Prosecution Insights
Last updated: October 26, 2026
Application No. 18/787,831

FACE-TO-FACE SEMICONDUCTOR DEVICE WITH FAN-OUT PORCH

Non-Final OA §102
Filed
Jul 29, 2024
Priority
Dec 27, 2019 — divisional of 11/456,289 +2 more
Examiner
FERNANDES, ERROL V
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Micron Technology Inc.
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
707 granted / 827 resolved
+17.5% vs TC avg
Moderate +11% lift
Without
With
+10.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
23 currently pending
Career history
847
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
62.4%
+22.4% vs TC avg
§102
33.0%
-7.0% vs TC avg
§112
4.1%
-35.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 827 resolved cases

Office Action

§102
DETAILED ACTION Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-15 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Kobayashi et al. US 2013/0299957 A1. Regarding claims 1-6, Kobayashi discloses: A semiconductor device assembly (Figs. 1 and 2) comprising: a semiconductor device (6a) including an active side (top), a back side (bottom) opposite the active side, and sidewalls extending between the back side and the active side; a redistribution layer (2a including 22) disposed over and in direct contact with the active side of the semiconductor layer and extending past at least one of the sidewalls of the semiconductor device such that the redistribution layer includes a first portion (portion of a 2a to the right of 6a sidewall) vertically aligned with and electrically coupled to the active side of the semiconductor device (thru 20) and a second portion (portion of 2a to the left of 6a sidewall) not vertically aligned with the active side of the semiconductor device; and a wirebond contact (21a) formed on the second portion of the redistribution layer. (claim 2) Figs. 1 and 2; electrically coupled thru 22 and 20. (claim 3) Figs. 1 and 2; a die pad (20). (claim 4) para 0068; multiple number of terminals provided. (claim 5) Figs. 1 and 2; a fan-out porch (1a). (claim 6) para 0053; extension 1a made of resin. Regarding claims 7-11, Kobayashi discloses: A semiconductor device assembly (Figs. 1 and 2) comprising: a semiconductor device (6a) including an active side (top) and a back side (bottom) opposite the active side; a fan-out porch (1a) formed separately from the semiconductor device and positioned in direct contact with a lateral side of the semiconductor device; and a redistribution layer (2a including 22) extending over both the active side of the semiconductor device and the fan-out porch, the redistribution layer including a wirebond contact (21a) disposed over the fan-out porch, the wirebond contact being electrically coupled to the semiconductor device (thru 22 and 20). (claim 8) Figs. 1 and 2; a die pad (20). (claim 9) para 0053; extension 1a made of resin. (claim 10) Fig. 1. (claim 11) para 0068; multiple number of terminals provided. Regarding claims 12-15, Kobayashi discloses: A method of assembling a semiconductor device assembly (Figs. 1 and 2; paras 0053-0056), the method comprising: forming a fan-out porch (1a) in direct contact with a lateral edge of a semiconductor device (6a); forming a redistribution layer (2a including 22) extending over both an active side of the semiconductor device and the fan-out porch; and forming a wirebond contact (21a) on the redistribution layer and vertically aligned with the fan-out porch, the wirebond contact being electrically coupled to the semiconductor device (thru 22 and 20). (claim 13) para 0053; extension 1a made of resin. (claim 14) Fig. 1. (claim 15) para 0068; multiple number of terminals provided. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ERROL V FERNANDES whose telephone number is (571)270-7433. The examiner can normally be reached on 9-5:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Britt Hanley can be reached on 571-270-3042. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ERROL V FERNANDES/Primary Examiner, AU 2893
Read full office action

Prosecution Timeline

Jul 29, 2024
Application Filed
Jul 24, 2026
Non-Final Rejection mailed — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
96%
With Interview (+10.8%)
2y 2m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 827 resolved cases by this examiner. Grant probability derived from career allowance rate.

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