosure Statement
The information disclosure statements (IDS) submitted on July 1, 2024 and July 8, 2025 were filed in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement has been considered by the examiner.
Claim Rejections - 35 USC § 103
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or nonobviousness.
Claims 23-28, 30-32, 37-41 are rejected as being unpatentable over 35 U.S.C. 103 over Honda US 20180076595 in view of Cheng et al. WO 2020140286 , Matsuda et al. US 20040091009, and TOHYAMA, Masaki et al. Mechanism of Tuning and Frequency Modulation in Three-Electrode DFB Lasers. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 1, No. 2, June 1995.
Regarding Claim 23, Honda teaches A semiconductor laser, comprising:
a stack of semiconducting layers (Fig. 5, 60) and having a longitudinal light propagation direction (Paragraph 0050 “The modulated and amplified laser light may be output through the coating film 46 provided on the facets in the side of the amplifying region 63.”);
a plurality of electrodes (Fig. 5, 24, 25,26) each coupled to a corresponding section of the laser device (24 is coupled to section 61 a.k.a. gain region 25 is coupled to section 62 a.k.a. modulating region 26 is coupled to 63 a.k.a. amplifying region) along the longitudinal light propagation direction (Fig. 5 61, 62 and 63, are each set next to each other along the longitudinal light propagation direction) each corresponding section defining one of an amplification section (Fig. 5, 63) or a modulation section (Fig. 5, 62);
one or more DC sources each coupled to the electrodes associated with said amplification sections (Paragraph 0029 “. The electrode 26 on the SOA 21 is connected with a DC terminal 29 through bonding wires and a capacitor 28.”) and operable to forward-bias above transparency so as to provide gain in the associated amplification sections (Paragraph 0028“The SOA 21 amplifies the laser light output from the EML 20 and provides thus amplified laser light to the external fiber.”); and
one or more modulation signal sources each coupled to the electrodes associated with said modulation sections and operable to apply a modulation signal across below transparency (Paragraph 0036 “The laser light 41 propagates within the absorbing layer 42 in the modulating region 62 and modulated in the magnitude thereof by the modulating signal supplied to the electrode 25.”), the modulation signal providing a modulation (Paragraph 0032 “the modulating region 62 that modulates the laser light,”)
wherein each modulation section is operated and remains below transparency, such that each modulation section does not contribute photons within the semiconductor laser. (Paragraph 0032 “The gain region 61 includes an active layer 41 that generates the laser light, while, the modulating region 62 provides an absorbing layer 42 that is optically coupled with the active layer 51 in the gain region 61.”)
Honda does not teach the each of the sections listed above are in the cavity, laser is a single mode laser cavity, the modulation is for an output optical frequency of the semiconductor laser and defining a transversal p-n junction.
However,
Cheng teaches a single mode laser (Page 6 of translation “The Bragg grating included in the grating layer 13 of the laser zone is used to select a single longitudinal mode optical signal, and transmits the selected single longitudinal mode optical signal through the active layer of the laser zone.”)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor laser as taught by Honda by having it be a single mode laser as disclosed by Cheng. One of ordinary skill in the art would have been motivated to make this modification in order to allow increases to transmission distance of optical signals. (Cheng Page 6 of translation)
Honda in view of Cheng does not teach each of the sections listed above are in the cavity, the modulation is for an output optical frequency of the semiconductor laser and defining a transversal p-n junction
However,
Matsuda teaches a laser with a the amplifying section (Fig. 8, 22) and the modulator section (Fig. 8, 23) within the laser cavity.
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor laser as taught by Honda by moving the modulation and amplification section into the laser cavity as disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order to allow the laser to be in a bistable state. (Matsuda Paragraph 0064)
Matsuda also teaches defining a transversal p-n junction (Fig. 1, Top electrode is p-electrode and bottom electrode is n- electrode, 7 is a p-type upper cladding and 8 is a lower n-type cladding paragraph 0109) and
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor laser as taught by Honda by adding the defined transversal p-n junction disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order to allow inject current into the laser. (Paragraph 0109)
Honda in view of Cheng and Matsuda does not teach the modulation is for an output optical frequency of the semiconductor laser.
Tohyama teaches the modulation is for an output optical frequency of the semiconductor laser. (Pg. 416, Col. 2, Lines 6-8)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the modulator section as taught by Honda having the modulation section modulate frequency as disclosed by Tohyama. One of ordinary skill in the art would have been motivated to make this modification in order to create a bandwidth of frequencies that are desirable for specific purposes. (Pg. 424, Col. 2, Paragraph 2 in the Conclusion section)
Regarding Claim 24, Honda as modified teaches the single mode laser cavity comprises a substrate supporting the stack of semiconductor layers (Fig. 5, 40), and the stack of semiconductor layers comprises, along a first direction transversal to the light propagation direction: and one of more contiguous active layers extending between the p-doped layers and the n-doped layers (Fig. 5 41, 42, 47).
Honda does not teach one or more contiguous p-doped layers; one of more contiguous n-doped layers.
However,
Matsuda teaches one or more contiguous p-doped layers; one of more contiguous n-doped layers; (Fig. 1, 7 is a p-type upper cladding and 8 is a lower n-type cladding paragraph 0109)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the stack of semiconductor layers as taught by Honda by adding p-doped layers and n-layers disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order to allow current to flow through the laser.
Regarding Claim 25, Honda as modified teaches the stack of semiconducting layers has an index of refraction profile along the first direction configured to provide guiding for an optical mode with a maximum optical intensity close to the active layers. (Paragraph 0033-0034.)
Regarding Claim 26, Honda does not teach the single mode laser cavity comprises a confinement structure in a second direction perpendicular to the first direction and to the light propagation direction, the confinement structure being configured to confine light and current along the second direction.
However,
Matsuda teaches the single mode laser cavity comprises a confinement structure in a second direction perpendicular to the first direction and to the light propagation direction, the confinement structure being configured to confine light and current along the second direction. (Matsuda Fig. 12, 126 & 127, Paragraphs 0019-0021)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor laser as taught by Honda by adding a confinement heterostructure layer disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order to allow the light to travel in the desired direction. (Matsuda Paragraph 0019-0020)
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Regarding Claim 27, Honda teaches the single mode laser cavity further comprises a reflective structure configured to provide optical feedback along the light propagation direction. (Fig. 5, 44)
Regarding Claim 28, Honda teaches the reflective structure is arranged in one of a distributed feedback configuration and a distributed Bragg reflector configuration. ( Paragraph 0033 “Provided inside of substrate 40 is iterating structures 44 each having gratings, where the gratings may determine the wavelength of laser light generated in the active layer 41. Thus the gain region 61 may operate as a distributed feedback (DFB) laser diode.”)
Regarding Claim 30, Honda teaches wherein the one or more DC sources comprises at least one DC current source configured to inject a DC current across the p-n junction in the amplification sections. (Paragraph 0035 “The gain region 61 provides the electrode 24 on the upper cladding layer 43, to which the driving current ILD, which may be a DC current,)
Regarding Claim 31, Honda does not teach the one or more modulation sources comprise at least one AC current source configured to inject a modulated current across the p-n junction in the modulation sections.
However,
Matsuda teaches the one or more modulation sources comprise at least one AC current source configured to inject a modulated current across the p-n junction in the modulation sections. (Paragraph 0032)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the modulation voltage source as taught by Honda by adding an AC current source as disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order change the amount of light is absorbed. (Paragraph 0043)
Regarding Claim 32, Honda does not teach the one or more modulation sources comprise at least one AC voltage source applying a modulated voltage across the p-n junction in the modulation sections.
However,
Matsuda teaches the one or more modulation sources comprise at least one AC voltage source applying a modulated voltage across the p-n junction in the modulation sections. (Paragraph 0032)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the modulation voltage source as taught by Honda by adding an AC voltage source as disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order change the amount of light is absorbed. (Paragraph 0043)
Regarding Claim 37, Honda teaches A frequency-modulated continuous wave semiconductor laser, comprising:
a stack of semiconducting layers (Fig. 5, 60) and having a longitudinal light propagation direction (Paragraph 0050 “The modulated and amplified laser light may be output through the coating film 46 provided on the facets in the side of the amplifying region 63.”);
a plurality of electrodes (Fig. 5, 24, 25,26) each coupled to a corresponding section of the laser device (24 is coupled to section 61 a.k.a. gain region 25 is coupled to section 62 a.k.a. modulating region 26 is coupled to 63 a.k.a. amplifying region) along the longitudinal light propagation direction (Fig. 5 61, 62 and 63, are each set next to each other along the longitudinal light propagation direction) each corresponding section defining one of an amplification section (Fig. 5, 63) or a modulation section (Fig. 5, 62);
one or more DC sources each coupled to the electrodes associated with said amplification sections (Paragraph 0029 “. The electrode 26 on the SOA 21 is connected with a DC terminal 29 through bonding wires and a capacitor 28.”) and operable to forward-bias above transparency so as to provide gain in the associated amplification sections (Paragraph 0028“The SOA 21 amplifies the laser light output from the EML 20 and provides thus amplified laser light to the external fiber.”); and
one or more modulation signal sources each coupled to the electrodes associated with said modulation sections and operable to apply a modulation signal across below transparency (Paragraph 0036 “The laser light 41 propagates within the absorbing layer 42 in the modulating region 62 and modulated in the magnitude thereof by the modulating signal supplied to the electrode 25.”), the modulation signal providing a modulation (Paragraph 0032 “the modulating region 62 that modulates the laser light,”)
wherein each modulation section is operated and remains below transparency, such that each modulation section does not contribute photons within the semiconductor laser. (Paragraph 0032 “The gain region 61 includes an active layer 41 that generates the laser light, while, the modulating region 62 provides an absorbing layer 42 that is optically coupled with the active layer 51 in the gain region 61.”)
Honda does not teach the each of the sections listed above are in the cavity, laser is a single mode laser cavity, the modulation is for an output optical frequency of the semiconductor laser and defining a transversal p-n junction.
However,
Cheng teaches a single mode laser (Page 6 of translation “The Bragg grating included in the grating layer 13 of the laser zone is used to select a single longitudinal mode optical signal, and transmits the selected single longitudinal mode optical signal through the active layer of the laser zone.”)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor laser as taught by Honda by having it be a single mode laser as disclosed by Cheng. One of ordinary skill in the art would have been motivated to make this modification in order to allow increases to transmission distance of optical signals. (Cheng Page 6 of translation)
Honda in view of Cheng does not teach each of the sections listed above are in the cavity, the modulation is for an output optical frequency of the semiconductor laser and defining a transversal p-n junction
However,
Matsuda teaches a laser with a the amplifying section (Fig. 8, 22) and the modulator section (Fig. 8, 23) within the laser cavity.
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor laser as taught by Honda by moving the modulation and amplification section into the laser cavity as disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order to allow the laser to be in a bistable state. (Matsuda Paragraph 0064)
Matsuda also teaches defining a transversal p-n junction (Fig. 1, Top electrode is p-electrode and bottom electrode is n- electrode, 7 is a p-type upper cladding and 8 is a lower n-type cladding paragraph 0109) and
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the semiconductor laser as taught by Honda by adding the defined transversal p-n junction disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order to allow inject current into the laser. (Paragraph 0109)
Honda in view of Cheng and Matsuda does not teach the modulation is for an output optical frequency of the semiconductor laser.
Tohyama teaches the modulation is for an output optical frequency of the semiconductor laser. (Pg. 416, Col. 2, Lines 6-8)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the modulator section as taught by Honda having the modulation section modulate frequency as disclosed by Tohyama. One of ordinary skill in the art would have been motivated to make this modification in order to create a bandwidth of frequencies that are desirable for specific purposes. (Pg. 424, Col. 2, Paragraph 2 in the Conclusion section)
Regarding Claim 38, Honda as modified teaches the single mode laser cavity comprises a substrate supporting the stack of semiconductor layers (Fig. 5, 40), and the stack of semiconductor layers comprises, along a first direction transversal to the light propagation direction: and one of more contiguous active layers extending between the p-doped layers and the n-doped layers (Fig. 5 41, 42, 47).
Honda does not teach one or more contiguous p-doped layers; one of more contiguous n-doped layers.
However,
Matsuda teaches one or more contiguous p-doped layers; one of more contiguous n-doped layers; (Fig. 1, 7 is a p-type upper cladding and 8 is a lower n-type cladding paragraph 0109)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the stack of semiconductor layers as taught by Honda by adding p-doped layers and n-layers disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order to allow current to flow through the laser.
Regarding Claim 39, Honda teaches wherein the one or more DC sources comprises at least one DC current source configured to inject a DC current across the p-n junction in the amplification sections. (Paragraph 0035 “The gain region 61 provides the electrode 24 on the upper cladding layer 43, to which the driving current ILD, which may be a DC current,)
Regarding Claim 40, Honda does not teach the one or more modulation sources comprise at least one AC current source configured to inject a modulated current across the p-n junction in the modulation sections.
However,
Matsuda teaches the one or more modulation sources comprise at least one AC current source configured to inject a modulated current across the p-n junction in the modulation sections. (Paragraph 0032)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the modulation voltage source as taught by Honda by adding an AC current source as disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order change the amount of light is absorbed. (Paragraph 0043)
Regarding Claim 41, Honda does not teach the one or more modulation sources comprise at least one AC voltage source applying a modulated voltage across the p-n junction in the modulation sections.
However,
Matsuda teaches the one or more modulation sources comprise at least one AC voltage source applying a modulated voltage across the p-n junction in the modulation sections. (Paragraph 0032)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the modulation voltage source as taught by Honda by adding an AC voltage source as disclosed by Matsuda. One of ordinary skill in the art would have been motivated to make this modification in order change the amount of light is absorbed. (Paragraph 0043)
Claim 29 is rejected as being unpatentable over 35 U.S.C. 103 over Honda, Matsuda, and Tohyama in view of OKAI, M. et al. Corrugation-Pitch-Modulated Phase-Shifted DFB Laser. IEEE Photonics Technology Letters, Vol. 1, No. 8, August 1989 (herein after referred to as Okai).
Regarding Claim 29, Honda teaches the reflective structure comprises a distributed Bragg grating comprising a plurality of periodic corrugations along the light propagation direction. (Fig. 5, 44)
Honda in view of Matsuda and Tohyama does not teach the distributed Bragg grating comprises a π phase shift and the periodic corrugations having a period that varies along the light propagation direction.
However,
Okai teaches the distributed Bragg grating comprises a π phase shift. (Pg. 200, Col. 1, Paragraph 2) and the periodic corrugations have a period that varies along the light propagation direction. (See annotated Fig. 1 below)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the Bragg grating as taught by Honda by adding a π phase shift disclosed by Okai. One of ordinary skill in the art would have been motivated to make this modification in order to reduce the spatial hole burning effect along the laser cavity. (Abstract)
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Claims 33, 35, 36, 42 are rejected as being unpatentable over 35 U.S.C. 103 over Honda, Matsuda, and Tohyama in view of Blauvelt et al. US 20160006509.
Regarding Claim 33, Honda in combination with Matsuda and Tohyama does not teach in association with each modulation section, a photovoltaic mode element connected to the corresponding electrode.
However,
Blauvelt teaches in association with each modulation section, a photovoltaic mode element connected to the corresponding electrode. (Fig. 3, 111)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the modulation section as taught by Honda by adding a photovoltaic mode element disclosed by Blauvelt. One of ordinary skill in the art would have been motivated to make this modification in order to create a current sink. (Claim 4).
Regarding Claim 35, Honda in combination with Matsuda and Tohyama does not teach the photovoltaic mode element comprises a DC voltage source.
However,
Blauvelt teaches the photovoltaic mode element comprises a DC voltage source. (Paragraph 0048)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the photovoltaic mode element as taught by Honda by adding a DC voltage source disclosed by Blauvelt. One of ordinary skill in the art would have been motivated to make this modification in order to allow the light to be optically modulated. (Paragraph 0048)
Regarding Claim 36, Honda in combination with Matsuda and Tohyama does not teach the photovoltaic mode element comprises a DC current source.
However,
Blauvelt teaches the photovoltaic mode element comprises a DC current source. (Paragraph 0048)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the photovoltaic mode element as taught by Honda by adding a DC current source disclosed by Blauvelt. One of ordinary skill in the art would have been motivated to make this modification in order to allow the light to be optically modulated. (Paragraph 0048)
Regarding Claim 42, Honda in combination with Matsuda and Tohyama does not teach in association with each modulation section, a photovoltaic mode element connected to the corresponding electrode, the photovoltaic mode element comprises a DC voltage source and a DC current source.
However,
Blauvelt teaches in association with each modulation section, a photovoltaic mode element connected to the corresponding electrode. (Fig. 3, 111) the photovoltaic mode element comprises a DC voltage source. (Paragraph 0048) and a DC current source. (Paragraph 0048)
It would have been obvious for one of ordinary skill in the art before the effective filing date of the claimed invention to have modified the modulation section as taught by Honda by adding a photovoltaic mode element disclosed by Blauvelt. One of ordinary skill in the art would have been motivated to make this modification in order to create a current sink. (Claim 4).
Allowable Subject Matter
Claims 34 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
Regarding Claim 34, Honda does not teach the photovoltaic mode element comprises a load resistor having an adjustable resistance value and an electronic circuit configured to measure a voltage and a current across the load resistor and to produce a signal to adjust the resistance value of the load resistor.
Conclusion
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/STEPHEN SUTTON KOTTER/Examiner, Art Unit 2828
/MINSUN O HARVEY/Supervisory Patent Examiner, Art Unit 2828