Prosecution Insights
Last updated: July 17, 2026
Application No. 18/799,123

CLEANING COMPOSITION AND CLEANING METHOD OF SEMICONDUCTOR SUBSTRATE

Non-Final OA §102§103
Filed
Aug 09, 2024
Priority
Mar 17, 2022 — JP 2022-042280 +1 more
Examiner
ELHILO, EISA B
Art Unit
Tech Center
Assignee
Fujifilm Corporation
OA Round
1 (Non-Final)
83%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allowance Rate
1205 granted / 1449 resolved
+23.2% vs TC avg
Strong +16% interview lift
Without
With
+16.0%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 9m
Avg Prosecution
30 currently pending
Career history
1468
Total Applications
across all art units

Statute-Specific Performance

§101
1.1%
-38.9% vs TC avg
§103
61.3%
+21.3% vs TC avg
§102
17.8%
-22.2% vs TC avg
§112
12.5%
-27.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1449 resolved cases

Office Action

§102 §103
Claims 1-14 are pending in this application. DETAILED ACTION Notice of Pre-AIA or AIA Status 1 The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 2 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. 3 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 1-4, 8 and 13 are rejected under 35 U.S.C. 102(a)2 as being anticipated by Pang et al. (US 2021/0300860 A1). Pang et al. (US’ 860 A1) teaches a composition for removing wafer from a surface of a semiconductor device (see page 1, paragraph, 0003), wherein the composition comprises alkyl ammonium compound having a formula (4-1) which is identical to the claimed formula (B), when in the reference’s formula (4-1) R6 to R9 each are an alkyl group having 3-10 carbon atom and when in the claimed formula (B), Rb1 to Rb4 each independently represent an alkyl group as claimed in claim 1 and 2 (see page 2, paragraphs, 0024-0025), wherein the composition also comprises corrosion inhibitors (anticorrosion agents) (see page 5, paragraph, 0071), organic solvents include dimethyl sulfoxide (DMSO) (see page 3, paragraph, 0052) and water as claimed in claims 1 and 8 (see page 2, paragraph, 0020), the composition also comprises an amine compound having a formula 3, which is identical to the claimed formula (C), when in the reference’s formula 3, n is a positive integer of 3, and when in the claimed formula (C), nc represents an integer 1, Lc represents an alkylene group and Rc1 to Rc4 represent alkyl groups as claimed in claim 3 (see page 4, paragraphs, 0064-0065), wherein the composition comprises two kinds of the amine compounds having (formulae 4-1 and 3) as claimed in claim 4. Pang et al. (US’ 860 A1) teaches a composition identical to the claimed composition which inherently should have same property of cleaning a semiconductor substrate as claimed in claim 13. Pang et al. (US’ 860 A1) teaches all the limitations of the instant claims. Hence, Pang et al. (US’ 860 A1) anticipates the claims. Claim Rejections - 35 USC § 103 4 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 5-6 , 11, 13 and 14 are rejected under 35 U.S.C. 103 as being unpatentable over Pang et al. (US 2021/0300860 A1) in view of Thomas et al. (CN 112771144 A). English translation of the Patent No. CN 112771144 A is used in this Office action. Pang et al. (US’ 860 A1) teaches a composition for removing wafer from a surface of a semiconductor device (see page 1, paragraph, 0003), wherein the composition comprises alkyl ammonium compound having a formula (4-1) which is similar to the claimed formula (B), when in the reference’s formula (4-1) R6 to R9 each are an alkyl group having 3-10 carbon atom and when in the claimed formula (B), Rb1 to Rb4 each independently represent an alkyl group as claimed (see page 2, paragraphs, 0024-0025), wherein the composition also comprises corrosion inhibitors (anticorrosion agents) (see page 5, paragraph, 0071), organic solvents include dimethyl sulfoxide (DMSO) (see page 3, paragraph, 0052) and water as claimed (see page 2, paragraph, 0020). The instant claims differ from the teaching of Pang et al. (US’ 860 A1) by reciting a cleaning composition for cleaning a substrate which has been subjected to a chemical mechanical polishing treatment and wherein the cleaning composition comprises anticorrosion agents. However, Pang et al. (US’ 860 A1) suggests the use of corrosion inhibitors (anticorrosion agents) in a composition for removing (cleaning) the surface of a semiconductor (see page 5, paragraph, 0071). Thomas et al. (CN’ 144 A) in analogous art of cleaning formulation, teaches a chemical mechanical polishing cleaning composition (see page 17, Abstract) comprising metal corrosion inhibitors include heterocyclic compounds of pyrazole, triazole and tetrazole as claimed in claims 5 and 6 (see page 22, second paragraph), wherein the cleaning composition also comprises organic acids as claimed in claim 11 (see claim 7) and wherein the cleaning composition used for cleaning a semiconductor substrate having a copper and tungsten containing residue materials as claimed in claim 13 (see page 21, paragraph, 6) and wherein the semiconductor substrate has been subjected to a chemical mechanical polishing cleaning step as claimed in claim 14 (see page 17, last paragraph). Therefore, in view of the teaching of Thomas et al. (CN’ 144 A), it would have been obvious to one having ordinary skill in the art before the effective filing date of the claimed invention, to be motivated to modify the cleaning composition of Pang et al. (US’ 860 A1) by incorporating the heterocyclic compounds of pyrazole, triazole and tetrazole as the corrosion inhibitors as taught by Thomas et al. (CN’ 144 A) to arrive at the claimed invention. Such a motivation would be obvious based on the teaching of Pang et al. (US’ 860 A1) that suggest the use of corrosion inhibitors (anticorrosion agents) (see page 5, paragraph, 0071) in a cleaning composition and, thus, the person of the ordinary skill in the art would expect that the use of corrosion inhibitors as taught by Thomas et al. (CN’ 144 A) would be similarly useful and applicable to the analogous cleaning composition taught by Pang et al. (US’ 860 A1) and would expect such a composition to have similar results to those claimed, absent unexpected results. Allowable Subject Matter 5 Claims 7, 9-10 and 12 objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The closest prior art of record (US 2021/0300860 A1) does not teach or disclose the limitations of the instant claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to EISA B ELHILO whose telephone number is (571)272-1315. The examiner can normally be reached Monday-Friday, 7:00 AM to 3:30 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Angela Brown-Pettigrew can be reached at (571)272-2817. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /EISA B ELHILO/Primary Examiner, Art Unit 1761
Read full office action

Prosecution Timeline

Aug 09, 2024
Application Filed
Jul 02, 2026
Non-Final Rejection mailed — §102, §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
83%
Grant Probability
99%
With Interview (+16.0%)
1y 9m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1449 resolved cases by this examiner. Grant probability derived from career allowance rate.

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