Prosecution Insights
Last updated: April 19, 2026
Application No. 18/778,475

SEMICONDUCTOR MEMORY DEVICES

Non-Final OA §DP
Filed
Jul 19, 2024
Examiner
AHMED, ENAM
Art Unit
2112
Tech Center
2100 — Computer Architecture & Software
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
82%
Grant Probability
Favorable
1-2
OA Rounds
3y 4m
To Grant
99%
With Interview

Examiner Intelligence

Grants 82% — above average
82%
Career Allow Rate
596 granted / 727 resolved
+27.0% vs TC avg
Strong +20% interview lift
Without
With
+20.0%
Interview Lift
resolved cases with interview
Typical timeline
3y 4m
Avg Prosecution
8 currently pending
Career history
735
Total Applications
across all art units

Statute-Specific Performance

§101
8.3%
-31.7% vs TC avg
§103
59.7%
+19.7% vs TC avg
§102
20.2%
-19.8% vs TC avg
§112
1.9%
-38.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 727 resolved cases

Office Action

§DP
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Non-Statutory Double Patenting The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/process/file/efs/guidance/eTD-info-I.jsp. The independent claim 1 from U.S. Application 18/778,475 is compared with independent claim 1 of U.S. Patent No. 12,066,893which is shown below. U.S. Application 18/778,475 U.S. Patent No. 12,066,893 a memory cell array including a plurality of volatile memory cells coupled to a plurality of word-lines and a plurality of bit-lines a memory cell array including a plurality of volatile memory cells coupled to a plurality of word-lines and a plurality of bit-lines a link error correction code (ECC) engine configured to: receive a first codeword received from a memory controller, wherein the first codeword includes main data and a first parity data a link error correction code (ECC) engine configured to: receive a first codeword received from a memory controller, wherein the first codeword includes main data and a first parity data and perform a first ECC decoding on the first codeword to generate the main data from the first codeword and perform a first ECC decoding on the first codeword to generate the main data from the first codeword a link error correction code (ECC) engine configured to: receive a first codeword received from a memory controller, wherein the first codeword includes main data and a first parity data and perform a first ECC decoding on the first codeword to generate the main data from the first codeword and an on-die ECC engine configured to: receive the main data from the link ECC engine and generate a second codeword including the main data and the second parity data perform a first ECC encoding on the main data received from the link ECC engine to generate a second parity data; and generate a second codeword including the main data and the second parity data and generate a second codeword including the main data and the second parity data wherein the on-die ECC engine, in response to a result of the first ECC decoding indicating that the first codeword includes a first type of uncorrectable errors wherein the on-die ECC engine, in response to a result of the first ECC decoding indicating that the first codeword includes a first type of uncorrectable errors generates a third codeword by applying a first type of error pattern to the second codeword, the first type of error pattern being associated with the first type of uncorrectable errors generates a third codeword by changing at least one of bits of the second codeword based on a first type of error pattern associated with the first type of uncorrectable errors and provides the third codeword to a first target page of the memory cell array and provides the third codeword to a first target page of the memory cell array and wherein the first type of uncorrectable errors occurs during a data transmission between the memory controller and the semiconductor memory device wherein the first type of uncorrectable errors occurs during a data transmission between the memory controller and the semiconductor memory device. Claim 1 of U.S. Application 18/778,475 is rejected on the ground of nonstatutory obviousness-type double patenting as being unpatentable over claim 1 of U.S. Patent No. 12,066,893. Although, the conflicting claims are not identical, they are not patentably distinct from each other because claim 1 of U.S. Application 18/778,475 discloses all of the elements of the independent claim 1 of U.S. Patent No. 12,066,893, except explicitly stating and an on-die ECC engine configured to: receive the main data from the link ECC engine and perform a first ECC encoding on the main data received from the link ECC engine to generate a second parity data. However, these limitations are obvious or can be configured, as claim 1 of U.S. Application 18/778,475 already states a link error correction code (ECC) engine configured to: receive a first codeword received from a memory controller, wherein the first codeword includes main data and a first parity data; and perform a first ECC decoding on the first codeword to generate the main data from the first codeword; and generate a second codeword including the main data and the second parity data. Thus, the limitations are obvious variations of one another and can be done. Thus, it would have been obvious at a time prior to the effective filing date of Applicant’s claimed invention to have modified the teachings of claim 1 of U.S. Application 18/778,475 to include and an on-die ECC engine configured to: receive the main data from the link ECC engine and perform a first ECC encoding on the main data received from the link ECC engine to generate a second parity data is for improved performance. Dependent claims 2-13, 15-16 and 18-20 of U.S. Application 18/778,475 are also rejected on the ground of nonstatutory obviousness-type double patenting over claims 1-11 and 18-20 of U.S. Patent No. 12,066,893 for having obvious variations. Independent claim 14 and 17 of U.S. Application 18/778,475 is also rejected on the ground of nonstatutory obviousness-type double patenting over claim 18 of U.S Patent No. 12,066,893. The same or similar reasoning is given as provided above for claim 1. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to Enam Ahmed whose telephone number is 571-270-1729. The examiner can normally be reached on Mon-Fri from 8:30 A.M. to 5:30 P.M. If attempts to reach the examiner by telephone are unsuccessful, the examiner's supervisor, Albert Decady, can be reached on 571-272-3819. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). EA 11/28/25 /ALBERT DECADY/Supervisory Patent Examiner, Art Unit 2112
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Prosecution Timeline

Jul 19, 2024
Application Filed
Nov 28, 2025
Non-Final Rejection — §DP (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12596611
MEMORY SYSTEM AND MEMORY MANAGEMENT METHOD THEREOF
2y 5m to grant Granted Apr 07, 2026
Patent 12562756
RATE MATCHING METHODS FOR LDPC CODES
2y 5m to grant Granted Feb 24, 2026
Patent 12554434
INPUT VOLTAGE DEGRADATION DETECTION
2y 5m to grant Granted Feb 17, 2026
Patent 12554576
ERROR CORRECTION CODE ENGINE OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE
2y 5m to grant Granted Feb 17, 2026
Patent 12547487
ELECTRONIC SYSTEM AND METHOD OF MANAGING ERRORS OF THE SAME
2y 5m to grant Granted Feb 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
82%
Grant Probability
99%
With Interview (+20.0%)
3y 4m
Median Time to Grant
Low
PTA Risk
Based on 727 resolved cases by this examiner. Grant probability derived from career allow rate.

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