Prosecution Insights
Last updated: October 04, 2026
Application No. 18/767,265

SEMICONDUCTOR DEVICE

Non-Final OA §102§Other
Filed
Jul 09, 2024
Priority
Jul 10, 2023 — JP 2023-112739
Examiner
TECHANE, MUNA A
Art Unit
Tech Center
Assignee
Renesas Electronics Corporation
OA Round
1 (Non-Final)
94%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 94% — above average
94%
Career Allowance Rate
533 granted / 570 resolved
+33.5% vs TC avg
Moderate +7% lift
Without
With
+6.6%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 9m
Avg Prosecution
14 currently pending
Career history
574
Total Applications
across all art units

Statute-Specific Performance

§101
2.7%
-37.3% vs TC avg
§103
27.3%
-12.7% vs TC avg
§102
31.7%
-8.3% vs TC avg
§112
19.5%
-20.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 570 resolved cases

Office Action

§102 §Other
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Drawings The drawings received on 07/09/2024 have been accepted by the examiner. Priority Receipt is acknowledged of papers submitted under 35 U.S.C. 119(a)-(d), which papers have been placed of record in the file. Information Disclosure Statement Acknowledgment is made of applicant's Information Disclosure Statement (IDS) Form PTO-1449, filed 07/09/2024. The information disclosed therein was considered. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-2 is/are rejected under 35 U.S.C. 102a(1) as being anticipated by Hayashi et al (US20110310515). Regrading claim 1, Hayashi discloses a semiconductor device comprising(FIG 1; 4): a first power supply wiring configured to supply a first power supply voltage(Vdd1); a second power supply wiring configured to supply a second power supply voltage(Vdd2); a first ground wiring configured to supply a first ground voltage(Vss1); a second ground wiring configured to supply a second ground voltage(Vss2); an I/O cell connected between the first power supply wiring and the first ground wiring (FIG 4;I/O 41 between Vdd1 and Vss1) ; a core logic circuit connected between the second power supply wiring and the second ground wiring(12 is between Vdd2 and Vss2); a first power supply cell and a second power supply cell connected between the first power supply wiring and the first ground wiring(41 & 42 between Vdd1 and Vss1); and a third power supply cell and the fourth power supply cell connected between the second power supply wiring and the second ground wiring(51 & 55 between Vdd2 and Vss2), wherein each of the first, second, third and fourth power supply cell includes: a protection circuit connected between the corresponding power supply wiring and the corresponding ground wiring(EsDdd12, ESDdd23, ESDss14 & ESDss12 connected between corresponding power supply wiring and ground wiring); and a bi-directional diode connected between the first ground wiring and the second ground wiring (ESDss12 comprising bi-direction diode connected between Vss1 and Vss2). Regrading claim 2, Hayashi discloses wherein each bi-directional diode of the first and second power supply cell is disposed between the core logic circuit and the protection circuit therein in a plan view(FIG 4; ESDdd12 comprising bi-direction diode is between 11 and 41), and wherein each bi-directional diode of the third and fourth power supply cell is disposed at a chip side so that the protection circuit is disposed between the core logic circuit and the bi-directional diode in the plan view(FIG 4; same applied e.g., EsDss12 in between of 12 and 41 and so on). Allowable Subject Matter Claims 3-6 are objected to as being dependent upon a rejected base claim but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure: Yamanishi et al (US20110074438 FIG 1B; [0010]; discloses bi-direction diodes connected to transistors, power supply line, and a ground line). Ikeda et al (US2006007760 FIG 9; discloses first power supply, first ground supply, circuit block 90 connected between first power supply and first ground supply, transistor, one directions diode 90a and 90b, wherein the diodes are connected to the transistors PMOS and NMOS connected to the second set diodes that are connected to circuit blocks 91, and wherein 91 is connected between a second power supply Vdd2 and second ground supply Vss2). Any inquiry concerning this communication or earlier communications from the examiner should be directed to MUNA A TECHANE whose telephone number is (571)272-7856. The examiner can normally be reached 571-272-7856. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Amir Zarabian can be reached at 571-272-1852. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /MUNA A TECHANE/Primary Examiner, Art Unit 2827
Read full office action

Prosecution Timeline

Jul 09, 2024
Application Filed
Sep 21, 2026
Non-Final Rejection mailed — §102, §Other (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12749547
HIGH-DENSITY & HIGH-VOLTAGE-TOLERABLE PURE CORE MEMORY CELL
2y 2m to grant Granted Sep 29, 2026
Patent 12749523
APPARATUSES AND METHODS FOR ACCESS BASED TARGETED REFRESH OPERATIONS
2y 0m to grant Granted Sep 29, 2026
Patent 12749525
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
1y 8m to grant Granted Sep 29, 2026
Patent 12738325
SEQUENTIAL ERASE FOR TUNING THE PROGRAM STATE OF NON-VOLATILE MEMORY CELLS
2y 3m to grant Granted Sep 15, 2026
Patent 12738316
NONVOLATILE MEMORY
1y 11m to grant Granted Sep 15, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
94%
Grant Probability
99%
With Interview (+6.6%)
1y 9m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 570 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month