DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Specification
The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed.
Double Patenting
The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969).
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Claims 1-14 and 19-20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-11 of U.S. Patent No. 11765483. Although the claims at issue are not identical, they are not patentably distinct from each other because:
The instant applications claims 1-14 and 19-20 are encompassed by the patented claims 1-11. See also claims chart below:
Instant Applications US11765483
A light detecting device, comprising:
a first electrode and a third electrode above a semiconductor layer;
a photoelectric conversion layer above the first electrode and the third electrode;
a second electrode above the photoelectric conversion layer; and an insulation film between the third electrode and the photoelectric conversion layer, wherein a voltage of the third electrode is controllable to a voltage corresponding to
a detection result which contributes to control of discharge of charges or assist for transfer of charges.
2. The light detecting device according to claim 1, wherein the detection result includes at least one of detection results regarding a light amount or a temperature.
3. The light detecting device according to claim 2, wherein the voltage of the third electrode during exposure is feedback-controlled based on an output of a frame image obtained before exposure.
1+2+3+4. The light detecting device according to claim 3,
wherein in a case where a level corresponding to the output of the frame image is higher than a threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and in a case where the level corresponding to the output of the frame image is lower than the threshold value, the voltage of the third electrode is increased to assist the transfer of charges.
1+2+5. The light detecting device according to claim 2,
wherein the voltage of the third electrode, during a signal level output, is feedback-controlled based on a reset level output of a pixel, and the pixel includes the first electrode and the photoelectric conversion layer.
1+2+5+6. The light detecting device according to claim 5,
wherein in a case where a level corresponding to the reset level output is higher than a threshold value, the voltage of the third electrode during the signal level output is decreased to discharge unnecessary charges, and in a case where the level corresponding to the reset level output is lower than the threshold value, the voltage of the third electrode during the signal level output is increased to assist the transfer of charges.
1+2+7. The light detecting device according to claim 2, further comprising
a temperature sensor, wherein the voltage of the third electrode during an imaging operation is feedback-controlled based on a temperature detection result from the temperature sensor.
1+2+7+8. The light detecting device according to claim 7,
wherein in a case where a level corresponding to the temperature detection result is higher than a threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and in a case where the level corresponding to the temperature detection result is lower than the threshold value, the voltage of the third electrode is increased to assist the transfer of charges.
1+2+7+8. The light detecting device according to claim 7,
wherein in a case where a level corresponding to the temperature detection result is higher than a threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and in a case where the level corresponding to the temperature detection result is lower than the threshold value, the voltage of the third electrode is increased to assist the transfer of charges.
1+2+9. The light detecting device according to claim 2,
wherein, a valid pixel includes the first electrode and the photoelectric conversion layer, based on an output of a light-shielding pixel in a vicinity of the valid pixel, the voltage of the third electrode during an imaging operation is feedback-controlled.
1+2+9+10. The light detecting device according to claim 9,
wherein in a case where a level corresponding to the output of the light-shielding pixel is higher than a threshold value, the voltage of the third electrode of the valid pixel is decreased to discharge unnecessary charges, and in a case where the level corresponding to the output of the light-shielding pixel is lower than the threshold value, the voltage of the third electrode of the valid pixel is increased to assist the transfer of charges.
1+2+11. The light detecting device according to claim 2,
wherein the voltage of the third electrode during an imaging operation is feedback-controlled based on a preset gain.
1+2+11+12. The light detecting device according to claim 11,
wherein in a case where a level corresponding to the preset gain is lower than a threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and in a case where the level corresponding to the preset gain is higher than the threshold value, the voltage of the third electrode is increased to assist the transfer of charges.
1+2+13. The light detecting device according to claim 2,
wherein the first electrode is divided into at least an accumulation electrode to accumulate charges and a readout electrode to read out charges.
1+13+14. The light detecting device according to claim 13,
wherein the first electrode is divided into the accumulation electrode to accumulate the charges, a transfer electrode for the transfer of charges, and the readout electrode to read out the charges.
19. The light detecting device according to claim 1, further comprising
a control circuit configured to control the voltage of the third electrode (the control circuit to generate detection result in claim 1 in order to generate a voltage corresponding to the detection result is interpreted as the control circuit to control the voltage of the third electrode).
1+20. The light detecting device according to claim 1,
wherein the voltage of the third electrode is controllable by an external control circuit (a circuit to detect the temperature in claim 5 in order to control the third electrode is interpreted as external control circuit).
A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer;
a photoelectric conversion layer formed on the first electrode;
a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated, wherein a voltage of the third electrode is controlled to a voltage corresponding to
a detection result which controls one of: a discharge of charges from the third electrode, or a transfer of charges to the third electrode,
wherein the detection result corresponds to at least one of detection results regarding a light amount or a temperature, and
wherein the voltage of the third electrode during exposure is feedback- controlled according to an output of a frame image obtained before exposure.
3. (Previously Presented) The solid-state imaging device according to The solid-state imaging device according to
wherein in a case in which a level corresponding to the output of the frame image is higher than a predetermined threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and in a case in which the level corresponding to the output of the frame image is lower than the predetermined threshold value, the voltage of the third electrode is increased to assist the transfer of charges.
4. A solid-state imaging device comprising: a first electrode formed on a semiconductor layer; a photoelectric conversion layer formed on the first electrode; a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated, wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of:
a discharge of charges from the third electrode, or a transfer of charges to the third electrode,
wherein the voltage of the third electrode during a signal level output is controlled according to a reset level output of a pixel including the first electrode and the photoelectric conversion layer.
(Previously Presented) The solid-state imaging device according to the solid-state imaging device according to
wherein in a case in which a level corresponding to the reset level output is higher than a predetermined threshold value, the voltage of the third electrode during the signal level output is decreased to discharge unnecessary charges, and in a case in which the level corresponding to the reset level output is lower than the predetermined threshold value, the voltage of the third electrode during the signal level output is increased to assist the transfer of charges.
(Previously Presented) A solid-state imaging device comprising: a first electrode formed on a semiconductor layer; a photoelectric conversion layer formed on the first electrode; a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated, wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of: a discharge of charges from the third electrode, or a transfer of charges to the third electrode, wherein the detection result corresponds to at least one of detection results regarding a light amount or a temperature, the solid-state imaging device further comprising:
a temperature sensor configured to detect a temperature of the solid- state imaging device, wherein the voltage of the third electrode during imaging is controlled according to the detected temperature.
7. (Previously Presented) The solid-state imaging device according to the solid-state imaging device according to
wherein in a case in which a level corresponding to the temperature detection result is higher than a predetermined threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and in a case in which the level corresponding to the temperature detection result is lower than the predetermined threshold value, the voltage of the third electrode is increased to assist the transfer of charges.
9. (Currently Amended) The solid-state imaging device according to The solid-state imaging device according to
wherein in a case in which a level corresponding to the temperature detection result is higher than a predetermined threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and in a case in which the level corresponding to the temperature detection temperature result is lower than the predetermined threshold value, the voltage of the third electrode is increased to assist the charge transfer.
8. (Previously Presented) A solid-state imaging device comprising: a first electrode formed on a semiconductor layer; a photoelectric conversion layer formed on the first electrode; a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated, wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of: a discharge of charges from the third electrode, or a transfer of charges to the third electrode, wherein, according to an output of a light-shielding pixel disposed in a vicinity of a valid pixel including the first electrode and the photoelectric conversion layer, the voltage of the third electrode disposed for the valid pixel during imaging is feedback-controlled.
7+ 11. (Previously Presented) The solid-state imaging device according to The solid-state imaging device according to claim 7
wherein in a case in which a level corresponding to the output of the light-shielding pixel is higher than a predetermined threshold value, the voltage of the third electrode of the valid pixel is decreased to discharge unnecessary charges, and in a case in which the level corresponding to the output of the light-shielding pixel is lower than the predetermined threshold value, the voltage of the third electrode of the valid pixel is increased to assist the transfer of charges.
10. (Previously Presented) A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer; a photoelectric conversion layer formed on the first electrode; a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated,
wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of: a discharge of charges from the third electrode, or a transfer of charges to the third electrode, wherein the voltage of the third electrode during imaging is controlled according to a preset gain, and wherein in a case in which a level corresponding to the preset gain is lower than a predetermined threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and in a case in which the level corresponding to the preset gain is higher than the predetermined threshold value, the voltage of the third electrode is increased to assist the transfer of charges.
10. (Previously Presented) A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer; a photoelectric conversion layer formed on the first electrode; a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated,
wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of: a discharge of charges from the third electrode, or a transfer of charges to the third electrode, wherein the voltage of the third electrode during imaging is controlled according to a preset gain, and
wherein in a case in which a level corresponding to the preset gain is lower than a predetermined threshold value, the voltage of the third electrode is decreased to discharge unnecessary charges, and in a case in which the level corresponding to the preset gain is higher than the predetermined threshold value, the voltage of the third electrode is increased to assist the transfer of charges.
10. (Previously Presented) A solid-state imaging device comprising: a first electrode formed on a semiconductor layer; a photoelectric conversion layer formed on the first electrode; a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated, wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of: a discharge of charges from the third electrode, or a transfer of charges to the third electrode, wherein the detection result corresponds to at least one of detection results regarding a light amount or a temperature, and,
wherein the first electrode is divided into an accumulation electrode to accumulate charges, a transfer electrode to transfer charges, and a readout electrode to read out charges.
10. (Previously Presented) A solid-state imaging device comprising: a first electrode formed on a semiconductor layer; a photoelectric conversion layer formed on the first electrode; a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated, wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of: a discharge of charges from the third electrode, or a transfer of charges to the third electrode, wherein the detection result corresponds to at least one of detection results regarding a light amount or a temperature, and,
wherein the first electrode is divided into an accumulation electrode to accumulate charges, a transfer electrode to transfer charges, and a readout electrode to read out charges.
A solid-state imaging device comprising:
a first electrode formed on a semiconductor layer;
a photoelectric conversion layer formed on the first electrode;
a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated, wherein a voltage of the third electrode is controlled to a voltage corresponding to
a detection result which controls one of: a discharge of charges from the third electrode, or a transfer of charges to the third electrode,
(Previously Presented) A solid-state imaging device comprising: a first electrode formed on a semiconductor layer; a photoelectric conversion layer formed on the first electrode; a second electrode formed on the photoelectric conversion layer; and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated, wherein a voltage of the third electrode is controlled to a voltage corresponding to a detection result which controls one of: a discharge of charges from the third electrode, or a transfer of charges to the third electrode, wherein the detection result corresponds to at least one of detection results regarding a light amount or a temperature, the solid-state imaging device further comprising: a temperature sensor configured to detect a temperature of the solid- state imaging device,
wherein the voltage of the third electrode during imaging is controlled according to the detected temperature.
Claims 15-18 are rejected on the ground of nonstatutory double patenting as being unpatentable over claim 1 of U.S. Patent No. 11765483 in view of Takase (US2016/0119562).
Regarding claim 15, the patented claim 1 fails to explicitly disclose: “a pixel array section that includes a plurality of pixels in a two-dimensional arrangement, wherein each pixel of the plurality of pixels includes the first electrode (50) and the photoelectric conversion layer (51), and the third electrode surrounds (61) the first electrode (50) of the pixel in a case where the third electrode is viewed from a light incidence side (Fig. 3: See third electric 61 surrounds first electrode 50).
In an analogous of art, Takase teaches a two dimension pixel cell arrangement (Fig. 1: pixel cells 14; [0057]), wherein each pixel of the plurality of pixels includes the first electrode (Fig. 2-3: 50) and the photoelectric conversion layer (51), and the third electrode surrounds (61) the first electrode (50) of the pixel in a case where the third electrode is viewed from a light incidence side (Fig. 3: See third electric 61 surrounds first electrode 50). According to Takase, a voltage application circuit may apply different voltages in at least two frames, the image processing circuit may synthesize the image signals in the at least two frames and may output a synthetic image signal. With this configuration, it is possible to obtain an image having a high contrast ratio ([0249-0250]). In light of the teaching from Takase, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to include the voltage control circuitry and the two dimension pixel cell arrangement of Takase. The modifications thus provide a means for obtaining an image having a high contrast ratio (Takase [0249-0250]).
Regarding claim 16, Patented claim 1 in view of Takase discloses the light detecting device according to claim 15, wherein at least one of a plurality of third electrode is for one pixel of the plurality of pixels (Takase: Fig. 3: see plurality of electrode 61 surrounds 50 within one of pixel cells 14), and the plurality of third electrodes includes the third electrode (Takase: Fig. 3: see plurality of other electrodes 61 within other pixel cells 14).
Regarding claim 17, Patented claim 1 in view of Takase discloses the light detecting device according to claim 15, wherein the third electrode is for all pixels of the plurality of pixels (Takase: Fig. 3: see plurality of other electrodes 61 surrounds all other pixel cells 14).
Regarding claim 18, Patented claim 1 in view of Takase discloses the light detecting device according to claim 15, wherein the voltage of the third electrode is controllable by a one-pixel unit, a plural-pixel unit, or an all-pixel unit ([0058-0059]: According to Takase by adjusting a voltage applied to the auxiliary electrode 61, the sensitivity of the imaging device 101 is adjusted. Therefore, the voltage of third electrode is controllable by all pixel unit in order for the sensitivity of the imaging device to be adjusted).
Conclusion
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/HUNG H LAM/Primary Examiner, Art Unit 2639 12/26/25